Patent application number | Description | Published |
20080203470 | Lateral compensation component - A transistor is provided which includes a lateral compensation component. The lateral compensation component includes a plurality of n (or n−) layer/p (or p−) layer pairs, wherein adjacent ones of said pairs are separated by one of an insulator region and/or an intrinsic silicon region. | 08-28-2008 |
20090184373 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device is provided which has a semiconductor substrate. An active cell area having at least one active cell is formed in the semiconductor substrate, wherein at least sections of the active cell area are surrounded by an edge termination region. An integrated gate runner structure is arranged at least partially in the edge termination region and has at least one low electrical resistance portion and at least one high electrical resistance portion which are electrically connected in series with each other. | 07-23-2009 |
20090302814 | SYSTEM AND METHOD FOR CONTROLLING A CONVERTER - A system and method for controlling a converter. One embodiment provides the cyclic actuation of a first switching element, used for applying an input voltage to an inductive storage element. A second switching element is used as a first rectifier element in a rectifier arrangement, in a step-up converter. An actuating circuit is provided for the first and second switching elements. | 12-10-2009 |
20090322293 | SWITCHING CONVERTER INCLUDING A RECTIFIER ELEMENT WITH NONLINEAR CAPACITANCE - A switching converter including a rectifier element with nonlinear capacitance. One embodiment provides a switching element configured to be driven in the on state and in the off state. A first capacitive element is between the load path terminals of the switching element and has a nonlinear capacitance characteristic curve dependent on a voltage between the load path connections. A rectifier element is coupled between the inductive storage element and the capacitive storage element such that it enables a current flow between the inductive storage element and the capacitive storage element when the switching element is driven in the off state. A second capacitive element is between the load path terminals of the rectifier element and has a nonlinear capacitance characteristic curve dependent on a voltage between the load path connections. | 12-31-2009 |
20100044788 | SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE AND PROCESS - A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas. | 02-25-2010 |
20100078775 | SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE - A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned. | 04-01-2010 |
20120032255 | INTEGRATED CIRCUIT HAVING COMPENSATION COMPONENT - An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed. | 02-09-2012 |
20130320444 | INTEGRATED CIRCUIT HAVING VERTICAL COMPENSATION COMPONENT - An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed. | 12-05-2013 |
20140231969 | SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE - A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned. | 08-21-2014 |