Patent application number | Description | Published |
20110078554 | WEBPAGE ENTITY EXTRACTION THROUGH JOINT UNDERSTANDING OF PAGE STRUCTURES AND SENTENCES - Described is a technology for understanding entities of a webpage, e.g., to label the entities on the webpage. An iterative and bidirectional framework processes a webpage, including a text understanding component (e.g., extended Semi-CRF model) that provides text segmentation features to a structure understanding component (e.g., extended HCRF model). The structure understanding component uses the text segmentation features and visual layout features of the webpage to identify a structure (e.g., labeled block). The text understanding component in turn uses the labeled block to further understand the text. The process continues iteratively until a similarity criterion is met, at which time the entities may be labeled. Also described is the use of multiple mentions of a set of text in the webpage to help in labeling an entity. | 03-31-2011 |
20110283205 | AUTOMATED SOCIAL NETWORKING GRAPH MINING AND VISUALIZATION - The automated social networking graph mining and visualization technique described herein mines social connections and allows creation of a social networking graph from general (not necessarily social-application specific) Web pages. The technique uses the distances between a person's/entity's name and related people's/entities names on one or more Web pages to determine connections between people/entities and the strengths of the connections. In one embodiment, the technique lays out these connections, and then clusters them, in a 2-D layout of a social networking graph that represents the Web connection strengths among the related people's or entities' names, by using a force-directed model. | 11-17-2011 |
20120303557 | INTERACTIVE FRAMEWORK FOR NAME DISAMBIGUATION - A “Name Disambiguator” provides various techniques for implementing an interactive framework for resolving or disambiguating entity names (associated with objects such as publications) for entity searches where two or more same or similar names may refer to different entities. More specifically, the Name Disambiguator uses a combination of user input and automatic models to address the disambiguation problem. In various embodiments, the Name Disambiguator uses a two part process, including: 1) a global SVM trained from large sets of documents or objects in a simulated interactive mode, and 2) further personalization of local SVM models (associated with individual names or groups of names such as, for example, a group of coauthors) derived from the global SVM model. The result of this process is that large sets of documents or objects are rapidly and accurately condensed or clustered into ordered sets by that are organized by entity names. | 11-29-2012 |
20150046779 | AUGMENTING AND PRESENTING CAPTURED DATA - Captured data can be transformed and augmented for a particular presentation in a document, such as a note of a notebook application, based on an identified entity for the captured data. The particular presentation of captured data can be provided based on entity detection, extraction, and knowledge base resolution and retrieval. Methods, systems, and services are provided that identify a primary entity of an item input to a notebook application and create an entity object for the primary entity of the item at least from one or more structured representations for content associated with the item. A template for presenting the entity object can be determined according to the primary entity, where the template is selected from a set of templates corresponding to different primary entities such that an arrangement and presentation for one primary entity is different than that of another primary entity. | 02-12-2015 |
Patent application number | Description | Published |
20090050468 | CONTROLLED SURFACE OXIDATION OF ALUMINUM INTERCONNECT - An aluminum interconnect metallization for an integrated circuit is controllably oxidized in a pure oxygen ambient with the optional addition of argon. It is advantageously performed as the wafer is cooled from above 300° C. occurring during aluminum sputtering to less than 100° C. allowing the aluminized wafer to be loaded into a plastic cassette. Oxidation may controllably occur in a pass-through chamber between a high-vacuum and a low-vacuum transfer chamber. The oxygen partial pressure is advantageously in the range of 0.01 to 1 Torr, preferably 0.1 to 0.5 Torr. The addition of argon to a total pressure of greater than 1 Torr promotes wafer cooling when the wafer is placed on a water-cooled pedestal. To prevent oxygen backflow into the sputter chambers, the cool down chamber is not vacuum pumped during cooling and first argon and then oxygen are pulsed into the chamber. | 02-26-2009 |
20090308732 | APPARATUS AND METHOD FOR UNIFORM DEPOSITION - Embodiments of the present invention generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a sputter deposition system includes a collimator that has apertures having aspect ratios that decrease from a central region of the collimator to a peripheral region of the collimator. In one embodiment, the collimator is coupled to a grounded shield via a bracket member that includes a combination of internally and externally threaded fasteners. In another embodiment, the collimator is integrally attached to a grounded shield. In one embodiment, a method of sputter depositing material includes pulsing the bias on the substrate support between high and low values. | 12-17-2009 |
20100096253 | PVD CU SEED OVERHANG RE-SPUTTERING WITH ENHANCED CU IONIZATION - A method and apparatus for depositing metal on a patterned substrate are provided. A metal layer is formed in a physical vapor deposition process having a first energy. A second physical vapor deposition process is performed on the metal layer, using a second energy, wherein deposition interacts with brittle and plastic surface modification processes to form a substantially conformal metal layer on the substrate. | 04-22-2010 |
20110303960 | LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING - Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer. | 12-15-2011 |
20120024229 | CONTROL OF PLASMA PROFILE USING MAGNETIC NULL ARRANGEMENT BY AUXILIARY MAGNETS - Magnetrons for use in physical vapor deposition (PVD) chambers and methods of use thereof are provided herein. In some embodiments, an apparatus may include a support member having an axis of rotation; a plurality of first magnets coupled to the support member on a first side of the axis of rotation and having a first polarity oriented in a first direction perpendicular to the support member; and a second magnet coupled to the support member on a second side of the axis of rotation opposite the first side and having a second polarity oriented in a second direction opposite the first direction. In some embodiments, the apparatus is capable of forming a magnetic field including one or more magnetic nulls that modulate local plasma uniformity in a physical vapor deposition (PVD) chamber. | 02-02-2012 |
20120027954 | MAGNET FOR PHYSICAL VAPOR DEPOSITION PROCESSES TO PRODUCE THIN FILMS HAVING LOW RESISTIVITY AND NON-UNIFORMITY - Methods and apparatus for depositing thin films having high thickness uniformity and low resistivity are provided herein. In some embodiments, a magnetron assembly includes a shunt plate, the shunt plate rotatable about an axis, an inner closed loop magnetic pole coupled to the shunt plate, and an outer closed loop magnetic pole coupled the shunt plate, wherein an unbalance ratio of a magnetic field strength of the outer closed loop magnetic pole to a magnetic field strength of the inner closed loop magnetic pole is less than about 1. In some embodiments, the ratio is about 0.57. In some embodiments, the shunt plate and the outer close loop magnetic pole have a cardioid shape. A method utilizing RF and DC power in combination with the inventive magnetron assembly is also disclosed. | 02-02-2012 |
20130199925 | HIGH DENSITY TiN RF/DC PVD DEPOSITION WITH STRESS TUNING - Methods for depositing a layer on a substrate are provided herein. In some embodiments, a method of depositing a metal-containing layer on a substrate in a physical vapor deposition (PVD) chamber may include applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying DC power to the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the potential on the substrate to be the same polarity as the ionized metal atoms to deposit a metal-containing layer on the substrate. | 08-08-2013 |
20130296158 | PVD ALN FILM WITH OXYGEN DOPING FOR A LOW ETCH RATE HARDMASK FILM - The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask. | 11-07-2013 |
20140042016 | LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING - Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer. | 02-13-2014 |
20140110248 | CHAMBER PASTING METHOD IN A PVD CHAMBER FOR REACTIVE RE-SPUTTERING DIELECTRIC MATERIAL - According to embodiments provide a method for forming dielectric films using physical vapor deposition chamber. Particularly, a pasting process may be performed to apply a conductive coating over inner surfaces of the physical vapor deposition chamber. The pasting process may be performed under adjusted process parameters, such as increased spacing and/or increased chamber pressure. The adjusted parameters allow the conductive coating to be formed more efficiently and effectively. | 04-24-2014 |
20140251217 | TARGET FOR PVD SPUTTERING SYSTEM - Embodiments of apparatus for physical vapor deposition are provided. In some embodiments, a target assembly for use in a substrate processing system to process a substrate includes a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter and is bounded by a first edge; and a target having a first side bonded to the target supporting surface, wherein a diameter of the target is greater than the first diameter of the target supporting surface. | 09-11-2014 |
20140327117 | OPTICALLY TUNED HARDMASK FOR MULTI-PATTERNING APPLICATIONS - The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiO | 11-06-2014 |