Patent application number | Description | Published |
20080274338 | WIRING SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a wiring substrate includes the steps of: (a) forming a sacrificial layer in a first pattern on a substrate; (b) forming a catalyst layer in a second pattern on the substrate; (c) immersing the substrate in an electroless plating liquid, thereby depositing a metal layer on the catalyst layer in the second pattern; and (d) heating to remove the sacrificial layer and to form a metal layer in a third pattern, wherein the third pattern is a region where the first pattern and the second pattern overlap each other. | 11-06-2008 |
20080299313 | Film forming apparatus and film forming method - A film forming apparatus that forms a film on an inner wall of a tubular body by a chemical vapor deposition method is provided. The film forming apparatus includes: a source material storage section; a process gas generation section that forms process gas containing source material supplied from the source material storage section; a film forming section that forms a film on an inner wall of the tubular body; a process gas supply tube that connects to the tubular body and supplies the process gas from the process gas generation section to the tubular body; and a process gas discharge tube that connects to the tubular body and discharges the process gas that has passed through the tubular body, wherein the film forming section includes a retaining section that holds the tubular body. | 12-04-2008 |
20090142500 | Functional water, method for manufacturing functional water and method for manufacturing ceramics film - Functional water includes water and alcohol, wherein a peak originated from OH groups of the water and a peak originated from OH groups of the alcohol in | 06-04-2009 |
20090184290 | Precursor composition, method for manufacturing precursor composition, method for manufacturing ferroelectric film, piezoelectric element, semiconductor device, piezoelectric actuator, ink jet recording head, and ink jet printer - To provide precursor compositions for forming ferroelectric, methods for manufacturing precursor compositions, and methods for forming ferroelectric films using precursor compositions, which have excellent composition controllability in a liquid phase method, and in which metal compositions such as lead can be reused. A precursor composition pertains to a precursor composition including a precursor for forming a ferroelectric, wherein the ferroelectric is expressed by a general formula of AB | 07-23-2009 |
20090230821 | Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element - A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure. | 09-17-2009 |
20100207492 | Ceramic and method of manufacturing the same, Dielectric capacitor, semiconductor device, and element - A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure. | 08-19-2010 |
20100289384 | Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element - A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure. | 11-18-2010 |
Patent application number | Description | Published |
20080261026 | Element substrate and method of manufacturing the same - A method of manufacturing an element substrate including: forming a release layer on a first support substrate; forming a metal layer having a predetermined pattern on the release layer; applying a sol-gel solution including a material for an inorganic substrate to the first support substrate; removing a solvent from the sol-gel solution by heat treatment to form the inorganic substrate; and removing the metal layer from the first support substrate by decomposing the release layer to transfer the metal layer to the inorganic substrate. | 10-23-2008 |
20080299356 | PLATED SUBSTRATE AND ITS FABRICATION METHOD - A plated substrate includes a substrate, a resin formed body having a specified pattern including catalytic metal that functions as a catalyst for electroless plating, and a metal layer formed on a top surface of the resin layer. | 12-04-2008 |
20080308762 | PIEZOELECTRIC LAMINATE, SURFACE ACOUSTIC WAVE DEVICE, THIN-FILM PIEZOELECTRIC RESONATOR, AND PIEZOELECTRIC ACTUATOR - A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (K | 12-18-2008 |
20090093070 | CAPACITOR, METHOD OF MANUFACTURING THE SAME, METHOD OF MANUFACTURING FERROELECTRIC MEMORY DEVICE, METHOD OF MANUFACTURING ACTUATOR, AND METHOD OF MANUFACTURING LIQUID JET HEAD - A method of manufacturing a capacitor, including: forming a lower electrode on a substrate; forming a dielectric film of a ferroelectric or a piezoelectric on the lower electrode; forming an upper electrode on the dielectric film; and forming a silicon oxide film so that at least the dielectric film is covered with the silicon oxide film, the silicon oxide film being formed by using trimethoxysilane. | 04-09-2009 |
20090153625 | CAPACITOR, METHOD OF MANUFACTURING THE SAME, METHOD OF MANUFACTURING FERROELECTRIC MEMORY DEVICE, METHOD OF MANUFACTURING ACTUATOR, AND METHOD OF MANUFACTURING LIQUID JET HEAD - A method of manufacturing a capacitor, including: forming a lower electrode on a substrate; forming a dielectric film of a ferroelectric or a piezoelectric on the lower electrode; forming an upper electrode on the dielectric film; and forming a silicon oxide film so that at least the dielectric film is covered with the silicon oxide film, the silicon oxide film being formed by using trimethoxysilane. | 06-18-2009 |
20090174754 | INSULATING TARGET MATERIAL, METHOD OF MANUFACTURING INSULATING TARGET MATERIAL, CONDUCTIVE COMPLEX OXIDE FILM, AND DEVICE - An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO | 07-09-2009 |
20100013894 | PIEZOELECTRIC LAMINATE, SURFACE ACOUSTIC WAVE DEVICE, THIN-FILM PIEZOELECTRIC RESONATOR, AND PIEZOELECTRIC ACTUATOR - A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (K | 01-21-2010 |
Patent application number | Description | Published |
20090219343 | ACTUATOR, METHOD FOR MANUFACTURING ACTUATOR, DROPLET EJECTION DEVICE, DROPLET EJECTION HEAD AND PRINTER - An actuator includes a deformable substrate, a magnetic body having an opening, provided above the substrate, and a coil that is disposed above the substrate and surrounds the magnetic body. | 09-03-2009 |
20090230346 | PIEZOELECTRICS, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC ACTUATOR - A piezoelectric body includes a perovskite type compound that is expressed by a compositional formula being Pb (Zr | 09-17-2009 |
20090243438 | PIEZOELECTRIC MATERIAL AND PIEZOELECTRIC ELEMENT - A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1−x)% of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1−x)Tc(A)+xTc(B)≧300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B. | 10-01-2009 |
20090246360 | OXIDE SOURCE MATERIAL SOLUTION, OXIDE FILM, PIEZOELECTRIC ELEMENT, METHOD FOR FORMING OXIDE FILM AND METHOD FOR MANUFACTURING PIEZOELECYTRIC ELEMENT - An oxide source material solution for forming an oxide film having a composition expressed by Pb | 10-01-2009 |
20120086758 | PIEZOELECTRIC MATERIAL AND PIEZOELECTRIC ELEMENT - A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1−x) % of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1−x)Tc(A)+x Tc(B)≧300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B. | 04-12-2012 |
20130147880 | PIEZOELECTRIC MATERIAL AND PIEZOELECTRIC ELEMENT - A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100 (1-x) % of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1-x) Tc (A)+x Tc (B) >300° C., where Tc (A) is the Curie temperature of the material A and Tc (B) is the Curie temperature of the material B. | 06-13-2013 |
Patent application number | Description | Published |
20130022839 | PBNZT FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR PRODUCING FERROELECTRIC FILM - To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO | 01-24-2013 |
20130153813 | POLING TREATMENT METHOD, PLASMA POLING DEVICE, PIEZOELECTRIC SUBSTANCE, AND MANFACTURING METHOD THEREFOR - The plasma poling device includes: a holding electrode | 06-20-2013 |
20130192878 | FERROELECTRIC FILM, ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING FERROELECTRIC FILM - A method for manufacturing a ferroelectric film including the steps of forming a burnable material film containing hydrogen of not less than 1% by weight on a substrate; forming an amorphous thin film including a ferroelectric material on the burnable material film; and oxidizing and crystallizing the amorphous thin film while supplying hydrogen to the amorphous thin film by burning the burnable material film through heating of the burnable material film and the amorphous thin film in an oxygen atmosphere, to thereby form a first ferroelectric film on the substrate. | 08-01-2013 |
20130323534 | FERROELECTRIC CRYSTAL FILM, ELECTRONIC COMPONENT, MANUFACTURING METHOD OF FERROELECTRIC CRYSTAL FILM, AND MANUFACTURING APPARATUS THEREFOR - There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. | 12-05-2013 |
20140191618 | POLING TREATMENT METHOD, PLASMA POLING DEVICE, PIEZOELECTRIC BODY AND MANUFACTURING METHOD THEREOF, FILM FORMING DEVICE AND ETCHING DEVICE, AND LAMP ANNEALING DEVICE - A plasma poling device includes a holding electrode ( | 07-10-2014 |
20140242379 | FERROELECTRIC FILM AND METHOD FOR MANUFACTURING THE SAME - To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K | 08-28-2014 |
20140319405 | POLING TREATMENT METHOD, MAGNETIC FIELD POLING DEVICE, AND PIEZOELECTRIC FILM - To perform poling treatment in a simple procedure by dry process. An aspect of the invention is a magnetic field poling device including: a first holding part configured to hold a film-to-be-poled | 10-30-2014 |
20150030846 | CRYSTAL FILM, METHOD FOR MANUFACTURING CRYSTAL FILM, VAPOR DEPOSITION APPARATUS AND MULTI-CHAMBER APPARATUS - To improve the single crystallinity of a stacked film in which a ZrO | 01-29-2015 |