Patent application number | Description | Published |
20080294177 | METHODS AND DEVICES FOR TERMINATION - Devices and methods used in termination of a tissue tightening procedure are described. Termination includes the cinching of a tether to tighten the tissue, locking the tether to maintain tension, and cutting excess tether. In procedures involving anchors secured to the tissue, the tether is coupled to the anchors and the tissue is tightened via tension applied to the anchors by cinching the tether. In general, the devices and methods can be used in minimally invasive surgical procedures, and can be applied through small incisions or intravascularly. A method for tightening tissue by fixedly coupling a first anchor to a tether and slidably coupling a second anchor to the tether, securing both anchors to the tissue, applying tension to the tether intravascularly, fixedly coupling the tether to the second anchor, and cutting the tether is described. The tissue to be tightened can comprise heart tissue, in particular heart valve annulus tissue. Various devices and methods for locking the tether in place and cutting excess tether are described. | 11-27-2008 |
20090198272 | METHOD AND APPARATUS FOR ARTICULATING THE WRIST OF A LAPAROSCOPIC GRASPING INSTRUMENT - A medical instrument has a set of opposing jaws that can be articulated, both left and right, from centerline. The instrument has a proper bend radius and support for the jaw actuation member and cutter driving member. The bendable support for the drive members comprises tightly wound coil springs. Another embodiment of the invention controls the degree of articulation at the handle of the laparoscopic instrument. A further embodiment of the invention incorporates a locking mechanism to prevent motion of the wrist while the user performs other operations on the device. The locking mechanism also includes an indexing feature with which the user can index and choose the necessary amount of angle between preset angles. | 08-06-2009 |
20100049213 | DEVICES AND METHODS FOR TERMINATION - Devices and methods for locking and/or cutting tethers during a tissue modification procedure are described. In some variations, a tether may be used to tighten or compress tissue by bringing two pieces or sections of the tissue together. The tether, which may be under tension, may be locked to maintain the tension, and excess tether may be severed, using one or more of the devices and/or methods. The devices and/or methods may be used, for example, in minimally invasive procedures. | 02-25-2010 |
20100094314 | TETHER TENSIONING DEVICES AND RELATED METHODS - Devices, methods, and kits for tensioning tethers during a tissue modification procedure are described. In some variations, a tether coupled to anchors embedded in tissue may be tensioned to provide a cinching effect that tightens or compresses the tissue by bringing two pieces or sections of the tissue together. In certain variations, the tether may then be locked (e.g., to maintain the tension), and/or excess tether may be severed. The devices, methods, and/or kits may be used, for example, in minimally invasive procedures. | 04-15-2010 |
20100121349 | TERMINATION DEVICES AND RELATED METHODS - Devices and methods for locking and/or cutting tethers during a tissue modification procedure are described. In some variations, a tether may be used to tighten tissue by bringing two pieces or sections of the tissue together. The tether, which may be under tension, may be locked to maintain the tension, and excess tether may be severed, using one or more of the devices and/or methods. The devices and/or methods may be used, for example, in minimally invasive procedures. | 05-13-2010 |
20110230875 | ARTICULABLE ELECTROSURGICAL INSTRUMENT WITH A STABILIZABLE ARTICULATION ACTUATOR - Embodiments of the technology provide an articulable electrosurgical instrument and methods of performing electrosurgery with an articulating capability. The electrosurgical instrument includes an elongated shaft having an end effector associated with a distal end thereof that is able to deliver energy to a target tissue site. An articulable joint is positioned between that shaft and the end effector. Articulation of the articulable joint is controlled by a stabilizable articulation actuator, which may include a rotatably stabilizable disk residing within a well. The end effector may take the form of forceps including an upper and a lower jaw; the jaws are configured to grasp target tissue and to deliver energy, such as radiofrequency energy. In some of these instruments, the end effector is adapted to seal tissue by the application of radiofrequency energy, and then to cut through the sealed tissue portion. | 09-22-2011 |
20130231534 | FLOATING, MULTI-LUMEN-CATHETER RETRACTOR SYSTEM FOR A MINIMALLY-INVASIVE, OPERATIVE GASTROINTESTINAL TREATMENT - Improved methods and devices for performing an endoscopic surgery are provided. Systems are taught for operatively treating gastrointestinal disorders endoscopically in a stable, yet dynamic operative environment, and in a minimally-invasive manner. Such systems include, for example, an endoscopic surgical suite. The surgical suite can have a reversibly-expandable retractor that expands to provide a stable, operative environment within a subject. The expansion can be asymmetric around a stabilizer subsystem to maximize space for a tool and an endoscope to each be maneuvered independently to visualize a target tissue and treat the target tissue from outside the patient in a minimally invasive manner. | 09-05-2013 |
20130274553 | MULTI-LUMEN-CATHETER RETRACTOR SYSTEM FOR A MINIMALLY-INVASIVE, OPERATIVE GASTROINTESTINAL TREATMENT - Improved methods and devices for performing an endoscopic surgery are provided. Systems are taught for operatively treating gastrointestinal disorders endoscopically in a stable, yet dynamic operative environment, and in a minimally-invasive manner. Such systems include, for example, an endoscopic surgical suite. The surgical suite can have a reversibly-expandable retractor that expands to provide a stable, operative environment within a subject. The expansion can be asymmetric around a stabilizer subsystem to maximize space for a tool and an endoscope to each be maneuvered independently to visualize a target tissue and treat the target tissue from outside the patient in a minimally invasive manner. | 10-17-2013 |
20130304093 | DEVICES AND METHODS FOR TERMINATION - Devices and methods for locking and/or cutting tethers during a tissue modification procedure are described. In some variations, a tether may be used to tighten or compress tissue by bringing two pieces or sections of the tissue together. The tether, which may be under tension, may be locked to maintain the tension, and excess tether may be severed, using one or more of the devices and/or methods. The devices and/or methods may be used, for example, in minimally invasive procedures. | 11-14-2013 |
20130345511 | FLOATING, MULTI-LUMEN-CATHETER RETRACTOR SYSTEM FOR A MINIMALLY-INVASIVE, OPERATIVE GASTROINTESTINAL TREATMENT - Improved methods and devices for performing an endoscopic surgery are provided. Systems are taught for operatively treating gastrointestinal disorders endoscopically in a stable, yet dynamic operative environment, and in a minimally-invasive manner. Such systems include, for example, an endoscopic surgical suite. The surgical suite can have a reversibly-expandable retractor that expands to provide a stable, operative environment within a subject. The expansion can be asymmetric around a stabilizer subsystem to maximize space for a tool and an endoscope to each be maneuvered independently to visualize a target tissue and treat the target tissue from outside the patient in a minimally invasive manner. | 12-26-2013 |
20130345519 | FLOATING, MULTI-LUMEN-CATHETER RETRACTOR SYSTEM FOR A MINIMALLY-INVASIVE, OPERATIVE GASTROINTESTINAL TREATMENT - Improved methods and devices for performing an endoscopic surgery are provided. Systems are taught for operatively treating gastrointestinal disorders endoscopically in a stable, yet dynamic operative environment, and in a minimally-invasive manner. Such systems include, for example, an endoscopic surgical suite. The surgical suite can have a reversibly-expandable retractor that expands to provide a stable, operative environment within a subject. The expansion can be asymmetric around a stabilizer subsystem to maximize space for a tool and an endoscope to each be maneuvered independently to visualize a target tissue and treat the target tissue from outside the patient in a minimally invasive manner. | 12-26-2013 |
20140142393 | MULTI-LUMEN-CATHETER RETRACTOR SYSTEM FOR A MINIMALLY-INVASIVE, OPERATIVE GASTROINTESTINAL TREATMENT - A system for performing minimally invasive procedures in a body lumen of a patient including a flexible catheter having a first lumen configured and dimensioned to receive an endoscope therethrough and a second lumen configured and dimensioned to receive a first flexible tube therethrough. The first flexible tube is movable through the second lumen and has a distal portion including a first curve extending in a first direction with respect to the longitudinal axis and a second curve extending in a second different direction with respect to the longitudinal axis. A retractor system is positioned at a distal portion of the catheter and is movable from a non-expanded insertion position to an expanded position forming an expanded cage to form a larger working space. The distal portion of the first flexible tube is movable within the expanded cage. | 05-22-2014 |
20140188140 | TERMINATION DEVICES AND RELATED METHODS - Devices and methods for locking and/or cutting tethers during a tissue modification procedure are described. In some variations, a tether may be used to tighten tissue by bringing two pieces or sections of the tissue together. The tether, which may be under tension, may be locked to maintain the tension, and excess tether may be severed, using one or more of the devices and/or methods. The devices and/or methods may be used, for example, in minimally invasive procedures. | 07-03-2014 |
20150025314 | ENDOLUMINAL SYSTEM AND METHOD FOR GASTROINTESTINAL TREATMENT - Improved methods and devices for performing an endoscopic surgery are provided. Systems are taught for operatively treating gastrointestinal disorders endoscopically in a stable, yet dynamic operative environment, and in a minimally-invasive manner. Such systems include, for example, an endoscopic surgical suite. The surgical suite can have a reversibly-expandable retractor that expands to provide a stable, operative environment within a subject. The expansion can be asymmetric around a stabilizer subsystem to maximize space for a tool and an endoscope to each be maneuvered independently to visualize a target tissue and treat the target tissue from outside the patient in a minimally invasive manner. | 01-22-2015 |
20150157192 | SYSTEM FOR A MINIMALLY-INVASIVE, OPERATIVE GASTROINTESTINAL TREATMENT - Improved methods and devices for performing an endoscopic surgery including a system for performing minimally invasive procedures including a flexible catheter having a first lumen, a first flexible tube positioned in the first lumen, and a second flexible tube positioned in the first lumen. The first lumen defines a first space configured and dimensioned to receive an endoscope. The first flexible tube and second flexible tube are fixed at a proximal portion and configured to float within the first lumen of the catheter. First and second flexible guides are slidably positioned within the first and second flexible tubes and dimensioned to receive a first instrument for axial movement therein, the first and second flexible guides movable to an angled position with respect to a longitudinal axis. A working space expanding system positioned at a distal portion of the flexible catheter, the working space expanding system movable from a non-expanded insertion position to an expanded position forming an expanded region to expand the working space within the body lumen. | 06-11-2015 |
20150209024 | MULTI-LUMEN-CATHETER RETRACTOR SYSTEM FOR A MINIMALLY-INVASIVE, OPERATIVE GASTROINTESTINAL TREATMENT - Improved methods and devices for performing an endoscopic surgery are provided. Systems are taught for operatively treating gastrointestinal disorders endoscopically in a stable, yet dynamic operative environment, and in a minimally-invasive manner. Such systems include, for example, an endoscopic surgical suite. The surgical suite can have a reversibly-expandable retractor that expands to provide a stable, operative environment within a subject. The expansion can be asymmetric around a stabilizer subsystem to maximize space for a tool and an endoscope to each be maneuvered independently to visualize a target tissue and treat the target tissue from outside the patient in a minimally invasive manner. | 07-30-2015 |
20150223798 | FLOATING, MULTI-LUMEN-CATHETER RETRACTOR SYSTEM FOR A MINIMALLY-INVASIVE, OPERATIVE GASTROINTESTINAL TREATMENT - Improved methods and devices for performing an endoscopic surgery are provided. Systems are taught for operatively treating gastrointestinal disorders endoscopically in a stable, yet dynamic operative environment, and in a minimally-invasive manner. Such systems include, for example, an endoscopic surgical suite. The surgical suite can have a reversibly-expandable retractor that expands to provide a stable, operative environment within a subject. The expansion can be asymmetric around a stabilizer subsystem to maximize space for a tool and an endoscope to each be maneuvered independently to visualize a target tissue and treat the target tissue from outside the patient in a minimally invasive manner. | 08-13-2015 |
Patent application number | Description | Published |
20090317958 | METHOD FOR FORMING MEMRISTOR MATERIAL AND ELECTRODE STRUCTURE WITH MEMRISTANCE - Ion Implantation is used to form the memristor material and electrode structure with memristance. First, numerous electron-rich element atoms are implanted into a layer made of transition metal or non-metal. Then, a treating process (such as annealing) is proceeded to expel some electron-rich element atoms away the layer. After that, some electron-rich element vacancy rich regions are formed inside the layer, and then a memristor material is formed. Significantly, the usage of ion implantation can precisely control and flexibly adjust the distribution of the implanted atoms, and then both the amount and distribution of these depleted regions can be effectively adjusted. Hence, the quality of the memristor material is improved. | 12-24-2009 |
20110095339 | Semiconductor device and method for manufacturing the same - A semiconductor device has at least two main carbon-rich regions and two additional carbon-rich regions. The main carbon-rich regions are separately located in a substrate so that a channel region is located between them. The additional carbon-rich regions are respectively located underneath the main carbon-rich regions. The carbon concentrations is higher in the main carbon-rich regions and lower in the additional carbon-rich regions, and optionally, the absolute value of a gradient of the carbon concentration of the bottom portion of the main carbon-rich regions is higher than the absolute value of a gradient of the carbon concentration of the additional carbon-rich regions. Therefore, the leakage current induced by a lattice mismatch effect at the carbon-rich and the carbon-free interface can be minimized. | 04-28-2011 |
20130026539 | REPLACEMENT SOURCE/DRAIN FINFET FABRICATION - A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor. | 01-31-2013 |
20130187207 | REPLACEMENT SOURCE/DRAIN FINFET FABRICATION - A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched to expose a first region of the fin. A portion of the first region is then doped with a dopant. | 07-25-2013 |
20140054679 | DOPING A NON-PLANAR SEMICONDUCTOR DEVICE - In doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. A first ion implant is performed in a region of the non-planar semiconductor body. The first ion implant has a first implant energy and a first implant angle. A second ion implant is performed in the same region of the non-planar semiconductor body. The second ion implant has a second implant energy and a second implant angle. The first implant energy may be different from the second implant energy. Additionally, the first implant angle may be different from the second implant angle. | 02-27-2014 |
20140097487 | PLASMA DOPING A NON-PLANAR SEMICONDUCTOR DEVICE - In plasma doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. The substrate having the non-planar semiconductor body may be placed into a chamber. A plasma may be formed in the chamber and the plasma may contain dopant ions. A first bias voltage may be generated to implant dopant ions into a region of the non-planar semiconductor body. A second bias voltage may be generated to implant dopant ions into the same region. In one example, the first bias voltage and the second bias voltage may be different. | 04-10-2014 |
20140175568 | REPLACEMENT SOURCE/DRAIN FINFET FABRICATION - A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor. | 06-26-2014 |
20150031181 | REPLACEMENT SOURCE/DRAIN FINFET FABRICATION - A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor. | 01-29-2015 |
Patent application number | Description | Published |
20110043939 | Magnetic Recording Media with Reliable Writability and Erasure - Methods and media structures are provided for increasing writability and reducing unintentional erasure of perpendicular magnetic recording media. Variable permeability is controlled within a thin soft underlayer (SUL) structure, independent of bulk SUL material properties such as magnetic moment (B | 02-24-2011 |
20120135274 | NON-HCP MAGNETIC LAYER - A magnetic film or layer includes a non-hexagonal close pack (non-hcp) structure. | 05-31-2012 |
20130052485 | RECORDING STACK WITH A DUAL CONTINUOUS LAYER - A perpendicular magnetic recording stack with a dual continuous layer and a method of manufacturing the same. The perpendicular magnetic recording stack includes a substrate, one or more magnetic granular recording layers, and a dual continuous layer having first and second continuous layers. The first continuous layer, disposed between the second continuous layer and the magnetic granular recording layers, has an intermediate lateral exchange coupling, which is higher than the lateral exchange coupling of the magnetic granular layers. The second continuous layer has a higher lateral exchange coupling than the first continuous layer. | 02-28-2013 |
20130280556 | MAGNETIC RECORDING MEDIA WITH SOFT MAGNETIC UNDERLAYERS - Provided herein, is an apparatus that includes a nonmagnetic substrate having a surface; and a plurality of overlying thin film layers forming a layer stack on the substrate surface. The layer stack includes a magnetically hard perpendicular magnetic recording layer structure and an underlying soft magnetic underlayer (SUL), wherein the sum of a magnetic thickness of the layer stack is a magnetic thickness of up to about 2 memu/cm̂2. | 10-24-2013 |
20140093746 | MAGNETIC SEED LAYER - An apparatus includes a disk substrate and a soft underlayer overlying the disk substrate. A magnetic seed layer overlies the soft underlayer, wherein the magnetic seed layer is formed by a hexagonal close-packed lattice material and has in-plane magnetic anisotropy. | 04-03-2014 |
20140313615 | APPARATUS COMPRISING MAGNETICALLY SOFT UNDERLAYER - Provided herein is an apparatus, including a magnetically soft underlayer (SUL); an interlayer stack overlying the SUL, wherein the interlayer stack comprises a seed layer of an fcc material; and a perpendicular magnetic recording layer overlying the interlayer stack, wherein a thickness of the SUL in combination with a distance of the SUL from the perpendicular recording layer is sufficient to orient a total magnetic field corresponding to a magnetic transducer head at an angle of about 45°. | 10-23-2014 |
Patent application number | Description | Published |
20090001959 | CURRENT MIRROR CIRCUIT HAVING DRAIN-SOURCE VOLTAGE CLAMP - A circuit and method for providing an output current that includes biasing an output transistor in accordance with a reference current to conduct the output current and further includes maintaining a voltage across the output transistor. One embodiment includes conducting a reference current through a diode-coupled first field-effect transistor (FET) and biasing a gate of a second FET matched to the diode-coupled first FET by a voltage equal to a gate voltage of the diode-coupled first FET. A current equal to the reference current is conducted through a third FET having a gate coupled to a drain of the second FET, the third FET matched to the second FET. | 01-01-2009 |
20090086547 | CIRCUIT FOR PERFORMING READ OPERATION IN NAND FLASH MEMORY AND METHOD THEREOF - A circuit for performing a read operation in a NAND flash memory is disclosed. The NAND flash memory includes an array of bit lines grouped into first group of bit lines and second group of bit lines. The circuit includes a plurality of pre-charging and reading circuitries connected at first end of the array of bit lines and a plurality of pre-charging circuitries connected at second end of the array of bit lines. The pre-charging and reading circuitries include a select circuit which selects one group from the first and the second group of bit lines; a first and a second circuit to pre-charge and read the selected group of bit lines from the first end. The plurality of pre-charging circuits include two select lines to select one group of bit lines, and a plurality of pre-charging transistors to pre-charge the selected group of bit lines from the second end. | 04-02-2009 |
20090102522 | POWER ON RESET CIRCUITRY - One or more embodiments of the present disclosure provide methods, devices, and systems for operating power on reset (POR) circuitry. One method embodiment includes providing a voltage to a POR circuit of the system, detecting when the voltage reaches a number of different trip levels, maintaining a count of the number of times an output signal of the POR circuit trips in response to a detected reaching of one of the number of different trip levels, and adjusting the trip level to be detected based at least partially on the count. | 04-23-2009 |
20090195301 | BAND-GAP REFERENCE VOLTAGE DETECTION CIRCUIT - Methods, devices, modules, and systems for a band-gap reference voltage detection circuit are provided. One embodiment for a band-gap reference voltage detection circuit includes a Brokaw cell having a band-gap reference voltage, and a circuit portion for indicating the magnitude of an input voltage signal with respect to the band-gap reference voltage. The input voltage is applied to transistor bases of the Brokaw cell. | 08-06-2009 |
20100202217 | NAND FLASH MEMORY PROGRAMMING - A method of charging a floating gate in a nonvolatile memory cell comprises bringing a substrate channel within the memory cell to a first voltage, bringing a control gate to a programming voltage, and floating the substrate channel voltage while the control gate is at the programming voltage. Memory devices include state machines or controllers operable to perform the described method, and operation of such a state machine, memory device, and information handling system are described. | 08-12-2010 |
20110280079 | NAND FLASH MEMORY PROGRAMMING - A method of charging a floating gate in a nonvolatile memory cell comprises bringing a substrate channel within the memory cell to a first voltage, bringing a control gate to a programming voltage, and floating the substrate channel voltage while the control gate is at the programming voltage. Memory devices include state machines or controllers operable to perform the described method, and operation of such a state machine, memory device, and information handling system are described. | 11-17-2011 |
20140022847 | NAND FLASH MEMORY PROGRAMMING - A method of charging a floating gate in a nonvolatile memory cell comprises bringing a substrate channel within the memory cell to a first voltage, bringing a control gate to a programming voltage, and floating the substrate channel voltage while the control gate is at the programming voltage. Memory devices include state machines or controllers operable to perform the described method, and operation of such a state machine, memory device, and information handling system are described. | 01-23-2014 |
Patent application number | Description | Published |
20120182164 | Signal Transmission between a Controller and an Optical Pickup Unit - An improved transmission protocol is used to transmit a signal between two components of an electronic device. The improved transmission protocol is configured to reduce the number of simultaneous channel transitions that occur when multiple signal channels are transmitted in parallel. Reducing the number of simultaneous channel transitions is beneficial because a signal that is subject to skew, distortion, or electromagnetic interference during transmission may have a shorter settling time when fewer channels undergo a transition simultaneously. When the protocol is used to transmit a signal from a controller to an optical pickup unit in an optical data storage system, the reduced settling times allow for a higher data transmission rate. | 07-19-2012 |
20120206430 | CIRCUITS FOR ELIMINATING GHOSTING PHENOMENA IN DISPLAY PANEL HAVING LIGHT EMITTERS - The present disclosure provides a circuit for discharging parasitic capacitance in a display panel with common-anode topology having a plurality of light emitters, as well as a circuit for charging parasitic capacitance in a display panel with common-cathode topology. In the common-cathode topology, the circuit includes a three-terminal device having a gate, a source, and a drain, wherein one of the source and the drain is electrically coupled to a common cathode of the light emitters, and a mechanism for controlling the three-terminal device, the mechanism being electrically coupled to the gate. Shortly after a previously selected light emitter is unselected, the mechanism turns on the three-terminal device to form a conductive path between the source and the drain. The mechanism turns off the three-terminal device after a voltage at the common cathode is increased to a predetermined voltage level or after a maximum period of time lapses. | 08-16-2012 |
20140139139 | APPARATUS AND METHOD FOR DRIVING LED DISPLAY PANEL - The present disclosure provides devices, circuits, and methods for driving an LED display panel, so as to ensure the delivery of equal global charge at minimum gray scale. In one example, the circuit of the present disclosure includes a current source, a detection module, and a measurement module. The current source is configured to generate a current signal for the LEDs. The detection module is configured to detect a forward voltage of the LEDs in response to a low current applied to the LEDs. The detection module is further configured to hold the detected forward voltage. The measurement module is configured to measure a time period for an anode voltage of the LEDs to rise to the detected forward voltage in response to a display current applied to the LEDs. | 05-22-2014 |
20150109281 | APPARATUS AND METHOD FOR DRIVING LED DISPLAY - An apparatus for driving LED display includes a plurality of phase locked loop circuits. Each of the phase locked loop circuits includes a divider configured to receive the voltage controlled output signal and generate the feedback signal, a memory configured to generate a modulation profile codes and a sigma delta block. The divider receives a randomized numbers so as to change a dividing ratio over a modulation period. The sigma delta block includes at least one sigma delta modulator and at least one gain block. The sigma delta block is configured to receive the modulation profile codes and generate the randomized numbers to the divider. Each of the at least one gain block is configured to generate a value that is multiplied to at least one of the at least one sigma delta modulator so as to change a spread spectrum modulation depth. | 04-23-2015 |
20150109284 | APPARATUS AND METHOD FOR DRIVING LED DISPLAY - The apparatus for driving LED display includes a system control unit having a synchronization signal generator configured to generate a synchronization start signal and a plurality of phase locked loop circuits. Each of the phase locked loop circuits includes a divider coupled to the voltage controlled oscillator and configured to change the sequence of dividing ratios over a modulation period, a sigma delta modulator configured to generate a sequence of random numbers to the divider, and a spread spectrum modulation depth controller coupled to the sigma delta modulator and configured to receive the synchronization start signal from the synchronization signal generator. Upon receipt of the synchronization start signal, the spread spectrum modulation depth controller starts a spread spectrum modulation. | 04-23-2015 |
20150123555 | LED DISPLAY SYSTEMS - An LED display system comprises an LED array and an LED driver circuit. An LED driver circuit comprises components including a phase lock loop, a pulse width modulation engine, a configuration register, a series of gain adjustable fast charge current sources, and a serial input/output interface. The components in this driver circuit may be integrated on a same chip. The LED array may be arranged in a common cathode configuration. | 05-07-2015 |
20150137705 | APPARATUS AND METHOD FOR DRIVING LED DISPLAY - This disclosure provides an output stage for a LED driver circuit. The output stage has an input module, a regulator module for maintaining a constant internal voltage, and an output module for generating output signals. | 05-21-2015 |
Patent application number | Description | Published |
20100149856 | Writing Memory Cells Exhibiting Threshold Switch Behavior - A memory cell exhibiting threshold switch behavior, such as a phase change memory, can be programmed in a way that eliminates the need for a separate post-programming verification cycle. In particular, a circuit can be used to apply the programming pulse to a cell in a way that determines whether the cell has reached the desired threshold voltage. If the cell has not reached the desired threshold voltage, it receives another programming pulse. If it has, it does not receive another programming pulse. Thus, by applying a voltage across the cell that never exceeds the threshold voltage of the cell, the need for a separate verification cycle can be eliminated in some embodiments. | 06-17-2010 |
20100149857 | Reading Threshold Switching Memory Cells - Using the voltage across a threshold switching cell to sense the state of the cell, rather than sensing current through the cell, may result in a faster read. In some embodiments, current consumption during reading of conductive states may be reduced by using a capacitor coupled across the cell. | 06-17-2010 |
20110149628 | Programming Phase Change Memories Using Ovonic Threshold Switches - A phase change memory using an ovonic threshold switch selection device may be programmed from one state to another by first turning on the ovonic threshold switch. After the voltage across the cell has fallen, the cell may then be biased to program the cell to the desired state. | 06-23-2011 |
20120026786 | WRITE OPERATION FOR PHASE CHANGE MEMORY - Embodiments disclosed herein may relate to controlling a discharge of a capacitive element coupled to a phase change memory cell to produce a specified state in the phase change memory cell. | 02-02-2012 |
20130044539 | APPARATUSES, DEVICES AND METHODS FOR SENSING A SNAPBACK EVENT IN A CIRCUIT - Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell. | 02-21-2013 |
20130235655 | VIA FORMATION FOR CROSS-POINT MEMORY - Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to form electrically conductive lines in a first electrode layer of the cross-point memory array device. | 09-12-2013 |
20140334237 | APPARATUSES, DEVICES AND METHODS FOR SENSING A SNAPBACK EVENT IN A CIRCUIT - Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell. | 11-13-2014 |
Patent application number | Description | Published |
20110031569 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS - A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element. | 02-10-2011 |
20110032644 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS - A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element. | 02-10-2011 |
20110141804 | METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORIES - A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The pinned layers are nonmagnetic layer-free and self-pinned. In some aspects, the magnetic junction is configured to allow the free and second pinned layers to be switched between stable magnetic states when write currents are passed therethrough. The magnetic junction has greater than two stable states. In other aspects, the magnetic junction includes at least third and fourth spacer layers, a second free layer therebetween, and a third pinned layer having a pinned layer magnetic moment, being nonmagnetic layer-free, and being coupled to the second pinned layer. The magnetic junction is configured to allow the free layers to be switched between stable magnetic states when write currents are passed therethrough. | 06-16-2011 |
20110273928 | METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MAGNETIC FIELD ALIGNED SPIN TRANSFER TORQUE RANDOM ACCESS MEMORY - A method and system for providing a magnetic memory are described. The method and system include providing magnetic storage cells, bit lines coupled with the magnetic storage cells, preset lines, and word lines coupled with the magnetic storage cells. Each magnetic storage cell includes magnetic element(s). The bit lines drive write current(s) through selected storage cell(s) of the magnetic storage cells to write to the selected storage cell(s). The preset lines drive preset current(s) in proximity to but not through the selected storage cell(s). The preset current(s) generate magnetic field(s) to orient the magnetic element(s) of the selected storage cell(s) in a direction. The word lines enable the selected storage cell(s) for writing. Either the bit lines reside between the preset lines and the storage cells or the preset lines reside between the storage cells and on a storage cell side of the bit lines. | 11-10-2011 |
20120012953 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING LAMINATED FREE LAYERS AND MEMORIES USING SUCH MAGNETIC ELEMENTS - A method and system for providing a magnetic substructure usable in a magnetic device, as well as a magnetic element and memory using the substructure are described. The magnetic substructure includes a plurality of ferromagnetic layers and a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are interleaved with the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are immiscible with and chemically stable with respect to the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are substantially free of a magnetically dead layer-producing interaction with the plurality of nonmagnetic layers. Further, the plurality of nonmagnetic layers induce a perpendicular anisotropy in the plurality of ferromagnetic layers. The magnetic substructure is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic substructure. | 01-19-2012 |
20120155156 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS - A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element. | 06-21-2012 |
20120168885 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC LAYERS HAVING INSERTION LAYERS FOR USE IN SPIN TRANSFER TORQUE MEMORIES - A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the pinned layer and the free layer includes a magnetic substructure. The magnetic substructure includes at least two magnetic layers interleaved with at least one insertion layer. Each insertion layer includes at least one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO. The magnetic layers are exchange coupled. | 07-05-2012 |
20120170357 | METHOD AND SYSTEM FOR PROVIDING MULTIPLE LOGIC CELLS IN A SINGLE STACK - A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a plurality of nonmagnetic spacer layers, and a plurality of free layers. The free layers are interleaved with the nonmagnetic spacer layers. A first nonmagnetic spacer layer of the nonmagnetic spacer layers is between the free layers and the pinned layer. Each of the free layers is configured to be switchable between stable magnetic states when a write current is passed through the magnetic junction. Each of the free layers has a critical switching current density. The critical switching current density of one of the free layers changes monotonically from the critical switching current density of an adjacent free layer. The adjacent free layer is between the pinned layer and the one of the plurality of free layers. | 07-05-2012 |
20120261776 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC LAYERS HAVING INSERTION LAYERS FOR USE IN SPIN TRANSFER TORQUE MEMORIES - A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. | 10-18-2012 |
20130154034 | METHOD AND SYSTEM FOR SETTING A PINNED LAYER IN A MAGNETIC TUNNELING JUNCTION - A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer. | 06-20-2013 |
20130154035 | METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING THERMALLY ASSISTED SWITCHING - A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers. | 06-20-2013 |
20130154036 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING IMPROVED CHARACTERISTICS - A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. | 06-20-2013 |
20140063921 | METHOD AND SYSTEM FOR PROVIDING INVERTED DUAL MAGNETIC TUNNELING JUNCTION ELEMENTS - A method and system for providing a magnetic junction residing on a substrate and usable in a magnetic device are described. The magnetic junction includes a first pinned layer, a first nonmagnetic spacer layer having a first thickness, a free layer, a second nonmagnetic spacer layer having a second thickness greater than the first thickness, and a second pinned layer. The first nonmagnetic spacer layer resides between the pinned layer and the free layer. The first pinned layer resides between the free layer and the substrate. The second nonmagnetic spacer layer is between the free layer and the second pinned layer. Further, the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. | 03-06-2014 |