Patent application number | Description | Published |
20080297276 | Nano-resonator including beam with composite structure - A nano-resonator including a beam having a composite structure may include a silicon carbide beam and/or a metal conductor. The metal conductor may be vapor-deposited on the silicon carbide beam. The metal conductor may have a density lower than a density of the silicon carbide beam. | 12-04-2008 |
20090029118 | METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD - A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate, whereby the etched bottom is made uniformly even in a deep step, the edge curvature is minimized, and a T-shape is prevented from being formed on the etched wall face to thereby improve the etching quality. Further, the etching depth is previously controlled by lapping or polishing, the upper and lower substrates are precisely boned to each other using the alignment key, and a multi-layer processing is possibly performed thereto, so that the precision and the uniformity in structure of the oscillator or amplifier is obtained. | 01-29-2009 |
20090120903 | Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method - A method of multi-stage substrate etching is provided. The method comprises the steps of: forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface, so that etching quality is improved, a precise bonding between the substrates is obtained using the alignment key positioned on each substrate, and a multi-layer process is carried out. | 05-14-2009 |
20090289542 | Electron beam focusing electrode and electron gun using the same - An electron beam focusing electrode and an electron gun using the same may include a plate having a polygonal through-hole; at least a projecting portion formed on at least one side of the through-hole. By using the electron beam focusing electrode, a spreading phenomenon of an electron beam having a rectangular cross section may be reduced. Further, the output of the electron gun may be increased, and electron beams may be easily focused. | 11-26-2009 |
20100188315 | Electronic mirror and method for displaying image using the same - An electronic mirror and a method for displaying an image using the electronic mirror are provided. The electronic mirror may include a display unit, a detecting unit and a control unit. The detecting unit may receive a signal transmitted from the outside. The control unit may control the detecting unit and the display unit to display the signal received at the detecting unit on the display unit as an image. The image displayed on the display unit may be output from the electronic mirror through the detecting unit. The electronic mirror may further include a reflecting unit. A light from the outside may pass through the detecting unit and the display unit and then be reflected on the reflecting unit. The reflected light may be output from the electronic mirror through the display unit and the detecting unit. | 07-29-2010 |
20100208152 | 2D/3D switchable integral imaging systems - An integral imaging system may include a lens unit. The lens unit may include a first substrate; a second substrate; a first electrode on the first substrate; a second electrode on the second substrate; a liquid crystal layer between the first and second substrates; and an array of nanostructures protruding from the first substrate into the liquid crystal layer. The first and second electrodes may be configured to apply one or more voltages to the array of nanostructures. When the one or more voltages are applied to the array of nanostructures, one or more electric fields may be formed between the array of nanostructures and the second electrode, varying an arrangement of molecules in the liquid crystal layer and forming a refractive index distribution in the liquid crystal layer. | 08-19-2010 |
20110096250 | Active lenses, stereoscopic image display apparatuses including active lenses and methods of operating the same - An active lens includes: a first nanoelectrode unit; a second nanoelectrode unit formed to face the first nanoelectrode unit; and a liquid crystal layer disposed between the first nanoelectrode unit and the second nanoelectrode unit. Liquid crystal molecules of the liquid crystal layer are aligned according to an electric field formed by a voltage applied to the first and second nanoelectrode units to form a refractive power. | 04-28-2011 |
20120127562 | ACTIVE OPTICAL DEVICE USING PHASE CHANGE MATERIAL - An active optical device is provided. The active optical device includes an optically variable layer having a refractive index which changes according to temperature; and a temperature control unit that controls a temperature of one or more regions of the optically variable layer. | 05-24-2012 |
20120133450 | METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD - A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate. | 05-31-2012 |
20120154715 | ACTIVE OPTICAL DEVICE EMPLOYING REFRACTIVE INDEX VARIABLE REGIONS - An active optical device includes a substrate; a plurality of refractive index variable regions formed on the substrate; and a voltage applier which applies an electric field to the plurality of refractive index variable regions. | 06-21-2012 |
20120242927 | ACTIVE OPTICAL DEVICE AND DISPLAY APPARATUS INCLUDING THE SAME - An active optical device and a display apparatus are provided. The active optical device includes a graphene layer; a plurality of carbon nanotubes (CNTs) disposed on the graphene layer; a transparent electrode layer spaced apart from the plurality of CNTs; and a liquid crystal layer disposed between the graphene layer and the transparent electrode layer. The display apparatus includes a display unit for displaying at least one of two-dimensional (2D) and three-dimensional (3D) images; and the active optical device disposed on the display unit. | 09-27-2012 |
20130069731 | METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD - A method of multi-stage substrate etching, includes forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface. | 03-21-2013 |
20130135709 | ACTIVE OPTICAL DEVICE AND DISPLAY APPARATUS INCLUDING THE SAME - An active optical device and a display apparatus including the same are provided. The active optical device includes: first to third electrodes that are sequentially disposed spaced apart from one another; a first refractive index change layer disposed between the first electrode and the second electrode and in which a refractive index is changed by an electric field; and a second refractive index change layer disposed between the second electrode and the third electrode and in which a refractive index is changed by an electric field. | 05-30-2013 |
20130193340 | ELECTRON BEAM FOCUSING ELECTRODE AND ELECTRON GUN USING THE SAME - An electron beam focusing electrode and an electron gun using the same may include a plate having a polygonal through-hole; at least a projecting portion formed on at least one side of the through-hole. By using the electron beam focusing electrode, a spreading phenomenon of an electron beam having a rectangular cross section may be reduced. Further, the output of the electron gun may be increased, and electron beams may be easily focused. | 08-01-2013 |
20130201437 | VARIFOCAL LENS - A varifocal lens including a first liquid crystal layer; a first electrode portion disposed below the first liquid crystal layer and having a flat shape; a first non-uniform electric field generator which generates a non-uniform electric field in the first liquid crystal layer together with the first electrode portion, and the first non-uniform electric field generator including a second electrode portion having a flat shape. | 08-08-2013 |
20140132999 | OPTICAL HEAD FOR HOLOGRAM OPTICAL APPARATUS AND METHOD OF OPERATING THE SAME - An optical head for a hologram optical apparatus and a method of operating the same are provided. The optical head for the hologram optical apparatus includes a reference light unit for guiding reference light, a signal light unit for guiding signal light, and a light source unit for providing 1 the reference light and the signal light to the reference light unit and the signal light unit, wherein the reference light unit and the signal light unit are stacked. The signal light unit includes: a plurality of optical waveguides stacked sequentially; composite hologram optical elements and lighting hologram optical elements disposed on the plurality of optical waveguides; an optical modulator for modulating light output from the plurality of the optical waveguides; and a lens for condensing light output from the optical modulator onto a recording layer. | 05-15-2014 |
20140285863 | METHOD AND APPARATUS FOR HOLOGRAPHIC RECORDING - Provided is a holographic recording method in which an interference fringe between a reference beam and a signal beam, modulated according to information regarding a plurality of hologram pixels, is recorded on a holographic recording medium, the holographic recording method including multiplexing-recording the interference fringe of the plurality of hologram pixels such that at least a part of the interference fringe recorded of neighboring hologram pixels of the plurality of hologram pixels is overlapped. | 09-25-2014 |
Patent application number | Description | Published |
20110108704 | Image sensors and methods of operating the same - Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively. | 05-12-2011 |
20110108835 | Transistors, methods of manufacturing a transistor and electronic devices including a transistor - A transistor, a method of manufacturing a transistor, and an electronic device including a transistor are provided, the transistor may include a channel layer having a multi-layer structure. The channel layer may have a double layer structure or a triple layer structure. At least two layers of the channel layer may have different oxygen concentrations. | 05-12-2011 |
20110114939 | Transistors, electronic devices including a transistor and methods of manufacturing the same - Transistors, electronic devices including a transistor and methods of manufacturing the same are provided, the transistor includes an oxide semiconductor layer (as a channel layer) having compositions that vary in one direction. The channel layer may be an oxide layer including a first element, a second element, and Zn, which are metal elements. The amount of at least one of the first element, the second element, and Zn may change in a deposition direction of the channel layer. The first element may be any one of hafnium (Hf), yttrium (Y), tantalum (Ta), zirconium (Zr), gallium (Ga), aluminum (Al) or combinations thereof. The second element may be indium (In). The channel layer may have a multi-layered structure including at least two layers with different compositions. | 05-19-2011 |
20110141060 | Optical touch panels and methods of driving the same - An optical touch panel may include a plurality of light-sensing areas. The plurality of light-sensing areas may be integrally formed with pixels in a display panel or may be formed on the display panel, in order to sense incident light from outside the optical touch panel. A method of driving an optical touch panel may include sensing a change in an output from a plurality of light-sensing areas between two time points and determining that there is an optical input when the change in the output is greater than or equal to a first reference value that is defined in advance. The light-sensing areas may be integrally formed with pixels in a display panel or formed on a surface of the display panel, for sensing incident light from outside the optical touch panel. | 06-16-2011 |
20110147734 | Transistor, method of manufacturing transistor, and electronic device including transistor - Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a gate insulator of which at least one surface is treated with plasma. The surface of the gate insulator may be an interface that contacts a channel layer. The interface may be treated with plasma by using a fluorine (F)-containing gas, and thus may include fluorine (F). The interface treated with plasma may suppress the characteristic variations of the transistor due to light. | 06-23-2011 |
20110175080 | Transistors, methods of manufacturing a transistor, and electronic devices including a transistor - Transistors, methods of manufacturing a transistor, and electronic devices including a transistor are provided, the transistor includes a channel layer, a source and a drain respectively contacting opposing ends of the channel layer, a gate corresponding to the channel layer, a gate insulating layer between the channel layer and the gate, and a first passivation layer and a second passivation layer sequentially disposed on the gate insulating layer. The first passivation layer covers the source, the drain, the gate, the gate insulating layer and the channel layer. The second passivation layer includes fluorine (F). | 07-21-2011 |
20110240869 | X-ray detector including oxide semiconductor transistor - Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn). | 10-06-2011 |
20110241143 | X-ray pixels including double photoconductors and x-ray detectors including the x-ray pixels - Example embodiments are directed to X-ray detectors including double photoconductors. According to example embodiments, the X-ray detector includes a first photoconductor on which X-rays are incident, and a second photoconductor on which X-rays transmitted through the first photoconductor are incident. The first photoconductor and the second photoconductor include a tandem structure. The first photoconductor is formed of silicon and absorbs X-rays in a low energy band, and the second photoconductor is formed of a material that absorbs X-rays in an energy band higher than the low energy band of the X-rays absorbed by silicon. | 10-06-2011 |
20110309259 | Large-scale X-ray detectors and methods of manufacturing the same - Large-scale X-ray detectors and methods of manufacturing the same are provided, the large-scale X-ray detectors include a photoconductor layer configured to generate electrical charges according to an incident X-ray using an entire area of the photoconductor layer, a common electrode on an upper surface of the photoconductor layer, a plurality of pixel electrodes, configured to convert the electrical charges into electrical signals, on a lower surface of the photoconductor layer and divided into a plurality of groups, and a plurality of application-specific integrated circuits (ASICs) each corresponding to one of the groups. Each ASIC is configured to process the electrical signals conveyed via the pixel electrodes in the corresponding group. The ASICs process the electrical signals so that seamless image information is collectively generated by the ASICs with respect to the entire area of the photoconductor layer. | 12-22-2011 |
20120146016 | Wafer-Scale X-Ray Detector And Method Of Manufacturing The Same - A wafer-scale x-ray detector and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate electrically connected to a printed circuit substrate; a chip array having a plurality of pixel pads formed on a central region thereof and a plurality of pin pads formed at edges thereof on the seamless silicon substrate; a plurality of pixel electrodes formed to correspond to the pixel pads; vertical wirings and horizontal wirings formed to compensate a difference of regions expanded towards the pixel electrodes from the pixel pads between the chip array and the pixel electrodes; a redistribution layer having an insulating layer to separate the vertical wirings and the horizontal wirings; and a photoconductor layer and a common electrode which cover the pixel electrodes on the redistribution layer. | 06-14-2012 |
20120181440 | Pastes For Photoelectric Conversion Layers Of X-Ray Detectors, X-Ray Detectors And Methods Of Manufacturing The Same - A paste for a photoelectric conversion layer used in an X-ray detector includes photoconductive particles, an organic polymer binder, a first organic solvent to dissolve the organic polymer binder, and a second organic solvent. The second organic solvent has a boiling point in a range of between about 150° C. and about 210° C., inclusive. | 07-19-2012 |
20120211663 | X-Ray Detectors Including Diffusion Barrier Films - An X-ray detector includes a photoconductor, a first diffusion barrier film on a first surface of the photoconductor, at least one pixel electrode on the first diffusion barrier film, a signal transmitting unit to process an electrical signal output from the at least one pixel electrode, and a common electrode on a second surface of the photoconductor opposite to the first surface of the photoconductor. | 08-23-2012 |
20120223241 | Large-Scale X-Ray Detectors - An X-ray detector including a plurality of chips on a printed circuit board, each of the plurality of chips including a plurality of pixel pads on a center portion of the printed circuit board and a plurality of pin pads surrounding the plurality of pixel pads, a plurality of pixel electrodes on and corresponding to the plurality of chips, a redistribution layer electrically connecting the plurality of pixel electrodes and the plurality of pixel pads, a plurality of first electrode pads on a surface opposite to a surface of the plurality of chips including the plurality of pin pads, a wire electrically connecting the plurality of first electrode pads and the plurality of pin pads, a photoconductor on the plurality of pixel electrodes, and a common electrode on the photoconductor. | 09-06-2012 |
20130168563 | MULTI-ENERGY RADIATION DETECTORS AND METHODS OF MANUFACTURING THE SAME - A multi-energy radiation detector may include an array substrate including a plurality of unit circuits, and/or a photoelectric conversion layer on the array substrate. The photoelectric conversion layer may include a plurality of regions having thicknesses different from each other. A method of manufacturing a multi-energy radiation detector may include forming gate and first electrodes by forming and patterning a first metal layer on a substrate; forming an insulating layer on the gate and first electrodes; forming a channel layer by forming and patterning a semiconductor layer on the insulating layer; forming source, drain, and second electrodes by forming and patterning a second metal layer on the channel layer; forming a passivation layer to cover the source, drain, and second electrodes; forming a first photoelectric conversion layer on the passivation layer; and/or forming a second photoelectric conversion layer on part of the first photoelectric conversion layer. | 07-04-2013 |
20130175431 | DETECTOR HAVING LARGE AREA AND METHOD OF MANUFACTURING THE SAME - A detector includes a substrate; two first regions, each first region having a linear shape, and the two first regions being separated from each other on the substrate and arranged in parallel; and a pixel region provided between the two first regions and including a plurality of pixels, the pixel region including a plurality of second regions perpendicular to the two first regions, each of the two first regions including a peripheral circuit portion, each of the plurality of second regions including a driver line, and a width of each of the plurality of second regions being equal to or less than a width of a single pixel. | 07-11-2013 |
20130256545 | X-RAY DETECTORS - An X-ray detector may include a silicon substrate including a first area and a second area; a plurality of pixels in the first area configured to detect X-rays; a control pad in the second area configured to supply a common control signal to the plurality of pixels; and/or a power supply pad in the first area configured to supply a power supply voltage to groups of pixels grouped from among the plurality of pixels. | 10-03-2013 |
20150063543 | RADIATION DETECTORS, METHODS OF MANUFACTURING THE RADIATION DETECTORS, AND RADIATION IMAGING SYSTEMS INCLUDING THE RADIATION DETECTORS - A radiation detector may include: a first photoconductor layer including a plurality of photosensitive particles; and/or a second photoconductor layer on the first photoconductor layer, and including a plurality of crystals obtained by crystal-growing photosensitive material. At least some of the plurality of photosensitive particles of the first photoconductor layer may fill gaps between the plurality of crystals of the second photoconductor layer. A method of manufacturing a radiation detector may include: forming a first photoconductor layer by applying paste, including solvent mixed with a plurality of photosensitive particles, to a first substrate; forming a second photoconductor layer by crystal-growing photosensitive material on a second substrate; pressing the crystal-grown second photoconductor layer on the first photoconductor layer that is applied to the first substrate; and/or removing the solvent in the first photoconductor layer via a drying process. | 03-05-2015 |