Patent application number | Description | Published |
20110037065 | DEVICE COMPRISING POSITIVE HOLE INJECTION TRANSPORT LAYER, METHOD FOR PRODUCING THE SAME AND INK FOR FORMING POSITIVE HOLE INJECTION TRANSPORT LAYER - A device having an easy production process and capable of achieving a long lifetime. The device has a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes. The positive hole injection transport layer contains a reaction product of a molybdenum complex or tungsten complex. | 02-17-2011 |
20110163327 | DEVICE COMPRISING POSITIVE HOLE INJECTION TRANSPORT LAYER, METHOD FOR PRODUCING THE SAME AND INK FOR FORMING POSITIVE HOLE INJECTION TRANSPORT LAYER - A device capable of having an easy production process and achieving a long lifetime. The device has a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes. The positive hole injection transport layer has a transition metal-containing nanoparticle containing at least a transition metal compound including a transition metal oxide, a transition metal and a protecting agent, or at least the transition metal compound including the transition metal oxide, and the protecting agent. | 07-07-2011 |
20120138916 | DEVICE COMPRISING POSITIVE HOLE INJECTION TRANSPORT LAYER, METHOD FOR PRODUCING THE SAME AND INK FOR FORMING POSITIVE HOLE INJECTION TRANSPORT LAYER - A device including a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes, wherein the positive hole injection transport layer contains a reaction product of a transition metal complex or complexes, and wherein at least one or more kinds of transition metals selected from the group consisting of vanadium, rhenium and platinum, or a mixture of molybdenum and one or more kinds of transition metals selected from the group consisting of vanadium, rhenium and platinum is contained in a central metal or metals of the transition metal complex or complexes. | 06-07-2012 |
20120211705 | DEVICE COMPRISING POSITIVE HOLE INJECTION TRANSPORT LAYER, METHOD FOR PRODUCING THE SAME AND INK FOR FORMING POSITIVE HOLE INJECTION TRANSPORT LAYER - The present invention is to provide a device capable of having an easy production process and achieving a long lifetime. A device comprising a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes, wherein the positive hole injection transport layer comprises a transition metal-containing nanoparticle containing at least a transition metal compound including a transition metal oxide, a transition metal and a protecting agent, or at least the transition metal compound including the transition metal oxide, and the protecting agent. | 08-23-2012 |
Patent application number | Description | Published |
20080318158 | Underlayer Coating Forming Composition for Lithography Containing Polysilane Compound - There is provided an underlayer coating for lithography that is used in lithography process of the manufacture of semiconductor devices, that can be used as a hardmask, and that causes no intermixing with photoresists; and a composition for forming the underlayer coating. | 12-25-2008 |
20100022089 | Method for manufacturing semiconductor device using quadruple-layer laminate - There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A). | 01-28-2010 |
20110117746 | COATING COMPOSITION AND PATTERN FORMING METHOD - It is an object to provide a coating composition applicable to “reversal patterning” and suitable for forming a film covering a resist pattern. The object is accomplished by a coating composition for lithography comprising an organopolysiloxane, a solvent containing the prescribed organic solvent as a main component, and a quaternary ammonium salt or a quaternary phosphonium salt; or a coating composition for lithography comprising a polysilane, a solvent containing the prescribed organic solvent as a main component, and at least one additive selected from a group consisting of a crosslinking agent, a quaternary ammonium salt, a quaternary phosphonium salt, and a sulfonic acid compound, wherein the polysilane has, at a terminal thereof, a silanol group or a silanol group together with a hydrogen atom. | 05-19-2011 |
20120077345 | CARBAZOLE NOVOLAK RESIN - There is provided a resist underlayer film having heat resistance that is used for a lithography process in the production of semiconductor devices, and a high refractive index film having transparency that is used for an electronic device. A polymer comprising a unit structure of Formula ( | 03-29-2012 |
20120142195 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR LITHOGRAPHY INCLUDING RESIN CONTAINING ALICYCLIC RING AND AROMATIC RING - There is provided a resist underlayer film having both heat resistance and etching selectivity. A composition for forming a resist underlayer film for lithography, comprising a reaction product (C) of an alicyclic epoxy polymer (A) with a condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B). The alicyclic epoxy polymer (A) may include a repeating structural unit of Formula (1): | 06-07-2012 |
20130122710 | CARBAZOLE NOVOLAK RESIN - There is provided a resist underlayer film having heat resistance that is used for a lithography process in the production of semiconductor devices, and a high refractive index film having transparency that is used for an electronic device. A polymer comprising a unit structure of Formula (1): | 05-16-2013 |
20130189533 | RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING POLYETHER STRUCTURE-CONTAINING RESIN - There is provided a resist underlayer film forming composition for forming a resist underlayer film providing heat resistance properties and hardmask characteristics. A resist underlayer film forming composition for lithography, comprising: a polymer containing a unit structure of Formula (1): | 07-25-2013 |
20130280913 | COMPOSITION FOR FORMING A RESIST UNDERLAYER FILM INCLUDING HYDROXYL GROUP-CONTAINING CARBAZOLE NOVOLAC RESIN - There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio: | 10-24-2013 |
20140106570 | COMPOSITION FOR FORMING ORGANIC HARD MASK LAYER FOR USE IN LITHOGRAPHY CONTAINING POLYMER HAVING ACRYLAMIDE STRUCTURE - Whereas, conventionally, ashing had been used at the time of removal, the present invention provides a material for forming an organic hard mask that can be removed by an alkaline aqueous solution, and thus can be expected to reduce damage to the substrate at the time of the removal. A composition for forming an organic hard mask layer comprising: a polymer (A) including a structural unit of Formula (1) and a structural unit of Formula (2); a crosslinkable compound (B) including at least two of blocked isocyanate groups, methylol groups, or C | 04-17-2014 |
20140235059 | DIARYLAMINE NOVOLAC RESIN - A novel diarylamine novolac resin such as a phenylnaphthylamine novolac resin, and further a resist underlayer film-forming composition in which the resin is used in a lithography process for manufacturing a semiconductor device. A polymer including a unit structure (A) of Formula (1): | 08-21-2014 |
20140235060 | RESIST UNDERLAYER FILM-FORMING COMPOSITION WHICH CONTAINS ALICYCLIC SKELETON-CONTAINING CARBAZOLE RESIN - There is provided a resist underlayer film used in lithography process that has a high n value and a low k value, and can effectively reduce reflection of light having a wavelength of 193 nm from the substrate in a three-layer process in which the resist underlayer film is used in combination with a silicon-containing intermediate layer. A resist underlayer film-forming composition used in lithography process including: a polymer containing a unit structure including a product obtained by reaction of a condensed heterocyclic compound and a bicyclo ring compound. The condensed heterocyclic compound is a carbazole compound or a substituted carbazole compound. The bicyclo ring compound is dicyclopentadiene, substituted dicyclopentadiene, tetracyclo[4.4.0.1 | 08-21-2014 |
20150044876 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING PHENYLINDOLE-CONTAINING NOVOLAC RESIN - A composition for forming a resist underlayer film having heat resistance, which is used for a lithography process of semiconductor device production. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1): | 02-12-2015 |
20150184018 | RESIST UNDERLAYER FILM FORMING COMPOSITION THAT CONTAINS NOVOLAC RESIN HAVING POLYNUCLEAR PHENOL - There is provided a composition for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance, and achieves excellent planarizing properties for a semiconductor substrate surface having level differences or irregular portions. A resist underlayer film-forming composition including a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst. The phenol novolac resin preferably contains a unit structure of Formula (1), a unit structure of Formula (2), a unit structure of Formula (3), a unit structure of Formula (4), or a combination of these unit structures: | 07-02-2015 |
20150194312 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING ORGANIC UNDERLAYER FILM FORMING COMPOSITION FOR SOLVENT DEVELOPMENT LITHOGRAPHY PROCESS - A method of manufacturing a semiconductor device by use of an underlayer film material can form a good pattern without deteriorating the resolution limit. A method of manufacturing a semiconductor device, including: forming an organic underlayer film on a semiconductor substrate; forming an inorganic hard mask on organic underlayer film; forming a resist film on inorganic hard mask; performing irradiation of light or electron beam and solvent development to form a resist pattern; etching inorganic hard mask using resist pattern; etching organic underlayer film using patterned inorganic hard mask; and processing semiconductor substrate using patterned organic underlayer film, wherein the organic underlayer film is an organic underlayer film obtained by applying and heating an organic underlayer film forming composition containing a compound including an organic group having a functional group selected from group consisting of epoxy group, isocyanate group, blocked isocyanate group, and benzocyclobutene ring group, and an organic solvent. | 07-09-2015 |
20150212418 | RESIST UNDERLAYER FILM FORMING COMPOSITION - A resist underlayer film forming composition including: a polymer having any one or more repeating structural units of Formulas (1a), (1b), and (1c): | 07-30-2015 |
20150316850 | RESIST UNDERLAYER FILM-FORMING COMPOSITION COMPRISING CARBONYL-CONTAINING POLYHYDROXY AROMATIC RING NOVOLAC RESIN - There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted C | 11-05-2015 |
20150378260 | RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING ARYL SULFONATE SALT HAVING HYDROXYL GROUP - There is provided a resist underlayer film-forming composition to reduce the amount of sublimate generated from the resist underlayer film at baking process and to suppress aging and have high storage stability. A resist underlayer film-forming composition including an aryl sulfonic acid salt compound having a hydroxy group of Formula (1): | 12-31-2015 |
20160068709 | NOVOLAC RESIN-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION USING BISPHENOL ALDEHYDE - Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1): | 03-10-2016 |