Patent application number | Description | Published |
20080265174 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD - A charged particle beam writing apparatus includes an unit configured to irradiate a beam, a deflector configured to deflect the beam, a stage, on which a target is placed, configured to perform moving continuously, an lens configured to focus the beam onto the target, an unit configured to calculate a correction amount for correcting positional displacement of the beam on a surface of the target resulting from a first magnetic field caused by the lens and a second magnetic field caused by an eddy current generated by the first magnetic field and the moving of the stage, an unit configured to calculate a correction position where the positional displacement on the surface of the target has been corrected using the correction amount, and an unit configured to control the deflector so that the beam may be deflected onto the correction position. | 10-30-2008 |
20090242807 | CORRECTING SUBSTRATE FOR CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS - A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO | 10-01-2009 |
20100067778 | APPARATUS AND METHOD FOR PATTERN INSPECTION - A pattern inspection apparatus includes a light source, a stage configured to mount thereon a substrate with a pattern formed thereon, a first laser measuring unit configured to measure a position of the stage by using a laser beam, a sensor configured to capture a pattern image obtained from the pattern, formed on the substrate, irradiated by light from the light source, an optical system configured to focus the pattern image on the sensor, a second laser measuring unit configured to measure a position of the optical system by using a laser beam, a correction unit configured to correct a captured pattern image by using a difference between the position of the stage and the position of the optical system, and an inspection unit configured to inspect whether there is a defect of the pattern by using a corrected pattern image. | 03-18-2010 |
20100074511 | MASK INSPECTION APPARATUS, AND EXPOSURE METHOD AND MASK INSPECTION METHOD USING THE SAME - The present invention provides a mask inspection apparatus and method capable of inspecting masks used in double patterning with satisfactory accuracy. | 03-25-2010 |
20100074513 | MASK INSPECTION APPARATUS AND MASK INSPECTION METHOD - The present invention provides a mask inspection apparatus and method capable of eliminating distortion of each optical image, which is caused by distortions of mirrors and flexure of a mask, and performing a mask inspection with satisfactory accuracy. A stage with the mask held thereon is moved in X and Y directions and an optical image of each pattern written onto the mask is acquired while using the results of measurement by laser interferometers (Step S | 03-25-2010 |
20100178611 | Lithography method of electron beam - A charged particle beam writing method on a chemical amplification type resist, comprising: coating said chemical amplification type resist which contains an acid diffusion inhibitor, on a surface of a mask substrate, exposing charged particle beams to said chemical amplification type resist layer on said surface of the mask substrate, baking said chemical amplification type resist layer which said charged particle beams were exposed, and developing said chemical amplification type resist after the baking, wherein an exposure current density of said electron beams exposing ranges of 50 | 07-15-2010 |
20110068281 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND PROXIMITY EFFECT CORRECTION METHOD THEREOF - A charged particle beam drawing apparatus forms a map having meshes, forms representative figures, area of each representative figure in each mesh being equal to gross area of figures in each mesh, and calculates a proximity effect correction dose of the charged particle beam in each mesh on the basis of area of each representative figure in each mesh. If it is necessary to change the proximity effect correction dose of the charged particle beam for drawing at least one pattern corresponding to at least one figure, the charged particle beam drawing apparatus changes area of the at least one figure before the representative figures are formed by a representative figure forming portion, and changes the proximity effect correction dose of the charged particle beam for drawing the at least one pattern corresponding to the at least one figure, calculated by a proximity effect correction dose calculating portion. | 03-24-2011 |
20110255770 | INSPECTION SYSTEM AND METHOD FOR INSPECTING LINE WIDTH AND/OR POSITIONAL ERRORS OF A PATTERN - A method and system for imaging an object to be inspected and obtaining an optical image; creating a reference image from design pattern data; preparing an inspection recipe including one or more templates and parameter settings necessary for the inspection; checking the pattern and the template against each other, and selecting the reference image which corresponds to the template; detecting first and second edges in the selected reference image in accordance with the parameter setting using determined coordinates as a reference; detecting first and second edges in the optical image, this optical image corresponds to the selected reference image; and determining an inspection value by acquiring the difference between the line width of the optical image and the reference image using the first edge and second edge of the reference image and the first edge and second edges of the optical image. | 10-20-2011 |
20130010291 | APPARATUS AND METHOD FOR PATTERN INSPECTION - A pattern inspection apparatus includes a light source, a stage configured to mount thereon a substrate with a pattern formed thereon, a first laser measuring unit configured to measure a position of the stage by using a laser beam, a sensor configured to capture a pattern image obtained from the pattern, formed on the substrate, irradiated by light from the light source, an optical system configured to focus the pattern image on the sensor, a second laser measuring unit configured to measure a position of the optical system by using a laser beam, a correction unit configured to correct a captured pattern image by using a difference between the position of the stage and the position of the optical system, and an inspection unit configured to inspect whether there is a defect of the pattern by using a corrected pattern image. | 01-10-2013 |
20130240750 | MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTI CHARGED PARTICLE BEAM WRITING METHOD - A multi charged particle beam writing apparatus according to the present invention includes an aperture member, in which a plurality of openings are formed, to form multiple beams, a blanking plate having a plurality of blankers to respectively perform blanking deflection of a corresponding beam in multiple beams having passed through the plurality of openings of the aperture member, a blanking aperture member to block each of beams which were deflected to be in a beam off state by the plurality of blankers, a plural stage objective lens to focus multiple beams_having passed through the blanking aperture member onto the target object and a plurality of electrostatic lenses, at least one of which is arranged at each stage of the plural stage objective lens, to dynamically correct defocusing of the multiple beams during writing. | 09-19-2013 |