Hwan
Hong-Sun Hwan, Suwon-Si KR
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20130170274 | SEMICONDUCTOR MEMORY DEVICE STORING MEMORY CHARACTERISTIC INFORMATION, MEMORY MODULE AND MEMORY SYSTEM HAVING THE SAME, AND OPERATING METHOD THEREOF - A semiconductor memory device includes a cell array including a plurality of regions accessed by first addresses, where the plurality of regions including at least two groups of regions having respectively different memory characteristics. The device further includes a nonvolatile array for nonvolatile storage of group information indicative of which of the least two groups each of the plurality of regions belongs. | 07-04-2013 |
Kim Chul Hwan, Seongnam-Si KR
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20110032650 | Reclosing control system and method using superconducting fault current limiter - The present invention relates to a reclosing control system and method using a superconducting fault current limiter. The reclosing control system includes a superconducting fault current limiting device in which two circuits, each having a switch and a superconducting fault current limiter connected in series with each other, are connected in parallel with each other. A recloser is disposed between the superconducting fault current limiting device and a distribution line and is configured to control reclosing. The distribution line is connected to the recloser and is configured to transfer power to a load. | 02-10-2011 |
Song Hwan, Park KR
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20110111582 | METHOD FOR DEPOSITING ULTRA FINE GRAIN POLYSILICON THIN FILM - Disclosed is a method for depositing a polysilicon thin film with ultra-fine crystal grains. According to the present invention, the polysilicon thin film is deposited on a substrate by supplying source gases inside a chamber in which the substrate is loaded, wherein the source gases include a silicon-based gas and an oxygen-based gas. The mixing ratio of the oxygen-based gas to the silicon-based gas may be 0.15 or less (excluding 0). The oxygen within the thin film may be 20 atomic % (atomic percentage) or less (excluding 0). | 05-12-2011 |
Sonkyo Hwan, Seoul KR
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20140209958 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a second electrode layer electrically connected to the second semiconductor layer, and an anti-crack layer disposed on a boundary on which the light emitting structure is segmented on a chip basis, wherein the anti-crack layer is disposed under the light emitting structure and includes a metal material contacting the light emitting structure. | 07-31-2014 |
Suh-Fon Hwan, Shanghai CN
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20150018605 | EMBRYO CULTURE METHODS AND MEDIA - Improved methods of culturing embryos in media having amounts of lactate that have not previously been recognized as beneficial for embryo development. Also, compositions, devices and kits related to the same. | 01-15-2015 |
Yang Ji Hwan, Jeollanam-Do KR
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20100012173 | INTEGRATED THIN-FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - Provided are an integrated thin-film solar cell and a method of manufacturing the same. The method comprises forming and patterning a conductive material to be adjacently spaced a predetermined distance apart from each other on a substrate; forming a solar cell (semiconductor) layer on the resultant substrate; obliquely depositing a first transparent conductive material on the solar cell layer; etching the solar cell layer using the first transparent conductive material as a mask; and obliquely depositing a second transparent conductive material on the resultant substrate, and electrically connecting the conductive material with the first transparent conductive material. | 01-21-2010 |
20100018574 | INTEGRATED THIN-FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - Provided are an integrated thin-film solar cell and a method of manufacturing the same. The method comprises forming and patterning a conductive material to be adjacently spaced a predetermined distance apart from each other on a substrate; forming a solar cell (semiconductor) layer on the resultant substrate; obliquely depositing a first transparent conductive material on the solar cell layer; etching the solar cell layer using the first transparent conductive material as a mask; and obliquely depositing a second transparent conductive material on the resultant substrate, and electrically connecting the conductive material with the first transparent conductive material. | 01-28-2010 |