Patent application number | Description | Published |
20090061647 | CURING METHODS FOR SILICON DIOXIDE THIN FILMS DEPOSITED FROM ALKOXYSILANE PRECURSOR WITH HARP II PROCESS - Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer overlying at least a portion of the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods may also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may also include removing the acidic vapor from the semiconductor processing chamber. Systems to deposit a silicon oxide layer on a substrate are also described. | 03-05-2009 |
20090104755 | HIGH QUALITY SILICON OXIDE FILMS BY REMOTE PLASMA CVD FROM DISILANE PRECURSORS - A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor. | 04-23-2009 |
20090104789 | METHOD AND SYSTEM FOR IMPROVING DIELECTRIC FILM QUALITY FOR VOID FREE GAP FILL - A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed. | 04-23-2009 |
20090104791 | Methods for Forming a Silicon Oxide Layer Over a Substrate - A method of depositing a silicon oxide layer over a substrate includes providing a substrate to a deposition chamber. A first silicon-containing precursor, a second silicon-containing precursor and a NH | 04-23-2009 |
20100081293 | METHODS FOR FORMING SILICON NITRIDE BASED FILM OR SILICON CARBON BASED FILM - A method for depositing a silicon nitride based dielectric layer is provided. The method includes introducing a silicon precursor and a radical nitrogen precursor to a deposition chamber. The silicon precursor has a N—Si—H bond, N—Si—Si bond and/or Si—Si—H bond. The radical nitrogen precursor is substantially free from included oxygen. The radical nitrogen precursor is generated outside the deposition chamber. The silicon precursor and the radical nitrogen precursor interact to form the silicon nitride based dielectric layer. | 04-01-2010 |
20110014798 | HIGH QUALITY SILICON OXIDE FILMS BY REMOTE PLASMA CVD FROM DISILANE PRECURSORS - A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor. | 01-20-2011 |
20110053380 | SILICON-SELECTIVE DRY ETCH FOR CARBON-CONTAINING FILMS - A method of etching silicon-and-carbon-containing material is described and includes a SiConi™ etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi™ etch reducing the carbon content in the near surface region and allowing the SiConi™ etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi™ etch further improving the effective etch rate. | 03-03-2011 |
20110129616 | OXYGEN-DOPING FOR NON-CARBON RADICAL-COMPONENT CVD FILMS - Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment. | 06-02-2011 |
20110151677 | WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS - Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate. | 06-23-2011 |
20110159213 | CHEMICAL VAPOR DEPOSITION IMPROVEMENTS THROUGH RADICAL-COMPONENT MODIFICATION - A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing ammonia and nitrogen (N | 06-30-2011 |
20120003840 | IN-SITU OZONE CURE FOR RADICAL-COMPONENT CVD - Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment. | 01-05-2012 |
20120070957 | AIR GAP FORMATION - A method of forming air gaps between adjacent raised features on a substrate includes forming a carbon-containing material in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming a silicon-containing film over the carbon-containing material using a flowable deposition process, where the silicon-containing film fills an upper region between the adjacent raised features and extends over the adjacent raised features. The method also includes curing the carbon-containing material and the silicon-containing material at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. | 03-22-2012 |
20120083133 | AMINE CURING SILICON-NITRIDE-HYDRIDE FILMS - Methods of forming dielectric layers are described. The methods may include forming a silicon-nitrogen-and-hydrogen-containing layer on a substrate. The methods include ozone curing the silicon-nitrogen-and-hydrogen-containing layer to turn the silicon-nitrogen-and-hydrogen-containing layer into a silicon-and-oxygen-containing layer. Following ozone curing, the layer is exposed to an amine-water combination at low temperature before an anneal. The presence of the amine cure allows the conversion to silicon-and-oxygen-containing layer to occur more rapidly and completely at a lower temperature during the anneal. The amine cure also enables the anneal to use a less oxidative environment to effect the conversion to the silicon-and-oxygen-containing layer. | 04-05-2012 |
20120088193 | Radiation Patternable CVD Film - Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer. | 04-12-2012 |
20120142198 | WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS - Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate. | 06-07-2012 |
20120196451 | EMBEDDED CATALYST FOR ATOMIC LAYER DEPOSITION OF SILICON OXIDE - Catalyzed atomic layer deposition from a reduced number of precursors is described. A deposition precursor contains silicon, oxygen and a catalytic ligand. A hydroxyl-terminated substrate is exposed to the deposition precursor to form a silicon bridge bond between two surface-bound oxygens. The surface-bound oxygens were part of two surface-bound hydroxyl groups and the adsorption of the deposition precursor liberates the hydrogens. The silicon atom is also chemically-bound to one or two additional oxygen atoms which were already chemically-bound to the silicon within a same deposition precursor molecule. At least one of the additional oxygen atoms is further chemically-bound to the catalytic ligand either directly or by way of a hydrocarbon chain. Further exposure of the substrate to moisture (H | 08-02-2012 |
20120213940 | ATOMIC LAYER DEPOSITION OF SILICON NITRIDE USING DUAL-SOURCE PRECURSOR AND INTERLEAVED PLASMA - Atomic layer deposition using a precursor having both nitrogen and silicon components is described. The deposition precursor contains molecules which supply both nitrogen and silicon to a growing film of silicon nitride. Silicon-nitrogen bonds may be present in the precursor molecule, but hydrogen and/or halogens may also be present. The growth substrate may be terminated in a variety of ways and exposure to the deposition precursor displaces species from the outer layer of the growth substrate, replacing them with an atomic-scale silicon-and-nitrogen-containing layer. The silicon-and-nitrogen-containing layer grows until one complete layer is produced and then stops (self-limiting growth kinetics). Subsequent exposure to a plasma excited gas modifies the chemical termination of the surface so the growth step may be repeated. The presence of both silicon and nitrogen in the deposition precursor molecule increases the deposition per cycle thereby reducing the number of precursor exposures to grow a film of the same thickness. | 08-23-2012 |
20120309205 | CAPPING LAYER FOR REDUCED OUTGASSING - A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen containing film is formed by combining a radical precursor (excited in a remote plasma) with m unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum. | 12-06-2012 |
20130177847 | PHOTORESIST FOR IMPROVED LITHOGRAPHIC CONTROL - Methods and corresponding photoresists are described for fine linewidth lithography using x-rays, e-beams, visible spectrum optical lithography, ultra-violet optical lithography or extreme ultra-violet lithography. The methods include the formation of a photoresist film including a dopant having an atomic mass greater than or equal to twenty two. The dopant may be introduced daring the formation of the photoresist. The photoresist includes the dopant to increase the absorption of radiation during lithography. The photoresist may be silicon-, germanium or carbon-based photoresists. | 07-11-2013 |
20130217239 | FLOWABLE SILICON-AND-CARBON-CONTAINING LAYERS FOR SEMICONDUCTOR PROCESSING - Methods are described for forming and curing a gapfill silicon-and-carbon-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor excited by a radical hydrogen precursor that has been activated in a remote plasma region. Exemplary precursors include 1,3,5-trisilapentane (H | 08-22-2013 |
20130217240 | FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING - Methods are described for forming a dielectric layer on a semiconductor substrate. The methods may include providing a silicon-containing precursor and an energized nitrogen-containing precursor to a chemical vapor deposition chamber. The silicon-containing precursor and the energized nitrogen-containing precursor may be reacted in the chemical vapor deposition chamber to deposit a flowable silicon-carbon-nitrogen material on the substrate. The methods may further include treating the flowable silicon-carbon-nitrogen material to form the dielectric layer on the semiconductor substrate. | 08-22-2013 |
20130217241 | TREATMENTS FOR DECREASING ETCH RATES AFTER FLOWABLE DEPOSITION OF SILICON-CARBON-AND-NITROGEN-CONTAINING LAYERS - Methods are described for forming and curing a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon and carbon containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition chamber temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is treated to remove components which enabled the flowability, but are no longer needed after deposition. Removal of the components increases etch resistance in order to allow the gapfill silicon-carbon-and-nitrogen-containing layer to remain intact during subsequent processing. The treatments have been found to decrease the evolution of properties of the film upon exposure to atmosphere. | 08-22-2013 |
20130217243 | DOPING OF DIELECTRIC LAYERS - Methods are described for forming and treating a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is ion implanted to increase etch tolerance, prevent shrinkage, adjust film tension and/or adjust electrical characteristics. Ion implantation may also remove components which enabled the flowability, but are no longer needed after deposition. Some treatments using ion implantation have been found to decrease the evolution of properties of the film upon exposure to atmosphere. | 08-22-2013 |
20130267079 | MOLECULAR LAYER DEPOSITION OF SILICON CARBIDE - Molecular layer deposition of silicon carbide is described. A deposition precursor includes a precursor molecule which contains silicon, carbon and hydrogen. Exposure of a surface to the precursor molecule results in self-limited growth of a single layer. Though the growth is self-limited, the thickness deposited during each cycle of molecular layer deposition involves multiple “atomic” layers and so each cycle may deposit thicknesses greater than typically found during atomic layer depositions. Precursor effluents are removed from the substrate processing region and then the surface is irradiated before exposing the layer to the deposition precursor again. | 10-10-2013 |
20140045342 | FLOWABLE CARBON FOR SEMICONDUCTOR PROCESSING - Methods are described for forming flowable carbon layers on a semiconductor substrate. A local excitation (such as a hot filament in hot wire CVD, a plasma in PECVD or UV light) may be applied as described herein to a silicon-free carbon-containing precursor containing a hydrocarbon to form a flowable carbon-containing film on a substrate. A remote excitation method has also been found to produce flowable carbon-containing films by exciting a stable precursor to produce a radical precursor which is then combined with unexcited silicon-free carbon-containing precursors in the substrate processing region. | 02-13-2014 |
20140051264 | FLOWABLE FILMS USING ALTERNATIVE SILICON PRECURSORS - Methods of depositing initially flowable dielectric films on substrates are described. The methods include introducing silicon-containing precursor to a deposition chamber that contains the substrate. The methods further include generating at least one excited precursor, such as radical nitrogen or oxygen precursor, with a remote plasma system located outside the deposition chamber. The excited precursor is also introduced to the deposition chamber, where it reacts with the silicon-containing precursor in a reaction zone deposits the initially flowable film on the substrate. The flowable film may be treated in, for example, a steam environment to form a silicon oxide film. | 02-20-2014 |
20140073144 | LOW COST FLOWABLE DIELECTRIC FILMS - A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N | 03-13-2014 |
20140248754 | CONTROLLED AIR GAP FORMATION - A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps. | 09-04-2014 |
20140268083 | ULTRA-SMOOTH LAYER ULTRAVIOLET LITHOGRAPHY MIRRORS AND BLANKS, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR - An extreme ultraviolet mirror or blank production system includes: a first deposition system for depositing a planarization layer over a semiconductor substrate; a second deposition system for depositing an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; and a third deposition system for depositing a multi-layer stack over the ultra-smooth layer. The extreme ultraviolet blank includes: a substrate; a planarization layer over the substrate; an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; a multi-layer stack; and capping layers over the multi-layer stack. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a planarization layer and an ultra-smooth layer over the planarization layer; and a wafer stage for placing a wafer. | 09-18-2014 |
20140302688 | FLOWABLE SILICON-CARBON-OXYGEN LAYERS FOR SEMICONDUCTOR PROCESSING - Methods are described for forming a dielectric layer on a patterned substrate. The methods may include combining a silicon-and-carbon-containing precursor and a radical oxygen precursor in a plasma free substrate processing region within a chemical vapor deposition chamber. The silicon-and-carbon-containing precursor and the radical oxygen precursor react in to deposit a flowable silicon-carbon-oxygen layer on the patterned substrate. The resulting film possesses a low wet etch rate ratio relative to thermal silicon oxide and other standard dielectrics. | 10-09-2014 |
20150147879 | ULTRA-THIN STRUCTURE TO PROTECT COPPER AND METHOD OF PREPARATION - Methods of depositing thin, low dielectric constant layers that are effective diffusion barriers on metal interconnects of semiconductor circuits are described. A self-assembled monolayer (SAM) of molecules each having a head moiety and a tail moiety are deposited on the metal. The SAM molecules self-align, wherein the head moiety is formulated to selectively bond to the metal layer leaving the tail moiety disposed at a distal end of the molecule. A dielectric layer is subsequently deposited on the SAM, chemically bonding to the tail moiety of the SAM molecules. | 05-28-2015 |
Patent application number | Description | Published |
20140231384 | HDD PATTERNING USING FLOWABLE CVD FILM - Method and apparatus for forming a patterned magnetic substrate are provided. A patterned resist is formed on a magnetically active surface of a substrate. An oxide layer is formed over the patterned resist by a flowable CVD process. The oxide layer is etched to expose portions of the patterned resist. The patterned resist is then etched, using the etched oxide layer as a mask, to expose portions of the magnetically active surface. A magnetic property of the exposed portions of the magnetically active surface is then modified by directing energy through the etched resist layer and the etched oxide layer, which are subsequently removed from the substrate. | 08-21-2014 |
20140273430 | INTEGRATED CLUSTER TO ENABLE NEXT GENERATION INTERCONNECT - Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns. | 09-18-2014 |
20150126045 | LOW TEMPERATURE SILICON NITRIDE FILMS USING REMOTE PLASMA CVD TECHNOLOGY - Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ). | 05-07-2015 |
20150140833 | METHOD OF DEPOSITING A LOW-TEMPERATURE, NO-DAMAGE HDP SIC-LIKE FILM WITH HIGH WET ETCH RESISTANCE - Embodiments of the invention generally relate to methods of forming an etch resistant silicon-carbon-nitrogen layer. The methods generally include activating a silicon-containing precursor and a nitrogen-containing precursor in the processing region of a processing chamber in the presence of a plasma and depositing a thin flowable silicon-carbon-nitrogen material on a substrate using the activated silicon-containing precursor and a nitrogen-containing precursor. The thin flowable silicon-carbon-nitrogen material is subsequently cured using one of a variety of curing techniques. A plurality of thin flowable silicon-carbon-nitrogen material layers are deposited sequentially to create the final layer. | 05-21-2015 |
20150179581 | METAL-CONTAINING FILMS AS DIELECTRIC CAPPING BARRIER FOR ADVANCED INTERCONNECTS - A method is provided for forming an interconnect structure for use in semiconductor devices. The method starts with forming a low-k bulk dielectric layer on a substrate and then forming a trench in the low-k bulk dielectric layer. A liner layer is formed on the low-k bulk dielectric layer being deposited conformally to the trench. A copper layer is formed on the liner layer filling the trench. Portions of the copper layer and liner layer are removed to form an upper surface of the low-k bulk dielectric layer, the liner layer, and the copper layer. A metal containing dielectric layer is formed on the upper surface of the low-k bulk dielectric layer, the liner layer, and the copper layer. | 06-25-2015 |
20150187563 | PHOTO-ASSISTED DEPOSITION OF FLOWABLE FILMS - A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV activation are encouraged to deposit on the substrate to form a flowable film on the substrate. The substrate may be cooled to encourage deposition. The film may be hardened by heating and/or by further exposure to UV radiation. | 07-02-2015 |
20150194317 | DEVELOPMENT OF HIGH ETCH SELECTIVE HARDMASK MATERIAL BY ION IMPLANTATION INTO AMORPHOUS CARBON FILMS - Embodiments described herein provide for a method of forming an etch selective hardmask. An amorphous carbon hardmask is implanted with various dopants to increase the hardness and density of the hardmask. The ion implantation of the amorphous carbon hardmask also maintains or reduces the internal stress of the hardmask. The etch selective hardmask generally provides for improved patterning in advanced NAND and DRAM devices. | 07-09-2015 |
20150196933 | CARBON DIOXIDE AND CARBON MONOXIDE MEDIATED CURING OF LOW K FILMS TO INCREASE HARDNESS AND MODULUS - Embodiments of the invention generally relate to methods of curing a carbon/silicon-containing low k material. The methods generally include delivering a deposition precursor to the processing region, the deposition precursor comprising a carbon/silicon-containing precursor, forming a remote plasma in the presence of an oxygen containing precursor, delivering the activated oxygen containing precursor to the deposition precursor to deposit a carbon/silicon-containing low k material on the substrate and curing the carbon/silicon-containing low k material in the presence of a carbon oxide gas. | 07-16-2015 |
20150200094 | CARBON FILM STRESS RELAXATION - Methods are described for treating a carbon film on a semiconductor substrate. The carbon may have a high content of sp3 bonding to increase etch resistance and enable new applications as a hard mask. The carbon film may be referred to as diamond-like carbon before and even after treatment. The purpose of the treatment is to reduce the typically high stress of the deposited carbon film without sacrificing etch resistance. The treatment involves ion bombardment using plasma effluents formed from a local capacitive plasma. The local plasma is formed from one or more of inert gases, carbon-and-hydrogen precursors and/or nitrogen-containing precursors. | 07-16-2015 |
20150214039 | LOW TEMPERATURE CURE MODULUS ENHANCEMENT - Implementations described herein generally relate to methods for dielectric gap-fill. In one implementation, a method of depositing a silicon oxide layer on a substrate is provided. The method comprises introducing a cyclic organic siloxane precursor and an aliphatic organic siloxane precursor into a deposition chamber, reacting the cyclic organic siloxane precursor and the aliphatic organic siloxane precursor with atomic oxygen to form the silicon oxide layer on a substrate positioned in the deposition chamber, wherein the substrate is maintained at a temperature between about 0° C. and about 200° C. as the silicon oxide layer is formed, wherein the silicon oxide layer is initially flowable following deposition, and wherein a ratio of a flow rate of the cyclic organic siloxane precursor to a flow rate of the aliphatic organic siloxane precursor is at least 2:1 and curing the deposited silicon oxide layer. | 07-30-2015 |
20150221480 | CHAMBER COATINGS - In one embodiment, a processing chamber is disclosed wherein at least one surface of the processing chamber has a coating comprising Si | 08-06-2015 |
20150228463 | CLEANING PROCESS FOR CLEANING AMORPHOUS CARBON DEPOSITION RESIDUALS USING LOW RF BIAS FREQUENCY APPLICATIONS - Methods for cleaning a processing chamber to remove amorphous carbon containing residuals from the processing chamber are provided. The cleaning process utilizes a low frequency RF bias power during the cleaning process. In one embodiment, a method of cleaning a processing chamber includes supplying a cleaning gas mixture into a processing chamber, applying a RF bias power of about 2 MHz or lower to a substrate support assembly disposed in the processing chamber to form a plasma in the cleaning gas mixture in the processing chamber, and removing deposition residuals from the processing chamber. | 08-13-2015 |
20150376788 | APPARATUS FOR RADICAL-BASED DEPOSITION OF DIELECTRIC FILMS - Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD). | 12-31-2015 |
20160027614 | DEPOSITION OF METAL DOPED AMORPHOUS CARBON FILM - Embodiments of the present disclosure relate to a metal-doped amorphous carbon hardmask for etching the underlying layer, layer stack, or structure. In one embodiment, a method of processing a substrate in a processing chamber includes exposing a substrate to a gas mixture comprising a carbon-containing precursor and a metal-containing precursor, reacting the carbon-containing precursor and the metal-containing precursor in the processing chamber to form a metal-doped carbon layer over a surface of the substrate, forming in the metal-doped carbon layer a defined pattern of through openings, and transferring the defined pattern to an underlying layer beneath the metal-doped carbon layer using the metal-doped carbon layer as a mask. An etch hardmask using the inventive metal-doped amorphous carbon film provides reduced compressive stress, high hardness, and therefore higher etch selectivity. | 01-28-2016 |
20160049331 | INTEGRATED CLUSTER TO ENABLE NEXT GENERATION INTERCONNECT - Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns. | 02-18-2016 |
20160093488 | FLOWABLE LOW-K DIELECTRIC GAPFILL TREATMENT - Methods are described for forming a flowable low-k dielectric film on a patterned substrate. The film may be a silicon-carbon-oxygen (Si—C—O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. Shortly after deposition, the silicon-carbon-oxygen layer is treated by exposure to a hydrogen-and-nitrogen-containing precursor such as ammonia prior to curing. The treatment may remove residual moisture from the silicon-carbon-oxygen layer and may make the lattice more resilient during curing and subsequent processing. The treatment may reduce shrinkage of the silicon-carbon-oxygen layer during subsequent processing. | 03-31-2016 |