Patent application number | Description | Published |
20080261405 | HYDROGEN ASHING ENHANCED WITH WATER VAPOR AND DILUENT GAS - An oxygen-free hydrogen plasma ashing process particularly useful for low-k dielectric materials based on hydrogenated silicon oxycarbide materials. The main ashing step includes exposing a previously etched dielectric layer to a plasma of hydrogen and optional nitrogen, a larger amount of water vapor, and a yet larger amount of argon or helium. Especially for porous low-k dielectrics, the main ashing plasma additionally contains a hydrocarbon gas such as methane. The main ashing may be preceded by a short surface treatment by a plasma of a hydrogen-containing reducing gas such as hydrogen and optional nitrogen. | 10-23-2008 |
20090139657 | ETCH SYSTEM - A semiconductor processing system includes a factory interface. A central transfer chamber is coupled to the factory interface. A first number of etch chambers are coupled to the central transfer chamber. The first number of etch chambers are configured to etch a substrate at about a first processing time. A second number of post-etch treatment chambers are coupled to the central transfer chamber. The second number of post-etch treatment chambers are configured to process the substrate at about a second processing time, wherein a ratio of the first number to the second number is substantially proportional to a ratio of the first processing time to the second processing time. | 06-04-2009 |
20090163033 | METHODS FOR EXTENDING CHAMBER COMPONENT LIFE TIME - Methods for extending service life of chamber components for semiconductor processing are provided. In one embodiment, the method includes maintaining a substrate support assembly disposed in a processing chamber at a first temperature, performing a first plasma process on a first substrate in the processing chamber while the substrate support is maintained at the first temperature, and raising the temperature of the substrate support assembly to a second temperature after completion of the first plasma process. | 06-25-2009 |
20100003828 | METHODS FOR ADJUSTING CRITICAL DIMENSION UNIFORMITY IN AN ETCH PROCESS WITH A HIGHLY CONCENTRATED UNSATURATED HYDROCARBON GAS - Methods for etching a metal material layer disposed on a substrate to form features with desired profile and uniform critical dimension (CD) of the features across the substrate. In one embodiment, a method for etching a material layer disposed on a substrate includes providing a substrate having a metal layer disposed on a substrate into an etch reactor, flowing a gas mixture containing at least a halogen containing gas and a passivation gas into the reactor, the passivation gas including a nitrogen containing gas and an unsaturated hydrocarbon gas, wherein the nitrogen gas and the unsaturated hydrocarbon gas and etching the metal layer using a plasma formed from the gas mixture. The CD uniformity could be conveniently, efficiently tuned by the gas ratio, if the concentration of the unsaturated hydrocarbon gas is high enough that the molecular ratio of the unsaturated hydrocarbon gas in the diluent gas times the reactor pressure in milliTorr is greater than 1.25. | 01-07-2010 |
20100059181 | LOW SLOPED EDGE RING FOR PLASMA PROCESSING CHAMBER - Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees. | 03-11-2010 |
20120091095 | METHOD AND APPARATUS FOR REDUCING PARTICLE DEFECTS IN PLASMA ETCH CHAMBERS - In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF | 04-19-2012 |
20130032478 | LOW SLOPED EDGE RING FOR PLASMA PROCESSING CHAMBER - Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees. | 02-07-2013 |
20150063405 | SUBSTRATE PLACEMENT DETECTION IN SEMICONDUCTOR EQUIPMENT USING THERMAL RESPONSE CHARACTERISTICS - Methods and apparatus for determining proper placement of a substrate upon a substrate support in a process chamber are disclosed. In some embodiments, a method for detecting substrate placement in a process chamber includes placing a substrate on a support surface of a substrate support with the process chamber; modifying a pressure within the chamber to create a detection pressure within the chamber; sensing a first temperature of the substrate support; monitoring a thermal response characteristic of the substrate support after placing the substrate on the substrate support; comparing the thermal response characteristic to a predetermined response characteristic; and determining whether the substrate is placed correctly based upon the comparison of the thermal response characteristic to the predetermined response characteristic. | 03-05-2015 |
20150064880 | POST ETCH TREATMENT TECHNOLOGY FOR ENHANCING PLASMA-ETCHED SILICON SURFACE STABILITY IN AMBIENT - Methods for performing post etch treatments on silicon surfaces etched using halogen chemistry are provided. The methods may be performed in-situ a chamber in which the silicon surfaces where etch, ex-situ the chamber, or in a hybrid process that combines both in-situ and ex-situ post etch treatment processes. In one embodiment the post etch treatment process includes exposing a substrate having a silicon surface etched using halogen chemistry to a gas mixture comprising C | 03-05-2015 |
20150096589 | METHOD OF NON-DESTRUCTIVE POST TUNGSTEN ETCH RESIDUE REMOVAL - Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having refractory metal portions disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate in a processing chamber, the substrate having a refractory metal disposed thereon, forming a process gas comprising water vapor, maintaining a process pressure in the processing chamber above about 0.5 Torr, forming a plasma in the process gas to form an activated water vapor and exposing the refractory metal to the activated water vapor. | 04-09-2015 |
20150137681 | PLASMA GENERATION SOURCE EMPLOYING DIELECTRIC CONDUIT ASSEMBLIES HAVING REMOVABLE INTERFACES AND RELATED ASSEMBLIES AND METHODS - Plasma generation source employing dielectric conduit assemblies having removable interfaces and related assemblies and methods are disclosed. The plasma generation source (PGS) includes an enclosure body having multiple internal surfaces forming an internal chamber having input and output ports to respectively receive a precursor gas for generation of plasma and to discharge the plasma. A dielectric conduit assembly may guide the gas and the plasma away from the internal surface where particulates may be generated. The dielectric conduit assembly includes a first and second cross-conduit segments. The dielectric conduit assembly further includes parallel conduit segments extending from the second cross-conduit segment to distal ends which removably align with first cross-conduit interfaces of the first cross-conduit segment without leaving gaps. In this manner, the dielectric conduit assembly is easily serviced, and reduces and contains particulate generation away from the output port. | 05-21-2015 |
20160099162 | SINGLE RING DESIGN FOR HIGH YIELD, SUBSTRATE EXTREME EDGE DEFECT REDUCTION IN ICP PLASMA PROCESSING CHAMBER - Embodiments of the invention provide a single ring comprising a circular ring-shaped body with an inner surface, closest in proximity to a centerline of the body, and an outer surface opposite the inner surface. The body has a bottom surface with a slot formed therein and a top surface with an outer end, adjacent to the outer surface, and an inner end adjacent to a slope extending, towards the centerline, down to a step on the inner surface. The body has a lip, disposed on the inner surface extending out from a vertical face below the step toward the centerline of the body, and is configured to support a substrate thereon. The body is sized such that a gap of less than about 2 mm is formed on the lip between the substrate and the vertical face of the step. | 04-07-2016 |