Patent application number | Description | Published |
20090313389 | FLEXIBLE REMOTE DATA MIRRORING - Methods, systems, and configured storage media are provided for flexible data mirroring. In particular, the invention provides many-to-one data mirroring, including mirroring from local servers running the same or different operating systems and/or file systems at two or more geographically dispersed locations. The invention also provides one-to-many data mirroring, mirroring with or without a dedicated private telecommunications link, and mirroring with or without a dedicated server or another server at the destination(s) to assist the remote mirroring unit(s). In addition, the invention provides flexibility by permitting the use of various combinations of one or more external storage units and/or RAID units to hold mirrored data. Spoofing, SCSI and other bus emulations, and further tools and techniques are used in various embodiments of the invention. | 12-17-2009 |
20100049798 | FLEXIBLE REMOTE DATA MIRRORING - Methods, systems, and configured storage media are provided for flexible data mirroring. In particular, the invention provides many-to-one data mirroring, including mirroring from local servers running the same or different operating systems and/or file systems at two or more geographically dispersed locations. The invention also provides one-to-many data mirroring, mirroring with or without a dedicated private telecommunications link, and mirroring with or without a dedicated server or another server at the destination(s) to assist the remote mirroring unit(s). In addition, the invention provides flexibility by permitting the use of various combinations of one or more external storage units and/or RAID units to hold mirrored data. Spoofing, SCSI and other bus emulations, and further tools and techniques are used in various embodiments of the invention. | 02-25-2010 |
Patent application number | Description | Published |
20080261815 | Bioherbicide from Festuca Spp - The present invention relates to methods of using m-tyrosine compounds from | 10-23-2008 |
20110136749 | COMPOUNDS USEFUL FOR TREATING NEURODEGENERATIVE DISORDERS - As described herein, the present invention provides compounds useful for treating or lessening the severity of a neurodegenerative disorder. The present invention also provides methods of treating or lessening the severity of such disorders wherein said method comprises administering to a patient a compound of the present invention, or composition thereof. Said method is useful for treating or lessening the severity of, for example, Alzheimer's disease. | 06-09-2011 |
20110136750 | COMPOUNDS USEFUL FOR TREATING NEURODEGENERATIVE DISORDERS - As described herein, the present invention provides compounds useful for treating or lessening the severity of a neurodegenerative disorder. The present invention also provides methods of treating or lessening the severity of such disorders wherein said method comprises administering to a patient a compound of the present invention, or composition thereof. Said method is useful for treating or lessening the severity of, for example, Alzheimer's disease. | 06-09-2011 |
20110275708 | POLYCYCLIC COMPOUNDS AND METHODS RELATED THERETO - The invention relates to a novel compound of formula I or pharmaceutically acceptable salts thereof as well as pharmaceutical, nutraceutical, and botanical drug compositions and therapeutic methods related thereto. In certain embodiments, the compounds are used for the treatment of abnormal cell growth, hyperproliferative disorders, and inflammatory diseases in mammals. In other embodiments, the invention encompasses methods to isolate and synthesize the compounds. | 11-10-2011 |
20140128458 | POLYCYCLIC COMPOUNDS AND METHODS RELATED THERETO - The invention relates to a novel compound of the formula | 05-08-2014 |
20150073045 | POLYCYCLIC COMPOUNDS AND METHODS RELATED THERETO - The invention relates to a novel compound of the formula | 03-12-2015 |
Patent application number | Description | Published |
20110009593 | Polymeric Bioplastics - One aspect of the present invention relates to a polymeric material. The invention also relates to a method of making the aforementioned polymer comprising extracting a fungus, wherein the fungus is, for example, an endophytic fungus, such as CR873. The invention further relates to a bioplastic composition comprising the aforementioned polymer. | 01-13-2011 |
20140303102 | Small Molecule Compounds that Control Mammal-Pathogenic Nematodes - The present invention relates to methods of modifying nematode behavior using certain isolated modulator compounds. Also disclosed are methods of promoting or inhibiting reproduction in a nematode population, methods of promoting or inhibiting nematode aggregation at a mammal, and methods of treating or preventing parasite infection of a mammal. | 10-09-2014 |
20140303360 | Small Molecule Compounds for the Control of Nematodes - The present invention relates to compounds involved in nematode signaling. | 10-09-2014 |
20140364386 | Small Molecule Compounds That Control Plant- and Insect-Pathogenic Nematodes - The present invention relates to methods of modifying nematode behavior using certain isolated modulator compounds. Also disclosed are methods of promoting or inhibiting reproduction in a nematode population, methods of promoting or inhibiting nematode aggregation at a first location, and methods of treating or preventing parasite infection of a plant. | 12-11-2014 |
20150018291 | The Utility of Nematode Small Molecules - The present invention relates to methods of treating immune disorders and/or inflammation using certain modulator compounds. In one embodiment, the present invention provides a method of treating an immune and inflammatory disorders disorder by administering a composition comprising a therapeutically effective dosage of an ascaroside compound, or a mixture of ascaroside compounds, or a mixture containing at least one ascaroside. | 01-15-2015 |
Patent application number | Description | Published |
20120156375 | INKJET INK COMPOSITION WITH JETTING AID - An inkjet ink composition comprising water, self-dispersing carbon black pigment particles, and a copolymer jetting aid; wherein the copolymer jetting aid comprises a copolymer obtained from polymerizing at least 5 weight percent of one or more monomers comprising a long hydrocarbon chain having greater than or equal to 12 carbons and from 5 to 30 weight percent of one or more acidic monomers. The inks of the present invention have improved stable drop velocities over extended droplet ejection events. | 06-21-2012 |
20130162722 | INKJET PRINTING METHOD AND SYSTEM - Pigment-based ink composition, and inkjet printing systems and methods employing such ink composition. The ink contains an aqueous polyurethane additive including polyurethane polymer chains including at least first segments having a polysiloxane group of Mw greater than about 10,000 pendant to the polyurethane polymer chain backbone, wherein (i) the polyurethane additive further comprises polyurethane polymer chains including second segments having a polysiloxane group of Mw less than about 6,000 either pendant to the polyurethane polymer backbone or a part of the polyurethane polymer backbone or (ii) the composition further comprises a polysiloxane polymer additive of Mw of less than about 6,000 which is not pendant to a polyurethane polymer backbone or a part of a polyurethane polymer backbone. The polyurethane additive has a Mw of at least 10,000 and a sufficient number of acid groups to provide an acid number greater than 20. | 06-27-2013 |
20130237661 | INKJET INK COMPOSITION - Pigment-based ink composition, and inkjet printing systems and methods employing such ink composition. The ink contains an aqueous polyurethane additive including polyurethane polymer chains including at least first segments having a polysiloxane group of Mw greater than about 10,000 pendant to the polyurethane polymer chain backbone, wherein (i) the polyurethane additive further comprises polyurethane polymer chains including second segments having a polysiloxane group of Mw less than about 6,000 either pendant to the polyurethane polymer backbone or a part of the polyurethane polymer backbone or (ii) the composition further comprises a polysiloxane polymer additive of Mw of less than about 6,000 which is not pendant to a polyurethane polymer backbone or a part of a polyurethane polymer backbone. The polyurethane additive has a Mw of at least 10,000 and a sufficient number of acid groups to provide an acid number greater than 20. | 09-12-2013 |
20140063113 | INKJET PRINTING SYSTEM - An inkjet printing system including an inkjet printer having a printhead and an inkjet ink in an ink tank supplying the inkjet ink to the printhead, wherein the ink tank includes a free ink compartment and a capillary media compartment vented to the atmosphere and in fluid communication with ink in the free ink compartment, and wherein the inkjet ink includes water, a self-dispersing carbon black pigment having greater than 11 weight % volatile surface functional groups, and a surfactant at a concentration of 0.10 weight percent or less, and having a static surface tension of 37.5 dynes/cm or less at 25° C. The system provides high print density and text sharpness when printed onto an ink receiving medium, and provides good performance in a bubbler-type ink tank which reduces the amount of ink trapped in the ink tank. | 03-06-2014 |
Patent application number | Description | Published |
20090189194 | Electrostatic Discharge (ESD) Protection Circuit Placement in Semiconductor Devices - Semiconductor devices, methods of manufacturing thereof, and methods of arranging circuit components of an integrated circuit are disclosed. In one embodiment, a semiconductor device includes an array of a plurality of devices arranged in a plurality of rows. At least one electrostatic discharge (ESD) protection circuit or a portion thereof is disposed in at least one of the plurality of rows of the array of the plurality of devices. | 07-30-2009 |
20090189195 | Radio Frequency (RF) Circuit Placement in Semiconductor Devices - Semiconductor devices, methods of manufacturing thereof, and methods of arranging circuit components of an integrated circuit are disclosed. In one embodiment, a semiconductor device includes an array of a plurality of devices arranged in a plurality of rows. At least one radio frequency (RF) circuit or a portion thereof is disposed in at least one of the plurality of rows of the array of the plurality of devices. | 07-30-2009 |
20090220893 | Method for Patterning a Semiconductor Wafer - A method for etching a pattern on a surface is disclosed. A mask layer is disposed over a surface and a resist is disposed over the mask layer. The resist is exposed to light through the mask exposing primary pattern and sidelobe regions. The resist is developed and the mask layer is etched according to the resist pattern. A first material is deposited over the mask layer, wherein a gap is formed beneath the material and over the primary pattern region. The material is etched back so that the gap is exposed, and the primary pattern region is etched using the first material as a mask. | 09-03-2009 |
20100073648 | Masks and Methods of Manufacture Thereof - Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment includes a method of generating an assist feature of a lithography mask. The method includes providing a layout for a material layer of a semiconductor device, the layout including a pattern for at least one feature of the semiconductor device. The method includes forming an assist feature in the pattern for the at least one feature, wherein the assist feature extends completely through the pattern for the at least one feature. | 03-25-2010 |
20100124820 | Method of Making a Contact in a Semiconductor Device - To form a semiconductor device, an insulating layer is formed over a conductive region and a pattern transfer layer is formed over the insulating layer. The pattern transfer layer is patterned in the reverse tone of a layout of recesses to be formed in the insulating layer such that the pattern transfer layer remains over regions where the recesses are to be formed. A mask material is formed over the insulating layer and is aligned with the pattern transfer layer. Remaining portions of the pattern transfer layer are removed and recesses are etched in the insulating layer using the mask material as a mask. | 05-20-2010 |
20100301457 | Lithography Masks, Systems, and Manufacturing Methods - Lithography masks, lithography systems, methods of manufacturing lithography masks, methods of altering material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a lithography mask includes a first pattern for at least one material layer of at least one die, the first pattern being oriented in a first position. The lithography mask includes a second pattern for at least one material layer of the at least one die, the second pattern being oriented in a second position. The second position is different than the first position. | 12-02-2010 |
20120155608 | Lithography Masks, Systems, and Manufacturing Methods - Lithography masks, lithography systems, methods of manufacturing lithography masks, methods of altering material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a lithography mask includes a first pattern for at least one material layer of at least one die, the first pattern being oriented in a first position. The lithography mask includes a second pattern for at least one material layer of the at least one die, the second pattern being oriented in a second position. The second position is different than the first position. | 06-21-2012 |
20140099799 | Lithography Masks, Systems, and Manufacturing Methods - Lithography masks, lithography systems, methods of manufacturing lithography masks, methods of altering material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a lithography mask includes a first pattern for at least one material layer of at least one die, the first pattern being oriented in a first position. The lithography mask includes a second pattern for at least one material layer of the at least one die, the second pattern being oriented in a second position. The second position is different than the first position. | 04-10-2014 |