Patent application number | Description | Published |
20110235098 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - An image processing apparatus includes: a receiving unit that receives job data of plural pages; plural RIP processors that interpret and expand the job data into raster images; and an allocating unit that allocates the plural pages of the job data to the plural RIP processors for RIP processing, the allocating unit dividing the job data based on a predetermined data size regardless of page breaks, allocating job data that is to be RIP processed to the plural RIP processors, sending job data, corresponding to and after the pages of the data that is to be RIP processed, to the plural RIP processors, and when a head part of the job data that is to be RIP processed allocated by the allocating unit is in the middle of a page, the plural RIP processors RIP processing the job data from the beginning of the next page. | 09-29-2011 |
20130063454 | RENDERING DEVICE, NON-TRANSITORY COMPUTER READABLE MEDIUM, AND IMAGE OUTPUT APPARATUS - A rendering device includes a temporary memory, rendering processing units, and a rendering control unit. The temporary memory stores one or more rendering instructions and rendered results therefor in association. The rendering processing units perform rendering processing in accordance with a rendering instruction, store, when one or more similar rendering instructions exist for pages for which rendering processing was consecutively performed, the rendering instructions and rendered results therefor in association in the temporary memory, and read and use, when rendered results associated with one or more rendering instructions are stored, the rendered results. The rendering control unit performs control for assigning a rendering instruction to one of the rendering processing units and causing the rendering processing unit to perform rendering processing, calculates the usage rate of stored rendered results at a timing, and performs switching of an assigning method when the usage rate is lower than a threshold. | 03-14-2013 |
20130069959 | RENDERING DEVICE, NON-TRANSITORY COMPUTER READABLE MEDIUM, AND IMAGE OUTPUT APPARATUS - A rendering device includes a temporary memory, plural rendering processors, and a rendering controller. The temporary memory stores one or more rendering instructions and rendered results therefor in association with each other. The plural rendering processors each perform rendering processing in accordance with a rendering instruction, store the one or more rendering instructions and rendered results in association with each other in the temporary memory, when one or more similar rendering instructions exist for pages for which rendering processing was consecutively performed, and read and use the rendered results, in a case where rendered results associated with one or more rendering instructions are stored in the temporary memory. The rendering controller controls assigning a given rendering instruction to a corresponding one of the rendering processors in accordance with a given page editing instruction and causing the corresponding one of the rendering processors to perform rendering processing. | 03-21-2013 |
20140253936 | PRINT CONTROL DEVICE AND NON-TRANSITORY COMPUTER READABLE MEDIUM - A print control device includes a mark information memory, a first print controller, and a second print controller. The mark information memory stores mark information for each type of printer. Upon receiving a printing instruction that specifies a first printer, the first print controller assigns identification information to the print data, combines interpretation result data of the print data and an additional mark for the type of the first printer to create imposition data, supplies the imposition data to the first printer, and saves the interpretation result data in a storage device in association with the identification information. Upon receiving a printing instruction that specifies a second printer, the second print controller acquires the interpretation result data from the storage device, combines the interpretation result data and an additional mark for the type of the second printer to create imposition data, and supplies the imposition data to the second printer. | 09-11-2014 |
Patent application number | Description | Published |
20090039337 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element having a storage layer containing an ion source layer between a first electrode and a second electrode is provided. The memory element stores information by changing an electrical characteristic of the storage layer, wherein at least Zr is added to the ion source layer as a metal element together with an ion conducting material. | 02-12-2009 |
20100195371 | MEMORY ELEMENT AND MEMORY DEVICE - The capability of retaining a resistance value of a stored state and an erased state is improved in a resistance variation-type memory device. A memory layer | 08-05-2010 |
20100259967 | MEMORY CELL - A memory cell is provided, in which a resistance value is appropriately controlled, thereby a variable resistance element may be applied with a voltage necessary for changing the element into a high or low resistance state. A storage element | 10-14-2010 |
20110031466 | SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME - Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array. | 02-10-2011 |
20110140065 | MEMORY ELEMENT AND MEMORY DEVICE - The present invention provides a memory element and a memory device realizing reduced variations in resistance values in an initial state or erase state of a plurality of memory elements and capable of retaining the resistance value in a write/erase state for writing/erasing operations of a plurality of times. The memory element includes a first electrode, a memory layer, and a second electrode in order. The memory layer has: an ion source layer containing at least one of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and at least one metal element selected from copper (Cu), silver (Ag), zinc (Zn), and zirconium (Zr); and two or more high-resistance layers having a resistance value higher than that of the ion source layer and having different compositions. | 06-16-2011 |
20110155987 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is made of an oxide containing Te. Any of elements other than Te such as Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu, and Au may be added. In the case of adding Al to Te and also adding Cu and Zr, the composition ratio of the high-resistivity layer is preferably adjusted in the ranges of 30≦Te≦100 atomic %, 0≦Al≦70 atomic %, and 0≦Cu+Zr≦36 atomic % except for oxygen. The ion source layer is made of at least one kind of metal elements and at least one kind of chalcogen elements of Te, S, and Se. | 06-30-2011 |
20110155988 | MEMORY ELEMENT AND MEMORY DEVICE - Provided are a memory element and a memory device. A memory layer is provided with an ion source layer. The ion source layer includes Zr (zirconium), Cu (copper), and Al (aluminum) as a metal element together with an ion conductive material such as S (sulfur), Se (selenium), and Te (tellurium) (chalcogen element). The amount of Al in the ion source layer is 30 to 50 atomic percent. The amount of Zr is preferably 7.5 to 25 atomic percent, and more preferably, the composition ratio of Zr to the chalcogen element in total included in the ion source layer (=Zr (atomic percent)/chalcogen element in total (atomic percent)) falls within a range from 0.2 to 0.74. | 06-30-2011 |
20110194329 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 08-11-2011 |
20120218808 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device with improved repetition characteristics during operations at a low voltage and current. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and an ion source layer disposed on the second electrode side, and having a resistivity of 2.8 mΩcm or higher but lower than 1 Ωcm. | 08-30-2012 |
20120294063 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device excellently operating at a low current, and having the satisfactory retention characteristics. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and being in a single- or multi-layer structure including a layer containing a highest percentage of tellurium (Te) as an anionic component, and an ion source layer disposed on the second electrode side, and containing a metallic element and one or more chalcogen elements including tellurium (Te), sulfur (S), and selenium (Se) with aluminum (Al) of 27.7 atomic % or more but 47.4 atomic % or less. | 11-22-2012 |
20120314479 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer. | 12-13-2012 |
20130001496 | MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE - A memory element includes: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer containing one or more of metallic elements, and the ion source layer being provided on the second electrode side. The ion source layer includes a first ion source layer and a second ion source layer, the first ion source layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and being provided on the resistance change layer side, and the second ion source layer containing the chalcogen element with a content different from a content in the first ion source layer and being provided on the second electrode side. | 01-03-2013 |
20130001497 | MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE - A memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer. | 01-03-2013 |
20130240818 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 09-19-2013 |
20130256626 | SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME - Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array. | 10-03-2013 |
20140008600 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is made of an oxide containing Te. Any of elements other than Te such as Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu, and Au may be added. In the case of adding Al to Te and also adding Cu and Zr, the composition ratio of the high-resistivity layer is preferably adjusted in the ranges of 30≦Te≦100 atomic %, 0≦Al ≦70 atomic %, and 0≦Cu+Zr≦36 atomic % except for oxygen. The ion source layer is made of at least one kind of metal elements and at least one kind of chalcogen elements of Te, S, and Se. | 01-09-2014 |
20140183438 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 07-03-2014 |
20140376301 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer. | 12-25-2014 |
20150072499 | MEMORY ELEMENT WITH ION SOURCE LAYER AND MEMORY DEVICE - A method of making memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer. | 03-12-2015 |