Patent application number | Description | Published |
20080266490 | LIGHTING APPARATUS AND LIQUID CRYSTAL DISPLAY APPARATUS - A lighting apparatus with a plurality of light emitting panels (for example, organic EL panels) arranged in a plane to form a light emitting panel layer (organic EL panel arrangement) and a plurality of such light emitting panel layers (light emitting panel layers) are laminated to form a light emitting panel lamination section. Organic EL panels of the single-sided light emitting type and organic EL panels of the double-sided light emitting type can be individually juxtaposed in a plane to form the organic EL panel arrangements which are laminated in a displaced relationship from each other. | 10-30-2008 |
20100259601 | Liquid crystal shutter and image display observation system - A liquid crystal shutter includes a plurality of liquid crystal layers arranged in a light-incident direction; and a plurality of polarizers attached to each of the plurality of liquid crystal layers, polarization axes of 2 adjacent polarizers that have a liquid crystal layer therebetween being crossed at an angle of 90°, the accumulated value of degrees of polarization of polarizers that have polarization axes in a first direction being identical to that of degrees of polarizations of polarizers that have polarization axes in a second direction that crosses the first direction at an angle of 90°. | 10-14-2010 |
20110140116 | THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC DEVICE - The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the pair of source/drain electrodes and forming a channel; a first insulating film as a gate insulating film provided on the gate electrode side of the oxide semiconductor layer; and a second insulating film provided on the pair of source/drain electrodes side of the oxide semiconductor layer. The first insulating film and/or the second insulating film contain/contains fluorine. | 06-16-2011 |
20110186853 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT - A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method. | 08-04-2011 |
20110248270 | THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC UNIT - A thin film transistor using oxide semiconductor for a channel, which may be controlled such that threshold voltage is positive and may be improved in reliability is provided. The thin film transistor includes a gate electrode, a pair of source/drain electrodes, an oxide semiconductor layer forming a channel and provided between the gate electrode and the pair of source/drain electrodes, a first insulating film as a gate insulating film provided on the oxide semiconductor layer on a side near the gate electrode, and a second insulating film provided on the oxide semiconductor layer on a side near the pair of source/drain electrodes. One or both of the first insulating film and the second insulating film includes an aluminum oxide having a film density of 2.70 g/cm | 10-13-2011 |
20110309876 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer. | 12-22-2011 |
20130270566 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer. | 10-17-2013 |
20140124781 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT - A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method. | 05-08-2014 |
Patent application number | Description | Published |
20110086267 | POLYMER, SEMICONDUCTOR FILM, ELECTRODE, ELECTRODE ACTIVE MATERIAL, ELECTROCHEMICAL ELEMENT AND ELECTRICITY STORAGE DEVICE - A polymer having a structure represented by the following general formula (1), wherein in general formula (1), Ph is a phenyl group; X is an oxygen atom, a sulfur atom, a selenium atom or a tellurium atom; and R1 and R1 each independently contains at least one selected from the group consisting of a chained saturated hydrocarbon group, a chained unsaturated hydrocarbon group, a cyclic saturated hydrocarbon group, a cyclic unsaturated hydrocarbon group, a phenyl group, a hydrogen atom, a hydroxyl group, a cyano group, an amino group, a nitro group and a nitroso group. The chained saturated hydrocarbon group, the chained unsaturated hydrocarbon group, the cyclic saturated hydrocarbon group and the cyclic unsaturated hydrocarbon group each contain at least one selected from the group consisting of a carbon atom, an oxygen atom, a nitrogen atom, a sulfur atom and a silicon atom. | 04-14-2011 |
20120328944 | ELECTRODE AND ELECTRICITY STORAGE DEVICE - An electrode of the present invention includes: an electrically conductive support ( | 12-27-2012 |
Patent application number | Description | Published |
20080245148 | INERTIAL SENSOR AND ELECTRICAL OR ELECTRONIC DEVICE - An inertial sensor includes an oscillator that is supported by an elastic supporting member such that the oscillator is floating relative to a base and the oscillator is displaceable along a single axis, and a displacement detection unit detecting a displacement of the oscillator. The oscillation of the oscillator is a simple harmonic motion along a Z axis. An X axis, a Y axis, and the Z axis, serving as reference axes of an oscillation coordinate system for the oscillator, are shifted to provide x, y, and z axes, serving as new reference axes. Position coordinates of the oscillator of the x, y, and z axes are determined in at least two points during one period of the oscillator. A difference vector (Δx, Δy, Δz) is calculated on the basis of the determined position coordinates. An angular velocity or an acceleration is obtained using the difference vector. | 10-09-2008 |
20100223996 | INERTIAL SENSOR - An inertial sensor includes a drive structure | 09-09-2010 |
20130028280 | SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME - Disclosed herein is a semiconductor laser element including: on a substrate, a laser structure section configured to include a semiconductor laminated structure having an n-type semiconductor layer, active layer and p-type semiconductor layer in this order, and a p-side electrode on top of the p-type semiconductor layer; a pair of resonator edges provided on two opposed lateral sides of the semiconductor laminated structure; and films made of a non-metallic material having a thermal conductivity higher than that of surrounding gas, and provided in the region of the top side of the laser structure section including the positions of the resonator edges. | 01-31-2013 |
20130318961 | POLYMERIC ACTUATOR, ACTUATOR DEVICE, METHOD OF MANUFACTURING POLYMERIC ACTUATOR, AND METHOD OF MANUFACTURING ACTUATOR DEVICE - There is provided a polymeric actuator including: a pair of facing portions located so as to face each other; and a folded portion through which one end portions of the pair of facing portions are coupled to each other, wherein the pair of facing portions and the folded portion are composed of an inner electrode layer, an electrolyte layer, and an outer electrode layer which are laminated in order from an inside. Therefore, the displacements are generated in the pair of facing portions, respectively, to be added to each other, and the displacement is generated in the folded portion as well due to the bending. As a result, the large displacement is generated as a whole. Thus, it is possible to increase the displacement amount after the simplification of the structure is realized. | 12-05-2013 |