Patent application number | Description | Published |
20080222808 | Mattress Encasement For Preventing Bed Bug Escapement Via A Zipper Opening - A mattress encasement made of bug impervious fabric provides a zipper opening for removal of the mattress. A foam pad is stitched at an end of the zipper closure such that when the zipper is located at or near the end, a channel is provided to prevent or obstruct the escapement of bed bugs via the channel and out from a mattress encased by the mattress encasement. | 09-18-2008 |
20090049608 | MATTRESS ENCASEMENT FOR PREVENTING BED BUG ESCAPEMENT VIA A ZIPPER OPENING - A mattress encasement made of bug impervious fabric provides a zipper opening for removal of the mattress. A foam pad is stitched at an end of the zipper closure such that when the zipper is located at or near the end, a channel is provided to prevent or obstruct the escapement of bed bugs via the channel and out from a mattress encased by the mattress encasement. | 02-26-2009 |
20090271926 | MATTRESS ENCASEMENT FOR PREVENTING BED BUG ESCAPEMENT VIA A ZIPPER OPENING - A mattress encasement made of bug impervious fabric provides a zipper opening for removal of the mattress. A foam pad is stitched at an end of the zipper closure such that when the zipper is located at or near the end, a channel is provided to prevent or obstruct the escapement of bed bugs via the channel and out from a mattress encased by the mattress encasement. | 11-05-2009 |
20110010856 | MATTRESS ENCASEMENT FOR PREVENTING BED BUG ESCAPEMENT VIA A ZIPPER OPENING - A mattress encasement made of bug impervious fabric provides a zipper opening for removal of the mattress. A foam pad is stitched at an end of the zipper closure such that when the zipper is located at or near the end, a channel is provided to prevent or obstruct the escapement of bed bugs via the channel and out from a mattress encased by the mattress encasement. | 01-20-2011 |
20120023712 | MATTRESS ENCASEMENT FOR PREVENTING BED BUG ESCAPEMENT VIA A ZIPPER OPENING - A mattress encasement made of bug impervious fabric provides a zipper opening for removal of the mattress. A foam pad is stitched at an end of the zipper closure such that when the zipper is located at or near the end, a channel is provided to prevent or obstruct the escapement of bed bugs via the channel and out from a mattress encased by the mattress encasement. | 02-02-2012 |
20120186138 | INFLATABLE PORTABLE TREATMENT DEVICE - An inflatable, portable treatment device for the treatment of an item, such as fumigation and/or extermination of vermin creature. The item is to be placed in an inner area of the inflatable bladder. A fan positioned in the inner area may propel a chemical agent in the interior area. According to certain embodiments, a heating element may increase the temperature of the interior area. A power cord for the fan or heating element may be plugged into an electrical extension assembly that is connected to the treatment device and is configured to prevent or minimize gas and/or fumigant and/or pesticide vapor from escaping from the inner area. The opening may be sealed by closing an air seal. An airway assembly may be attached to the treatment device to deliver gas from a gas delivery source, such as a blower or gas tank, into the interior area. | 07-26-2012 |
20130326820 | ENCASEMENT FOR PREVENTING BED BUG ESCAPEMENT VIA A ZIPPER OPENING - The present technology provides an encasement comprising a fabric cover formed of bed bug impervious fabric. The encasement comprises an opening with a zipper mechanism disposed therein and operable to close the opening. The encasement also comprises a barrier attached to the fabric cover, extending along and opposite the zipper tracks. The encasement also comprises a channel between the barrier and said zipper tracks that receives a portion of the zipper head and becomes an enclosed channel when said zipper tracks are mated together. The channel has a confined space of a size to thwart bug movement along the channel. | 12-12-2013 |
Patent application number | Description | Published |
20090319631 | COMPOSING, BROWSING, REPLYING, FORWARDING E-MAIL - Method for composing, browsing, replying, forwarding e-mail's in an e-mail system and an e-mail client that can reduce e-mail traffic by not sending the original e-mail content in replying or forwarding e-mail's. In accordance with this invention, each e-mail has a Global-ID and each reply e-mail has a Reply-to-ID which corresponds to the Global-ID of the original e-mail, thereby the content of the original e-mail is not contained in the reply e-mail. During browsing e-mail's, the original e-mail is retrieved from repositories which stores sent and received e-mail's, and is incorporated into the browsed e-mail. | 12-24-2009 |
20090319632 | COMPOSING, BROWSING, REPLYING, FORWARDING E-MAIL - Method for composing, browsing, replying, forwarding e-mail's in an e-mail system and an e-mail client that can reduce e-mail traffic by not sending the original e-mail content in replying or forwarding e-mail's. In accordance with this invention, each e-mail has a Global-ID and each reply e-mail has a Reply-to-ID which corresponds to the Global-ID of the original e-mail, thereby the content of the original e-mail is not contained in the reply e-mail. During browsing e-mail's, the original e-mail is retrieved from repositories which stores sent and received e-mail's, and is incorporated into the browsed e-mail. | 12-24-2009 |
Patent application number | Description | Published |
20120280258 | Nitride Light-Emitting Diode with a Current Spreading Layer - A nitride light-emitting diode is provided including a current spreading layer. The current spreading layer includes a first layer having a plurality of distributed insulating portions configured to have electrical current flow therebetween; and a second layer including interlaced at least one substantially undoped nitride semiconductor layer and at least one n-type nitride semiconductor layer configured to spread laterally the electrical current from the first layer | 11-08-2012 |
20130187125 | GALLIUM-NITRIDE-BASED LIGHT EMITTING DIODES WITH MULTIPLE POTENTIAL BARRIERS - A light emitting diode (LED) includes an active layer having one or more multilayer potential barriers and at least one well layer. Each multilayer potential barrier includes interlacing first and second InAlGaN thin layers. The first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced. | 07-25-2013 |
20150048379 | Light Emitting Diode and Manufacturing Method Therefor - Disclosed are a light emitting diode having an n-doped ohm contact buffer layer and a manufacturing method therefor. In the present invention, a highly n-doped ohm contact buffer layer with an electronic concentration up to 1×10 | 02-19-2015 |
20150053920 | LED with Current Spreading Layer and Fabrication Method - A lighting emitting diode including: an n side layer and a p side layer formed by nitride semiconductors respectively; an active layer comprising a nitride semiconductor is between the n side layer and the p side layer; wherein, the n-side layer is successively laminated by an extrinsically-doped buffer layer and a compound multi-current spreading layer; the compound multi-current spreading layer is successively-laminated by a first current spreading layer, a second current spreading layer and a third current spreading layer; the first current spreading layer and the third current spreading layer are alternatively-laminated layers comprising a u-type nitride semiconductor layer and an n-type nitride semiconductor layer; the second current spreading layer is a distributed insulation layer formed on the n-type nitride semiconductor layer; and the first current spreading layer is adjacent to the extrinsically-doped buffer layer; and the third current spreading layer is adjacent to the active layer. | 02-26-2015 |
20150270439 | Nitride Light Emitting Diode and Fabrication Method Thereof - An epitaxial structure of light emitting diode with a current modulation layer, and more specifically, a high-resistivity material is injected to change the current conduction path, and implementation of the main structure is to grow a high-resistivity material (e.g., In | 09-24-2015 |
20150311389 | Nitride Light Emitting Diode and Fabrication Method Thereof - A nitride light-emitting diode including: a substrate with sub-micro patterns over the surface, which is divided into a growth region and a non-growth region; a growth blocking layer, formed in the non-growth region of the substrate for blocking epitaxial growth in the non-growth region of the substrate; a light-emitting epitaxial layer, comprising an n-type layer, a light-emitting layer and a p-type layer, formed in the growth region of the substrate, which extends to the non-growth region through lateral epitaxy and covers the growth blocking layer; wherein, the refractive index of the growth blocking layer is less than that of the light-emitting epitaxial layer and the growth blocking layer forms undulating morphology along the sub-micro patterns of the substrate, thus increasing light extraction interface of LED, generating refractive index difference between the light-emitting epitaxial layer and the light extraction interface and improving light extraction efficiency. | 10-29-2015 |
Patent application number | Description | Published |
20140256118 | METHOD FOR FORMING POLYSILICON USING HIGH ENERGY RADIATION SOURCE - A method for forming polysilicon using high energy sources of radiation includes the steps of providing a laser system which has at least two laser sources with different wavelengths, a dichroic mirror, a reflecting mirror and a substrate; generating a laser beam by the laser sources to irradiate towards the substrate perpendicularly by the dichroic mirror and the reflecting mirror which are faced to the laser source and meet the laser sources at a certain angle; placing the reflecting mirror above the dichroic mirror; placing the a semiconductor thin-film material on the substrate. The advantages of the above technical solution are that as follows: the crystallization rate of poly-silicon is effectively increased; the usage frequency of the excimer laser is reduced; the cost thereof is reduced; the throughput of annealing is affectively improved. | 09-11-2014 |
20140308803 | DEVICE AND METHOD FOR IMPROVING CRYSTALLIZATION - The invention discloses a method and a device of improving crystallization ratio of polysilicon, which is applied to the process that the amorphous silicon layer converts into the polysilicon layer. More specifically, superposing at least two pulse laser beams into a superposed pulse laser beam. The pulse width of the superposed pulse laser beam is larger than each pulse laser beam. Next, utilizing the superposed pulse laser beam to irradiate onto the amorphous silicon layer for transforming the amorphous silicon layer into polysilicon layer. The superposed pulse laser beam irradiates onto the surface of the amorphous silicon layer. The amorphous silicon layer is transformed into the polysilicon layer. Consequently, the crystallization ratio of polysilicon is improved. | 10-16-2014 |
20140322925 | METHOD OF LASER ANNEALING PROCESS - The present disclosure discloses a method of laser annealing process, wherein the surface of the semiconductor structure on a substrate is scanned by a laser annealing device, and the said laser annealing device comprises a laser source and the optical instruments. The invention comprises the following steps: generating a laser beam by the laser source, and the laser beam is irradiating on a mirror, the route thereof changed by 90 degrees and converging the laser beam by the optical instrument thereafter. By this method, an improved annealing process which saved the chamber, reduced the likelihood of the oxidation of silicon film in the annealing process, improved the electrical property of silicon substrate, reduced the weight of machine and further simplified the maintenance machine. | 10-30-2014 |