Patent application number | Description | Published |
20110072440 | PARALLEL PROCESSING SYSTEM AND METHOD - A parallel processing system determines whether to drive all or some processors so as to process data that are input based on capacity or time for processing the input data. Also, the system temporarily stores the data that are processed and output by the respective processors, and controls the same to be output when it becomes the calculated output time based on the traffic processing time for the input data. | 03-24-2011 |
20110113218 | CROSS FLOW PARALLEL PROCESSING METHOD AND SYSTEM - Provided is a cross flow parallel processing method and system that may process multiple data flows and increase a parallel processing rate in a multi-processor that processes multiple cross data flows. | 05-12-2011 |
20110145276 | APPARATUS AND METHOD FOR PARALLEL PROCESSING DATA FLOW - Provided is a data flow parallel processing apparatus and method. The data flow parallel processing apparatus may include a flow discriminating unit to discriminate a flow of input first data, a processor allocating unit to allocate, to the first data, a processor that is not operating among a plurality of processors, a sequence determining unit to determine a sequence number of the first data when a second data having the same flow as the discriminated flow is being processed by any one processor composing the plurality of processors, and an alignment unit to receive the first data processed by the allocated processor and to output the received first data based on the determined sequence number. | 06-16-2011 |
20110149741 | APPARATUS AND METHOD FOR PROCESSING MULTI-LAYER PACKET - Provided is an apparatus and method for inspecting a multi-layer packet. The apparatus may include a lower layer processing unit to generate lower layer hash information based on a lower layer packet of the multi-layer packet, and to perform a first processing with respect to a flow of the multi-layer packet, in association with the generated lower layer hash information, and a higher layer preprocessing unit to perform a second processing with respect to a flow of the multi-layer packet where the first processing is performed, in association with the lower layer hash information. | 06-23-2011 |
20110153710 | APPARATUS AND METHOD FOR PARALLEL-PROCESSING DATA FLOW - Provided is a data flow-parallel processing apparatus and method. The data flow-parallel processing apparatus may include a lower layer processing unit to identify a flow of inputted first data, a distribution unit to select, from among a plurality of upper layer processing units, an upper layer processing unit corresponding to the flow, and to transmit the first data to the selected upper layer processing unit, and an upper layer processing unit to process an upper layer packet of the first data, based on a local memory corresponding to the flow from among a plurality of local memories. | 06-23-2011 |
20110246954 | METHOD AND APPARATUS FOR ANALYZING FAULT BEHAVIOR - An apparatus for analyzing a fault behavior, includes a satisfiability modulo theories (SMT) conversion block for performing SMT conversion with respect to a protocol state machine diagram and a sequence diagram of a software design model. Further, the apparatus for analyzing the fault behavior includes an SMT processing block for performing a SMT processing using respective logic formulas corresponding to the protocol state machine diagram and the sequence diagram and outputted from the SMT conversion block, and determining whether the result of the SMT processing is satisfied to output an occurrable behavior scenario when the result of the SMT processing is satisfied. | 10-06-2011 |
20110260965 | APPARATUS AND METHOD OF USER INTERFACE FOR MANIPULATING MULTIMEDIA CONTENTS IN VEHICLE - Disclosed are provided an apparatus and a method of a user interface for manipulating multimedia contents for a vehicle. An apparatus of a user interface for manipulating multimedia contents for a vehicle according to an embodiment of the present invention includes: a transparent display module displaying an image including one or more multimedia objects; an ultrasonic detection module detecting a user indicating means by using an ultrasonic sensor in a 3D space close to the transparent display module; an image detection module tracking and photographing the user indicating means; and a head unit judging whether or not any one of the multimedia objects is selected by the user indicating means by using information received from at least one of the image detection module and the ultrasonic detection module and performing a control corresponding to the selected multimedia object. | 10-27-2011 |
20130163595 | PACKET CLASSIFICATION APPARATUS AND METHOD FOR CLASSIFYING PACKET THEREOF - Disclosed is a packet processing device which includes a packet processor Classifying a packet according to a region needed to search and providing a search key corresponding to the classified packet; a search key distributing unit decoding the search key to classify an address-based search key and a content-based search key; an address-based content addressable memory (hereinafter, referred to as CAM) unit performing an address-based search operation according to the address-based search key; a content-based CAM unit performing a content-based search operation according to the content-based search key; and a packet forwarding unit processing an output toward a port corresponding to a packet transferred from the packet processor, based on results searched according to the address-based search operation and the content-based search operation. | 06-27-2013 |
20130219498 | MOBILE TERMINAL HAVING SECURITY DIAGNOSIS FUNCTIONALITY AND METHOD OF MAKING DIAGNOSIS ON SECURITY OF MOBILE TERMINAL - A mobile terminal having security diagnosis functionality and a method of making a diagnosis on the security of the mobile terminal are provided. The mobile terminal includes a system check unit, an interface unit, a blacklist check unit, and a security diagnosis unit. The system check unit collects the basic information of the mobile terminal by performing a system check on the mobile terminal. The interface unit provides the basic information of the mobile terminal to a user and receives a control command from the user. The blacklist check unit checks whether at least one application installed in the mobile terminal is present in a blacklist registered on a server. The security diagnosis unit checks whether an abnormality has occurred in the corresponding application based on results of the comparison between the basic information of the mobile terminal with preset abnormality detection reference information and the control command. | 08-22-2013 |
20140123288 | NETWORK INTRUSION DETECTION APPARATUS AND METHOD USING PERL COMPATIBLE REGULAR EXPRESSIONS-BASED PATTERN MATCHING TECHNIQUE - A network intrusion detection apparatus and method that perform Perl Compatible Regular Expressions (PCRE)-based pattern matching on the payloads of packets using a network processor equipped with a Deterministic Finite Automata (DFA) engine. The network intrusion detection apparatus includes a network processor core for receiving packets from a network, and transmitting payloads of the received packets to a Deterministic Finite Automata (DFA) engine. A detection rule converter converts a PCRE-based detection rule, preset to detect an attack packet, into a detection rule including a pattern to which only PCRE grammar corresponding to the DFA engine is applied. The DFA engine performs PCRE pattern matching on the payloads of the packets based on the detection rule converted by the detection rule converter. | 05-01-2014 |
20140126371 | FLOW SWITCH AND OPERATING METHOD THEREOF - An exemplary embodiment of the present invention provides a flow switch, and an operating method thereof, and more particularly, to a flow switch for providing network virtualization, in which a quality of service (QoS) for a packet for each virtual machine is easily secured through flow information extracted from each of a plurality of packets when the plurality of packets generated by a plurality of virtual machines is input in a server virtualization environment, and an operating method thereof. | 05-08-2014 |
20140201738 | SWITCH AND METHOD FOR GUARANTEEING QUALITY OF SERVICE OF MULTI-TENANT CLOUD SERVICE AND SYSTEM HAVING THE SAME SWITCH - Provided are a method, apparatus, and system for providing a multi-tenant cloud service, which can guarantee quality of service (QOS) in units of flows and virtual machines (VMs). A dynamic virtual flow switch includes a switch flow agent configured to receive and store virtual machine QOS information about each of a plurality of virtual machines operating in a plurality of computer servers and flow QOS information about a flow generated by the virtual machine from a virtual flow controller and a flow processing unit configured to receive the flow generated by the virtual machine and determine a QOS priority of the flow based on the stored virtual machine QOS information of the virtual machine and flow QOS information of the flow. | 07-17-2014 |
20140337856 | DATA PARALLEL PROCESSING APPARATUS WITH MULTI-PROCESSOR AND METHOD THEREOF - The present invention suggests a data parallel processing device that performs parallel processing on input data by varying a flow ID generating manner depending on a loading degree of the processor in the multi-processor structure configured by processor array. The suggested device includes a flow ID generating unit which generates a flow ID for input data which is differentiated in accordance with a status of a buffer; a data allocating unit which allocates data having the same flow ID to a specified processor; and a data processing unit which sequentially processes data allocated to each processor so that the parallel processing performance is improved as compared with the related art. | 11-13-2014 |
20140375818 | DISTRIBUTING NETWORK CAMERA SYSTEM AND METHOD FOR OPERATING SAME - A distributed network camera system includes a network camera configured to be connected to a network; and a distributed media server configured to process video data provided by the network camera in a network node which is located close to the network camera. Further, the distributed network camera system includes a centralized management server configured to be connected to the network and manage the connection establishment between the distributed media server and the network camera and the operation state of the distributed media server. | 12-25-2014 |
20140376555 | NETWORK FUNCTION VIRTUALIZATION METHOD AND APPARATUS USING THE SAME - A network function virtualization device includes at least one network function virtual machine; and a network function flow switch configured to receive flows and to switch the flows to the at least one network function virtual machine, and a network functions virtualization method for applying the virtualized network function to the flows. | 12-25-2014 |
20150055775 | IMAGE PROCESSING APPARATUS AND OPERATION METHOD THEREOF - An exemplary embodiment provides an image processing apparatus, including: a first detector configured to detect a privacy image from a first image when the first image is input; a protection processor configured to scramble the privacy image to a privacy protection image using a scrambling key when the privacy image is detected; and an encryption processor configured to create a second image in which the first image including the privacy protection image is encrypted using an encryption key. | 02-26-2015 |
20150074166 | METHOD AND APPARATUS FOR PROCESSING MULTI-LAYER DATA - An apparatus for processing multi-layer data, the apparatus comprising: a lower layer switch configured to classify lower layer data based on frame or packet from multi-layer data having different properties for switching processing; and an upper layer switch configured to generate flows of the multi-layer data having different properties based on upper layer information or lower layer information. | 03-12-2015 |
Patent application number | Description | Published |
20110049572 | Semiconductor device and method for manufacturing of the same - The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) formed therewithin; a first ohmic electrode disposed on a central region of the semiconductor layer; a second ohmic electrode which is formed on the edge regions of the semiconductor layer in such a manner to be disposed to be spaced apart from the first ohmic electrodes, and have a ring shape surrounding the first ohmic electrode; and a Schottky electrode part which is formed on the central region to cover the first ohmic electrode and is formed to be spaced apart from the second ohmic electrode. | 03-03-2011 |
20110057231 | Semiconductor device and method for manufacturing of the same - The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer disposed on the base substrate; first ohmic electrodes disposed on a central region of the first semiconductor layer; a second ohmic electrode having a ring shape surrounding the first ohmic electrodes, on edge regions of the first semiconductor layer; a second semiconductor layer interposed between the first ohmic electrodes and the first semiconductor layer; and a Schottky electrode part which covers the first ohmic electrodes on the central regions, and is spaced apart from the second ohmic electrode. | 03-10-2011 |
20110057233 | Semiconductor component and method for manufacturing of the same - The present invention provides a semiconductor component. The semiconductor component in accordance with the present invention includes a lower layer including a low resistance layer and a high resistance layer with higher resistivity than the low resistance layer while surrounding a lateral surface of the low resistance layer; a source electrode disposed on a front surface of the high resistance layer; a gate structure disposed on a front surface of the low resistance layer; a drain structure disposed on a rear surface of the low resistance layer; and a base substrate surrounding the drain structure on a rear surface of the high resistance layer. | 03-10-2011 |
20110057234 | Semiconductor device and method for manufacturing of the same - Disclosed is a semiconductor device including: a base substrate; a semiconductor layer disposed on the base substrate; an ohmic electrode part which has ohmic electrode lines disposed in a first direction, on the semiconductor layer; and a Schottky electrode part which is disposed to be spaced apart from the ohmic electrode lines on the semiconductor layer and includes Schottky electrode lines disposed in the first direction, wherein the Schottky electrode lines and the ohmic electrode lines are alternately disposed in parallel, and the ohmic electrode part further includes first ohmic electrodes covered by the Schottky electrode lines on the semiconductor layer. | 03-10-2011 |
20110057257 | Semiconductor device and method for manufacturing the same - The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a recess structure formed thereon; a gate structure covering the recess structure; a source electrode and a drain electrode which are disposed to be spaced apart from each other with respect to the gate structure interposed therebetween, on the semiconductor layer, wherein the semiconductor layer having an upper layer whose thickness is increased toward a first direction facing the drain electrode from the gate structure. | 03-10-2011 |
20110057286 | Semiconductor device and method for manufacturing of the same - The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer which is disposed on the base substrate and has a front surface and a rear surface opposite to the front surface; first ohmic electrodes disposed on the front surface of the first semiconductor layer; a second ohmic electrode disposed on the rear surface of the first semiconductor layer; a second semiconductor layer interposed between the first semiconductor layer and the first ohmic electrodes; and a Schottky electrode part which covers the first ohmic electrodes on the front surface of the first semiconductor layer. | 03-10-2011 |
20110140121 | ENHANCEMENT NORMALLY OFF NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to an enhancement normally off nitride semiconductor device and a method of manufacturing the same. The method includes the steps of: forming a buffer layer on a substrate; forming a first nitride semiconductor layer on the buffer layer; forming a second nitride semiconductor layer on the first nitride semiconductor layer; etching a gate region above the second nitride semiconductor layer up to a predetermined depth of the first nitride semiconductor layer; forming an insulating film on the etched region and the second nitride semiconductor layer; patterning a source/drain region, etching the insulating film in the source/drain region, and forming electrodes in the source/drain region; and forming a gate electrode on the insulating film in the gate region. In this manner, the present invention provides a method of easily implementing a normally off enhancement semiconductor device by originally blocking 2DEG which is generated under a gate region. In addition, the present invention provides an enhancement normally off power semiconductor device with a simple and efficient driving circuit in a HEMT device. | 06-16-2011 |
20110254057 | NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING OF THE SAME - Disclosed herein is a nitride based semiconductor device. The nitride based semiconductor device includes: a base substrate; an epitaxial growth layer disposed on the base substrate and having a defect generated due to lattice disparity with the base substrate; a leakage current barrier covering the epitaxial growth layer while filling the defect; and an electrode part disposed on the epitaxial growth layer. | 10-20-2011 |
20130056797 | SEMICONDUCTOR DEVICE HAVING SCHOTTKY DIODE STRUCTURE - A semiconductor device including a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) generated within the semiconductor layer; a plurality of first ohmic electrodes which are disposed on the central region of the semiconductor layer and have island-shaped cross sections; a second ohmic electrode which is disposed on edge regions of the semiconductor layer; and a Schottky electrode part has first bonding portions bonded to the first ohmic electrodes, and a second bonding portion bonded to the semiconductor layer. A depletion region is provided to be spaced apart from the 2DEG when the semiconductor device is driven at an on-voltage and is provided to be expanded to the 2DEG when the semiconductor device is driven at an off-voltage, the depletion region being generated within the semiconductor layer by bonding the semiconductor layer and the second bonding portion. | 03-07-2013 |
20130102135 | 2DEG SCHOTTKY DIODE FORMED IN NITRIDE MATERIAL WITH A COMPOSITE SCHOTTKY/OHMIC ELECTRODE STRUCTURE AND METHOD OF MAKING THE SAME - A method for manufacturing a semiconductor device includes preparing a base substrate; forming a semiconductor layer on the base substrate; forming an ohmic electrode part having ohmic electrode lines, on the semiconductor layer; and forming a Schottky electrode part, which is disposed on the semiconductor layer to be spaced apart from the ohmic electrode lines and has Schottky electrode lines parallel to the ohmic electrode lines, wherein forming the ohmic electrode part further comprises forming an ohmic electrode plate connected to one end of the ohmic electrode lines, forming the Schottky electrode part further comprises forming a Schottky electrode plate connected one end of the Schottky electrode lines, and one line of the Schottky electrode lines is disposed between two of the ohmic electrode lines to thereby achieve an interdigited configuration in which the ohmic electrode part and the Schottky electrode part are formed. | 04-25-2013 |
Patent application number | Description | Published |
20110029266 | PROCESS, VOLTAGE, AND TEMPERATURE SENSOR - An integrated circuit includes a process sensor, a temperature sensor, and a voltage sensor. The process sensor is configured to sense a process parameter indicative of a semiconductor process by which the integrated circuit is formed and, based upon the sensed process parameter, to provide a characterization of the semiconductor process to the output of the process sensor. The temperature sensor is configured to provide an indication of a temperature of the integrated circuit to an output of the temperature sensor and the voltage sensor is configured to provide an indication of a power supply voltage level of the integrated circuit to an output of the voltage sensor. The output of the process sensor is coupled to at least one of the temperature sensor and the voltage sensor to compensate at least one of the indication of the temperature and the indication of the power supply voltage level. | 02-03-2011 |
20120034713 | PROCESS, VOLTAGE, TEMPERATURE SENSOR - An integrated circuit includes a process sensor, a temperature sensor, and a voltage sensor. The process sensor is configured to sense a process parameter indicative of a semiconductor process by which the integrated circuit is formed and, based upon the sensed process parameter, to provide a characterization of the semiconductor process to the output of the process sensor. The temperature sensor is configured to provide an indication of a temperature of the integrated circuit to an output of the temperature sensor and the voltage sensor is configured to provide an indication of a power supply voltage level of the integrated circuit to an output of the voltage sensor. The output of the process sensor is coupled to at least one of the temperature sensor and the voltage sensor to compensate at least one of the indication of the temperature and the indication of the power supply voltage level. | 02-09-2012 |
20140159767 | PROCESS SENSOR - A semiconductor process sensor to characterize a semiconductor process by which the semiconductor process sensor was formed. The semiconductor process sensor includes a constant reference voltage source to provide a constant reference voltage signal, a process sensing resistor, a constant current source, and an analog-to-digital converter. The process sensing resistor has a first terminal electrically coupled to the constant reference voltage source and a second terminal to provide a sensed voltage signal, the process sensing resistor having a resistance that is dependent on at least one variation in the semiconductor process used to form the semiconductor process sensor. The constant current source is electrically coupled to the second terminal of the process sensing resistor. The analog-to-digital converter is coupled to the second terminal of the process sensing resistor to provide at least one output signal characterizing the semiconductor process by which the semiconductor process sensor was formed. | 06-12-2014 |
Patent application number | Description | Published |
20110233520 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a semiconductor device including a base substrate; a semiconductor layer formed on the base substrate and having a mesa protrusion including a receiving groove; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer, the source electrode having a source leg and the drain electrode having a drain leg; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part received into the receiving groove. The mesa protrusion has a superlattice structure including at least one trench at an interface between the mesa protrusion and the source electrode and between the mesa protrusion and the drain electrode, respectively, and the source leg and the drain leg are received in the trench. | 09-29-2011 |
20110233612 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer. | 09-29-2011 |
20110233613 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There are provided a semiconductor device and a method for manufacturing the same. The semiconductor device according to the present invention includes a base substrate; a semiconductor layer that includes a receiving groove and a protrusion part formed on the base substrate, a first carrier injection layer and at least two insulating layers formed to traverse the first carrier injection layer formed in the semiconductor layer, and a second carrier injection layer spaced apart from the first carrier injection layer formed on the protrusion part; a source electrode and a drain electrode that are disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode that is insulated from the source electrode and the drain electrode and has a recess part recessed into the receiving groove, wherein the lowest end portion of the receiving groove contacts the uppermost layer of the first carrier injection layer and the insulating pattern disposed at the innermost side of the semiconductor layer among the insulating patterns traverses the entire layer forming the first carrier injection layer and is disposed at the outer side of both side end portions in the thickness direction of the receiving groove. | 09-29-2011 |
20110233623 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer having a receiving groove, a protrusion part, a first carrier injection layer, at least two insulating patterns, and a second carrier injection layer provided on the base substrate, the insulating patterns being disposed to traverse the first carrier injection layer and the second carrier injection layer being spaced apart from the first carrier injection layer and disposed on a lower portion of the protrusion part; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part recessed into the receiving groove, wherein a lowest portion of the receiving groove contacts an uppermost layer of the first carrier injection layer or is disposed above the uppermost layer thereof, and an insulating pattern, disposed at an innermost portion of the semiconductor layer among the insulating patterns, traverses the first carrier injection layer and is disposed at the outside of both sides of the receiving groove in a thickness direction thereof. | 09-29-2011 |
20120007049 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a nitride-based semiconductor device. The nitride-based semiconductor device includes: a base substrate having a diode structure; an epi-growth film disposed on the base substrate; and an electrode part disposed on the epi-growth film, wherein the diode structure includes: first-type semiconductor layers; and a second-type semiconductor layer which is disposed within the first-type semiconductor layers and has both sides covered by the first-type semiconductor layers. | 01-12-2012 |
20120007053 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a nitride-based semiconductor device. The nitride-based semiconductor device includes a base substrate having a PN junction structure, an epi-growth layer disposed on the base substrate, and an electrode unit disposed on the epi-growth layer. | 01-12-2012 |
20120088341 | Methods Of Manufacturing High Electron Mobility Transistors - The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer. | 04-12-2012 |
20130034939 | METHOD OF MANUFACTURING POWER DEVICE - A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region. | 02-07-2013 |
20140103352 | NITRIDE SEMICONDUCTOR AND FABRICATING METHOD THEREOF - The present disclosure relates to nitride semiconductor and a fabricating method thereof, and a nitride semiconductor according to an exemplary embodiment of the present disclosure includes a nitride based first and second electrode placed with a distance on a substrate, a nitride based channel layer which connects the first and second electrode, an insulating layer which covers the channel layer, and a third electrode which is formed to cover the insulating layer on the insulating layer. | 04-17-2014 |
Patent application number | Description | Published |
20120304703 | WASHING MACHINE - A washing machine having an improved structure which increases washing capacity without increasing the size of the washing machine. The washing machine includes a cabinet including an outer part and a cylindrical inner part connected to the outer part, a spin basket rotatably disposed in the inner part and including a bottom and a side wall extending from the bottom, a pulsator rotatably disposed in the spin basket, a motor provided under the spin basket, a clutch to selectively transmit power of the motor to the spin basket or the pulsator, a base plate to fix the clutch and the motor, and suspension members connecting the base plate to the upper portion of the cabinet. Wash water is stored within the spin basket and is not stored outside the spin basket during a washing cycle. | 12-06-2012 |
20130036774 | WASHING MACHINE - A washing machine includes a rotary tub having a diameter progressively increasing from a first end side thereof to a second end side thereof located opposite the first end side, dehydration holes arranged at the second end side of the rotary tub, and a dehydration hole switching unit to open and close the dehydration holes. The dehydration holes are opened depending on increase of a rate of rotation of the rotary tub. | 02-14-2013 |
20150033574 | WASHING MACHINE HAVING DRYING APPARATUS - A washing machine having a drying apparatus, which can perform a heated drying operation and shorten a drying time of laundry, is provided. The washing machine having a drying apparatus includes a top cover which is provided in an upper part of a body and has at least one air hole formed in a top surface thereof, a drying duct which is provided in the top cover to supply air heated by a heater provided thereinside to the air hole, and a rack member which is provided to be extractable from the body to hang laundry above the body. | 02-05-2015 |