Patent application number | Description | Published |
20080268290 | CHEMICALLY DISORDERED MATERIAL USED TO FORM A FREE LAYER OR A PINNED LAYER OF A MAGNETORESISTANCE (MR) READ ELEMENT - Magnetoresistive (MR) read elements and associated methods of fabrication are disclosed. A free layer and/or a pinned layer of an MR read element are formed from a magnetic material such as Co | 10-30-2008 |
20090027813 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH CoFeGe FERROMAGNETIC LAYERS - A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has a ferromagnetic alloy comprising Co, Fe and Ge in the sensor's free layer and/or pinned layer. The sensor may be a simple pinned structure, in which case the pinned layer may be formed of the CoFeGe ferromagnetic alloy. Alternatively, the sensor may have an AP-pinned layer structure, in which case the AP2 layer may be formed of the CoFeGe ferromagnetic alloy. The Ge-containing alloy comprises Co, Fe and Ge, wherein Ge is present in the alloy in an amount between about 20 and 40 atomic percent, and wherein the ratio of Co to Fe in the alloy is between about 0.8 and 1.2. More particularly, the CoFeGe alloy may consist essentially of only Co, Fe and Ge according to the formula (Co | 01-29-2009 |
20090091864 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH ANTIPARALLEL-PINNED LAYER CONTAINING SILICON - A current-perpendicular-to-the-plane (CPP) spin-valve (SV) magnetoresistive sensor uses an antiparallel (AP) pinned structure and has a ferromagnetic alloy comprising Co, Fe and Si in the reference layer of the AP-pinned structure and optionally in the CPP-SV sensor's free layer. The reference layer or AP2 layer is a multilayer of a first AP2-1 sublayer that contains no Si and is in contact with the AP-pinned structure's antiparallel coupling (APC) layer, and a second AP2-2 sublayer that contains Si and is in contact with the CPP-SV sensor's spacer layer. The Si-containing alloy may consist essentially of only Co, Fe and Si according to the formula (Co | 04-09-2009 |
20090154025 | SCISSORING-TYPE CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH FREE LAYERS HAVING ETCH-INDUCED UNIAXIAL MAGNETIC ANISOTROPY - A “scissoring-type” current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with dual ferromagnetic sensing or free layers separated by a nonmagnetic spacer layer has improved stability as a result of etch-induced uniaxial magnetic anisotropy in each of the free layers. Each of the two ferromagnetic free layers has an etch-induced uniaxial magnetic anisotropy and an in-plane magnetic moment substantially parallel to its uniaxial anisotropy in the quiescent state, i.e., the absence of an applied magnetic field. The etch-induced uniaxial anisotropy of each of the free layers is achieved either by direct ion etching of each of the free layers, and/or by ion etching of the layer on which each of the free layers is deposited. A strong magnetic anisotropy is induced in the free layers by the etching, which favors generally orthogonal orientation of the two free layers in the quiescent state. | 06-18-2009 |
20090168269 | CURRENT PERPENDICULAR TO PLANE SPIN VALVE WITH HIGH-POLARIZATION MATERIAL IN AP1 LAYER FOR REDUCED SPIN TORQUE - A current perpendicular to plane magnetoresistive sensor having improved resistance amplitude change and reduced spin torque noise. The sensor has an antiparallel coupled pinned layer structure with at least one of the layers of the pinned layer structure includes a high spin polarization material such as Co | 07-02-2009 |
20090257154 | SCISSORING-TYPE CURRENT-PERPENDICULAR-TO-THE-PLANE GIANT MAGNETORESISTANCE (CPP-GMR) SENSORS WITH DAMPED FREE LAYER STRUCTURES - A “scissoring-type” current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor has magnetically damped free layers. In one embodiment each of the two free layers is in contact with a damping layer that comprises Pt or Pd, or a lanthanoid (an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Th, Yb, and Lu). Each of the two free layers has one of its surfaces in contact with the sensor's electrically conducting nonmagnetic spacer layer and its other surface in contact with its associated damping layer. A nonmagnetic film may be located between each free layer and its associated damping layer. In another embodiment the damping element is present as a dopant or impurity in each of the two free layers. In another embodiment a nanolayer of the damping element is located within each of the two free layers. | 10-15-2009 |
20090268353 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH ANTIPARALLEL-FREE LAYER STRUCTURE AND LOW CURRENT-INDUCED NOISE - A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL | 10-29-2009 |
20090297700 | METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE GIANT MAGNETORESISTANCE (CPP-GMR) SENSOR WITH A CONFINED-CURRENT-PATH (CCP) - A method of making a current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor with a confined-current-path (CCP) layer uses an array of self-assembled ferritin protein molecules with inorganic cores to make the CCP layer in the sensor stack. In one embodiment, the ferritin molecules with cores of insulating oxide particles are deposited on an electrically conductive support layer and the ferritin molecules are dissolved, leaving an array of insulating oxide particles. An electrically conducting layer is deposited over the oxide particles and into the regions between the oxide particles to form the CCP layer. In another embodiment, the ferritin molecules with inorganic particles in their cores are deposited on an electrically insulating support layer and the ferritin molecules are dissolved, leaving an array of inorganic particles that function as an etch mask. The insulating support layer is then etched through the mask to form vias down to the underlying layer on which the support layer is formed. An electrically conducting layer is then deposited to form the CCP layer. | 12-03-2009 |
20090323228 | TUNNELING MAGNETORESISTIVE (TMR) DEVICE WITH IMPROVED FERROMAGNETIC UNDERLAYER FOR MgO TUNNELING BARRIER LAYER - A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording hard disk drive, has a magnesium oxide (MgO) tunneling barrier layer and a ferromagnetic underlayer beneath and in direct contact with the MgO tunneling barrier layer. The ferromagnetic underlayer comprises a crystalline material according to the formula (Co | 12-31-2009 |
20100033881 | MAGNETIC FIELD SENSING SYSTEM USING SPIN-TORQUE DIODE EFFECT - A magnetic field sensing system with a current-perpendicular-to-the-plane (CPP) sensor, like that used for giant magnetoresistive (GMR) and tunneling magnetoresistive (TMR) spin-valve (SV) sensors, operates in a mode different from conventional GMR-SV and TMR-SV systems. An alternating-current (AC) source operates at a fixed selected frequency and directs AC perpendicularly through the layers of the CPP sensor, with the AC amplitude being high enough to deliberately induce a spin-torque in the CPP sensor's free layer. The AC-induced spin-torque at the selected frequency causes oscillations in the magnetization of the free layer that give rise to a DC voltage signal V | 02-11-2010 |
20100102896 | MICROWAVE CIRCULATOR WITH THIN-FILM EXCHANGE-COUPLED MAGNETIC STRUCTURE - A microwave circulator uses a thin-film exchange-coupled structure to provide an in-plane magnetic field around the circulator. The exchange-coupled structure is a ferromagnetic layer having an in-plane magnetization oriented generally around the circulator and an antiferromagnetic layer exchange-coupled with the ferromagnetic layer that provides an exchange-bias field to the ferromagnetic layer. A plurality of electrically conductive ports are connected to the exchange-coupled structure. Each of the portions or legs of the circulator between the ports may have an electrical coil wrapped around it with each coil connected to an electrical current source. The ferromagnetic resonance (FMR) frequency of the exchange-coupled structure in the absence of an external magnetic field is determined by the properties of the material of ferromagnetic layer and the magnitude of the exchange-bias field due to the exchange-coupling of the ferromagnetic layer to the antiferromagnetic layer. If one or more of the optional coils is used, then the FMR frequency can be tuned by changing the current in the coil or coils to change the magnitude of the externally applied magnetic field. | 04-29-2010 |
20110026168 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH CoFeGe FERROMAGNETIC LAYERS AND Ag OR AgCu SPACER LAYER - A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has a ferromagnetic alloy comprising Co, Fe and Ge in the sensor's free layer and/or pinned layer and a spacer layer of Ag, Cu or a AgCu alloy between the free and pinned layers. The sensor may be a simple pinned structure, in which case the pinned layer may be formed of the CoFeGe ferromagnetic alloy. Alternatively, the sensor may have an AP-pinned layer structure, in which case the AP2 layer may be formed of the CoFeGe ferromagnetic alloy. The Ge-containing alloy comprises Co, Fe and Ge, wherein Ge is present in the alloy in an amount between about 20 and 40 atomic percent, and wherein the ratio of Co to Fe in the alloy is between about 0.8 and 1.2. More particularly, the CoFeGe alloy may consist essentially of only Co, Fe and Ge according to the formula (Co | 02-03-2011 |
20110043950 | TUNNELING MAGNETORESISTIVE (TMR) READ HEAD WITH LOW MAGNETIC NOISE - A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording disk drive, has low magnetic damping, and thus low mag-noise, as a result of the addition of a ferromagnetic backing layer to the ferromagnetic free layer. The backing layer is a material with a low Gilbert damping constant or parameter α, the well-known dimensionless coefficient in the Landau-Lifshitz-Gilbert equation. The backing layer may have a thickness such that it contributes up to two-thirds of the total moment/area of the combined free layer and backing layer. The backing layer may be formed of a material having a composition selected from (Co | 02-24-2011 |
20110069413 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE READ HEAD WITH MULTIPLE SENSING ELEMENTS FOR PATTERNED-MEDIA - A magnetoresistive (MR) sensor or read head for a magnetic recording disk drive has multiple independent current-perpendicular-to-the-plane (CPP) MR sensing elements. The sensing elements are spaced-apart in the cross-track direction and separated by an insulating separation region so as to be capable of reading data from multiple data tracks on the disk. The sensing elements have independent CPP sense currents, each of which is directed to independent data detection electronics, respectively. Each sensing element comprises a stack of layers formed on a common electrically conducting base layer, which may be a bottom magnetic shield layer formed of electrically conducting magnetically permeable material. Each sensing element has a top electrical lead layer. A top magnetic shield layer is located above the sensing elements in contact with the top lead layers. The top shield layer is formed of soft magnetically permeable material, but is electrically insulating, so that the independent sense currents can be passed to the independent sensing elements. | 03-24-2011 |
20110089940 | MAGNETORESISTIVE SENSOR EMPLOYING NITROGENATED Cu/Ag UNDER-LAYERS WITH (100) TEXTURED GROWTH AS TEMPLATES FOR CoFe, CoFeX, AND Co2(MnFe)X ALLOYS - A magnetoresistive sensor that has a free layer with a face centered cubic, 100 crystal orientation formed on an underlayer structure that has been deposited in the presence of nitrogen. The free layer can be constructed of CoFe, Co | 04-21-2011 |
20110149428 | SLIDER FLY-HEIGHT CONTROL IN A HARD DISK DRIVE - In fly-height control system, a slider comprises a spin torque oscillator that is configured for generating an RF carrier signal which is out-of-band of a frequency band of read data, write data, and control signals in a hard disk drive. | 06-23-2011 |
20110249365 | PERPENDICULAR MAGNETIC RECORDING WRITE HEAD WITH IMPROVED LAMINATED MAIN POLE - A perpendicular magnetic recording write head has an improved antiferromagnetically-coupled laminated main pole (MP) formed on a substrate. The MP has two ferromagnetic multilayers, each comprising at least one FeCo/NiFe/FeCo ferromagnetic trilayer, antiferromagnetically coupled across an antiferromagnetically coupling (AFC) film consisting essentially of ruthenium (Ru). The MP has a NiFe layer directly above the AFC film, on the side of the AFC film opposite the side facing the substrate, and in contact with the Ru AFC film and the lower FeCo layer of the upper multilayer. There is no NiFe layer directly below the Ru AFC film so the side of the AFC film facing the substrate is in direct contact with the upper FeCo layer of the lower multilayer. | 10-13-2011 |
20120063034 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH IMPROVED INSULATING STRUCTURE - A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor, like a CPP MR disk drive read head, has an improved insulating structure surrounding the stack of layers making up the sensor. The sensor has a first silicon nitride layer with a thickness between about 1 and 5 nm on the side edges of the sensor and on regions of the bottom shield layer adjacent the sensor below the sensor's ferromagnetic biasing layer. The sensor has a second silicon nitride layer with a thickness between about 2 and 5 nm on the back edge of the sensor and on the region of the bottom shield layer adjacent the sensor back edge, and a substantially thicker metal oxide layer on the second silicon nitride layer. The insulating structure prevents edge damage at the perimeter of the sensor and thus allows for the fabrication of CPP MR read heads with substantially smaller dimensions. | 03-15-2012 |
20120156522 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH IMPROVED SEED LAYER STRUCTURE FOR HARD BIAS LAYER - A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has an improved seed layer structure for the ferromagnetic hard (high coercivity) bias layer that is used to longitudinally bias the sensor's free ferromagnetic layer. The seed layer structure is a trilayer consisting of a first seed layer of tantalum (Ta), a second seed layer of one or both titanium (Ti) and Ti-oxide on and in contact with the Ta layer, and a third seed layer of tungsten (W) on and in contact with the second seed layer. | 06-21-2012 |
20120161263 | Current perpendicular to plane (CPP) magnetoresistive sensor having dual composition hard bias layer - A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has a dual composition hard bias layer structure that is used to longitudinally bias the sensor's free ferromagnetic layer. The dual composition hard bias layer structure is composed of first layer of CoPt, having high anisotropy compared to the second layer. The second layer, composed of CoFe, has a higher magnetization compared to the first layer. The resulting dual hard bias layer structure exhibits high values of coercivity and squareness while maintaining a reduced sensor thickness compared to sensors of the prior art. | 06-28-2012 |
20120164486 | NICR AS A SEED STACK FOR FILM GROWTH OF A GAP LAYER SEPARATING A MAGNETIC MAIN POLE OR SHIELD - A method and apparatus for a high-moment magnetic material used in a write head deposited on a gap layer that was grown using a nickel-chromium seed layer. The nickel-chromium seed layer provides the correct crystallographic orientation for both the nonmagnetic gap layer and the high-moment magnetic material such that the high-moment magnetic material has soft-magnetic properties and is useful as either a main pole or as shield layer in a write head. Moreover, the nickel-chronium seed layer, which may be exposed on the air bearing surface (ABS) of the write head, has an etch rate similar to other metals found in the ABS, thereby avoiding pole tip protrusion during later processing. | 06-28-2012 |
20120164757 | Method for Junction Isolation to Reduce Junction Damage for a TMR Sensor - The present invention provides a method for manufacturing a TMR sensor that reduces damage to a sensor stack during intermediate stages of the manufacturing process. In an embodiment of the invention, after formation of a sensor stack, a protective layer is deposited on the sensor stack that provides protection from materials that may be used in subsequent steps of the manufacturing process. The protective layer is subsequently converted to an insulating layer and the thickness of the insulating layer is extended to an appropriate thickness. In converting the protective layer to an insulating layer, the sensor stack is not directly exposed to materials that may damage it. For example, in an embodiment of the invention, Mg is used as the protective layer that is subsequently converted to MgO with the introduction of oxygen. Although direct contact of oxygen with the sensor stack may cause damage to the sensor stack, direct contact is avoided by the present invention. Subsequently, the thickness of the insulating layer, in this example can be extended to an appropriate thickness without exposing the sensor stack to damage causing oxygen and inter-diffusion. | 06-28-2012 |
20140153138 | SCISSOR MAGNETIC READ HEAD WITH WRAP-AROUND MAGNETIC SHIELD - A magnetic scissor type magnetic read head having magnetic side shielding for reduced effective track width and having side biasing for improved stability. The read head includes first and magnetic side shields that each include first and second magnetic layers and an anti-parallel exchange coupling layer sandwiched there-between. The magnetic layers of the side shields are anti-parallel coupled with one another such that one of the magnetic layers has its magnetization oriented in a first direction parallel with the air bearing surface and the second magnetic layer has its magnetization oriented in a second direction that is opposite to the first direction and also parallel with the air bearing surface. These magnetizations of the first and second magnetic layers provide a bias field that stabilizes the magnetization of the free magnetic layers of the sensor stack to prevent flipping of the magnetizations of these layers. | 06-05-2014 |