Hizawa
Shunichi Hizawa, Matsumoto-Shi JP
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20130222472 | LIQUID EJECTING APPARATUS - A printer includes a recording head having a nozzle forming surface formed with nozzles adapted to eject liquid; a wiper having an outer surface of a cylindrical surface shape capable of absorbing the ink attached to the nozzle forming surface; a motor that is driven, when moving the wiper in a direction in which the outer surface reaches the nozzle forming surface and in a direction in which the outer surface is separated from the nozzle forming surface, and is also driven when rotating the wiper; and a contact member coming into contact with the outer surface of the wiper rotated along with driving of the motor. | 08-29-2013 |
Shunichi Hizawa, Nagano-Ken JP
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20110204091 | Liquid Ejecting Apparatus - A waste liquid absorption material is laid within a waste liquid receptacle, and a portion of the waste liquid absorption material into which liquid flows is heated, causing the temperature of that portion to rise. This makes it possible to instigate a temperature difference between one side and the other side of capillary tubes within the waste liquid absorption material through which the liquid permeates, which makes it easy for the liquid to move from the high-temperature side to the low-temperature side of the waste liquid absorption material due to the thermocapillary phenomenon. This in turn makes it possible to increase the speed at which the liquid is absorbed by the waste liquid absorption material. | 08-25-2011 |
Takeshi Hizawa, Sakura-Shi JP
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20110071307 | PROCESS FOR PRODUCING EPOXY (METHA)ACRYLATE - An object of the present invention is to provide a process for producing an epoxy (meth)acrylate safely with good productivity, and the invention provides a process for continuously producing an epoxy (meth)acrylate, containing causing a mixed liquid of a compound (A) having a carboxyl group and a (meth)acryloyl group and a compound (B) having an epoxy group to pass continuously and densely through a tubular microchannel formed in a heat-conducting reaction device, and reacting the carboxyl group of the compound (A) with the epoxy group of the compound (B), in which the tubular microchannel in the reaction device has a space size making a fluid cross-sectional area, through which the mixed liquid passes densely, of from 0.1 to 4.0 mm | 03-24-2011 |
20110087041 | PROCESS FOR PRODUCING URETHANE (METHA)ACRYLATE - An object of the present invention is to provide a process for producing a urethane (meth)acrylate safely with good productivity, and for achieving the object, the invention provides a process for continuously producing a urethane (meth)acrylate, containing causing a mixed liquid of a compound (A) having a hydroxyl group and a (meth)acryloyl group and a compound (B) having an isocyanate group to pass continuously and densely through a tubular microchannel formed in a heat-conducting reaction device, and reacting the hydroxyl group of the compound (A) with the isocyanate group of the compound (B), in which the tubular microchannel in the reaction device has a space size making a fluid cross-sectional area, through which the mixed liquid passes densely, of from 0.1 to 4.0 mm | 04-14-2011 |
Takeshi Hizawa, Chiba JP
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20130114369 | MICRO MIXER - Disclosed is a micro mixer which includes a mixing plate ( | 05-09-2013 |
Takeshi Hizawa, Mie JP
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20150200116 | CHEMICAL LIQUID TREATMENT APPARATUS AND CHEMICAL LIQUID TREATMENT METHOD - A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time. | 07-16-2015 |
Takeshi Hizawa, Mie-Gun JP
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20120094493 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure. | 04-19-2012 |
20140014142 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure. | 01-16-2014 |
20140061929 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to the present embodiment includes a semiconductor substrate. A lower-layer wiring is provided above a surface of the semiconductor substrate. An interlayer dielectric film is provided on the lower-layer wiring and includes a four-layer stacked structure. A contact plug contains aluminum. The contact plug is filled in a contact hole formed in the interlayer dielectric film in such a manner that the contact plug reaches the lower-layer wiring. Two upper layers and two lower layers in the stacked structure respectively have tapers on an inner surface of the contact hole. The taper of two upper layers and the taper of two lower layers have different angles from each other. | 03-06-2014 |
Takeshi Hizawa, Kanagawa JP
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20080231253 | Cumulative Chemical/Physical Phenomenon Detecting Apparatus - A sensitivity of a cumulative chemical/physical phenomenon detecting apparatus is improved. Prior to transferring charges at a sensing section to a floating diffusion section, the charges remaining at the sensing section are removed from the sensing section by a potential barrier formed between the sensing section and a charge injection adjusting section. | 09-25-2008 |