Patent application number | Description | Published |
20080265319 | METHOD OF PROVIDING ENHANCED BREAKDOWN BY DILUTED DOPING PROFILES IN HIGH-VOLTAGE TRANSISTORS - A method of fabricating high-voltage semiconductor devices, the semiconductor devices and a mask for implanting dopants in a semiconductor are described. | 10-30-2008 |
20090065704 | IMPLEMENTATION OF AVALANCHE PHOTO DIODES IN (BI) CMOS PROCESSES - A radiation detector ( | 03-12-2009 |
20090072319 | SEMICONDUCTOR DEVICE WITH RELATIVELY HIGH BREAKDOWN VOLTAGE AND MANUFACTURING METHOD - A semiconductor device includes at least one active component ( | 03-19-2009 |
20100038676 | Semiconductor Devices with a Field Shaping Region - A semiconductor device includes a semiconductor region having a pn junction and a field shaping region located adjacent the pn junction to increase the reverse breakdown voltage of the device. The field shaping region is coupled via capacitive voltage coupling regions to substantially the same voltages as are applied to the pn junction. When a reverse voltage is applied across the pn junction and the device is non-conducting, a capacitive electric field is present in a part of the field shaping region which extends beyond a limit of the pn junction depletion region which would exist in the absence of the field shaping region. The electric field in the field shaping region inducing a stretched electric field limited to a correspondingly stretched pn junction depletion region in the semiconductor region. | 02-18-2010 |
20100176426 | TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a transistor ( | 07-15-2010 |
20100181618 | EXTENDED DRAIN TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - An extended drain transistor ( | 07-22-2010 |
20100200897 | TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a transistor ( | 08-12-2010 |
20100213517 | HIGH VOLTAGE SEMICONDUCTOR DEVICE - This invention describes implementation of medium/high voltage semiconductor devices with a better voltage-blocking capability versus specific on-resistanĪe trade off. This approach can be implemented in baseline and submicron CMOS without any additional process steps. Said devices comprise dielectric regions and semiconductor regions formed between them. Conductive extentions are formed on the dielectric regions, said extentions interacting capacitively with the semiconducter regions. | 08-26-2010 |
20110006369 | FINFET TRANSISTOR WITH HIGH-VOLTAGE CAPABILITY AND CMOS-COMPATIBLE METHOD FOR FABRICATING THE SAME - The present invention relates to a method for fabricating a FinFET on a substrate. The method comprises providing a substrate with an active semiconductor layer on an insulator layer, and concurrently fabricating trench isolation regions in the active semiconductor layer for electrically isolating different active regions in the active semiconductor layer from each other, and trench gate-isolation regions in the active semiconductor layer for electrically isolating at least one gate region of the FinFET in the active semiconductor layer from a fin-shaped channel region of the FinFET in the active semiconductor layer. | 01-13-2011 |
20110198691 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE - A semiconductor device eg. a MOSFET ( | 08-18-2011 |
20120038002 | IC AND IC MANUFACTURING METHOD - Disclosed is a method of manufacturing a vertical bipolar transistor in a CMOS process, comprising implanting an impurity of a first type into a the substrate ( | 02-16-2012 |
20120154019 | FIELD-EFFECT MAGNETIC SENSOR - A field-effect magnetic sensor facilitates highly-sensitive magnetic field detection. In accordance with one or more example embodiments, current flow respectively between first and second source/drain terminals and a third source/drain terminal is controlled using inversion layers in separate channel regions for each of the first and second terminals. In response to a magnetic field, a greater amount of current is passed between the third source/drain terminal and one of the first and second source/drain terminals, relative to an amount of current passed between the third source/drain terminal and the other one of the first and second source/drain terminals. | 06-21-2012 |
20120248533 | FIELD PLATE AND CIRCUIT THEREWITH - A circuit having a field plate is provided. In accordance with one or more embodiments, an electronic device includes a substrate having an active region, and a contiguous field plate separated from the active region by a dielectric material on the substrate. The field plate has first and second end regions (e.g., opposing one another along a length of the field plate), with the second end region being patterned. The patterned end region has at least one opening therein as defined by edges of the field plate (e.g., along an outer perimeter and/or as an internal opening), and couples a field to the active region in response to a voltage applied to the field plate. This field is greater in strength near the first end region, relative to the patterned end region. | 10-04-2012 |
20120299112 | Integration of Low and High Voltage CMOS Devices - A semiconductor device includes a semiconductor substrate having a first portion and a second portion and a first transistor of a first type formed in the first portion of the substrate, the first transistor being operable at a first voltage, and the first transistor including a doped channel region of a second type opposite of the first type. The semiconductor device also includes a second transistor of the second type formed in the second portion of the substrate, the second transistor being operable at a second voltage greater than the first voltage, the second transistor including an extended doped feature of the second type. Further, the semiconductor device includes a well of the first type in the semiconductor substrate under a gate of the second transistor, wherein the well does not extend directly under the extended doped feature and the extended doped feature does not extend directly under the well. | 11-29-2012 |
20130153968 | Semiconductor Device - A semiconductor device and a method of making the same. The device includes a semiconductor substrate having an AlGaN layer on a GaN layer. The device also includes first contact and a second contact. The average thickness of the AlGaN layer varies between the first contact and the second contact, for modulating the density of an electron gas in the GaN layer between the first contact and the second contact. | 06-20-2013 |
20140160607 | ESD PROTECTION - An ESD protection circuit comprises a series connection of at least two protection components between a signal line to be protected and a return line (e.g. ground), comprising a first protection component connected to the signal line and a second protection component connected to the ground line. They are connected with opposite polarity so that when one conducts in forward direction the other conducts in reverse breakdown mode. A bias voltage source connects to the junction between the two protection components through a bias impedance. The use of the bias voltage enables the signal distortions resulting from the ESD protection circuit to be reduced. | 06-12-2014 |
20140175528 | SEMICONDUCTOR MAGNETIC FIELD SENSORS - A semiconductor magnetic field sensor comprising a semiconductor well on top of a substrate layer is disclosed. The semiconductor well includes a first current collecting region and a second current collecting region and a current emitting region placed between the first current collecting region and the second current collecting region. The semiconductor well also includes a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region and a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region. In operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current. The deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field. | 06-26-2014 |
20140312356 | Semiconductor Device - A semiconductor device and a method of making the same. The device includes a semiconductor substrate. The device also includes a bipolar transistor on the semiconductor substrate. The bipolar transistor includes an emitter. The bipolar transistor also includes a base located above the emitter. The bipolar transistor further includes a laterally extending collector located above the base. The collector includes a portion that extends past an edge of the base. | 10-23-2014 |
20140347131 | SEMICONDUCTOR DEVICE AND CIRCUIT WITH DYNAMIC CONTROL OF ELECTRIC FIELD - A circuit, comprising a semiconductor device with one or more field gate terminals for controlling the electric field in a drift region of the semiconductor device; and a feedback circuit configured to dynamically control a bias voltage or voltages applied to the field gate terminal or terminals, with different control voltages used for different semiconductor device characteristics in real-time in response to a time-varying signal at a further node in the circuit. | 11-27-2014 |
20140347135 | BIPOLAR TRANSISTORS WITH CONTROL OF ELECTRIC FIELD - The invention provides a bipolar transistor circuit and a method of controlling a bipolar transistor, in which the bipolar transistor has a gate terminal for controlling the electric field in a collector region of the transistor. The bias voltage applied to the gate terminal is controlled to achieve different transistor characteristics. | 11-27-2014 |