Patent application number | Description | Published |
20110218431 | SUPERIOR ANALYZER FOR RAMAN SPECTRA WITH HIGH ACCEPTANCE CONE, RESOLUTION, TRANSMISSION, AND QUANTUM EFFICIENCY, AND STRONG BACKGROUND REDUCTION - A Raman analyzer for analyzing light emitted from a Raman cell is provided that has a beam splitter configured to split the light emitted from the Raman cell into a first beam and a second beam. An atomic vapor filter can be used to filter a Raman scattered line from the first beam and a chopper system can periodically interrupt the first and second beams that are directed towards a photo detector, which can convert light from the first and second beams into an electrical signal. The signal output from the photo detector can optionally be amplified, digitized, Fourier filtered, and/or subjected to Fourier analysis. | 09-08-2011 |
20130003055 | RAMAN SPECTROMETER FOR MONITORING TRACES OF DISSOLVED ORGANIC AND INORGANIC SUBSTANCES - A compact, ultra-sensitive, inexpensive NIR spontaneous Raman spectrometer is presented. High sensitivity is achieved by the use of a multi-pass cell configuration combined with the electromotive properties of silicon crystal surface. A thin layer of silicon oxide chemisorbs molecules, which stick to its surface without altering their spectroscopic signatures. This new Raman spectrometer may be used to detect less than 40 ng (≈0.5 n mol) of ammonium nitrate deposited on the silicon surface with the signal-to-noise ratio better than 50 during 0.1 s recording time and for an illuminated area of 2×10 | 01-03-2013 |
20130162988 | SUPERIOR ANALYZER FOR RAMAN SPECTRA WITH HIGH ACCEPTANCE CONE, RESOLUTION, TRANSMISSION, QUANTUM EFFICIENCY, AND STRONG BACKGROUND REDUCTION - A Raman analyzer for analyzing light emitted from a Raman cell is provided that has a beam splitter configured to split the light emitted from the Raman cell into a first beam and a second beam. An atomic vapor filter can be used to filter a Raman scattered line from the first beam and a chopper system can periodically interrupt the first and second beams that are directed towards a photo detector, which can convert light from the first and second beams into an electrical signal. The signal output from the photo detector can optionally be amplified, digitized, Fourier filtered, and/or subjected to Fourier analysis. | 06-27-2013 |
Patent application number | Description | Published |
20120135897 | Lubricant of solid or liquid consistency, exhibiting low viscosity ratio - The invention relates to a lubricant in the form of grease or thick lubricating gel or transmission oil, as well as motor or universal oils with a myriad of applications. As a result of its contents presented in the patent application is characteristic of low coefficient of friction ranging from 0.055 to 0.062. As the main component, the contents of the discussed lubricant includes three or four stearates of metals or hydroxistearates of metals, which interact and cause a noticeable reduction of friction drag on the lubricated surfaces. Additionally, these substances may include a number of other solid or liquid elements, which maintain low friction drags and, furthermore, improve the lubricant through increasing its load capacity, antirust characteristics, shear strength, etc. The lubricant made according to the invention underwent comparative tests against other greases and greasing oils, the accounts of which are included in the application as diagrams, descriptions of research tests and examples of the contents of the lubricant products. | 05-31-2012 |
20130225460 | PHYSICO-CHEMICAL AND USAGE PROPERTIES OF AN EXISTING LUBRICANT - This invention provides a method for improving the physico-chemical and usage properties of an existing lubricant, of a solid or liquid consistency, such as gear oils, engine oils and all-purpose oils. The method is based on complementing the composition of the existing lubricant with a mixture of several solid substances (thickeners), in an amount varying from 5 to 35 weight percent of the initial existing lubricant. As a result of their addition, a considerable improvement in a number of the lubricant's properties is achieved. For example, an increase in saturation load, as measured on a 4-ball apparatus of 1600 N to 3150 N; improved friction coefficient μ, the wear scar under 600 N load, and more. Using the method specified in the invention, it is possible to make significant improvements to the quality of a lubricant at relatively low cost. | 08-29-2013 |
Patent application number | Description | Published |
20090196543 | Fiber Optic Acceleration and Displacement Sensors - A fiber optic sensor for detecting acceleration or displacement includes a fiber optic probe with a multimode transmitting optical fiber, a multimode receiving optical fiber and a edge reflector spaced apart from the fiber probe. The reflector moves in a transverse direction substantially normal to the longitudinal axis of the fiber optic probe, so the amount of light received by the receiving fiber indicates a relative acceleration or a relative displacement of the reflective surface with respect to the fiber probe in the transverse direction of motion of the edge of the reflector. The reflector can be mounted on a cantilever beam. The sensor can have one transmitting fiber, two receiving fiber, and a reflector with two edges, each edge partially covering one of the receiving fibers. A triaxial sensor system has at least two two-fiber sensors. | 08-06-2009 |
20090252451 | Intensity Modulated Fiber Optic Strain Sensor - A strain sensor includes an optical fiber with at least one optical fiber, a reflector body with a reflective surface, a housing affixed to the optical fiber probe and to the reflector body. The reflective surface is spaced apart at a distance d from the ends of the probe's fibers and receives light from the end of the fiber and to reflect at least a portion of the light into the end of the fiber. The housing is attached to the fiber probe at a first end of the housing and attached to the reflector body at a second end of the housing. The housing is affixed to the material to be measured, and in the material causes a change in gap between the fiber end and the reflective surface, modulating the amount of light received in the receiving fiber, detectable by a photodetector connected to the receiving fiber. | 10-08-2009 |
20110305116 | Intensity Modulated Fiber Optic Hydrophones - A fiber optic hydrophone has a reflective diaphragm having an exposed face and a reflective protected face, at least one transmitting multimode optical fiber having an end spaced apart from the protected face of the diaphragm positioned to emit light toward the diaphragm housing, and a reservoir. A cavity is defined by the diaphragm and the interior surface of the housing. Silicone oil and a compliant elastomeric material with embedded air bubbles are located in the cavity. Ports between the cavity and the reservoir and the reservoir and the exterior of the hydrophone allow static pressure communication between the cavity and the exterior of the hydrophone. The fiber optic probe can have one transmitting multimode optical fiber and six receiving multimode optical fibers, or more or fewer optical fibers. A grating can protect the diaphragm from environmental damage. | 12-15-2011 |
Patent application number | Description | Published |
20110269636 | MATERIALS AND METHODS FOR IDENTIFYING PATIENTS AT HEIGHTEN RISK FOR DEVELOPING HER2+ RELATED BRAIN TUMORS - Aspects of the invention include methods for identifying patients with HER2+ cancers that are at a heightened risk for developing brain metastasis within three years of having been diagnosed with HER2+ cancer. Some embodiments are methods that include the steps of contacting at least a portion of the tumor tissue from patients with probes that interact with the products of a set of thirteen genes that are expressed in these patients at markedly higher levels than in similarly situated patients that are not a heightened risk for developing brain metastasis within this three year window. In some embodiments the tissue samples are assayed from the presence of RNA indicative of the expression of member of a set of 13 genes identified as being differentially expressed in patients with and without a heightened risk for developing brain metastasis. | 11-03-2011 |
20120130648 | DETERMINATION OF THE RISK OF DISTANT METASTASES IN SURGICALLY TREATED PATIENTS WITH NON-SMALL CELL LUNG CANCER IN STAGE I-IIIA - A method of determination of the risk of distant metastases in surgically treated patients with non-small cell lung cancer in stage I-IIIA based on that a sample of primary tumor tissue is acquired, from which at least one microRNA is extracted which retrotranscripted into complementary DNA (cDNA) by reverse transcription, wherefore microRNA in examined sample is quantificated with the use of quantitative PCR method while the expression value of each microRNA is referred to the reference expression values in a recurrence prediction model in which the expression values are correlated to the high and low risk of distant metastases is characterized by that the expression value of only one from twenty two microRNAs listed below in Table 1 in primary tumor tissue of non-small cell lung cancer is measured. | 05-24-2012 |
20120309638 | MARKERS AND METHODS FOR DETERMINING RISK OF DISTANT RECURRENCE OF NON-SMALL CELL LUNG CANCER IN STAGE I-IIIA PATIENTS - New markers for determination of the high risk of NSCLC distant recurrence (distant metastases), where the markers are selected from the group of hsa.miR-192, hsa.miR-194, hsa.miR-662, hsa.miR-502.3p, hsa.miR-128 and hsa.miR-362.5p. A method for determination of the risk of distant recurrence (distant metastases) of NSCLC in surgically treated patients in stage I-IIIA after pulmonary resection, where: total RNA is isolated from a fragment of NSCLC tumor, the amount and quality of RNA in the examined sample are determined, with biotechnology methods of measuring the amount of microRNAs, preferably quantitative RT-PCR, the expression (amount) of microRNA in tumor tissue is determined; and, subsequently, the microRNA expression is analyzed according to the model of prediction of the occurrence of distant metastases, where the high expression of microRNAs: hsa.miR-192, hsa.miR-194, hsa.miR-662 and low expression of microRNAs: has.miR-502.3p, hsa.miR-128 and hsa.miR-362.5p indicate the high risk of distant metastases. | 12-06-2012 |
Patent application number | Description | Published |
20100233757 | Synthesis and Use of Anti-Reverse Phosphorothioate Analogs of the Messenger RNA Cap - New RNA cap analogs are disclosed containing one or more phosphorothioates groups. The analogs also contain modifications at the 2′-O position of 7-methylguanosine that prevent them from being incorporated in the reverse orientation during in vitro synthesis of mRNA and that hence are “anti-reverse cap analogs” (ARCAs). The ARCA modification ensures that the S atom is precisely positioned within the active sites of cap-binding proteins in both the translational and decapping machinery. The new S-ARCA analogs are resistant to in vivo decapping enzymes. Some S-ARCAs have a higher affinity for eIF4E than the corresponding analogs not containing a phosphorothioate group. When mRNAs containing the various S-ARCAs are introduced into cultured cells, some are translated as much as five-fold more efficiently than mRNAs synthesized with the conventional analog m | 09-16-2010 |
20110092574 | mRNA Cap Analogs - Dinucleotide cap analogs are disclosed, modified at different phosphate positions with a boranophosphate group or a phosphoroselenoate group. The analogs are useful as reagents in the preparation of capped mRNAs and have increased stability both in vitro and in vivo. They may be used as inhibitors of cap-dependent translation. Optionally, the boranophosphate or phosphoroselenoate group has a 2′-O or 3′-O-alkyl group, preferably a methyl group, producing analogs called BH | 04-21-2011 |
20120195917 | Vaccine Composition Comprising 5'-CAP Modified RNA - The present invention relates to modification of RNA with 5′-cap analogs in order to improve the stability and increase the expression of said RNA, in particular in immature antigen presenting cells. The present invention provides a vaccine composition comprising said stabilized RNA, immature antigen presenting cells comprising said stabilized RNA, and methods for stimulating and/or activating immune effector cells and for inducing an immune response in an individual using said stabilized RNA. | 08-02-2012 |
Patent application number | Description | Published |
20080197411 | MOS TRANSISTOR DEVICE IN COMMON SOURCE CONFIGURATION - A semiconductor device includes a semiconductor substrate, a first p-channel laterally diffused metal oxide semiconductor (LDMOS) transistor formed over the semiconductor substrate and additional p-channel LDMOS transistors formed over the semiconductor substrate. First drain and gate electrodes are formed over the substrate and are coupled to the first LDMOS transistor. Additional drain and gate electrodes are formed over the substrate and are coupled to the second LDMOS transistor. A common source electrode for the first and second LDMOS transistors is also formed over the substrate. | 08-21-2008 |
20080246086 | SEMICONDUCTOR DEVICES HAVING CHARGE BALANCED STRUCTURE - A laterally diffused metal-oxide-semiconductor transistor device includes a substrate having a first conductivity type with a semiconductor layer formed over the substrate. A source region and a drain extension region of the first conductivity type are formed in the semiconductor layer. A body region of a second conductivity type is formed in the semiconductor layer. A conductive gate is formed over a gate dielectric layer that is formed over a channel region. A drain contact electrically connects the drain extension region to the substrate and is laterally spaced from the channel region. The drain contact includes a highly-doped drain contact region formed between the substrate and the drain extension region in the semiconductor layer, wherein a topmost portion of the highly-doped drain contact region is spaced from the upper surface of the semiconductor layer. A source contact electrically connects the source region to the body region. | 10-09-2008 |
20100171543 | PACKAGED POWER SWITCHING DEVICE - A packaged switching device for power applications includes at least one pair of power MOSFET transistor dies connected between upper and lower power source rail leads, a high side one of the pair of MOSFET transistor dies being connected to the upper power source rail lead and a low side one of the pair of MOSFET transistor dies being connected to the lower power source rail lead. At least one of the MOSFET transistor dies is configured for vertical current flow therethrough and has a source electrode at a backside thereof. | 07-08-2010 |
20110148376 | MOSFET WITH GATE PULL-DOWN - A MOSFET main switch transistor has a pull-down FET coupled between a drain thereof and the gate of the main switch transistor. A gate of the pull-down FET is coupled to the drain of the main switch transistor by a capacitor and is connected to a source thereof by a resistor. The pull-down FET is operated by capacitive coupling to the voltage drop across the main switch and can be used to hold the gate of the main switch transistor at or near its source potential to avoid or reduce unintentional turn-on of the main switch transistor by the Miller effect. | 06-23-2011 |
20110148506 | INTEGRATION OF MOSFETS IN A SOURCE-DOWN CONFIGURATION - An output stage for a switched mode power supply has a high-side switch having a first power FET and a first speed-up FET monolithically integrated onto a first die. A low-side switch has a second power FET and a second speed-up FET monolithically integrated onto a second die. A semiconductor device has the power FET and the speed-up FET monolithically integrated in a “source-down” configuration. A method of operating an output stage of a switched mode power supply alternately turns on and off a high-side and a low-side switch and drives at least one of the switches with a speed-up FET monolithically integrated with the switch. | 06-23-2011 |
20120012982 | CAPACITORS AND METHODS OF FORMING - Capacitors and methods of forming semiconductor device capacitors are disclosed. Trenches are formed to define a capacitor bottom plate in a doped upper region of a semiconductor substrate, a dielectric layer is formed conformally over the substrate within the trenches, and a polysilicon layer is formed over the dielectric layer to define a capacitor top plate. A guard ring region of opposite conductivity and peripheral recessed areas may be added to avoid electric field crowding. A central substrate of lower doping concentration may be provided to provide a resistor in series below the capacitor bottom plate. A series resistor may also be provided in a resistivity region of the polysilicon layer laterally extending from the trenched area region. Contact for the capacitor bottom plate may be made through a contact layer formed on a bottom of the substrate. A top contact may be formed laterally spaced from the trenched area by patterning laterally extended portions of one or more of the dielectric, polysilicon and top metal contact layers. | 01-19-2012 |
20130009253 | POWER MOSFET WITH INTEGRATED GATE RESISTOR AND DIODE-CONNECTED MOSFET - A power MOSFET is formed in a semiconductor device with a parallel combination of a shunt resistor and a diode-connected MOSFET between a gate input node of the semiconductor device and a gate of the power MOSFET. A gate of the diode-connected MOSFET is connected to the gate of the power MOSFET. Source and drain nodes of the diode-connected MOSFET are connected to a source node of the power MOSFET through diodes. The drain node of the diode-connected MOSFET is connected to the gate input node of the semiconductor device. The source node of the diode-connected MOSFET is connected to the gate of the power MOSFET. The power MOSFET and the diode-connected MOSFET are integrated into the substrate of the semiconductor device so that the diode-connected MOSFET source and drain nodes are electrically isolated from the power MOSFET source node through a pn junction. | 01-10-2013 |
20140001855 | MOS TRANSISTOR DEVICE IN COMMON SOURCE CONFIGURATION | 01-02-2014 |
20140034999 | POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE - A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well. | 02-06-2014 |
20140035032 | POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE - A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well. | 02-06-2014 |
20140035047 | POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE - A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well. | 02-06-2014 |
20140035102 | POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE - A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well. | 02-06-2014 |
20140070265 | FAST SWITCHING IGBT WITH EMBEDDED EMITTER SHORTING CONTACTS AND METHOD FOR MAKING SAME - Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or gown epitaxial silicon for controlled drift region thickness and fast switching speed. | 03-13-2014 |
20140183622 | SCHOTTKY POWER MOSFET - A semiconductor device containing a vertical power MOSFET with a planar gate and an integrated Schottky diode is formed by forming a source electrode on an extended drain of the vertical power MOSFET to form the Schottky diode and forming the source electrode on a source region of the vertical power MOSFET. The Schottky diode is connected through the source electrode to the source region. A drain electrode is formed at a bottom of a substrate of the semiconductor device. The Schottky diode is connected through the extended drain of the vertical power MOSFET to the drain electrode. | 07-03-2014 |
20140284701 | POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE - A MOSFET includes an active region formed on an SOI substrate. A buried well is formed in the active region. A drain region having the first conductivity type is formed in the active region and spaced laterally from a source region and the buried well. A body region is formed in the active region between the source and drain regions on the buried well, and a drift region is formed in the active region between the drain and body regions on at least a portion of the buried well. A shielding structure is formed proximate the upper surface of the active region, overlapping a gate. During conduction, the buried well forms a PN junction with the drift region which, in conjunction with the shielding structure, depletes the drift region. The MOSFET is configured to sustain a linear mode of operation of an inversion channel formed under the gate. | 09-25-2014 |
20140291762 | POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE - A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well. | 10-02-2014 |
Patent application number | Description | Published |
20100295152 | Precision high-frequency capacitor formed on semiconductor substrate - A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique. | 11-25-2010 |
20110042742 | STRUCTURES OF AND METHODS OF FABRICATING TRENCH-GATED MIS DEVICES - In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact between the gate metal and the polysilicon is normally made in a gate metal region that is outside the active region of the device. Various configurations for making the contact between the gate metal and the polysilicon are described, including embodiments wherein the trench is widened in the area of contact. Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs. | 02-24-2011 |
20110176247 | PRECISION HIGH-FREQUENCY CAPACITOR FORMED ON SEMICONDUCTOR SUBSTRATE - A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique. | 07-21-2011 |
Patent application number | Description | Published |
20130145357 | INTEGRATING APPLICATIONS - Method, computer program product and device for integrating a client application, associated with a service provider, with at least one web application instance implemented on a device platform of a device. A respective at least one user interface module of the client application is embedded into the at least one web application instance, wherein the at least one user interface module is implemented using web-based technology. Native parts of the client application are implemented in a centralized manner on the device, wherein the native parts of the client application are installed on the device and implemented using technology that is native to the device platform. A control module of the client application is implemented in a centralized manner on the device, wherein the control module is implemented using web-based technology. | 06-06-2013 |
20130239231 | Communication Between Web Applications - In an embodiment, communication is controlled between a service provider web application executed in a first web browser instance on a device platform of the device and a partner web application executed in a second web browser instance on the device platform. A signal is received, at a control module at the device, from the partner web application, the signal for initiating communication between the partner web application and the service provider web application. The control module, provided by the service provider and installed on the device, uses technology that is native to the device platform. The control module uses a list of partners approved by the service provider to determine whether the partner web application is approved for communication with the service provider web application. If the control module determines the partner web application is approved, the control module allows communication to proceed. | 09-12-2013 |
Patent application number | Description | Published |
20110267455 | SYSTEM FOR GENERATING A LIGHT BEAM IN THE AREA IN FRONT OF A MOTOR VEHICLE - A system is described for generating a light beam in the area in front of a motor vehicle, which system has the following components—a headlight which comprises at least one LED array comprising a plurality of light emitting diodes (LEDs) which can be electrically actuated separately, —an object detection device for detecting objects in the area around the motor vehicle, and—a position determining device for determining the position of a detected object relative to the motor vehicle. In this context, the light beam which is generated by the LED array in conjunction with an optical imaging system can be characterized by at least one horizontal illumination intensity distribution value, in which the contributions of at least two LEDs to the illumination intensity distribution value overlap at least partially in terms of the horizontal angle, wherein the illumination intensity can be defined respectively for a) different positions in front of the motor vehicle and b) different horizontal angles relative to a reference direction. For a detected object, a horizontal angle range which is critical in terms of dazzle is then identified in each case as a function of the position of the object with respect to the motor vehicle and as a function of an assumed or identified object width, and the individual LEDs are driven, while taking into account the overlapping, in terms of horizontal angle, of their contributions to the illumination intensity distribution value, in such a way that an illumination intensity limiting value is not exceeded in the horizontal angle range which is critical in terms of dazzle and in terms of the position of the detected object. | 11-03-2011 |
20150022083 | METHOD FOR CONTROLLING A MATRIX BEAM HEADLAMP WITH ADAPTIVE LIGHT FUNCTIONS - A method for controlling a matrix beam headlamp (M) with adaptive light functions in which using non-glare lighting and/or targeted lighting of objects (O) with segments (S1-Sn) of the light distribution of the matrix beam headlamp (M). Different switch-on and switch-off boundaries are defined for the individual segments (S1-Sn). | 01-22-2015 |
Patent application number | Description | Published |
20090176609 | TIMING BELT TENSIONER WITH STOPS CONTROLLED BY BRAKE DEVICE - A tensioner having a backstop device which allows free rotation of the pivot arm in a first direction but controls rotation of the pivot arm in a second, opposite direction. The backstop device permits a predetermined, limited amount of free rotation in the second direction and thereafter, employs a braking device to prevent rotation in the second direction if the torque that acts on the pivot art is less than a predetermined threshold. | 07-09-2009 |
20100235138 | Engine Flexible Drive Elongation Measurement - A system and method is provided for determining changes in the angular position of a driven pulley, with respect to a driving pulley, when the driven and driving pulleys are synchronously linked by a flexible drive member such as a toothed belt or a chain. From these determined changes in the angular positions, the system and method can determine the condition of the flexible drive member and can output an appropriate signal when the condition of the flexible drive member has exceed a pre-defined value. Further, the system and method can detect a variety of other undesired conditions in the operation of an engine and/or the relative angular position information can be used to alter operation of the engine to improve the engine's operating efficiency and/or reduce the emissions created during operation of the engine. | 09-16-2010 |
20110256969 | TENSIONER WITH SPRING DAMPER - A tensioner having a closing-type torsion spring that is employed to bias a pivot arm about a pivot shaft. The tensioner includes a damper that continuously contacts an inside surface of the torsion spring to dampen torsional vibration transmitted through the torsion spring. | 10-20-2011 |
20110312454 | TENSIONER WITH MICRO-ADJUSTMENT FEATURE - In one aspect, the invention is directed to a belt tensioner for tensioning a belt, comprising a pivot shaft that is fixedly mountable with respect to an engine block of an engine, a tensioner arm rotatably mounted to the pivot shaft for pivoting about a tensioner arm axis in a first direction and in an opposing second direction, a pulley rotatably mounted to the tensioner arm for rotation about a pulley axis, and a tensioner spring positioned to bias the tensioner arm in the first direction, wherein the tensioner spring has a first end and a second end, wherein the first end is engaged with the tensioner arm, and a micro adjustment mechanism that is operatively connected to control the position of the second end of the tensioner spring so as to control the tension in the tensioner spring. | 12-22-2011 |
20130098730 | CLUTCH FOR SELECTIVELY DRIVING AN ACCESSORY - A clutch assembly having a driver, an output member, a clutch spring, an armature and an actuator. The clutch spring includes a plurality of coils that are configured to be drivingly engaged with the driver. The clutch spring further includes first and second ends. The first end is configured to drivingly engage the output member to facilitate the transmission of rotary power from the driver, through the clutch spring and into the output member. The second end is engaged to the armature. The actuator is selectively operable for rotating the armature relative to the driver in a rotational direction opposite a predetermined rotational direction in which the driver is driven to thereby initiate at least partial disengagement of the coils of the clutch spring from the driver. | 04-25-2013 |
20130313068 | DRIVEN COMPONENT WITH CLUTCH FOR SELECTIVE OPERATION OF COMPONENT - A component, such as an engine accessory for an automotive engine, that has clutch with a helical clutch coil and an axially movable armature. The helical clutch coil is normally engaged so as to transmit rotary power between a driving member and a driven member. The armature can be moved to apply a force to a tang of the helical clutch coil that causes the helical clutch coil to disengage to an extent where full rotary power is not passed through the clutch to drive the component. | 11-28-2013 |
20140014458 | TENSIONER WITH SPRING DAMPER - A tensioner having a closing-type torsion spring that is employed to bias a pivot arm about a pivot shaft. The tensioner includes a damper, which contacts an inside surface of the torsion spring to dampen torsional vibration transmitted through the torsion spring, and a one-way clutch that is configured to permit unencumbered rotation of the pivot shaft in one rotational direction but to resist rotation of the pivot shaft in an opposite direction. | 01-16-2014 |
Patent application number | Description | Published |
20110314438 | Bug Clearing House - A computer-implemented system for managing software problem reports includes a registration sub-system to register software developers from multiple different developer organizations; an application store that makes a plurality of applications from a plurality of application developers available for acquisition by members of the public; an application bug tracker programmed to receive reports of problems with applications distributed using the application store, to receive data regarding the problems, and to associate the data with a particular application or developer of the particular application; and a report generator to produce one or more problem reports for a developer that has provided one or more applications, the problem reports including information about the data regarding the problems relating to particular applications submitted to the application store by the developer. | 12-22-2011 |
20120023475 | Bug Clearing House - A computer-implemented system for managing software problem reports includes a registration sub-system to register software developers from multiple different developer organizations; an application store that makes a plurality of applications from a plurality of application developers available for acquisition by members of the public; an application bug tracker programmed to receive reports of problems with applications distributed using the application store, to receive data regarding the problems, and to associate the data with a particular application or developer of the particular application; and a report generator to produce one or more problem reports for a developer that has provided one or more applications, the problem reports including information about the data regarding the problems relating to particular applications submitted to the application store by the developer. | 01-26-2012 |
20120278194 | USING FEEDBACK REPORTS TO DETERMINE PERFORMANCE OF AN APPLICATION IN A GEOGRAPHIC LOCATION - Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for ranking applications. In one aspect, a method includes receiving, from a computing device, a feedback report related to an application configured to run on the computing device, the feedback report including information indicative of an error with the application, and a geographic location of the computing device at a time when the application encountered the error; generating, based on the feedback report, one or more metrics indicative of a performance of the application in the geographic location; retrieving information indicative of other applications associated with metrics indicative of a performance of the other applications in the geographic location; and ranking the applications in accordance with the metrics indicative of the performance of the applications in the geographic location. | 11-01-2012 |