Patent application number | Description | Published |
20080265371 | Capacitor Unit and Method of Forming the Same - A capacitor unit includes a first capacitor and a second capacitor. The first capacitor includes a first lower electrode, a first dielectric layer pattern and a first upper electrode sequentially stacked. The first capacitor includes a first control layer pattern for controlling a voltage coefficient of capacitance (VCC) of the first capacitor between the first lower electrode and the first dielectric layer pattern. The second capacitor includes a second lower electrode, a second dielectric layer pattern and a second upper electrode sequentially stacked. The second lower electrode is electrically connected to the first upper electrode, and the second upper electrode is electrically connected to the second lower electrode. The second capacitor includes a second control layer pattern for controlling a VCC of the second capacitor between the second lower electrode and the second dielectric layer pattern. | 10-30-2008 |
20090233434 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - In semiconductor devices and methods of manufacturing semiconductor devices, a zirconium source having zirconium, carbon and nitrogen is provided onto a substrate to form an adsorption layer of the zirconium source on the substrate. A first purging process is performed to remove a non-adsorbed portion of the zirconium source. An oxidizing gas is provided onto the adsorption layer to form an oxidized adsorption layer of the zirconium source on the substrate. A second purging process is performed to remove a non-reacted portion of the oxidizing gas. A nitriding gas is provided on the oxidized adsorption layer to form a zirconium carbo-oxynitride layer on the substrate, and a third purging process is provided to remove a non-reacted portion of the nitriding gas. | 09-17-2009 |
20090246949 | Methods of manufacturing semiconductor devices - In a semiconductor device and a method of manufacturing a semiconductor device, a lower electrode is formed on a semiconductor substrate. A first zirconium oxide layer is formed on the lower electrode by performing a first deposition process using a first zirconium source and a first oxidizing gas. A zirconium carbo-oxynitride layer is formed on the first zirconium oxide layer by performing a second deposition process using a second zirconium source, a second oxidizing gas and a nitriding gas, and an upper electrode is formed on the zirconium carbo-oxynitride layer. A zirconium oxide-based composite layer having a high dielectric constant and a thin equivalent oxide thickness can be obtained. | 10-01-2009 |
20100170441 | Method of Forming Metal Oxide and Apparatus for Performing the Same - In a method and an apparatus for forming metal oxide on a substrate, a source gas including metal precursor flows along a surface of the substrate to form a metal precursor layer on the substrate. An oxidizing gas including ozone flows along a surface of the metal precursor layer to oxidize the metal precursor layer so that the metal oxide is formed on the substrate. A radio frequency power is applied to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas. Acceleration of the oxidation reaction may improve electrical characteristics and uniformity of the metal oxide. | 07-08-2010 |
20100207243 | Semiconductor device and method of fabricating the same - A semiconductor device including a substrate; a bottom electrode on the substrate; a first dielectric layer on the bottom electrode, the first dielectric layer including a first metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb; a second dielectric layer on the first dielectric layer, the second dielectric layer including a second metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb, wherein the first metal oxide and the second metal oxide are different materials; a third dielectric layer on the second dielectric layer, the third dielectric layer including a metal carbon oxynitride; and an upper electrode on the third dielectric layer. | 08-19-2010 |
20100207247 | Semiconductor Integrated Circuit Device and Method of Fabricating the Same - A semiconductor integrated circuit device includes a lower electrode formed on a substrate, a first dielectric layer formed of a metal nitride layer, a metal oxynitride layer, or a combination thereof, on the lower electrode, a second dielectric layer formed on the first dielectric layer that includes a zirconium oxide layer, and an upper electrode formed on the second dielectric layer. | 08-19-2010 |
20110097869 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING MIM CAPACITOR AND METHOD OF FABRICATING THE SAME - In a semiconductor integrated circuit device and a method of formation thereof, a semiconductor device comprises: a semiconductor substrate; an insulator at a top portion of the substrate, defining an insulator region; a conductive layer pattern on the substrate, the conductive layer pattern being patterned from a common conductive layer, the conductive layer pattern including a first pattern portion on the insulator in the insulator region and a second pattern portion on the substrate in an active region of the substrate, wherein the second pattern portion comprises a gate of a transistor in the active region; and a capacitor on the insulator in the insulator region, the capacitor including: a lower electrode on the first pattern portion of the conductive layer pattern, a dielectric layer pattern on the lower electrode, and an upper electrode on the dielectric layer pattern. | 04-28-2011 |
20130280881 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - A semiconductor device including a substrate; a bottom electrode on the substrate; a first dielectric layer on the bottom electrode, the first dielectric layer including a first metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb; a second dielectric layer on the first dielectric layer, the second dielectric layer including a second metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb, wherein the first metal oxide and the second metal oxide are different materials; a third dielectric layer on the second dielectric layer, the third dielectric layer including a metal carbon oxynitride; and an upper electrode on the third dielectric layer. | 10-24-2013 |
20140273392 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor integrated circuit device includes a lower electrode formed on a substrate, a first dielectric layer formed of a metal nitride layer, a metal oxynitride layer, or a combination thereof, on the lower electrode, a second dielectric layer formed on the first dielectric layer that includes a zirconium oxide layer, and an upper electrode formed on the second dielectric layer. | 09-18-2014 |
Patent application number | Description | Published |
20090001437 | Integrated Circuit Devices Including Recessed Conductive Layers and Related Methods - An integrated circuit device may include a first insulating layer on a substrate with an opening through the first insulating layer. A conductive layer may be on the first insulating layer with the first insulating layer between the conductive layer and the substrate and with the conductive layer set back from the opening. A second insulating layer may be on the conductive layer with the conductive layer between the first and second insulating layers. The second insulating layer may be set back from the opening, and a sidewall of the conductive layer adjacent the opening may be recessed relative to a sidewall of the second insulating layer adjacent the opening. An insulating spacer on portions of the first insulating layer may surround the opening, and the insulating spacer may be on the sidewall of the second insulating layer adjacent the opening so that the insulating spacer is between the sidewall of the second conductive layer and the opening. A conductive contact may be in the opening through the first insulating layer and on portions of the insulating spacer so that the insulating spacer is between the conductive contact and the conductive layer. Related methods are also discussed. | 01-01-2009 |
20120062980 | COLOR ELECTRONIC PAPER DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a color electronic paper display device and a method for manufacturing the same. The color electronic paper display device according to the present invention includes: a barrier rib structure including a plurality of cavities partitioned so that rotating balls are separately inserted thereinto; an electrode structure including an upper electrode and a lower electrode each formed over and under the barrier rib structure and applying voltage to the rotating balls; and a black coating layer formed on the surfaces of the barrier ribs of the barrier rib structure. | 03-15-2012 |
20120115389 | METHOD FOR MANUFACTURING ELECTRONIC PAPER DISPLAY DEVICE - Disclosed herein is a method for manufacturing an electronic paper display device, including: laminating a dry film on a first electrode; performing exposing and developing processes on the dry film to form barriers defining cells; injecting electronic balls into the cells; and binding a second electrode onto the first electrode including the electronic balls. | 05-10-2012 |
20120146961 | Electronic paper - Disclosed herein is an electronic paper, more particularly to an electronic paper capable of actually realizing full colors. The electronic paper includes upper and lower electrodes made of a transparent material and disposed to face each other; transparent barrier ribs disposed between the upper and lower electrodes to form a plurality of cells; twist balls each having a sphere-shaped structure and received in each of the cells, the twist ball having first and second display regions on a surface thereof and the first and second display regions being colored with different colors and respectively electrified with positive charges and negative charges; and a black matrix layer provided below the transparent barrier ribs, the black matrix layer having a larger width than the transparent barrier rib. | 06-14-2012 |
20120170107 | ELECTRONIC PAPER DISPLAY AND METHOD FOR MANUFATURING THE SAME - Disclosed herein are an electronic paper display and a method for manufacturing the same. In the electronic paper display according to the present invention, red, green, blue, and black (RGBK) rotatable balls are included in a plurality of pixel spaces isolated by barrier ribs, two or more rotatable balls having the same color are connected to one thin film transistor (TFT), and the thin film transistors (TFTs) for respectively realizing red, green, blue, and black (RGBK) colors constitute one unit pixel. According to the present invention, when the rotatable balls exhibiting each of the RGBK colors are connected in two or more and simultaneously driven within one unit pixel, the pixel electrodes are made to be large and connected to one TFT. As a result, the number of TFTs can be decreased even though a large-area display is manufactured, and the volume of module can be minimized. | 07-05-2012 |
20130162382 | CHIP INDUCTOR AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a chip inductor including: a metal-polymer composite in which metal particles and polymer are mixed; a wiring pattern provided inside the metal-polymer composite to form a coil; an external electrode provided in a portion of an outer peripheral surface of the metal-polymer composite; and an insulating portion provided between the metal-polymer composite and the wiring pattern and between the metal-polymer composite and the external electrode, and a method for manufacturing the same. | 06-27-2013 |
20130263440 | METHOD FOR MANUFACTURING INDUCTOR - Disclosed herein is a method for manufacturing an inductor, including: forming a coil laminate by inserting spiral coils into a guide shaft disposed at a center of a magnetic substrate; providing a molding part so as to surround the coil laminate; removing the guide shaft; and providing a ferrite composite so as to surround the molding part. | 10-10-2013 |