Patent application number | Description | Published |
20080242810 | Use of a Combination Chain Transfer and Activating Agent to Control Molecular Weight and Optical Density of Pd Catalyzed Norbornene Polymers - A method of controlling the molecular weight of poly(cyclic) olefin (norbornene-type) polymers and activating the polymerization thereof with a single material is provided. Such method include adding a chain transfer/activating agent to a mixture of monomer(s), catalyst, solvent and an optional cocatalyst and polymerizing the mixture to form a polymer. It is shown that the amount of chain transfer/activating agent in the mixture can serve to control the molecular weight of the resulting polymer, its percent conversion or both, and in some embodiments the optical density of the resulting polymer. | 10-02-2008 |
20110009578 | Use Of A Combination Chain Transfer And Activating Agent To Control Molecular Weight And Optical Density Of Pd Catalyzed Norbornene Polymers - A method of controlling the molecular weight of poly(cyclic) olefin (norbornene-type) polymers and activating the polymerization thereof with a single material is provided. Such method include adding a chain transfer/activating agent to a mixture of monomer(s), catalyst, solvent and an optional cocatalyst and polymerizing the mixture to form a polymer. It is shown that the amount of chain transfer/activating agent in the mixture can serve to control the molecular weight of the resulting polymer, its percent conversion or both, and in some embodiments the optical density of the resulting polymer. | 01-13-2011 |
20110065878 | Norbornene-Type Polymers, Compositions Thereof And Lithographic Processes Using Such Compositions - Embodiments of the present invention relate generally to non-self imagable and imagable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and the immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming imaging layer and top-coat layers for overlying such imaging layers in immersion lithographic process and the process thereof. | 03-17-2011 |
20110104614 | Self-imageable film forming polymer, compositions thereof and devices and structures made therefrom - Embodiments in accordance with the present invention encompass self-imageable film forming compositions that comprise norbornene-type polymers and that can be formulated to be either positive tone imaging or negative tone. The films formed thereby are useful in the forming of microelectronic and optoelectronics devices. | 05-05-2011 |
20110244400 | Norbornene-Type Polymers, Compositions Thereof and Lithographic Process Using Such Compositions - Embodiments in accordance with the present invention provide for non-self imageable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming top-coat layers for overlying photoresist layers in immersion lithographic process and the process thereof. | 10-06-2011 |
20120056183 | GATE INSULATOR LAYER FOR ORGANIC ELECTRONIC DEVICES - Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers. | 03-08-2012 |
20120056249 | INTERLAYER FOR ELECTRONIC DEVICES - Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied to fluoropolymer layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin interlayers and processes for preparing such polycycloolefin interlayers and electronic devices. | 03-08-2012 |
20120129101 | Self-Imageable Film Forming Polymer, Compositions Thereof and Devices and Structures Made Therefrom - Polymers and compositions for forming self-imageable films encompassing such polymers that encompass norbornene-type repeating unit having at least one phenolic functionality and maleic anhydride-type repeating unit, which can be formulated to be either positive tone imaging or negative tone imaging. The films formed thereby are useful as self-imageable layers in the manufacture of microelectronic, such as semiconductor, and optoelectronic devices. | 05-24-2012 |
20130017488 | Self-Imageable Layer Forming Polymer and Compositions Thereof - Copolymers and compositions thereof useful for forming self-imageable films encompassing such copolymers are disclosed. Such copolymers encompass norbornene-type repeating units and maleic anhydride-type repeating units where at least some of such and maleic anhydride-type repeating units have been ring-opened. The films formed from such copolymer compositions provide self imageable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices. | 01-17-2013 |
20130323644 | NORBORNENE-TYPE POLYMERS, COMPOSITIONS THEREOF AND LITHOGRAPHIC PROCESS USING SUCH COMPOSITIONS - Embodiments in accordance with the present invention provide for non-self imagable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming top-coat layers for overlying photoresist layers in immersion lithographic process and the process thereof. | 12-05-2013 |
20140087293 | MALEIMIDE CONTAINING CYCLOOLEFINIC POLYMERS AND APPLICATIONS THEREOF - Various cycloolefinic/maleic anhydride polymers containing maleimide pendant groups and compositions thereof useful for forming self-imageable films encompassing such copolymers are disclosed. Such polymers encompass norbornene-type repeating units containing maleimide groups and maleic anhydride-type repeating units where at least some of such maleic anhydride-type repeating units have been ring-opened. The films formed from such copolymer compositions provide self imageable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices. | 03-27-2014 |
20140205948 | SELF-IMAGEABLE LAYER FORMING POLYMER AND COMPOSITIONS THEREOF - Copolymers and compositions thereof useful for forming self-imageable films encompassing such copolymers are disclosed. Such copolymers encompass norbornene-type repeating units and maleic anhydride-type repeating units where at least some of such and maleic anhydride-type repeating units have been ring-opened. The films formed from such copolymer compositions provide self imageable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices. | 07-24-2014 |
20150079506 | AMINE TREATED MALEIC ANHYDRIDE POLYMERS, COMPOSITIONS AND APPLICATIONS THEREOF - Disclosed herein are various amine treated maleic anhydride containing polymers and compositions thereof, which are useful for forming self-imageable films. In some embodiments, such polymers encompass norbornene-type repeating units and maleic anhydride-type repeating units where at least some of such maleic anhydride-type repeating units are either ring-opened or have been transformed into maleimide repeat units. The films formed from such copolymer compositions provide self imageable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices. | 03-19-2015 |
20150079507 | AMINE TREATED MALEIC ANHYDRIDE POLYMERS WITH PENDENT SILYL GROUP, COMPOSITIONS AND APPLICATIONS THEREOF - Disclosed herein are various amine treated maleic anhydride containing polymers and compositions thereof, which are useful for forming self-imageable films. In some embodiments, such polymers encompass norbornene-type repeating units containing pendent silyl groups and maleic anhydride-type repeating units where at least some of such maleic anhydride-type repeating units are either ring-opened or have been transformed into maleimide repeat units. The films formed from such copolymer compositions provide self imageable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices. | 03-19-2015 |
20150252132 | POLYMER, PHOTOSENSITIVE RESIN COMPOSITION AND ELECTRONIC DEVICE - There is provided a polymer including a structural unit represented by the following Formula (1a), a structural unit represented by the following Formula (1b) and a structural unit represented by the following Formula (1c) | 09-10-2015 |
20150349263 | INTERLAYER FOR ELECTRONIC DEVICES - Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied to fluoropolymer layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin interlayers and processes for preparing such polycycloolefin interlayers and electronic devices. | 12-03-2015 |
20150372246 | GATE INSULATOR LAYER FOR ORGANIC ELECTRONIC DEVICES - Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers. | 12-24-2015 |
Patent application number | Description | Published |
20120001339 | BUMPLESS BUILD-UP LAYER PACKAGE DESIGN WITH AN INTERPOSER - The present disclosure relates to the field of integrated circuit package design and, more particularly, to packages using a bumpless build-up layer (BBUL) designs. Embodiments of the present description relate to the field of fabricating microelectronic packages, wherein an interposer, such as a through-silicon via interposer, may be used in a bumpless build-up layer package to facilitate stacked microelectronic components. | 01-05-2012 |
20120074580 | METHODS OF FORMING FULLY EMBEDDED BUMPLESS BUILD-UP LAYER PACKAGES AND STRUCTURES FORMED THEREBY - Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include a die embedded in a coreless substrate, wherein a mold compound surrounds the die, and wherein the die comprises TSV connections on a first side and C | 03-29-2012 |
20130003319 | BUMPLESS BUILD-UP LAYER PACKAGE WARPAGE REDUCTION - The present disclosure relates to the field of fabricating microelectronic packages and the fabrication thereof, wherein a microelectronic device may be formed within a bumpless build-up layer coreless (BBUL-C) microelectronic package and wherein a warpage control structure may be disposed on a back surface of the microelectronic device. The warpage control structure may be a layered structure comprising at least one layer of high coefficient of thermal expansion material, including but not limited to a filled epoxy material, and at least one high elastic modulus material layer, such as a metal layer. | 01-03-2013 |
20130023088 | METHODS OF FORMING FULLY EMBEDDED BUMPLESS BUILD-UP LAYER PACKAGES AND STRUCTURES FORMED THEREBY - Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include a die embedded in a coreless substrate, wherein a mold compound surrounds the die, and wherein the die comprises TSV connections on a first side and C4 pads on a second side of the die, a dielectric material on a first side and on a second side of the mold compound; and interconnect structures coupled to the C4 pads and to the TSV pads. Embodiments further include forming packaging structures wherein multiple dies are fully embedded within a BBUL package without PoP lands. | 01-24-2013 |
20130270715 | PACKAGED SEMICONDUCTOR DIE WITH BUMPLESS DIE-PACKAGE INTERFACE FOR BUMPLESS BUILD-UP LAYER (BBUL) PACKAGES - A packaged semiconductor die with a bumpless die-package interface and methods of fabrication are described. For example, a semiconductor package includes a substrate having a land side with a lowermost layer of conductive vias. A semiconductor die is embedded in the substrate and has an uppermost layer of conductive lines, one of which is coupled directly to a conductive via of the lowermost layer of conductive vias of the substrate. In another example, a semiconductor package includes a substrate having a land side with a lowermost layer of conductive vias. A semiconductor die is embedded in the substrate and has an uppermost layer of conductive lines with a layer of conductive vias disposed thereon. At least one of the conductive lines is coupled directly to a conductive via of the semiconductor die which is coupled directly to a conductive via of the lowermost layer of conductive vias of the substrate. | 10-17-2013 |
20130270719 | MICROELECTRONIC PACKAGE AND STACKED MICROELECTRONIC ASSEMBLY AND COMPUTING SYSTEM CONTAINING SAME - A microelectronic package comprises a die ( | 10-17-2013 |
20130334696 | BUMPLESS BUILD-UP LAYER PACKAGE DESIGN WITH AN INTERPOSER - The present disclosure relates to the field of integrated circuit package design and, more particularly, to packages using a bumpless build-up layer (BBUL) designs. Embodiments of the present description relate to the field of fabricating microelectronic packages, wherein an interposer, such as a through-silicon via interposer, may be used in a bumpless build-up layer package to facilitate stacked microelectronic components. | 12-19-2013 |
20140001623 | MICROELECTRONIC STRUCTURE HAVING A MICROELECTRONIC DEVICE DISPOSED BETWEEN AN INTERPOSER AND A SUBSTRATE | 01-02-2014 |
20140239510 | BUMPLESS BUILD-UP LAYER PACKAGE WITH PRE-STACKED MICROELECTRONIC DEVICES - The present disclosure relates to the field of integrated circuit package design and, more particularly, to packages using a bumpless build-up layer (BBUL) designs. Embodiments of the present description relate to the field of fabricating microelectronic packages, wherein a first microelectronic device having through-silicon vias may be stacked with a second microelectronic device and used in a bumpless build-up layer package. | 08-28-2014 |
20140363929 | BUMPLESS BUILD-UP LAYER PACKAGE WARPAGE REDUCTION - The present disclosure relates to the field of fabricating microelectronic packages and the fabrication thereof, wherein a microelectronic device may be formed within a bumpless build-up layer coreless (BBUL-C) microelectronic package and wherein a warpage control structure may be disposed on a back surface of the microelectronic device. The warpage control structure may be a layered structure comprising at least one layer of high coefficient of thermal expansion material, including but not limited to a filled epoxy material, and at least one high elastic modulus material layer, such as a metal layer. | 12-11-2014 |
20150340312 | MICROELECTRONIC PACKAGE AND STACKED MICROELECTRONIC ASSEMBLY AND COMPUTING SYSTEM CONTAINING SAME - A microelectronic package comprises a die ( | 11-26-2015 |
20160133590 | Packaged Semiconductor Die with Bumpless Die-Package Interface for Bumpless Build-Up Layer (BBUL) Packages - A packaged semiconductor die with a bumpless die-package interface and methods of fabrication are described. For example, a semiconductor package includes a substrate having a land side with a lowermost layer of conductive vias. A semiconductor die is embedded in the substrate and has an uppermost layer of conductive lines, one of which is coupled directly to a conductive via of the lowermost layer of conductive vias of the substrate. In another example, a semiconductor package includes a substrate having a land side with a lowermost layer of conductive vias. A semiconductor die is embedded in the substrate and has an uppermost layer of conductive lines with a layer of conductive vias disposed thereon. At least one of the conductive lines is coupled directly to a conductive via of the semiconductor die which is coupled directly to a conductive via of the lowermost layer of conductive vias of the substrate. | 05-12-2016 |
Patent application number | Description | Published |
20090078598 | FRAGRANCE EMITTING PATCH AND COMPACT FOR HOLDING A PLURALITY OF SUCH PATCHES - A fragrance emitting patch kit including a compact having an internal compartment, and a plurality of fragrance emitting patches positioned within the internal compartment of the compact. | 03-26-2009 |
20090081912 | FRAGRANCE EMITTING PATCH - A fragrance emitting patch including a primary porous layer having a top and a bottom surface, a secondary layer having a top and a bottom surface, a construction adhesive arranged between the primary layer and the secondary layer for securing the primary and secondary layers to one another, the primary layer being provided with a fragrance, and an absolute difference of a Hildebrand solubility parameter of the construction adhesive and the Hildebrand solubility parameter of the fragrance is greater than 1.5. | 03-26-2009 |
20090247928 | Applicator for Intravaginal Devices - An applicator for intravaginal devices includes an elongate handle, an insertion sleeve, and an intravaginal device support member. The elongate handle has an open first end that defines a cavity extending into the handle. The insertion sleeve extends from the open first end of the handle; it is arranged and configured to slide into the cavity of the handle and to accommodate an intravaginal device; and it has associated therewith a trigger. The intravaginal device support member is disposed in the cavity of the handle; it is operatively connected to the handle; and it has a bearing surface disposed proximate the open first end of the handle. The applicators are useful to ensure that intravaginal devices are placed in the appropriate position to be effective. | 10-01-2009 |
20100075561 | FRAGRANCE EMITTING PATCH - A fragrance emitting patch including a primary porous layer having a top and a bottom surface, a secondary layer having a top and a bottom surface, a construction adhesive arranged between the primary layer and the secondary layer for securing the primary and secondary layers to one another, the primary layer being provided with a fragrance, and an absolute difference of a Hildebrand solubility parameter of the construction adhesive and the Hildebrand solubility parameter of the fragrance is greater than 1.5. | 03-25-2010 |
20100076389 | ABSORBENT ARTICLE INCLUDING FRAGRANCE EMITTING LAYER - A sanitary absorbent article including a cover layer, a barrier layer, a secondary barrier layer arranged between the cover layer and the barrier layer, the secondary barrier layer provided with an oil based fragrance, wherein the secondary barrier layer is a mineral oil polymer blend microporous film. | 03-25-2010 |
20100218359 | RESILIENT DEVICE - An intravaginal device has a working portion (e.g., intravaginal urinary incontinence device suppository, tampon) and an anchoring portion comprising at least one member extending beyond at least one end of the working portion to maintain the working portion in place during use. | 09-02-2010 |
20130160272 | RESILIENT DEVICE - An intravaginal device has a working portion (e.g., intravaginal urinary incontinence device suppository, tampon) and an anchoring portion comprising at least one member extending beyond at least one end of the working portion to maintain the working portion in place during use. | 06-27-2013 |
20130165742 | RESILIENT DEVICE - An intravaginal device has a working portion (e.g., intravaginal urinary incontinence device suppository, tampon) and an anchoring portion comprising at least one member extending beyond at least one end of the working portion to maintain the working portion in place during use. | 06-27-2013 |
Patent application number | Description | Published |
20110096914 | Method and System for Context Sensitive Calling - A system and method for context sensitive calling is disclosed in which context associated with a call is pulled from a file or database and forwarded with the call. In some embodiments, the context is pulled using a context reference number, and the context may be dependant upon the type of called terminal equipment available. | 04-28-2011 |
20110183652 | COMMUNICATION METHOD AND SYSTEM - A software button and software agent downloaded to a computing in response to actuation of the button make it possible to create a communication connection providing privacy, security and dynamic control of service. In one embodiment an online telephone directory comprised of software buttons is provided, in which a calling party can select a called party by clicking a software button dedicated to the called party. The button provides an identification of the called party, but all contact information is hidden and inaccessible to the calling party. Upon actuation of the button server containing the directory causes download of a software agent to the calling party's computing device, causing it to establish communication with the called party. In a second embodiment, software buttons provide a communication service which is dynamic, the nature or type of service changing based on conditions predefined by the called. For example, a called party may specify that, during business hours, communication be by telephone to a specific telephone number and outside of business hours, communication be by text message if urgent and e-mail if not urgent. When the calling party clicks a software button, the software agent downloaded to his computing device would then be a soft phone during business hours. Outside of business hours, a software agent would be downloaded to the calling party which would inquire whether the call is urgent and, depending upon the response, would provide a text message agent or an e-mail agent, respectively. | 07-28-2011 |
20110274259 | METHOD AND SYSTEM FOR IMPROVED COMMUNICATION SECURITY - Security is improved in a communication system in which a communication connection is established when a user who has received a software button on his computing device (a Recipient) clicks on the button. When a Recipient first actuates a software button, a basic type of communication connection is established, during which the Recipient's identity can be verified. The Recipient then establishes a personal identification code, which he will have to provide upon future actuations of the software button. The system then enables other types of communication connections to be established by the Recipient. After the Recipient actuates the software button and verifies his identity, the system remembers the identity and location of the computing device he is using. When the Recipient subsequently actuates the software button, the identity and location of his computing device are checked, and verification of his identity is suppressed if they have not changed. | 11-10-2011 |
20120140907 | Communication Method and System - A system is disclosed that may include a directory server on a network, the server having a network interface that includes a plurality of actuatable software buttons, each button identifying a listed party; a database of private information for listed parties; a button server on the network containing executable software agents constructed to create a communication interface for a communication connection; wherein the buttons are constructed to transfer to the user's computing device information describing the type of connection and private address information for the listed party identified by the actuated button, the button server then downloading, to the computing device of the user actuating the button, a software agent constructed to create a communication interface to the private address of the listed party identified by the actuated button. | 06-07-2012 |
20120192083 | METHOD AND SYSTEM FOR ENHANCED ONLINE SEARCHING - A user performing a search on a computing device, for example with a browser application, is provided with one or more software buttons on the display of the device. The buttons are created based on the subject matter of his search. As the user searches, his queries are stored. Should the user actuate a software button, real time communication, for example a telephone call, is established with an adviser, who receives a copy of the user's search queries on his computing device. | 07-26-2012 |
20120203793 | Method and System for Online Searching of Physical Objects - Online searching related to a physical object by a user making use of a computing device is accomplished by creating a representation of the object at the user's computing device. A software button originating remote from the user's computing device is provided to the user's computing device, and the button is constructed based upon the representation of the object. The software button is associated with a second device in use by a subscriber associated with the object, the button and it is actuable by the user. Upon actuation of the software button by the user, an executable agent is downloaded to his computing device, effective to establish a connection between the user's computing device and the second device. | 08-09-2012 |
20120275579 | Voice Message Communication Method and System - A system is disclosed which provides communication of recorded voice messages over a network among a plurality of users having voice communication devices. The system has a voice message server connected to the network, which includes a receiver which receives from a sending user's communication device a voice message signal including a header component and a recorded voice message component is stored at the server in association with the corresponding header. The header component identifies the sending user and an intended recipient user, and it is transmitted to the communication device of the intended recipient identified in the header component. The corresponding voice message component is transmitted to the recipient user's communication device in response to the recipient user's communication device requesting it. The recipient user may send a responsive voice message to the server addressed to the sending user. | 11-01-2012 |
20130210419 | System and Method for Associating Media Files with Messages - A system and method for composing an audio message are disclosed, which may include a memory for storing control parameters identifying respective preconfigured audio segments, the preconfigured audio segments being emotones; a recorder for enabling a user of the recording system to introduce user voice input into an audio message; and command input means for enabling the user of the recording system to selectively add user voice input and emotones into the audio message. | 08-15-2013 |
20140066099 | METHOD AND SYSTEM FOR PROVIDING ONE OR MORE LOCATION-BASED SERVICES USING THE LOCATION-OF-INTEREST OF AN ELECTRONIC JOURNAL - A method and system for providing one or more location-based services using the location-of-interest of a user or an electronic journal entry. In the first service, a user's terminal periodically determines whether its current geo-location is within a predefined distance of a location-of-interest. If the determination is in the affirmative, the user's terminal receives an audio recording from a data-processing system and plays it to the user as a reminder. In the second service, however, the user's terminal receives the audio recording from the data-processing system regardless of whether its current geo-location is or is not within a predefined distance of the location-of-interest. In contrast to the first service, the second service uses the virtual presence of a user to initiate the service, while first service uses the current geo-location of the user's terminal to initiate the service. | 03-06-2014 |
20140068443 | METHOD AND SYSTEM FOR CREATING MNEMONICS FOR LOCATIONS-OF-INTERESTS - A method and system for creating an electronic journal entry based on a mnemonic, wherein the mnemonic is created by a terminal in response to receiving a command from a user at a location-of-interest. The mnemonic comprises calendrical time of the command, an audio recording, and a photo that was recorded and captured at that location-of-interest. The user can retrieve the mnemonic from memory at a later time to listen to the audio recording and view the photo to help him recall the details of the location-of-interest. Once the user recalls the details, the journal entry is created by adding text, audio recordings, photos, and videos. As part of creating the journal entry, the user can provide authorization information for the journal entry. Once the user has finished creating the journal entry, the terminal transmits it to a data-processing system where an electronic journal of the user is updated. | 03-06-2014 |
Patent application number | Description | Published |
20090251122 | Method for DC/DC Conversion and DC/DC Converter Arrangement - A method for DC/DC conversion which comprises the steps of controlling a first switch ( | 10-08-2009 |
20100039177 | Amplifier Arrangement and Method for Amplification - An amplifier arrangement comprises a first transistor ( | 02-18-2010 |
20100308903 | Filtering Arrangement, Filtering Method and Current Sensing Arrangement - A filtering arrangement comprises a reference voltage input ( | 12-09-2010 |
20100327833 | Buck-Boost Switching Regulator and Method Thereof - A method for DC/DC conversion comprises operating in a Boost mode of operation or in a Buck-Boost mode of operation. Furthermore, the method comprises switching from the Boost mode of operation to the Buck-Boost mode of operation, if a desired value (VOUTR) of an output voltage (VOUT) which is generated from a supply voltage (VIN) by the DC/DC conversion is smaller than a first reference voltage (VR | 12-30-2010 |
20110187338 | Controlled Current Source and Method for Sourcing a Current - A controlled current source comprises a signal input to receive a control input bus signal (D | 08-04-2011 |
20110199062 | DC/DC Converter Arrangement and Method for DC/DC Conversion - A DC/DC converter arrangement comprises an input terminal ( | 08-18-2011 |
20110199069 | Band Gap Reference Circuit - A band gap reference circuit comprises a first branch ( | 08-18-2011 |
20110279173 | Controlled Charge Pump Arrangement and Method for Controlling a Clocked Charge Pump - A controlled charge pump comprises a clock operated charge pump having an output terminal to provide an output voltage. A first sub-circuit is coupled to the output terminal of the clocked operated charge pump and adapted to provide a first control signal in response to a comparison of the output voltage with a first reference signal. A second sub-circuit is coupled to the clocked operated charge pump and provides a second control signal in response to a comparison of a switch current within the clocked operated charge pump with a second reference signal. A clock skip controller is adapted to control the mode of operation of the clocked operated charge pump in response to that first and second control signals. | 11-17-2011 |
20110316499 | Current Source Regulator - A current source regulator for controlling an output device (Mp) of current source, the output device (Mp) providing an output current (Isrc) to a load. The current source regulator comprises a first feedback loop ( | 12-29-2011 |
20120105138 | Circuit Charge Pump Arrangement and Method for Providing a Regulated Current - A power source arrangement comprises a controlled and clocked operated power source, that power source providing an output voltage out of a plurality of output voltages in response to a first multiplication factor. One or more regulated current sources are connected to the controlled and clocked operated power source to provide an output current to respective loads. Each of the one or more regulated current sources is adapted to provide a first indication signal upon a regulated operation of the respective current source. The power source arrangement further comprises a dummy power source as well as a dummy current source connected to the dummy power source. The dummy current source receives a load signal corresponding to a voltage drop over the loads connected to the one or more regulated current sources and provides a second indication signal in response thereto. A control circuit receives the respective first and second indication signal and provides the control signal to the controlled and clocked operated power source in response thereto. | 05-03-2012 |
20120187932 | Voltage Converter and Method for Voltage Conversion - A voltage converter ( | 07-26-2012 |
20120228934 | Multi-Current Source and Method for Regulating Current - A multi-current-source comprises a voltage converter (VC), a first current source (CS | 09-13-2012 |
20140368464 | TOUCH SENSING SYSTEM AND METHOD FOR OPERATING A TOUCH SENSING SYSTEM - A touch sensing system comprises a signal generator (Tx), which is configured to provide an AC signal, a signal receiver (Rx), which is configured to perform a signal detection, a first transmitter node (T | 12-18-2014 |
Patent application number | Description | Published |
20100308463 | INTERFACIAL CAPPING LAYERS FOR INTERCONNECTS - Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing Al, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu—O bonds is contacted with trimethylaluminum to form a precursor layer having Al—O bonds and Al—C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form Al—N, Al—H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH | 12-09-2010 |
20110236594 | In-Situ Deposition of Film Stacks - Methods and hardware for depositing film stacks in a process tool in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a method for depositing, on a substrate, a film stack including films of different compositions in-situ in a process station using a plasma is described, the method including, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase. | 09-29-2011 |
20110244694 | DEPOSITING CONFORMAL BORON NITRIDE FILMS - A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is ashable, and can be removed with a hydrogen plasma without impacting surrounding materials. The dielectric has a much lower wet etch rate compared to other front end spacer or hard mask materials such as silicon oxide or silicon nitride, and has a relatively low dielectric constant, much lower then silicon nitride. | 10-06-2011 |
20120028454 | PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION - Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction. | 02-02-2012 |
20120258261 | INCREASING ETCH SELECTIVITY OF CARBON FILMS WITH LOWER ABSORPTION CO-EFFICIENT AND STRESS - A method for depositing a film includes arranging a substrate in a plasma enhanced chemical vapor deposition chamber. A first ashable hardmask (AHM) layer that is carbon-based is deposited on the substrate. During the depositing of the first AHM layer, doping is performed with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide. An atomic percentage of the at least one dopant is greater than or equal to 5% of the first AHM layer. | 10-11-2012 |
20130008378 | DEPOSITING CONFORMAL BORON NITRIDE FILMS - A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is ashable, and can be removed with a hydrogen plasma without impacting surrounding materials. The dielectric has a much lower wet etch rate compared to other front end spacer or hard mask materials such as silicon oxide or silicon nitride, and has a relatively low dielectric constant, much lower then silicon nitride. | 01-10-2013 |
20130040447 | CONFORMAL DOPING VIA PLASMA ACTIVATED ATOMIC LAYER DEPOSITION AND CONFORMAL FILM DEPOSITION - Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source. | 02-14-2013 |
20130143401 | METAL AND SILICON CONTAINING CAPPING LAYERS FOR INTERCONNECTS - Disclosed methods cap exposed surfaces of copper lines with a layer of metal or metal-containing compound combined with silicon. In some cases, the metal or metal-containing compound forms an atomic layer. In certain embodiments, the methods involve exposing the copper surface first to a metal containing precursor to form an atomic layer of adsorbed precursor or metal atoms, which may optionally be converted to an oxide, nitride, carbide, or the like by, e.g., a pinning treatment. Subsequent exposure to a silicon-containing precursor may proceed with or without metallic atoms being converted. | 06-06-2013 |
20130171834 | IN-SITU DEPOSITION OF FILM STACKS - Disclosed herein are methods of forming a film stack which may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Also disclosed herein are process station apparatuses for forming a film stack of silicon nitride and silicon oxide films which may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators. | 07-04-2013 |
20130323930 | Selective Capping of Metal Interconnect Lines during Air Gap Formation - Provided are methods and systems for forming air gaps in an interconnect layer between adjacent conductive lines. Protective layers may be selectively formed on exposed surfaces of the conductive lines, while structures in between the lines may remain unprotected. These structures may be made from a sacrificial material that is later removed to form voids. In certain embodiments, the structures are covered with a permeable non-protective layer that allows etchants and etching products to pass through during removal. When a work piece having a selectively formed protective layer is exposed to gas or liquid etchants, these etchants remove the sacrificial material without etching or otherwise impacting the metal lines. Voids formed in between these lines may be then partially filled with a dielectric material to seal the voids and/or protect sides of the metal lines. Additional interconnect layers may be formed above the processed layer containing air gaps. | 12-05-2013 |
20140053867 | PLASMA CLEAN METHOD FOR DEPOSITION CHAMBER - Improved methods and apparatuses for removing residue from the interior surfaces of the deposition reactor are provided. The methods involve increasing availability of cleaning reagent radicals inside the deposition chamber by generating cleaning reagent radicals in a remote plasma generator and then further delivering in-situ plasma energy while the cleaning reagent mixture is introduced into the deposition chamber. Certain embodiments involve a multi-stage process including a stage in which the cleaning reagent mixture is introduced at a high pressure (e.g., about 0.6 Torr or more) and a stage the cleaning reagent mixture is introduced at a low pressure (e.g., about 0.6 Torr or less). | 02-27-2014 |
20140057454 | METHODS AND APPARATUS FOR PLASMA-BASED DEPOSITION - High-deposition rate methods for forming transparent ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers are provided. The methods involve placing a wafer on a powered electrode such as a powered pedestal for plasma-enhanced deposition. According to various embodiments, the deposition is run at low hydrocarbon precursor partial pressures and/or low process temperatures. Also provided are ceramic wafer pedestals with multiple electrode planes embedded with the pedestal are provided. According to various embodiments, the pedestals have multiple RF mesh electrode planes that are connected together such that all the electrode planes are at the same potential. | 02-27-2014 |
20140216336 | METAL AND SILICON CONTAINING CAPPING LAYERS FOR INTERCONNECTS - Disclosed methods cap exposed surfaces of copper lines with a layer of metal or metal-containing compound combined with silicon. In some cases, the metal or metal-containing compound forms an atomic layer. In certain embodiments, the methods involve exposing the copper surface first to a metal containing precursor to form an atomic layer of adsorbed precursor or metal atoms, which may optionally be converted to an oxide, nitride, carbide, or the like by, e.g., a pinning treatment. Subsequent exposure to a silicon-containing precursor may proceed with or without metallic atoms being converted. | 08-07-2014 |
20140216337 | PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION - Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction. | 08-07-2014 |
20140217193 | METHOD AND APPARATUS FOR PURGING AND PLASMA SUPPRESSION IN A PROCESS CHAMBER - A substrate processing system includes a showerhead that comprises a head portion and a stem portion and that delivers precursor gas to a processing chamber. A baffle includes a base portion having an outer diameter that is greater than an outer diameter of the head portion of the showerhead, that comprises a dielectric material and that is arranged between the head portion of the showerhead and an upper surface of the processing chamber. | 08-07-2014 |
20150013607 | IN-SITU DEPOSITION OF FILM STACKS - An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase. | 01-15-2015 |
20150093908 | HIGH SELECTIVITY AND LOW STRESS CARBON HARDMASK BY PULSED LOW FREQUENCY RF POWER - Methods of forming high etch selectivity, low stress ashable hard masks using plasma enhanced chemical vapor deposition are provided. In certain embodiments, the methods involve pulsing low frequency radio frequency power while keeping high frequency radio frequency power constant during deposition of the ashable hard mask using a dual radio frequency plasma source. According to various embodiments, the low frequency radio frequency power can be pulsed between non-zero levels or by switching the power on and off. The resulting deposited highly selective ashable hard mask may have decreased stress due to one or more factors including decreased ion and atom impinging on the ashable hard mask and lower levels of hydrogen trapped in the ashable hard mask. | 04-02-2015 |
20150206719 | PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION - Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction. | 07-23-2015 |
20150221542 | METHODS AND APPARATUS FOR SELECTIVE DEPOSITION OF COBALT IN SEMICONDUCTOR PROCESSING - Methods and apparatus for selective deposition of cobalt on copper lines in the presence of exposed dielectric in semiconductor processing are provided. Cobalt in its metallic form is selectively deposited onto copper in the presence of dielectric by contacting a prepared surface of the substrate with an organometallic cobalt compound in a presence of a reducing agent. Surface preparation involves H | 08-06-2015 |
20150380296 | CLEANING OF CARBON-BASED CONTAMINANTS IN METAL INTERCONNECTS FOR INTERCONNECT CAPPING APPLICATIONS - Protective caps residing at an interface between copper lines and dielectric diffusion barrier layers are used to improve various performance characteristics of interconnects. The caps, such as cobalt-containing caps or manganese-containing caps, are selectively deposited onto exposed copper lines in a presence of exposed dielectric using CVD or ALD methods. The deposition of the capping material is affected by the presence of carbon-containing contaminants on the surface of copper, which may lead to poor or uneven growth of the capping layer. A method of removing carbon-containing contaminants from the copper surface prior to deposition of caps involves contacting the substrate containing the exposed copper surface with a silylating agent at a first temperature to form a layer of reacted silylating agent on the copper surface, followed by heating the substrate at a higher temperature to release the reacted silylating agent from the copper surface. | 12-31-2015 |