Patent application number | Description | Published |
20080258229 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes an N-type MOS transistor and a P-type MOS transistor. The N-type MOS transistor has a first gate insulating film and a first gate electrode. The P-type MOS transistor has a second gate insulating film and a second gate electrode. The first gate insulating film and the second gate insulating film are made of silicon oxynitride, and the first gate insulating film and the second gate insulating film are different from each other in nitrogen concentration profile. | 10-23-2008 |
20090002994 | Light Irradiation Device - The light irradiation device of this invention intends to further facilitate an assembling procedure and to stabilize the quality as a product. | 01-01-2009 |
20090129121 | ILLUMINATION DEVICE - A lighting device is provided that surface-emits the light evenly with less number of luminous bodies by comprising a transparent body | 05-21-2009 |
20090181549 | METHOD FOR FORMING A GATE INSULATING FILM - In formation of a gate insulating film made of a high dielectric constant metal silicate, atomic layer deposition (ALD) is performed by setting exposure time to a precursor containing a metal or the like to saturation time of a deposition rate by a surface adsorption reaction and by setting exposure time to an oxidizing agent to time required for a composition of a metal oxide film to reach 97% or more of a stoichiometric value. | 07-16-2009 |
20090197427 | IMPURITY-ACTIVATING THERMAL PROCESS METHOD AND THERMAL PROCESS APPARTUS - A thermal cycle includes: increasing a temperature from an initial temperature to a temperature T | 08-06-2009 |
20090197428 | IMPURITY-ACTIVATING THERMAL PROCESS METHOD AND THERMAL PROCESS APPARATUS - An impurity-activating thermal process is performed after a target is subjected to an impurity introduction step. In this thermal process, while a spike RTA process including a holding period for holding a temperature at a predetermined temperature is performed, at least one iteration of millisecond annealing at a temperature higher than the predetermined temperature is performed during the holding period of the spike RTA process. | 08-06-2009 |
20100014286 | LIGHT IRRADIATION APPARATUS - The invention provides a light irradiation apparatus that can adjust widening/narrowing of a light irradiation area and can guide almost whole of light emitted from an LED to the light irradiation area. | 01-21-2010 |
20100033080 | COAXIAL LIGHT IRRADIATION DEVICE - The light irradiation device is for inspecting a surface of an object | 02-11-2010 |
20100093113 | SEMICONDUCTOR MANUFACTURING APPARATUS - A semiconductor manufacturing apparatus includes: an ion source and a beam line for introducing an ion beam into a target film which is formed over a wafer with an insulating film interposed therebetween; a flood gun for supplying the target film with electrons for neutralizing charges contained in the ion beam; a rotating disk for subjecting the target film to mechanical scanning of the ion beam in two directions composed of r-θ directions; a rear Faraday cage for measuring the current density produced by the ion beam; a disk-rotational-speed controller and a disk-scanning-speed controller for changing the scanning speed of the target film; and a beam current/current density measuring instrument for controlling, according to the current density, the scanning speed of the target film. | 04-15-2010 |
20100142207 | OPTICAL UNIT AND LIGHT IRRADIATING DEVICE - This invention provides an optical unit that does not require an operation of aligning the axis of the rod lens and the axis of the light condensing lens, and that can improve an assembling workability and reduce a cost with less number of forming processes and less number of components due to its downsized structure. In order to realize this optical unit provided are a light condensing section | 06-10-2010 |
20110086500 | IMPURITY IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS - An impurity is implanted by ion implantation into an object to be processed. The ion implantation is performed using an ion beam which is diverged after being temporarily converged. | 04-14-2011 |
20110278606 | LED LIGHT EMITTING DEVICE - In order to provide an LED light emitting device that can easily control a color temperature of white light, the LED light emitting device is provided with a plurality of types of light emitting parts that: respectively have LED elements that emit ultraviolet radiation or violet color visible light, and phosphors that absorb the ultraviolet radiation or violet color visible light to emit colored light; and emit the colored light, wherein: the colored light emitted by the plurality of types of light emitting parts become white light when all mixed with each other; the LED elements of the plurality of types of light emitting parts are all the same ones, and mounted on a single base material; and two or more light emitting parts overlap with each other in their parts. | 11-17-2011 |
20110298083 | SOI WAFER, METHOD FOR PRODUCING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An SOI wafer including: a supporting substrate | 12-08-2011 |
20140106521 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a method for manufacturing a semiconductor device which includes, on a wafer which has a notch, a plurality of transistors parallel with and perpendicular to a notch direction extending between the center of the wafer and the notch, the method including: preparing the wafer having the front surface which has Off angle of at least 2 degrees and at most 2.8 degrees from plane in a direction in which Twist angle relative to the notch direction is at least 12.5 degrees and at most 32.5 degrees; and doping impurities into the front surface of the wafer in a direction perpendicular to the front surface. | 04-17-2014 |