Patent application number | Description | Published |
20080265313 | SEMICONDUCTOR DEVICE HAVING ENHANCED PERFORMANCE AND METHOD - In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a localized region of doping near a portion of a channel region where current exits during operation. | 10-30-2008 |
20090014814 | POWER SEMICONDUCTOR DEVICE HAVING IMPROVED PERFORMANCE AND METHOD - In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a counter-doped drain region spaced apart from a channel region. | 01-15-2009 |
20090096021 | SEMICONDUCTOR DEVICE HAVING DEEP TRENCH CHARGE COMPENSATION REGIONS AND METHOD - In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the device. The charge compensating trench includes a trench filled with various layers of semiconductor material including opposite conductivity type layers. | 04-16-2009 |
20100059814 | SEMICONDUCTOR DEVICE HAVING VERTICAL CHARGE-COMPENSATED STRUCTURE AND SUB-SURFACE CONNECTING LAYER AND METHOD - In one embodiment, a semiconductor device is formed having vertical localized charge-compensated trenches, trench control regions, and sub-surface doped layers. The vertical localized charge-compensated trenches include at least a pair of opposite conductivity type semiconductor layers. The trench control regions are configured to provide a generally vertical channel region electrically coupling source regions to the sub-surface doped layers. The sub-surface doped layers are further configured to electrically connect the drain-end of the channel to the vertical localized charge compensation trenches. Body regions are configured to isolate the sub-surface doped layers from the surface of the device. | 03-11-2010 |
20100059815 | SEMICONDUCTOR TRENCH STRUCTURE HAVING A SEALING PLUG AND METHOD - In one embodiment, a semiconductor device is formed having a trench structure. The trench structure includes a single crystalline semiconductor plug formed along exposed upper surfaces of the trench. In one embodiment, the single crystalline semiconductor plug seals the trench to form a sealed core. | 03-11-2010 |
20100148227 | ELECTRONIC DEVICE INCLUDING AN INSULATING LAYER HAVING DIFFERENT THICKNESSES AND A CONDUCTIVE ELECTRODE AND A PROCESS OF FORMING THE SAME - An electronic device includes a transistor, wherein the electronic device can include a semiconductor layer having a primary surface, a channel region, a gate electrode, a source region, a conductive electrode, and an insulating layer lying between the primary surface of the semiconductor layer and the conductive electrode. The insulating layer has a first region and a second region, wherein the first region is thinner than the second region. The channel region, gate electrode, source region, or any combination thereof can lie closer to the first region than the second region. The thinner portion can allow for faster switch of the transistor, and the thicker portion can allow a relatively large voltage difference to be placed across the insulating layer. Alternative shapes for the transitions between the different regions of the insulating layer and exemplary methods to achieve such shapes are also described. | 06-17-2010 |
20100148245 | ELECTRONIC DEVICE INCLUDING A TRENCH AND A CONDUCTIVE STRUCTURE THEREIN - An electronic device can include a transistor. In an embodiment, the transistor can include a semiconductor layer having a primary surface and a conductive structure. The conductive structure can include a horizontally-oriented doped re-ion lying adjacent to the primary surface, an underlying doped region spaced apart from the primary surface and the horizontally-oriented doped region, and a vertically-oriented conductive region extending through a majority of the thickness of the semiconductor layer and electrically connecting the doped horizontal region and the underlying doped region. In another embodiment, the transistor can include a gate dielectric layer, wherein the field-effect transistor is designed to have a maximum gate voltage of approximately 20 V, a maximum drain voltage of approximately 30 V, and a figure of merit no greater than approximately 30 mΩ*nC. | 06-17-2010 |
20100151646 | PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING A TRENCH AND A CONDUCTIVE STRUCTURE THEREIN - A process of forming an electronic device can include providing a workpiece comprising a substrate, including an underlying doped region, and a semiconductor layer overlying the underlying doped region, wherein the semiconductor layer has a primary surface spaced apart from the underlying doped region. The process can also include forming a vertically-oriented conductive region extending from the primary surface to the underlying doped region, and forming a horizontally-oriented doped region adjacent to the primary surface. In a finished form of the electronic device, the horizontally-oriented doped region extends further in a lateral direction toward a region where a source region has been or will be formed, as compared to the vertically-oriented conductive region. The electronic device includes a transistor that includes the underlying doped region, the vertically-oriented conductive region, and the horizontally-oriented doped region. | 06-17-2010 |
20100327347 | ELECTRONIC DEVICE INCLUDING A WELL REGION - An electronic device including an integrated circuit can include a buried conductive region and a semiconductor layer overlying the buried conductive region, and a vertical conductive structure extending through the semiconductor layer and electrically connected to the buried conductive region. The integrated circuit can further include a doped structure having an opposite conductivity type as compared to the buried conductive region, lying closer to an opposing surface than to a primary surface of the semiconductor layer, and being electrically connected to the buried conductive region. The integrated circuit can also include a well region that includes a portion of the semiconductor layer, wherein the portion overlies the doped structure and has a lower dopant concentration as compared to the doped structure. In other embodiment, the doped structure can be spaced apart from the buried conductive region. | 12-30-2010 |
20100327350 | ELECTRONIC DEVICE INCLUDING AN INTEGRATED CIRCUIT WITH TRANSISTORS COUPLED TO EACH OTHER - An electronic device, including an integrated circuit, can include a buried conductive region and a semiconductor layer overlying the buried conductive region, wherein the semiconductor layer has a primary surface and an opposing surface lying closer to the buried conductive region. The electronic device can also include a first doped region and a second doped region spaced apart from each other, wherein each is within the semiconductor layer and lies closer to primary surface than to the opposing surface. The electronic device can include current-carrying electrodes of transistors. A current-carrying electrode of a particular transistor includes the first doped region and is a source or an emitter and is electrically connected to the buried conductive region. Another current-carrying electrode of a different transistor includes the second doped region and is a drain or a collector and is electrically connected to the buried conductive region. | 12-30-2010 |
20110068344 | ELECTRONIC DEVICE INCLUDING A TRENCH AND A CONDUCTIVE STRUCTURE THEREIN - An electronic device can include a transistor. In an embodiment, the transistor can include a semiconductor layer having a primary surface and a conductive structure. The conductive structure can include a horizontally-oriented doped region lying adjacent to the primary surface, an underlying doped region spaced apart from the primary surface and the horizontally-oriented doped region, and a vertically-oriented conductive region extending through a majority of the thickness of the semiconductor layer and electrically connecting the doped horizontal region and the underlying doped region. In another embodiment, the transistor can include a gate dielectric layer, wherein the field-effect transistor is designed to have a maximum gate voltage of approximately 20 V, a maximum drain voltage of approximately 30 V, and a figure of merit no greater than approximately 30 mΩ*nC. | 03-24-2011 |
20110193143 | ELECTRONIC DEVICE INCLUDING DOPED REGIONS BETWEEN CHANNEL AND DRAIN REGIONS AND A PROCESS OF FORMING THE SAME - An electronic device can include a drain region of a transistor, wherein the drain region has a first conductivity type. The electronic device can also include a channel region of the transistor, wherein the channel region has a second conductivity type opposite the first conductivity type. The electronic device can further include a first doped region having the first conductivity type, wherein the first doped region extends from the drain region towards the channel region. The electronic device can still further include a second doped region having the first conductivity type, wherein the second doped region is disposed between the first doped region and the channel region. | 08-11-2011 |
20110193160 | ELECTRONIC DEVICE INCLUDING A BURIED INSULATING LAYER AND A VERTICAL CONDUCTIVE STRUCTURE EXTENDING THERETHROUGH AND A PROCESS OF FORMING THE SAME - An electronic device can include a buried conductive region, a buried insulating layer over the buried conductive region, and a semiconductor layer disposed over the buried insulating layer, wherein the semiconductor layer has a primary surface and an opposing surface, and the buried conductive region is disposed closer to the opposing surface than to the primary surface. The electronic device can also include a current-carrying electrode of a first transistor, wherein the current carrying electrode is disposed along the primary surface and spaced apart from the buried conductive layer. The electronic device can also include a vertical conductive structure extending through the buried insulating layer, wherein the vertical conductive structure is electrically connected to the current-carrying electrode and the buried conductive region. | 08-11-2011 |
20110193177 | ELECTRONIC DEVICE INCLUDING A DOPED REGION DISPOSED UNDER AND HAVING A HIGHER DOPANT CONCENTRATION THAN A CHANNEL REGION AND A PROCESS OF FORMING THE SAME - An electronic device can include a drain region of a transistor, a channel region of the transistor, and a doped region that is disposed under substantially all of the channel region, is not disposed under substantially all of a heavily doped portion of the drain region, and has a higher dopant concentration compared to the channel region. A process of forming an electronic device can include forming a drain region, a channel region, and a doped region, wherein the drain region has a conductivity type opposite that of the channel and doped region. After forming the drain, channel, and doped regions, the doped region is disposed under substantially all of the channel region, the doped region is not disposed under substantially all of a heavily doped portion of the drain region, and the drain region is laterally closer to the doped region than to the channel region. | 08-11-2011 |
20110207277 | METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING VERTICAL CHARGE-COMPENSATED STRUCTURE AND SUB-SURFACE CONNECTING LAYER - In one embodiment, a semiconductor device is formed having vertical localized charge-compensated trenches, trench control regions, and sub-surface doped layers. The vertical localized charge-compensated trenches include at least a pair of opposite conductivity type semiconductor layers. The trench control regions are configured to provide a generally vertical channel region electrically coupling source regions to the sub-surface doped layers. The sub-surface doped layers are further configured to electrically connect the drain-end of the channel to the vertical localized charge compensation trenches. Body regions are configured to isolate the sub-surface doped layers from the surface of the device. | 08-25-2011 |
20110233635 | SEMICONDUCTOR TRENCH STRUCTURE HAVING A SEALING PLUG - In one embodiment, a semiconductor device is formed having a trench structure. The trench structure includes a single crystalline semiconductor plug formed along exposed upper surfaces of the trench. In one embodiment, the single crystalline semiconductor plug seals the trench to form a sealed core. | 09-29-2011 |
20110233658 | ELECTRONIC DEVICE INCLUDING AN INSULATING LAYER HAVING DIFFERENT THICKNESSES AND A CONDUCTIVE ELECTRODE AND A PROCESS OF FORMING THE SAME - An electronic device includes a transistor, wherein the electronic device can include a semiconductor layer having a primary surface, a channel region, a gate electrode, a source region, a conductive electrode, and an insulating layer lying between the primary surface of the semiconductor layer and the conductive electrode. The insulating layer has a first region and a second region, wherein the first region is thinner than the second region. The channel region, gate electrode, source region, or any combination thereof can lie closer to the first region than the second region. The thinner portion can allow for faster switch of the transistor, and the thicker portion can allow a relatively large voltage difference to be placed across the insulating layer. Alternative shapes for the transitions between the different regions of the insulating layer and exemplary methods to achieve such shapes are also described. | 09-29-2011 |
20110292632 | METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT AND STRUCTURE THEREFOR - A semiconductor component and a method of manufacturing the semiconductor component that reduces parasitic elements. A semiconductor chip is coupled to a semiconductor chip receiving area of a support structure. The semiconductor chip has at least two power semiconductor devices. A drain contact of a first power semiconductor device is coupled to a source contact of a second power semiconductor device and the drain and source contacts of the first and second power semiconductor devices are joined to the semiconductor chip receiving area. Another semiconductor chip may be bonded to a second semiconductor chip receiving area of the support structure. An energy storage element may be coupled between the source contact of the first power semiconductor device and the drain contact of the second semiconductor device. A protective structure may be formed over the semiconductor chips and the energy storage element. | 12-01-2011 |
20110300679 | PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING A TRENCH AND A CONDUCTIVE STRUCTURE THEREIN - A process of forming an electronic device can include providing a workpiece comprising a substrate, including an underlying doped region, and a semiconductor portion overlying the underlying doped region, wherein the semiconductor portion has a primary surface spaced apart from the underlying doped region. The process can further include forming a vertically-oriented conductive region extending from the primary surface towards the underlying doped region, forming a horizontally-oriented doped region adjacent to the primary surface, and forming a conductive electrode over, spaced-apart from, and electrically insulated from the vertically-oriented doped region. The process can still further include forming a gate electrode after forming the conductive electrode. The electronic device can include a transistor that includes the underlying doped region, the vertically-oriented conductive region, the horizontally-oriented doped region, and the gate electrode. | 12-08-2011 |
20120112278 | ELECTRONIC DEVICE INCLUDING A WELL REGION - An electronic device including an integrated circuit can include a buried conductive region and a semiconductor layer overlying the buried conductive region, and a vertical conductive structure extending through the semiconductor layer and electrically connected to the buried conductive region. The integrated circuit can further include a doped structure having an opposite conductivity type as compared to the buried conductive region, lying closer to an opposing surface than to a primary surface of the semiconductor layer, and being electrically connected to the buried conductive region. The integrated circuit can also include a well region that includes a portion of the semiconductor layer, wherein the portion overlies the doped structure and has a lower dopant concentration as compared to the doped structure. In other embodiment, the doped structure can be spaced apart from the buried conductive region. | 05-10-2012 |
20120248548 | ELECTRONIC DEVICE INCLUDING AN INTEGRATED CIRCUIT WITH TRANSISTORS COUPLED TO EACH OTHER - An electronic device, including an integrated circuit, can include a buried conductive region and a semiconductor layer overlying the buried conductive region, wherein the semiconductor layer has a primary surface and an opposing surface lying closer to the buried conductive region. The electronic device can also include a first doped region and a second doped region spaced apart from each other, wherein each is within the semiconductor layer and lies closer to primary surface than to the opposing surface. The electronic device can include current-carrying electrodes of transistors. A current-carrying electrode of a particular transistor includes the first doped region and is a source or an emitter and is electrically connected to the buried conductive region. Another current-carrying electrode of a different transistor includes the second doped region and is a drain or a collector and is electrically connected to the buried conductive region. | 10-04-2012 |
20130153987 | ELECTRONIC DEVICE COMPRISING A CONDUCTIVE STRUCTURE AND AN INSULATING LAYER WITHIN A TRENCH AND A PROCESS OF FORMING THE SAME - An electronic device can include a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a trench extends through at least approximately 50% of the thickness of semiconductor layer to a depth. The electronic device can further include a conductive structure within the trench, wherein the conductive structure extends at least approximately 50% of the depth of the trench. The electronic device can still further include a vertically-oriented doped region within the semiconductor layer adjacent to and electrically insulated from the conductive structure; and an insulating layer disposed between the vertically-oriented doped region and the conductive structure. A process of forming an electronic device can include patterning a semiconductor layer to define a trench extending through at least approximately 50% of the thickness of the semiconductor layer and forming a vertically-oriented doped region after patterning the semiconductor layer to define the trench. | 06-20-2013 |
20130153988 | ELECTRONIC DEVICE INCLUDING A TRENCH WITH A FACET AND A CONDUCTIVE STRUCTURE THEREIN AND A PROCESS OF FORMING THE SAME - An electronic device can include a transistor structure including a semiconductor layer overlying a substrate and a trench extending into the semiconductor layer having a tapered shape. In an embodiment, the tapered shape includes a facet. The transistor structure can include a source region and a drain region wherein different portions of the drain regions are disposed adjacent to the primary surface and within the trench. In another embodiment, different facets may be spaced apart from each other. Processes of forming the tapered etch can be tailored based on the needs or desires of a fabricator. | 06-20-2013 |
20130153991 | ELECTRONIC DEVICE COMPRISING CONDUCTIVE STRUCTURES AND AN INSULATING LAYER BETWEEN THE CONDUCTIVE STRUCTURES AND WITHIN A TRENCH AND A PROCESS OF FORMING THE SAME - An electronic device can include a substrate including an underlying doped region and a semiconductor layer overlying the substrate. A trench can have a sidewall and extend at least partly through the semiconductor layer. The electronic device can further include a first conductive structure adjacent to the underlying doped region, an insulating layer, and a second conductive structure within the trench. The insulating layer can be disposed between the first and second conductive structures, and the first conductive structure can be disposed between the insulating layer and the underlying doped region. Processes of forming the electronic device may be performed such that the first conductive structure includes a conductive fill material or a doped region within the semiconductor layer. The first conductive structure can allow the underlying doped region to be farther from the channel region and allow R | 06-20-2013 |
20130153992 | ELECTRONIC DEVICE INCLUDING A TAPERED TRENCH AND A CONDUCTIVE STRUCTURE THEREIN AND A PROCESS OF FORMING THE SAME - An electronic device can include a semiconductor layer, and a trench extending into the semiconductor layer and having a tapered shape. In an embodiment, the trench includes a wider portion and a narrower portion. The electronic device can include a doped semiconductor region that extends to a narrower portion of the trench and has a dopant concentration greater than a dopant concentration of the semiconductor layer. In another embodiment, the electronic device can include a conductive structure within a relatively narrower portion of the trench, and a conductive electrode within a relatively wider portion of the trench. In another embodiment, a process of forming the electronic device can include forming a sacrificial plug and may allow insulating layers of different thicknesses to be formed within the trench. | 06-20-2013 |
20140035052 | ELECTRONIC DEVICE INCLUDING A TAPERED TRENCH AND A CONDUCTIVE STRUCTURE THEREIN - An electronic device can include a semiconductor layer, and a trench extending into the semiconductor layer and having a tapered shape. In an embodiment, the trench includes a wider portion and a narrower portion. The electronic device can include a doped semiconductor region that extends to a narrower portion of the trench and has a dopant concentration greater than a dopant concentration of the semiconductor layer. In another embodiment, the electronic device can include a conductive structure within a relatively narrower portion of the trench, and a conductive electrode within a relatively wider portion of the trench. In another embodiment, a process of forming the electronic device can include forming a sacrificial plug and may allow insulating layers of different thicknesses to be formed within the trench. | 02-06-2014 |
20140091399 | ELECTRONIC DEVICE INCLUDING A TRANSISTOR AND A VERTICLE CONDUCTIVE STRUCTURE - An electronic device, including an integrated circuit, can include a buried conductive region and a semiconductor layer overlying the buried conductive region, wherein the semiconductor layer has a primary surface and an opposing surface lying closer to the buried conductive region. The electronic device can also include a first doped region and a second doped region spaced apart from each other, wherein each is within the semiconductor layer and lies closer to primary surface than to the opposing surface. The electronic device can include current-carrying electrodes of transistors. A current-carrying electrode of a particular transistor includes the first doped region and is a source or an emitter and is electrically connected to the buried conductive region. Another current-carrying electrode of a different transistor includes the second doped region and is a drain or a collector and is electrically connected to the buried conductive region. | 04-03-2014 |
20140103424 | ELECTRONIC DEVICE COMPRISING CONDUCTIVE STRUCTURES AND AN INSULATING LAYER BETWEEN THE CONDUCTIVE STRUCTURES AND WITHIN A TRENCH - An electronic device can include a substrate including an underlying doped region and a semiconductor layer overlying the substrate. A trench can have a sidewall and extend at least partly through the semiconductor layer. The electronic device can further include a first conductive structure adjacent to the underlying doped region, an insulating layer, and a second conductive structure within the trench. The insulating layer can be disposed between the first and second conductive structures, and the first conductive structure can be disposed between the insulating layer and the underlying doped region. Processes of forming the electronic device may be performed such that the first conductive structure includes a conductive fill material or a doped region within the semiconductor layer. The first conductive structure can allow the underlying doped region to be farther from the channel region and allow R | 04-17-2014 |
20140145256 | ELECTRONIC DEVICE COMPRISING A CONDUCTIVE STRUCTURE AND AN INSULATING LAYER WITHIN A TRENCH - An electronic device can include a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a trench extends through at least approximately 50% of the thickness of semiconductor layer to a depth. The electronic device can further include a conductive structure within the trench, wherein the conductive structure extends at least approximately 50% of the depth of the trench. The electronic device can still further include a vertically-oriented doped region within the semiconductor layer adjacent to and electrically insulated from the conductive structure; and an insulating layer disposed between the vertically-oriented doped region and the conductive structure. A process of forming an electronic device can include patterning a semiconductor layer to define a trench extending through at least approximately 50% of the thickness of the semiconductor layer and forming a vertically-oriented doped region after patterning the semiconductor layer to define the trench. | 05-29-2014 |
20140252409 | Circuit Including a Switching Element, a Rectifying Element, and a Charge Storage Element - A circuit can include a pair of switching elements that have terminals electrically connected to terminals of a power supply and have other terminals electrically connected to an output terminal. The circuit can include rectifying elements and one or more charge storage elements. The circuit may be used as a Buck converter. The rectifying element(s) and charge storage element(s) may help to reduce ringing at an output terminal of the circuit during normal operation and reduce the likelihood of exceeding a breakdown voltage between current-carrying electrodes of a switching element within the circuit during a switching operation. | 09-11-2014 |
20140252430 | Electronic Device Including a Dielectric Layer Having a Non-Uniform Thickness and a Process of Forming The Same - An electronic device can include a transistor having a drain region, a source region, a dielectric layer, and a gate electrode. The dielectric layer can have a first portion and a second portion, wherein the first portion is relatively thicker and closer to the drain region; the second portion is relatively thinner and closer to the source region. The gate electrode of the transistor can overlie the first and second portions of the dielectric layer. In another aspect, an electronic device can be formed using two different dielectric layers having different thicknesses. A gate electrode within the electronic device can be formed over portions of the two different dielectric layers. The process can eliminate masking and doping steps that may be otherwise used to keep the drain dopant concentration closer to the concentration as originally formed. | 09-11-2014 |
20140252466 | Electronic Device Including a Conductive Electrode and a Process of Forming the Same - An electronic device can include a semiconductor layer, an insulating layer overlying the semiconductor layer, and a conductive electrode. In an embodiment, a first conductive electrode member overlies the insulating layer, and a second conductive electrode member overlies and is spaced apart from the semiconductor layer. The second conductive electrode member has a first end and a second end opposite the first end, wherein each of the semiconductor layer and the first conductive electrode member are closer to the first end of the second conductive electrode member than to the second end of the second conductive electrode member. In another embodiment, the conductive electrode can be substantially L-shaped. In a further embodiment, a process can include forming the first and second conductive electrode members such that they abut each other. The second conductive electrode member can have the shape of a sidewall spacer. | 09-11-2014 |
20140252473 | Electronic Device Including a Vertical Conductive Structure and a Process of Forming the Same - An electronic device can include a buried conductive region and a semiconductor layer over the buried conductive region. The electronic device can further include a horizontally-oriented doped region and a vertical conductive region, wherein the vertical conductive region is electrically connected to the horizontally-oriented doped region and the buried conductive region. The electronic device can still further include an insulating layer overlying the horizontally-oriented doped region, and a first conductive electrode overlying the insulating layer and the horizontally-oriented doped region, wherein a portion of the vertical conductive region does not underlie the first conductive electrode. The electronic device can include a Schottky contact that allows for a Schottky diode to be connected in parallel with a transistor. Processes of forming an electronic device allow a vertical conductive region to be formed after a conductive electrode, a gate electrode, a source region, or both. | 09-11-2014 |
20140252484 | Electronic Device Including a Schottky Contact - An electronic device can include a semiconductor layer having a primary surface, and a Schottky contact comprising a metal-containing member in contact with a horizontally-oriented lightly doped region within the semiconductor layer and lying adjacent to the primary surface. In an embodiment, the metal-containing member lies within a recess in the semiconductor layer and contacts the horizontally-oriented lightly doped region along a sidewall of the recess. In other embodiment, the Schottky contact may not be formed within a recess, and a doped region may be formed within the semiconductor layer under the horizontally-oriented lightly doped region and have a conductivity type opposite the horizontally-oriented lightly doped region. The Schottky contacts can be used in conjunction with power transistors in a switching circuit, such as a high-frequency voltage regulator. | 09-11-2014 |
20140264523 | ELECTRONIC DEVICE INCLUDING A CAPACITOR STRUCTURE AND A PROCESS OF FORMING THE SAME - An electronic device can include a capacitor structure. In an embodiment, the electronic device can include a buried conductive region, a semiconductor layer having a primary surface, a horizontally-oriented doped region adjacent to the primary surface, an insulating layer overlying the horizontally-oriented doped region, and a conductive electrode overlying the insulating layer. The capacitor structure can include a first capacitor electrode including a vertical conductive region electrically connected to the horizontally-oriented doped region and the buried conductive region. The capacitor structure can further include a capacitor dielectric layer and a second capacitor electrode within a trench. The capacitor structure can be spaced apart from the conductive electrode. In another embodiment, an electronic device can include a first transistor, a trench capacitor structure, and a second transistor, wherein the first transistor is coupled to the trench capacitor structure, and the second transistor does not have a corresponding trench capacitor structure. | 09-18-2014 |
20140264574 | ELECTRONIC DEVICE INCLUDING VERTICAL CONDUCTIVE REGIONS AND A PROCESS OF FORMING THE SAME - An electronic device can include different vertical conductive structures that can be formed at different times. The vertical conductive structures can have the same or different shapes. In an embodiment, an insulating spacer can be used to help electrically insulate a particular vertical conductive structure from another part of the workpiece, and an insulating spacer may not be used to electrically isolate a different vertical conductive structure. The vertical conductive structures can be tailored for particular electrical considerations or to a process flow when formation of other electronic components may also be formed within either or both of the particular vertical conductive structures. | 09-18-2014 |