Tois
Eva Tois, Espoo FI
Patent application number | Description | Published |
---|---|---|
20110104906 | METHOD OF GROWING OXIDE THIN FILMS - Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO | 05-05-2011 |
20130183445 | ENHANCED THIN FILM DEPOSITION - Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties. | 07-18-2013 |
Eva Tois, Helsinki FI
Patent application number | Description | Published |
---|---|---|
20120302055 | DEPOSITION AND REDUCTION OF MIXED METAL OXIDE THIN FILMS - In one aspect, methods of forming mixed metal thin films comprising at least two different metals are provided. In some embodiments, a mixed metal oxide thin film is formed by atomic layer deposition and subsequently reduced to a mixed metal thin film. Reduction may take place, for example, in a hydrogen atmosphere. The presence of two or more metals in the mixed metal oxide allows for reduction at a lower reduction temperature than the reduction temperature of the individual oxides of the metals in the mixed metal oxide film. | 11-29-2012 |
20150217330 | SELECTIVE DEPOSITION OF METALS, METAL OXIDES, AND DIELECTRICS - Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material. | 08-06-2015 |
Eva Tois, Almere NL
Patent application number | Description | Published |
---|---|---|
20150299848 | DUAL SELECTIVE DEPOSITION - Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials. | 10-22-2015 |
Eva E. Tois, Espoo FI
Patent application number | Description | Published |
---|---|---|
20120269962 | PROCESS FOR PASSIVATING DIELECTRIC FILMS - Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer. | 10-25-2012 |
Eva E. Tois, Helsinki FI
Patent application number | Description | Published |
---|---|---|
20120270393 | METAL SILICIDE, METAL GERMANIDE, METHODS FOR MAKING THE SAME - In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. | 10-25-2012 |
20130115768 | METHODS FOR DEPOSITING NICKEL FILMS AND FOR MAKING NICKEL SILICIDE AND NICKEL GERMANIDE - In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes. | 05-09-2013 |
Jan Tois, Espoo FI
Patent application number | Description | Published |
---|---|---|
20150274624 | PROCESS FOR THE PREPARATION OF OSPEMIFENE - The present invention is related to the process for the preparation ospemifene or (Z)-2-[4-(4-chloro-1,2-diphenyl-but-1-enyl)phenoxy]ethanol (I) and to intermediate compounds used in the process. | 10-01-2015 |