Patent application number | Description | Published |
20100034230 | ARSENIC DOPED SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE - A semiconductor light emitting device includes: a substrate; a first clad layer formed above the substrate and made of AlGaInP mixed crystal of a first conductivity type; an active layer formed on the first clad layer and made of AlGaInP mixed crystal; and a second clad layer formed on the active layer and made of AlGaInP mixed crystal of a second conductivity type opposite to the first conductivity type, wherein the first clad layer and the second clad layer each have a band gap wider than a band gap of the active layer, and at least one of the active layer and the first and second clad layers is doped with arsenic at an impurity concentration level not changing the band gap. Carbon capturing is suppressed, and surface morphology is suppressed from being degraded. | 02-11-2010 |
20110095330 | OPTICAL SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR APPARATUS - A method for manufacturing a high quality optical semiconductor device includes: (a) preparing a growth substrate; (b) forming a semiconductor layer on the growth substrate; (c) forming a metal support made of copper on the semiconductor layer by plating; (d) separating the growth substrate from the semiconductor layer to remove the growth substrate; and (e) carrying out a thermal treatment in order to even density distributions of crystal grains and voids in the copper forming the metal support. | 04-28-2011 |
20110104835 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENTS - A method of manufacturing semiconductor light emitting elements with improved yield and emission power uses laser lift-off and comprises the steps of forming a semiconductor grown layer formed of a first semiconductor layer, an active layer, and a second semiconductor layer on a first principal surface of a growth substrate; forming a plurality of junction electrodes apart on the second semiconductor layer and forming guide grooves arranged in a lattice to surround each of the junction electrodes in the second semiconductor layer; joining together a support and the semiconductor grown layer via the junction electrodes; projecting a laser to separate the growth substrate; dividing the semiconductor grown layer into respective element regions for the semiconductor light emitting elements; and cutting the support, thereby separating into the semiconductor light emitting elements. Removed regions include regions where the guide grooves are formed, and side walls of the second semiconductor layer formed by the guide grooves have a beveled shape at intersections of the guide grooves. | 05-05-2011 |
20120061715 | SEMICONDUCTOR LIGHT-EMITTING DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR LIGHT-EMITTING DEVICE - There is provided a semiconductor light-emitting device manufacturing method which includes the steps of forming a semiconductor growth film on a growth substrate; forming a metal film on the semiconductor growth film; forming a multilayer insulating film on the metal film, the multilayer insulating film having at least a first insulating layer and a second insulating layer adjacent to each other; and forming a support member on the multilayer insulating film. Pinholes present in the first insulating layer are discontinuous with pinholes present in the second insulating layer at an interface between the first and the second insulating layers. | 03-15-2012 |
20120146086 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device having an n-electrode and a p-electrode provided on the same surface side of a semiconductor film, wherein current spread in the semiconductor film is promoted, so that the improvements in luminous efficiency and reliability, the emission intensity uniformalization across the surface, and a reduction in the forward voltage, can be achieved. The semiconductor light emitting device includes a semiconductor film including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; the n-electrode formed on an exposed surface of the n-type semiconductor layer exposed by removing parts of the p-type semiconductor layer, of the active layer, and of the n-type semiconductor layer with accessing from the surface side of the p-type semiconductor layer; and the p-electrode. A current guide portion having conductivity higher than that of the n-type semiconductor layer is provided on or in the n-type semiconductor layer over the p-type electrode. | 06-14-2012 |
20120228670 | OPTICAL SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME - An optical semiconductor element and a manufacturing method thereof that can improve the light extraction efficiency with maintaining the yield. The manufacturing method includes forming a plurality of recesses arranged at equal intervals along a crystal axis of a semiconductor film in a surface of the semiconductor film; and performing an etching process on the surface of the semiconductor film, thereby forming a plurality of protrusions arranged according to the arrangement form of the plurality of recesses and deriving from the crystal structure of the semiconductor film in the surface of the semiconductor film. | 09-13-2012 |
20120306410 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND FLASH-LIGHT DEVICE - There is provided a light-emitting element which includes a first semiconductor layer, a second semiconductor layer having an electrical conductivity that is different from that of the first semiconductor layer and an active layer disposed between the first and second layers, and a first and second electrodes respectively disposed on surfaces of the first and second semiconductor layers. The first electrode comprises a plurality of electrode pieces separated from each other; and each of the electrode pieces comprises a power feed pad, and an extended portion connected to the pad and that extends in a direction away from the pad, and a terminal end portion of the extended portion of an electrode piece is opposed to a terminal end portion of the extended portion of the other electrode piece across a gap. | 12-06-2012 |
20130214321 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURING THE SAME, AND VEHICLE LIGHTING UNIT UTILIZING THE SAME - There is provided a highly reliable semiconductor light emitting element and vehicle lighting unit as well as associated methods. The semiconductor light emitting element can include a support substrate, a semiconductor stacked body including a first semiconductor layer of a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed on the active layer. The element can further include a bonding layer configured to bond the support substrate and the semiconductor stacked body, the bonding layer having a side surface that forms an angle exceeding 90° with a surface of the bonding layer on the side of the semiconductor stacked body, and an interconnection layer configured to extend from the upper surface of the semiconductor stacked body to cover the side surface of the bonding layer. | 08-22-2013 |
20140110738 | LIGHT EMITTING ELEMENT - A light emitting element includes a semiconductor structure layer, a reflective electrode layer formed on a part of the semiconductor structure layer, a conductor layer formed on the semiconductor structure layer with the reflective electrode layer embedded therein, and a support substrate that is arranged on the conductor layer and joined to the conductor layer via a junction layer. A high resistance contact surface is provided at an interface between the semiconductor structure layer and the conductor layer. A high resistance portion is arranged in an area opposed via the conductor layer to an area where the high resistance contact surface is provided. The conductor layer is connected to the junction layer in a peripheral area of the conductor layer outside the high resistance portion. | 04-24-2014 |