Patent application number | Description | Published |
20080245553 | INTERCONNECTION, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE - An interconnection includes a bundle of conductive members, each of the conductive members being made of carbon nanotube having an end connected to a first conductive film, and another end connected to a second conductive film separated from the first conductive film; and carbon particles each having a diamond crystal structure, dispersed between the conductive members. | 10-09-2008 |
20110050080 | ELECTRON EMISSION ELEMENT - According to the embodiment, an electron emission element includes a conductive substrate, a first diamond layer of a first conductivity type formed on the conductive substrate, and a second diamond layer of the first conductivity type formed on the first diamond layer. Thereby, it becomes possible to provide the electron emission element having a high electron emission amount and a high current density even in a low electric field at low temperature and the electron emission apparatus using this electron emission element. | 03-03-2011 |
20110057322 | CARBON NANOTUBE INTERCONNECT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a carbon nanotube interconnect includes a first interconnection layer, an interlayer dielectric film, a second interconnection layer, a contact hole, a plurality of carbon nanotubes and a film. The interlayer dielectric film is formed on the first interconnection layer. The second interconnection layer is formed on the interlayer dielectric film. The contact hole is formed in the interlayer dielectric film between the first interconnection layer and the second interconnection layer. The carbon nanotubes are formed in the contact hole. The carbon nanotubes have a first end connected to the first interconnection layer and a second end connected to the second interconnection layer. The film is formed between the interlayer dielectric film and the second interconnection layer. The film has a portion filled between the second ends of the carbon nanotubes. | 03-10-2011 |
20110233779 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes an interlayer insulation film provided on a substrate including a Cu wiring, a via hole formed in the interlayer insulation film on the Cu wiring, a first metal film selectively formed on the Cu wiring in the via hole, functioning as a barrier to the Cu wiring, and functioning as a promoter of carbon nanotube growth, a second metal film formed at least on the first metal film in the via hole, and functioning as a catalyst of the carbon nanotube growth, and carbon nanotubes buried in the via hole in which the first metal film and the second metal film are formed. | 09-29-2011 |
20110240111 | CARBON NANOTUBE ASSEMBLY, SOLAR CELL, WAVEGUIDE AND SUBSTRATE WITH THE SAME CARBON NANOTUBE ASSEMBLY - According to one embodiment, a carbon nanotube assembly includes a plurality of carbon nanotubes having a length of 10 μm or less in a major axis direction assembled with a space filling rate of 30% or more. | 10-06-2011 |
20120228614 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate. | 09-13-2012 |
20120327964 | ALGORITHM TO DRIVE SEMICONDUCTOR LASER DIODE - An algorithm to drive a semiconductor laser diode (LD) is disclosed. The algorithm assumes that the modulation current to keep the extinction ratio in constant has temperature dependence represented by an exponential function under the average output power of the LD is kept constant by an auto-power-control (APC). When a tracking error exists and the approximation by an exponential function is turned out in failure, the algorithm adds a correction to the exponential function determined by a difference between a practically measured modulation current and another modulation current calculated from a value determined for a bared LD. | 12-27-2012 |
20130217226 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer. | 08-22-2013 |
20130219697 | METHOD TO PRODUCE OPTICAL TRANSCEIVER - A method to control an optical transceiver, in particular, to drive an LD installed within the optical transceiver is described. The LD in the bias current thereof is determined by the automatic power control (APC) loop to keep an average of the optical output power. The modulation current is determined by a feedback loop to keep the extinction ratio (ER) in a preset range. The initial condition of the modulation current for the feedback loop is set by T-Im characteristic. The T-Im characteristic is first derived based on data measured in a status of the LD not installed in the transceiver. The T-Im characteristic is revised timely by the modulation current practically obtained for the optical transceiver. | 08-29-2013 |
20140231751 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device using multi-layered graphene wires includes a substrate having semiconductor elements formed therein, a first graphene wire formed above the substrate and including a multi-layered graphene layer having a preset impurity doped therein, a second graphene wire formed on the same layer as the first multi-layered graphene wire above the substrate and including a multi-layered graphene layer into which the preset impurity is not doped, a lower-layer contact connected to the undersurface side of the first multi-layered graphene wire, and an upper-layer contact connected to the upper surface side of the second multi-layered graphene wire. | 08-21-2014 |
20150035149 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a semiconductor device includes a semiconductor substrate provided with a lower interconnect layer formed thereon, and having a device region and a mark formation region, a CNT via structure formed in the device region such that it contacts the lower interconnect layer, a first mark formed in the mark formation region, formed by embedding carbon nanotubes, and formed in the same layer as the CNT via structure, a second mark formed in the mark formation region of the semiconductor substrate, formed with no carbon nanotubes, and formed in the same layer as the CNT via structure and the first mark, and an interconnect layer formed on the CNT via structure and the first and second marks, and electrically connected to the CNT via structure. | 02-05-2015 |
20150061131 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device in which CNTs are used for a contact via comprises a substrate includes a contact via groove, a catalyst layer for CNT growth which is formed at the bottom of the groove, and a CNT via formed by filling the CNTs into the groove in which the catalyst layer is formed. Each of the CNTs is formed by stacking a plurality of graphene layers in a state in which they are inclined depthwise with respect to the groove, and formed such that ends of the graphene layers are exposed on a sidewall of the CNT. Further, the CNT is doped with at least one element from the sidewall of the CNT. | 03-05-2015 |
20150061133 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, a semiconductor device using a graphene film comprises a catalytic metal layer formed on a groundwork substrate includes a contact via, and a multilayered graphene layer formed in a direction parallel with a surface of the substrate. The catalytic metal layer is formed to be connected to the contact via and covered with an insulation film except one side surface. The multilayered graphene layer is grown from the side surface of the catalytic metal layer which is not covered with the insulation film. | 03-05-2015 |
Patent application number | Description | Published |
20080203885 | THERMAL-ELECTRON SOURCE - A thermal-electron source includes a substrate; and a thermionic cathode having conductivity, and being provided on the substrate, and including a plurality of microscopic pores on a surface of the thermionic cathode. | 08-28-2008 |
20080218077 | DISCHARGE LIGHT-EMITTING DEVICE - A discharge light-emitting device includes a chamber that encapsulates a discharge gas and has a light permeable portion; and at least a pair of electrodes that are arranged in the chamber and are made of a wide-gap semiconductor, wherein the pair of electrodes are connected to each other and at least a portion where the electrodes are connected to each other is formed into a narrow portion. | 09-11-2008 |
20080238296 | ELECTRON-EMITTING DEVICE AND DISPLAY APPARATUS - An electron-emitting device includes a first electrode; an insulating film that is disposed on the first electrode, includes at least one step in an upper surface thereof, and includes a first surface on a lower step portion of the step and a second surface on an upper step portion of the step; a second electrode that is disposed on the first surface at a distance apart from the step; and a third electrode that is disposed on the second surface at a distance apart from the step. | 10-02-2008 |
20100072054 | CARBON NANOTUBE MANUFACTURING APPARATUS, CARBON NANOTUBE MANUFACTURING METHOD, AND RADICAL PRODUCING APPARATUS - A carbon nanotube manufacturing apparatus includes a plasma generating unit that generates plasma including ions, radicals, and electrons, from gas; a carbon nanotube manufacturing unit that manufactures carbon nanotubes from the radicals; a shielding electrode unit that is provided between the plasma generating unit and the carbon nanotube manufacturing unit and prevents the ions and the electrons from entering the carbon nanotube manufacturing unit; and a bias applying unit that applies a voltage to the shielding electrode unit, wherein the shielding electrode unit includes at least two first shielding electrodes that are arranged one above another, each of the first shielding electrodes having at least one opening. | 03-25-2010 |
20100209704 | CARBON NANOTUBE GROWING PROCESS, AND CARBON NANOTUBE BUNDLE FORMED SUBSTRATE - In the growth of carbon nanotubes, the aggregation of catalytic fine particles therefor is a problem. In order to realize the growth of carbon nanotubes into a high density, the carbon nanotube growing process includes a first plasma treatment step of treating a surface having catalytic fine particles with a plasma species generated from a gas which contains at least hydrogen or a rare gas without carbon element, a second plasma treatment step of forming a carbon layer on the surface of the catalytic fine particles by a plasma generated from a gas which contains at least a hydrocarbon after the first plasma treatment step, and a carbon nanotube growing step of growing carbon nanotubes by use of a plasma generated from a gas which contains at least a hydrocarbon after the second plasma treatment step. | 08-19-2010 |
20110147177 | STRUCTURE, ELECTRONIC DEVICE, AND METHOD FOR FABRICATING A STRUCTURE - A structure includes a conductive film ( | 06-23-2011 |
20120068160 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device according to an embodiment, includes a catalytic metal film, a graphene film, a contact plug, and an adjustment film. The catalytic metal film is formed above a substrate. The graphene film is formed on the catalytic metal film. The contact plug is connected to the graphene film. The adjustment film is formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level. | 03-22-2012 |
20130075757 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device according to the present embodiment includes a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of <011> ±10 degrees, and an n-type diamond semiconductor layer containing phosphorus (P) and formed above the surface plane described above. | 03-28-2013 |
20130075929 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film. | 03-28-2013 |
20130134592 | WIRE AND SEMICONDUCTOR DEVICE - A wire of an embodiment includes: a substrate; a metal film provided on the substrate; a metal part provided on the metal film; and graphene wires formed on the metal part, wherein the graphene wire is electrically connected to the metal film, and the metal film and the metal part are formed using different metals or alloys from each other. | 05-30-2013 |
20130249093 | CONDUCTIVE FILM AND SEMICONDUCTOR DEVICE - A conductive film of an embodiment includes: a fine catalytic metal particle as a junction and a graphene extending in a network form from the junction. | 09-26-2013 |
20140117548 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles. | 05-01-2014 |
20140145210 | SEMICONDUCTOR DEVICE - A semiconductor device according to an embodiment includes: a first diamond semiconductor layer of a first conductivity type including a main surface having a first plane orientation; a trench structure formed in the first diamond semiconductor layer; a second diamond semiconductor layer formed on the first diamond semiconductor layer in the trench structure and having a lower dopant concentration than the first diamond semiconductor layer; a third diamond semiconductor layer of a second conductivity type formed on the second diamond semiconductor layer and having a higher dopant concentration than the second diamond semiconductor layer; a first electrode electrically connected to the first diamond semiconductor layer; and a second electrode electrically connected to the third diamond semiconductor layer. | 05-29-2014 |
20140187033 | METHOD OF MANUFACTURING INTERCONNECTION AND SEMICONDUCTOR DEVICE - A method of manufacturing an interconnection of an embodiment includes: forming a via which penetrates an interlayer insulation film on a substrate; forming an underlying film in the via; removing the underlying film on a bottom part of the via; forming a catalyst metal inactivation film on the underlying film; removing the inactivation film on the bottom part of the via; forming a catalyst metal film on the bottom part of the via on which the inactivation film is removed; performing a first plasma treatment and a second plasma treatment using a gas not containing carbon on a member in which the catalyst metal film is formed; forming a graphite layer on the catalyst film after the first and second plasma treatment processes; and causing a growth of a carbon nanotube from the catalyst film on which the graphite layer is formed. | 07-03-2014 |
20140284798 | GRAPHENE WIRING AND METHOD OF MANUFACTURING THE SAME - A graphene wiring has a substrate a catalyst layer on the substrate a first graphene sheet layer on the catalyst layer and a second graphene sheet layer on the first graphene layer. The second graphene layer comprises multilayer graphene sheets. The multilayer graphene sheets are intercalated with an atomic or molecular species. | 09-25-2014 |
20140284799 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a substrate a lower layer wiring on the substrate, an interlayer dielectric on the lower layer wiring having a contact hole, a catalyst metal layer at the bottom of the contact hole having catalyst metal particles, multi-walled carbon nanotubes on the catalyst metal layer passing through the contact hole, and an upper layer wiring on the multi-walled carbon nanotubes. The multi-walled carbon nanotubes are intercalated with an atomic or molecular species. | 09-25-2014 |
20140284800 | GRAPHENE WIRING - A graphene wiring has a substrate, a catalyst layer on the substrate, a graphene layer on the catalyst layer, and a dopant layer on a side surface of the graphene layer. An atomic or molecular species is intercalated in the graphene layer or disposed on the graphene layer. | 09-25-2014 |
20150194386 | CONDUCTIVE FILM AND SEMICONDUCTOR DEVICE - A conductive film of an embodiment includes: a fine catalytic metal particle as a junction and a graphene extending in a network form from the junction. | 07-09-2015 |