Patent application number | Description | Published |
20090322211 | Light-Emitting Material, Light-Emitting Device, and Electronic Apparatus - It is an object to provide a light-emitting material that does not easily deteriorate. It is another object to provide a light-emitting device having superiority in reliability. It is found that a light-emitting material that has superiority in a carrier-transporting property and does not easily deteriorate can be obtained by introducing a substituent that makes oxygen to be not easily added to an anthracene derivative. By using such a light-emitting material, a light-emitting device having superiority in reliability can be obtained. | 12-31-2009 |
20100123130 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO | 05-20-2010 |
20110008233 | POSITIVE ELECTRODE ACTIVE MATERIAL - A highly effective positive electrode is obtained by using a material such as Na which is an inexpensive abundant resource. A positive electrode active material of sodium transition metal phosphate of olivine structure in which the sodium transition metal phosphate of olivine structure includes, a phosphorus atom that is located at the center of a tetrahedron having an oxygen atom in each vertex, a transition metal atom that is located at the center of a first octahedron having an oxygen atom in each vertex; and a sodium atom that is located at the center of a second octahedron having an oxygen atom in each vertex, and adjacent sodium atoms are arranged one-dimensionally in a <010> direction. | 01-13-2011 |
20110079778 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. The impurity concentration in the oxide semiconductor layer is reduced in the following manner: a silicon oxide layer including many defects typified by dangling bonds is formed in contact with the oxide semiconductor layer, and an impurity such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H | 04-07-2011 |
20110084264 | OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE - An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In | 04-14-2011 |
20110084267 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased. | 04-14-2011 |
20110084268 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed. | 04-14-2011 |
20110084273 | SEMICONDUCTOR DEVICE - One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or −30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours. | 04-14-2011 |
20110089416 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H | 04-21-2011 |
20110101335 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H | 05-05-2011 |
20110121289 | THIN FILM TRANSISTOR - A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal. | 05-26-2011 |
20110147739 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A single-component oxide semiconductor layer is formed over a substrate; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a single-component oxide semiconductor layer including single crystal regions is formed; and a multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions. | 06-23-2011 |
20110156026 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions. | 06-30-2011 |
20120001179 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device having a stacked-layer structure of a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer is provided, in which the nitrogen concentration of the oxide semiconductor layer is 2×10 | 01-05-2012 |
20120126212 | Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Devices - A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided. | 05-24-2012 |
20120132903 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor. | 05-31-2012 |
20120132907 | SEMICONDUCTOR FILM, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME - One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized. | 05-31-2012 |
20120138922 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided. | 06-07-2012 |
20120206035 | LIGHT-EMITTING ELEMENT - Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved. | 08-16-2012 |
20120228606 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions. | 09-13-2012 |
20120305913 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions. | 12-06-2012 |
20130020571 | SEMICONDUCTOR DEVICE - Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used. | 01-24-2013 |
20130062601 | OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE - An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In | 03-14-2013 |
20130069060 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO | 03-21-2013 |
20130105792 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | 05-02-2013 |
20130113044 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed. | 05-09-2013 |
20130140553 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film. | 06-06-2013 |
20130214273 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided. | 08-22-2013 |
20140056579 | ELECTRODE COVER AND EVAPORATION DEVICE - The present invention provides an evaporation device for which maintenance is readily conducted, and further, provides an electrode cover which can prevent an evaporation material from being adhered to electrodes. Moreover, the present invention provides an evaporation device including an evaporation chamber; a holding portion for holding an object to be treated; an evaporation source; an electrode; an electrode cover; and a power supply, in which the evaporation chamber includes the holding portion in an upper portion, and includes the evaporation source, the electrode, and the electrode cover in a lower portion; the electrode cover covers at least a part of an exposed surface of the electrode; the electrode and the power supply are electrically connected. | 02-27-2014 |
20140097428 | OXIDE SEMICONDUCTOR FILM, TRANSISTOR, AND SEMICONDUCTOR DEVICE - To provide an oxide semiconductor film which has high stability and does not easily cause variation in electric characteristics of a transistor, a transistor including the oxide semiconductor film in its channel formation region, and a highly reliable semiconductor device including the transistor. The oxide semiconductor film including indium includes a crystal part whose c-axis is substantially perpendicular to a surface of the oxide semiconductor film. In the crystal part, the length of a crystal arrangement part containing indium and oxygen on a plane perpendicular to the c-axis is more than 1.5 nm. Further, the semiconductor device includes the transistor including the oxide semiconductor film in its channel formation region. | 04-10-2014 |
20140110709 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO | 04-24-2014 |
20140124776 | METAL OXIDE FILM AND METHOD FOR FORMING METAL OXIDE FILM - A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ. | 05-08-2014 |
20140138683 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H | 05-22-2014 |
20140183532 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided. | 07-03-2014 |
20140193946 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions. | 07-10-2014 |
20140239298 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor. | 08-28-2014 |
20140284596 | OXIDE SEMICONDUCTOR - To provide an oxide semiconductor with a novel structure. Such an oxide semiconductor is composed of an aggregation of a plurality of InGaZnO | 09-25-2014 |
20140284601 | THIN FILM TRANSISTOR - A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal. | 09-25-2014 |
20140306220 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a novel semiconductor device in which a reduction in channel length is controlled. The semiconductor device includes an oxide semiconductor layer having a crystal part, and a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor layer. The oxide semiconductor layer includes a channel formation region and an n-type region in contact with the source electrode layer or the drain electrode layer. The crystal orientation of the crystal part is different between the channel formation region and the n-type region. | 10-16-2014 |
20140312345 | Semiconductor Device And Method For Manufacturing The Same - An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode. | 10-23-2014 |
20140353654 | Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Devices - A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided. | 12-04-2014 |
20140367682 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H | 12-18-2014 |
20140370706 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased. | 12-18-2014 |
20150034947 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - A crystalline oxide semiconductor film which can be used as a semiconductor film of a transistor or the like is provided. In particular, a crystalline oxide semiconductor film with less defects such as grain boundaries is provided. One embodiment of the present invention is a crystalline oxide semiconductor film which is provided over a substrate and has a region including five or less areas where a transmission electron diffraction pattern showing discontinuous points is observed when an observation area is changed one-dimensionally within a range of 700 nm, using a transmission electron diffraction apparatus with an electron beam having a probe diameter of 1 nm. | 02-05-2015 |
20150041801 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer, a gate electrode overlapping with the semiconductor layer, a first gate insulating layer between the semiconductor layer and the gate electrode, and a second gate insulating layer between the first gate insulating layer and the gate electrode. The first gate insulating layer includes an oxide in which the nitrogen content is lower than or equal to 5 at. %, and the second gate insulating layer includes charge trap states. | 02-12-2015 |
20150053971 | SEMICONDUCTOR DEVICE - In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×10 | 02-26-2015 |
20150079731 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H | 03-19-2015 |