Patent application number | Description | Published |
20080247261 | SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD THEREOF - A semiconductor memory device includes: a command latch circuit that latches a command signal; an address latch circuit that latches an address signal; a mode latch circuit that latches a mode signal; and a command decoder that selects the address latch circuit in response to the latch of a normal command by the command latch circuit, and selects the mode latch circuit in response to the latch of an adjustment command. With this arrangement, the mode signal can be dynamically received without performing a mode register set. Therefore, when a sufficiently large latch margin of the mode latch circuit is secured, there is no risk that it becomes impossible to input the mode signal. | 10-09-2008 |
20080265956 | Semiconductor device having input circuits activated by clocks having different phases - Input circuits connected to an external input terminal PAD via resistor elements are activated in response to the level transition of the clock signals supplied thereto for accepting input signals. In order to input signals applied to the external input terminal PAD clock signals having different phases are supplied to the respective input circuits. The cycle time of each one input circuit can be made longer by sequentially assigning the serial data supplied to the external input terminals in response to the clock signals having different clock signals. Since the input circuits are isolated from each other by means of the resistor elements, the influence of the kick back signal which occurs at first stage of each the input circuit upon the other input circuit can be made very small. | 10-30-2008 |
20080291770 | PLL CIRCUIT FOR INCREASING POTENTIAL DIFFERENCE BETWEEN GROUND VOLTAGE AND REFERENCE VOLTAGE OR POWER SOURCE VOLTAGE OF OSCILLATION CIRCUIT - A PLL circuit includes a phase comparator for outputting a frequency control signal based on a result of comparison between phases of an input reference clock signal and a fed-back oscillation signal; an oscillation circuit, connected to the phase comparator, for outputting an oscillation signal having a frequency in accordance with the frequency control signal, a power source voltage, and a predetermined reference voltage; and a bias control circuit, connected to the oscillation circuit, for increasing either the potential difference between the reference voltage of the oscillation circuit and a ground voltage or the potential difference between the power source voltage of the oscillation circuit and the ground voltage. A transistor in the oscillation circuit can operate in a saturation area, thereby operating the PLL circuit at a high speed with a low power source voltage, without being easily affected by a variation in the temperature or other process conditions. | 11-27-2008 |
20090129137 | Semiconductor storage device - A semiconductor storage device includes a memory array compartmentalized into first and second regions alternately arranged. The second regions are formed by odd and even columns alternately arranged. The semiconductor storage device includes: a memory mat array arranged in each first region; a sense amp array arranged in each second region; local IO lines arranged in each second region and connected to the sense amp array; main IO lines crossing the first and second regions; and a read/write amplifier arranged in each second region and at an intersection region where the local IO lines cross the main IO lines. The read/write amplifier in an odd column is connected to a local IO line therein and to a local IO line in the next odd column. The read/write amplifier in an even column is connected to a local 10 line therein and to a local IO line in the next even column. | 05-21-2009 |
20090140783 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device having a delay adjusting circuit including a delay line having N stages of differential delay circuits and N stages of differential interpolators. A differential interpolator of an Mth (where M06-04-2009 | |
20090190411 | Semiconductor memory device and control method - A semiconductor memory device, in which a plurality of data output lines are commonly used by a plurality of banks, includes a plurality of gate circuits each of which are provided at each intermediate position of the plurality of the data output lines, and is controlled to be turned on during a normal operation mode and to be turned off at least when reading data during a parallel test mode, and a comparator circuit that inputs in parallel and compares a signal of each separated part of the each data output line separated by the plurality of the gate circuit being turned off. | 07-30-2009 |
20090196107 | SEMICONDUCTOR DEVICE AND ITS MEMORY SYSTEM - A semiconductor device selects one mask pattern among from a plurality of the mask patterns, which are stored in a mask resister circuit for mask controlling of a bit width (vertical axis), by a mask pattern selection signal, and controls input and output of data based on the selected mask pattern and a mask control signal of a bit string (horizontal axis), when inputting and outputting data having the consecutive bit string (horizontal axis) and a plurality of the bit widths (vertical axis). A read data converter circuit and a write data converter circuit select to mask or unmask each data signal during burst reading or writing, and masks the data signal. The masked data signal is not written in a memory cell by inactivating a write data buffer circuit during writing, and is not read out by inactivating a data driver circuit connecting with an external input and output terminal. | 08-06-2009 |
20090206879 | Signal transmission circuit and signal transmission system using the same - A signal transmission circuit includes first and second power source wirings, and a plurality of differential circuits connected in series between the first and second power source wirings. A signal transmission system includes a plurality of pairs of signal wirings, an output circuit supplying a differential signal to each of the pairs of signal wirings, and an input circuit receiving the differential signals via the pairs of signal wirings, wherein the output circuit includes first and second power source wirings, and a plurality of differential output circuits connected in series between the first and second power source wirings, and the input circuit includes a plurality of differential input circuits respectively corresponding to the differential output circuits. | 08-20-2009 |
20100123499 | INFORMATION SYSTEM, SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREFOR - An information system with an enhanced effect in reducing jitter with a short period. An input clock signal CLKi is output via a voltage-controlled delay circuit | 05-20-2010 |
20100302874 | SEMICONDUCTOR MEMORY DEVICE, INFORMATION PROCESSING SYSTEM INCLUDING THE SAME, AND CONTROLLER - To include first and second data input/output terminals allocated to first and second memory circuit units, respectively, and an address terminal allocated in common to these memory circuit units. When a first chip selection signal is activated, the first memory circuit unit performs a read operation or a write operation via the first data input/output terminal based on an address signal regardless of an operation of the second memory circuit unit. When a second chip selection signal is activated, the second memory circuit unit performs a read operation or a write operation via the second data input/output terminal based on the address signal regardless of an operation of the first memory circuit unit. With this configuration, a wasteful data transfer can be prevented, and the effective data transfer rate can be increased. | 12-02-2010 |
20110063017 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first circuit, a second circuit, and a first voltage dividing circuit. The first circuit is coupled to a first terminal. The first circuit is operable by a first voltage supplied from the first terminal. The second circuit is coupled through a first resistive element to the first terminal. The second circuit is operable by a second voltage supplied through the first resistive element from the first terminal. The second voltage is smaller in absolute value than the first voltage. The first voltage dividing circuit is coupled to a first node between the first resistive element and the second circuit. The first voltage dividing circuit has a conductive state and a non-conductive state. The first voltage dividing circuit is kept in the conductive state while applying the first voltage to the first terminal to allow the first circuit to operate by the first voltage. | 03-17-2011 |
20110148464 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first input buffer adjusting a logic threshold voltage, a first replica circuit, a first reference voltage generating circuit, and a first comparator circuit. The first replica circuit is identical in circuit configuration to the first input buffer. The first replica circuit has an input and an output connected to the input. The first replica circuit generates the logic threshold voltage as an output voltage. The first reference voltage generating circuit generates a first reference voltage. The first comparator circuit compares the logic threshold voltage as an output voltage of the first replica circuit to the first reference voltage to generate a first threshold adjustment signal. The first comparator circuit supplies the first threshold adjustment signal to the first input buffer and the first replica circuit. The first threshold adjustment signal allows the first input buffer to adjust the logic threshold voltage. | 06-23-2011 |
20110216612 | Device - A device includes a control circuit that triggers a first operation every time a specific signal is supplied thereto, and that triggers a second operation in place of the first operation in response to the first specific signal supplied after the number of the first operation performed has reached a predetermined number. | 09-08-2011 |
20110317495 | MEMORY SYSTEM AND CONTROL METHOD THEREFOR - A memory system includes a plurality of memory devices having data terminals that are commonly connected to a memory controller. Each of the memory devices includes a data output circuit that outputs read data that is read from a memory cell array in response to a read command to the data terminal, and an output-timing adjustment circuit that adjusts an output timing of read data that is output from the data output circuit. The memory controller sets an adjustment amount of adjustment performed by an output-timing adjustment circuit such that delay times from when the read command is issued until when the read data is received match in the memory devices, by issuing a setting command to each of the memory devices. | 12-29-2011 |
20110317503 | Semiconductor device - A semiconductor device is provided with: a delay circuit including a first delay unit that has a plurality of differential first delay elements which are respectively connected in series, a plurality pairs of first contacts which are respectively provided between the plurality of first delay elements, and a first output circuit that outputs a first delayed signal corresponding to a pair of first contacts selected from among the plurality pairs of first contacts, on receiving a first selection signal; a second delay unit that receives the first delayed signal, and that includes a plurality of single-ended second delay elements which are respectively connected in series, a plurality of second contacts which are respectively provided between the plurality of second delay elements, and a second output circuit that outputs a second delayed signal corresponding to a second contact selected from among the plurality of second contacts, on receiving a second selection signal; and a control circuit that outputs each of the first and second selection signals. | 12-29-2011 |
20120187401 | DEVICE ALLOWING SUPPRESSION OF STRESS ON CHIP - A device includes: a first substrate including a plurality of first electrodes; a plurality of chips each including a plurality of through electrodes, the chips being stacked with each other such that the through electrodes of a lower one of the chips are connected respectively the through electrodes of an upper one of the chips to provide a chip stacked body; and a second substrate cooperating the first substrate to sandwich the chip stacked body between the first and second substrates, the second substrate including a plurality of second electrodes on a first surface that is opposite to a second surface facing the chip stacked body, each of the second electrodes being electrically connected to an associated one of the through electrodes of an uppermost one of the chips of the chip stacked body. | 07-26-2012 |
20120263003 | DEVICE PERFORMING REFRESH OPERATIONS OF MEMORY AREAS - Disclosed herein is a device that includes a plurality of memory circuits and a refresh control circuit configured to generate a plurality of refresh initiation signals such that one of the refresh initiation signals takes an active level. Each of the memory circuits comprises a memory cell array including a plurality of memory cells, at least one data terminal, a data read/write circuit performing a data read operation to read out read-data from a selected one of the memory cells and supply the read-data to the data terminal and a data write operation to receive write-data from the data terminal and write the write-data into a selected one of the memory cells, and a refresh circuit performing a data refresh operation on selected one or ones of the memory cells of the memory cell array in response to an associated one of the refresh initiation signals taking the active level. | 10-18-2012 |
20120292759 | SEMICONDUCTOR DEVICE HAVING CHIP CRACK DETECTION STRUCTURE - A device includes a semiconductor substrate, a first penetration electrode and a plurality of second penetration electrodes each penetrating the semiconductor substrate, a first terminal and a plurality of second terminals formed on a one side of the substrate, and a third terminal and a plurality of fourth terminals formed on an opposite side of the substrate. Each of the first and third terminals is vertically aligned with and electrically connected to first penetration electrode. Each of the second terminals is vertically aligned with an associated one of the second penetration electrodes and electrically connected to another one of the second penetration terminals that is not vertically aligned with the associated second terminal. Each of fourth terminals is vertically aligned with and electrically connected to an associated one of the second penetration electrodes. | 11-22-2012 |
20120314511 | SEMICONDUCTOR DEVICE - A device includes a semiconductor substrate, a first penetrating electrode penetrating through the semiconductor substrate, a first test pad, and a first tri-state buffer coupled between the first penetrating electrode and the first test pad. The first tri-state buffer receives a buffer control signal at a control terminal thereof. The device further includes a buffer control circuit supplying the buffer control signal to the first tri-state buffer. | 12-13-2012 |
20120320686 | SEMICONDUCTOR MEMORY DEVICE, INFORMATION PROCESSING SYSTEM INCLUDING THE SAME, AND CONTROLLER - A system including a controller and a memory chip. The controller includes first and second selection signal terminals supplying first and second selection signals, respectively, multiple first data terminals and multiple second data terminals. The memory chip includes a semiconductor substrate, third and fourth selection signal terminals provided on the semiconductor substrate and electrically coupled to the first and second selection signal terminals of the controller, respectively. Multiple third data terminals are provided on the semiconductor substrate and electrically coupled to the first data terminals of the controller, respectively. Multiple fourth data terminals are provided on the semiconductor substrate and electrically coupled to the second data terminals of the controller, respectively. The first and third data terminals communicate first data in response to the first selection signal. The second and fourth data terminals communicate second data in response to the second selection signal. | 12-20-2012 |
20120320690 | SEMICONDUCTOR MEMORY DEVICE, INFORMATION PROCESSING SYSTEM INCLUDING THE SAME, AND CONTROLLER - A semiconductor device that includes a semiconductor substrate. First and second mode registers are provided on the semiconductor substrate and store information, respectively. First and second circuits are provided on the semiconductor substrate. The first and second circuits have substantially the same configuration. The first and second circuits perform an operation in response to the information of the first and second mode registers, respectively. | 12-20-2012 |
20130076387 | SEMICONDUCTOR CHIP, SEMICONDUCTOR DEVICE, AND METHOD OF MEASURING THE SAME - In a semiconductor device in which semiconductor chips having a number of signal TSVs are stacked, a huge amount of man-hours have been required to perform a continuity test for each of the signal TSVs. According to the present invention, no continuity test is performed directly on signal TSVs. Dummy bumps are arranged in addition to signal TSVs. The dummy bumps of the semiconductor chips are connected through a conduction path that can pass the dummy bumps between the semiconductor chips with one stroke when the semiconductor chips are stacked. A continuity test of the conduction path allows a bonding defect on bonded surfaces of two of the stacked semiconductor chips to be measured and detected. | 03-28-2013 |
20130114364 | SEMICONDUCTOR DEVICE PERFORMING REFRESH OPERATION - Disclosed herein is a device that includes a first semiconductor chip. The first semiconductor chip includes a first data storage area storing data, a first refresh circuit repeating a first refresh operation on the first data storage area to make the first data storage area retain the data, a first terminal supplied with a first control signal from outside of the first semiconductor chip, and a first control circuit coupled between the first terminal and the first refresh circuit to control a repetition cycle of the first refresh operation in response to the first control signal. | 05-09-2013 |
20130134421 | SEMICONDUCTOR CHIP HAVING PLURAL PENETRATING ELECTRODES THAT PENETRATE THERETHROUGH - Disclosed herein is a semiconductor chip that includes: a semiconductor chip body including a semiconductor substrate and a circuit element layer provided on a main surface of the semiconductor substrate, the circuit element layer including a plurality of circuit elements; first to fourth penetrating electrodes penetrating the semiconductor chip body; a first conductive path electrically connected between the first penetrating electrode and the second penetrating electrode without being in contact with any one of the circuit elements; a second conductive path electrically connected between the first penetrating electrode and the third penetrating electrode without being in contact with any one of the circuit elements; and a third conductive path electrically connected between the second penetrating electrode and the fourth penetrating electrode without being in contact with any one of the circuit elements. | 05-30-2013 |
20130147038 | SEMICONDUCTOR DEVICE INCLUDING STACKED SEMICONDUCTOR CHIPS WITHOUT OCCURRING OF CRACK - A device includes first and second semiconductor chips. The first semiconductor chip includes an edge defining a periphery of the first semiconductor chip. The second semiconductor chip is greater in size than the first semiconductor chip. The second semiconductor chip is stacked over the first semiconductor chip so that the second semiconductor chip hangs over from the edge of the first semiconductor chip. The second semiconductor chip includes a plurality of wiring patterns including a first wiring pattern that positions over the edge of the first semiconductor chip, an insulating film which covers the wiring patterns and which includes on or more holes that expose one or more the wiring patterns, and one or more bump electrodes formed on the one or more the wiring patterns. Remaining one or ones of the wiring patterns is kept covered by the insulating layer and includes the first wiring pattern. | 06-13-2013 |
20130153898 | SEMICONDUCTOR DEVICE HAVING PLURAL SEMICONDUCTOR CHIP STACKED WITH ONE ANOTHER - Disclosed herein is a device that includes: external terminals; a first chip including a first control circuit that generates a first control signal; and a second chip stacked with the first chip. The second chip includes: a first test terminal supplied with a first test signal and being free from connecting to any one of the external terminals; a second test terminal supplied with the first test signal and coupled to one of the external terminals without connecting to any one of control circuits of the first chip; a first normal terminal supplied with the first control signal and coupled to another of the external terminals with an intervention of the first control circuit of the first chip; and a first selection circuit including first input node coupled in common to the first and second test terminals and the second input node coupled to the first normal terminal. | 06-20-2013 |
20130153899 | SEMICONDUCTOR DEVICE HAVING PLURAL SEMICONDUCTOR CHIPS - Disclosed herein is a device that including a first chip having first to fourth terminals and a second chip having fifth to seventh terminals. The first chip further includes a penetration electrode connected between the first and fourth electrodes and a first internal node coupled to of which an electrical potential being changed in response to an electrical potential of the first terminal. The second chip further includes a second internal node coupled to of which an electrical potential being changed in response to an electrical potential of the fifth terminal. The first internal node is electrically coupled to both the second terminal and the sixth terminal. The second internal node is electrically coupled to both the third terminal and the seventh terminal. | 06-20-2013 |
20130161827 | SEMICONDUCTOR CHIP HAVING PLURAL PENETRATION ELECTRODE PENETRATING THERETHROUGH - Disclosed herein is a semiconductor chip that includes: a plurality of penetration electrodes each penetrating between main and back surfaces of the semiconductor chip, the penetration electrodes including a plurality of first penetration electrodes, a second penetration electrode and a third penetration electrode; and a wiring configured to intersect with a plurality of regions, each of the regions being defined as a region between corresponding two of the first penetration electrodes, one end of the wiring being coupled to the second penetration electrode, the other end of the wiring being coupled to the third penetration electrode. | 06-27-2013 |
20130162275 | SEMICONDUCTOR DEVICE HAVING COMMAND MONITOR CIRCUIT - A semiconductor device includes a plurality of channels, a plurality of command monitor circuits provided corresponding to the plurality of channels, respectively, and a plurality of signal lines coupled in common to the plurality of command monitor circuits. Each of the plurality of command monitor circuits includes a selector configured to receive a plurality of input signals and selectively output a plurality of selected signals among the input signals, based on a first selection information, and an output circuit coupled between the selector and the plurality of signal lines, and configured to output the selected signals to the plurality of signal lines, respectively, based on a second selection information. One of the plurality of command monitor circuits is selected to output the selected signals to the plurality of signal lines while the remaining of the command monitor circuits is non selected, based on the second selection information. | 06-27-2013 |
20130162282 | SEMICONDUCTOR DEVICE HAVING POTENTIAL MONITORING TERMINAL TO MONITOR POTENTIAL OF POWER-SUPPLY LINE - Disclosed herein is a device that includes an internal circuit, a first terminal supplied with a first voltage, a first power-supply line coupled between the first terminal and the internal circuit, a potential monitoring terminal, and a first switch coupled between the internal power-supply line and the potential monitoring terminal. | 06-27-2013 |
20130227229 | SEMICONDUCTOR DEVICE THAT BURST-OUTPUTS READ DATA - A semiconductor device includes a command terminal, a plurality of memory banks, a control circuit and an output circuit. The control circuit is configured to respond to each of issuance of a read command, that is supplied to the command terminal, to perform a read operation on any one of the memory banks so that the any one of the memory banks output a plurality of read data sets. The output circuit receives the read data sets and outputs the read data sets to outside in response to a clock signal so that a first interval substantially the same as a period of the clock signal or longer than the period of the clock signal is interposed between the read data sets. | 08-29-2013 |
20130279270 | MEMORY SYSTEM AND CONTROL METHOD THEREFOR - A memory system includes a plurality of memory devices having data terminals that are commonly connected to a memory controller. Each of the memory devices includes a data output circuit that outputs read data that is read from a memory cell array in response to a read command to the data terminal, and an output-timing adjustment circuit that adjusts an output timing of read data that is output from the data output circuit. The memory controller sets an adjustment amount of adjustment performed by an output-timing adjustment circuit such that delay times from when the read command is issued until when the read data is received match in the memory devices, by issuing a setting command to each of the memory devices. | 10-24-2013 |
20130283001 | SEMICONDUCTOR DEVICE THAT BURST-OUTPUTS READ DATA - Disclosed herein is a device that includes: a data terminal; a plurality of memory banks; and a control circuit configured to control a data transfer between the data terminal and the memory banks. The control circuit is configured to set a read latency in response to a burst length. | 10-24-2013 |
20130286750 | MEMORY SYSTEM AND CONTROL METHOD THEREFOR - A memory system includes a plurality of memory devices having data terminals that are commonly connected to a memory controller. Each of the memory devices includes a data output circuit that outputs read data that is read from a memory cell array in response to a read command to the data terminal, and an output-timing adjustment circuit that adjusts an output timing of read data that is output from the data output circuit. The memory controller sets an adjustment amount of adjustment performed by an output-timing adjustment circuit such that delay times from when the read command is issued until when the read data is received match in the memory devices, by issuing a setting command to each of the memory devices. | 10-31-2013 |
20140002144 | SEMICONDUCTOR DEVICE WITH BUFFER AND REPLICA CIRCUITS | 01-02-2014 |
20140126300 | Semiconductor Memory Device, Information Processing System Including the Same, and Controller - To include first and second data input/output terminals allocated to first and second memory circuit units, respectively, and an address terminal allocated in common to these memory circuit units. When a first chip selection signal is activated, the first memory circuit unit performs a read operation or a write operation via the first data input/output terminal based on an address signal regardless of an operation of the second memory circuit unit. When a second chip selection signal is activated, the second memory circuit unit performs a read operation or a write operation via the second data input/output terminal based on the address signal regardless of an operation of the first memory circuit unit. With this configuration, a wasteful data transfer can be prevented, and the effective data transfer rate can be increased. | 05-08-2014 |
20140151702 | SEMICONDUCTOR DEVICE HAVING CHIP CRACK DETECTION STRUCTURE - A semiconductor device includes a plurality of signal terminals on each of a plurality of vertically stacked semiconductor chips, each plurality of signal terminals connected to vertically aligned signal terminals of an adjacent semiconductor chip by through silicon vias, a common test terminal on each of the plurality of vertically stacked semiconductor chips connected to a vertically aligned common test terminal of an adjacent semiconductor chip by a through silicon via; a plurality of spiral test terminals on the plurality of vertically stacked semiconductor chips, each spiral test terminal connected to a non-vertically aligned spiral test terminal of an adjacent semiconductor chip by a through silicon via, and a conductive line arranged along a periphery of at least one of the plurality of vertically stacked semiconductor chips, the conductive line connected to a respective common test terminal and a respective spiral test terminal. | 06-05-2014 |
20140184284 | SEMICONDUCTOR DEVICE - A method for synchronizing an output clock signal with an input clock signal in a delay locked loop. A first count values decreasing the number of bypassed elements in a differential delay line until an edge of the output clock signal is delayed relative to an edge of the input clock signal or the first count value reaches a first count final value if the first count value reaches the first count final value, a second count value is adjusting to decrease the number of bypassed elements in a single-ended delay line until the edge of the output clock signal is delayed relative to the edge of the input clock signal. A third count value is adjusted to decrease the delay of an interpolator until the edge of the output clock signal is no longer delayed with respect to the edge of the input clock signal. | 07-03-2014 |
20140269108 | SEMICONDUCTOR DEVICE - A device includes a semiconductor substrate, a first penetrating electrode penetrating through the semiconductor substrate, a first test pad, and a first tri-state buffer coupled between the first penetrating electrode and the first test pad. The first tri-state buffer receives a buffer control signal at a control terminal thereof. The device further includes a buffer control circuit supplying the buffer control signal to the first tri-state buffer. | 09-18-2014 |
20140286107 | Memory System and Control Method Therefor - A memory system includes a plurality of memory devices having data terminals that are commonly connected to a memory controller. Each of the memory devices includes a data output circuit that outputs read data that is read from a memory cell array in response to a read command to the data terminal, and an output-timing adjustment circuit that adjusts an output timing of read data that is output from the data output circuit. The memory controller sets an adjustment amount of adjustment performed by an output-timing adjustment circuit such that delay times from when the read command is issued until when the read data is received match in the memory devices, by issuing a setting command to each of the memory devices. | 09-25-2014 |
20150037914 | METHOD FOR MANUFACTURING TESTED APPARATUS AND METHOD FOR MANUFACTURING SYSTEM INCLUDING TESTED APPARATUS - Disclosed herein is a method for manufacturing a tested apparatus that includes forming a stacked structure that includes a plurality of first semiconductor chips stacked over a semiconductor wafer. The semiconductor wafer comprises a plurality of second semiconductor chips that are arranged in matrix of a plurality of rows and columns. Each of the first semiconductor chips is stacked over and electrically connected to a different one of the second semiconductor chips. The method further includes contacting a probe card to at least one of the first semiconductor chips to perform a first test operation on a corresponding one of the second semiconductor chips with an intervention of the at least one of the first semiconductor chips so that a plurality of tested apparatus each comprising a pair of first and second semiconductor chips stacked with each other is derived. | 02-05-2015 |
20150063050 | SEMICONDUCTOR DEVICE PERFORMING REFRESH OPERATION - Disclosed herein is a device that includes a first semiconductor chip. The first semiconductor chip includes a first data storage area storing data, a first refresh circuit repeating a first refresh operation on the first data storage area to make the first data storage area retain the data, a first terminal supplied with a first control signal from outside of the first semiconductor chip, and a first control circuit coupled between the first terminal and the first refresh circuit to control a repetition cycle of the first refresh operation in response to the first control signal. | 03-05-2015 |