Jong Kuk
Jong Kuk Choi, Daejeon KR
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20140114001 | GLASS FIBER-REINFORCED POLYCARBONATE FLAME-RETARDANT RESIN COMPOSITION - Disclosed is a glass fiber-reinforced polycarbonate flame-retardant resin composition which comprises (A) 50 to 75% by weight of polycarbonate having a melt index of 22 g/10 min or more (300° C., 1.2 kg), (B) 3 to 15% by weight of a rubber-modified styrene-based graft copolymer, (C) 3 to 10% by weight of a bulk copolymer of an aromatic vinyl compound and a vinyl cyan compound, (D) 1 to 10% by weight of an ethylene acrylate-based copolymer, (E) 10 to 25% by weight of glass fiber, and (F) 5 to 20% by weight of an aromatic phosphate ester-based compound, and thus advantageously exhibits superior flowability, flame retardancy, hardness, impact resistance and appearance qualities. | 04-24-2014 |
Jong Kuk Kim, Suwon-Si KR
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20090085159 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes cylinder type bottom electrodes connected to a contact plug formed over a semiconductor substrate, and a supporting pattern formed between the cylinder type bottom electrodes, wherein a portion of sidewalls of the bottom electrodes is higher than the supporting pattern and the other portion of the sidewalls of the bottom electrode is lower than the supporting pattern. | 04-02-2009 |
20090286380 | Method for Manufacturing Semiconductor Device - A method for manufacturing a semiconductor device includes forming an oxide film uniformly in a trench in the device isolation by, for example, a radical oxidation process. The method also includes increasing the thickness of the oxide film positioned at recess sidewalls by forming a gate oxide film. Manufacturing the device according to this method will prevent junction leakage and maintain a gate oxidation intensity characteristic that will improve the refresh characteristic of the device. | 11-19-2009 |
20100213617 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes cylinder type bottom electrodes connected to a contact plug formed over a semiconductor substrate, and a supporting pattern formed between the cylinder type bottom electrodes, wherein a portion of sidewalls of the bottom electrodes is higher than the supporting pattern and the other portion of the sidewalls of the bottom electrode is lower than the supporting pattern. | 08-26-2010 |
Jong Kuk Kim, Gyeongsangnam-Do KR
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20110100458 | Multi-layer thin film for encapsulation and method thereof - A multi-layer thin film for encapsulation and the method thereof are provided. The multi-layer thin film for encapsulation includes a protective layer composed of aluminum oxide, a single or double barrier layer composed of silicon nitride (SiN | 05-05-2011 |
20110108116 | P-type NiO conducting film for organic solar cell, a method for preparation of NiO conducting film, and an organic solar cell with enhanced light-to-electric energy conversion using the same - A p-type NiO conducting film for an organic solar cell, a preparation method thereof, and an organic solar cell using the same and having enhanced power conversion efficiency, are provided, wherein the NiO conducting film is fabricated by vacuum sputtering in which nickel or nickel oxide is used as a target material, and argon, oxygen or the mixed gas of the argon and the oxygen is supplied. The p-type NiO conducting film may be easily prepared by vacuum sputtering, and since a n-type conducting film is prepared by simply coating sol-phase precursor solution, the NiO conducting film and the organic solar cells having the NiO conducting film in the order of the NiO conducting film, a photoactive layer, and a n-type conducting film, have enhanced electric energy conversion. As a result, the provided disclosure is useful particularly when applied in organic solar cells and organic light emitting devices. | 05-12-2011 |
20140000943 | METHOD OF MANUFACTURING A FLEXIBLE SUBSTRATE HAVING METAL WIRING EMBEDDED THEREIN,AND FLEXIBLE SUBSTRATE MANUFACTURED BY THE METHOD | 01-02-2014 |
20140034364 | METHODS OF MANUFACTURING METAL WIRING BURIED FLEXIBLE SUBSTRATE BY USING PLASMA AND FLEXIBLE SUBSTRATES MANUFACTURED BY THE SAME - Disclosed are methods or manufacturing a metal wiring buried flexible substrate by using plasma and flexible substrates manufactured by the same. The method includes pre-treating a substrate by irradiating the plasma on the surface of the substrate (Step 1), forming a metal wiring on the pre-treated substrate in Step 1 (Step 2), forming a metal wiring buried polymer layer by coating a curable polymer on the substrate including the metal wiring formed thereon in Step 2 and curing (Step 3), and separating the polymer layer formed in Step 3 from the substrate in Step 1 (Step 4), The metal wiring may be inserted into the flexible substrate, and the resistance of the wiring may be decreased. The metal wiring may be clearly separated from the substrate, and impurities on the substrate surface may be clearly removed. The flexible substrate may be easily separated by applying only physical force. | 02-06-2014 |
Jong Kuk Kim, Gyeonggi-Do KR
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20080200006 | Method for Forming Shallow Trench Isolation of Semiconductor Device - A method for forming a shallow trench isolation (STI) of a semiconductor device comprises forming a nitride film pattern over a semiconductor substrate having a defined lower structure, etching a predetermined thickness of the semiconductor substrate using the nitride film pattern as a mask to form a trench having a vertical sidewall in a portion of the substrate predetermined to be a device isolation region, performing a plasma treatment process on the sidewall of the trench to form a plasma oxide film, forming an oxide film over the resulting structure to fill the trench, and performing a planarization process over the resulting structure. | 08-21-2008 |
20090206448 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device that prevents the leaning of storage node when forming a capacitor having high capacitance includes a plurality of cylinder-shaped storage nodes formed over a semiconductor substrate; and support patterns formed to fix the storage nodes in the form of an ‘L’ or a ‘+’ when viewed from the top. This semiconductor device having support patterns in the form of an ‘L’ or a ‘+’ reduces stress on the storage nodes when subsequently forming a dielectric layer and plate nodes that prevents the capacitors from leaking. | 08-20-2009 |
Jong Kuk Kim, Seoul KR
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20140064123 | APPARATUS AND METHOD OF DISPLAYING STATUS OF WIRELESS NETWORK - A method for providing a status of a wireless network, including: receiving a wireless signal from an access point and status information of the access point; determining processing capacity information of the access point based on the status information of the access point; and displaying wireless network information with respect to the access point, the wireless network information including the processing capacity information of the access point and signal strength information of the received wireless signal. | 03-06-2014 |
Jong Kuk Lee, Daejeon KR
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20140153561 | NETWORK TESTING SYSTEM AND OPERATING METHOD THEREOF - A network testing system according to an exemplary embodiment of the present invention includes: a radio wave transmitting apparatus which transmits a standard wave including timing data; a first network testing apparatus which performs time synchronization based on the timing data at the time of receiving the standard wave and generates first timing information; and a second network testing apparatus which performs time synchronization based on the timing data at the time of receiving the standard wave, generates second timing information, and transmits a network test reply and the second timing information for network testing at the time of receiving a network test request and the first timing information from the first network testing apparatus to perform the network testing along with the first network testing apparatus. | 06-05-2014 |
Jong Kuk Lim, Seoul KR
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20080202195 | GOLD NANOPARTICLE-BASED pH SENSOR IN HIGHLY ALKALINE REGION BY SURFACE-ENHANCED RAMAN SCATTERING STUDY - Disclosed are a pH sensor for use in a highly alkaline region of pH >11 comprising citrate-reduced gold nanoparticles and a method for calibrating pH of a solution in highly alkaline regions, based on variation in surface-enhanced Raman scattering spectra (SERS). | 08-28-2008 |
Jong-Kuk Hong, Suwon-Si KR
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20090038837 | Multilayered printed circuit board and manufacturing method thereof - A multilayered printed circuit board is disclosed. A method of manufacturing the multilayered printed circuit board, which includes: forming a metal layer and a lower-circuit-forming pattern in order on a carrier, and forming a lower circuit by filling a conductive material in the lower-circuit-forming pattern; removing the lower-circuit-forming pattern, stacking an insulation resin, and forming at least one via hole connecting with the lower circuit; forming at least one inner circuit and at least one interlayer connector connecting the inner circuit with the lower circuit on the insulation resin, to form a pair of circuit parts; and aligning the pair of circuit parts, attaching the pair of circuit parts to each other, and removing the carrier and the metal layer, allows the forming of fine-lined circuits and provides a thin board, while preventing bending and warpage in the board. | 02-12-2009 |
20090073670 | Multilayered printed circuit board and fabricating method thereof - A multilayered printed circuit board and a fabricating method thereof are disclosed. A method that includes repeating processes of forming at least one circuit pattern, and at least one insulation layer that covers the circuit pattern, over a carrier and interconnecting circuit patterns on different layers with vias; stacking a metal stiffener over the insulation layer; repeating processes of forming at least one insulation layer and at least one circuit pattern over the stiffener and interconnecting circuit patterns on different layers with vias; and removing the carrier, can be used to reduce warpage in the board and improve workability. | 03-19-2009 |
20090084494 | Substrate manufacturing method - A substrate manufacturing method is disclosed. A substrate manufacturing method, comprising: providing a support body on which a first separation layer is formed; forming a second separation layer on the first separation layer; forming an adhesion layer which covers the first separation layer and the second separation layer; forming a circuit stack body on the adhesion layer; cutting the circuit stack body, the adhesion layer and the second separation layer to a pre-determined shape; and forming a circuit stack unit by separating the second layer from the first layer, provides easy separation of the circuit stack pattern, which formed on the support body, from the support body and reduced manufacturing cost by reducing number of process and required materials for manufacturing coreless thin substrate. | 04-02-2009 |
20090169837 | Package substrate and manufacturing method thereof - A package substrate and a method of manufacturing the package substrate are disclosed. The method of manufacturing the package substrate may include stacking a second metal layer in which at least one hole is formed over a first metal layer, stacking a barrier layer over the first metal layer exposed in the hole and over the second metal layer, forming at least one bump by filling the hole with a conductive metal, stacking an insulation layer over the bump and forming a circuit pattern over the insulation layer, and removing the first metal layer, the second metal layer, and the barrier layer. | 07-02-2009 |
20090236125 | Multi-layer board and manufacturing method thereof - A method of manufacturing a multi-layer board is disclosed. The method may include forming a detachable separation layer over a support; forming a first solder resist layer over the separation layer; stacking a metal foil over the first solder resist layer; forming a circuit pattern over the metal foil; forming an insulation part over the first solder resist layer such that the circuit pattern is covered; forming a second solder resist layer over the insulation part; and separating a circuit stack unit, which includes the first solder resist layer, the metal foil, the circuit pattern, the insulation part, and the second solder resist layer, from the support by disconnecting the separation layer and the support. This method uses a simple process to reduce manufacture costs and shorten manufacture times. | 09-24-2009 |
Jong-Kuk Kim, Changwon-Si KR
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20090017087 | Osseoinductive metal implants for a living body and producing method thereof - This invention provides an Osseo-inductive metal implant for a living body and the producing method thereof and, more particularly, the Osseo-inductive metal implant for a living body according to the present invention is produced by forming, on the surface of the metal implant, the layer of metal oxide and the layer of bio-active material injected. | 01-15-2009 |
Jong-Kuk Lee, Daejeon-Si KR
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20090059926 | Method for determining transmission path of router system - Disclosed is a method for determining a transmission path of a router system, in which a forwarding table of the router system is managed with a dualized address system including an absolute address indicating a physical port and a relative address indicating the place of the absolute address. Only the absolute address in a relative forwarding table can be changed without changing the relative address when traffic congestion occurs on a certain port of the router system or when load-balancing is needed, so that the router can actively cope with a real-time change of a destination address. | 03-05-2009 |
20130111340 | APPARATUS AND METHOD FOR PROCESSING ELECTRONIC DOCUMENT | 05-02-2013 |