Chia-Yeh
Chia-Yeh Huang, Hsinchu City TW
Patent application number | Description | Published |
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20140021601 | SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR STRUCTURE THEREOF - A semiconductor manufacturing method includes providing a carrier; forming a first photoresist layer; forming plural core portions; removing the first photoresist layer; forming a second photoresist layer; forming a plurality of connection portions, each of the plurality of connection portions includes a first connection layer and a second connection layer and connects to each of the core portions to form a hybrid bump, wherein each of the first connection layers comprises a base portion, a projecting portion and an accommodating space, each base portion comprises an upper surface, each projecting portion is protruded to the upper surface and located on top of each core portion, each accommodating space is located outside each projecting portion, the second connection layers cover the projecting portions and the upper surfaces, and the accommodating spaces are filled by the second connection layers; removing the second photoresist layer to reveal the hybrid bumps. | 01-23-2014 |
20140141606 | SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR STRUCTURE THEREOF - A semiconductor manufacturing method includes providing a carrier; forming a first photoresist layer; forming plural core portions; removing the first photoresist layer; forming a second photoresist layer; forming a plurality of connection portions, each of the plurality of connection portions includes a first connection layer and a second connection layer and connects to each of the core portions to form a hybrid bump, wherein each of the first connection layers comprises a base portion, a projecting portion and an accommodating space, each base portion comprises an upper surface, each projecting portion is protruded to the upper surface and located on top of each core portion, each accommodating space is located outside each projecting portion, the second connection layers cover the projecting portions and the upper surfaces, and the accommodating spaces are filled by the second connection layers; removing the second photoresist layer to reveal the hybrid bumps. | 05-22-2014 |
Chia-Yeh Hung, Kweishang TW
Patent application number | Description | Published |
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20090008258 | Porous catalyst structure and its manufacturing method - A porous catalyst structure with a high specific surface area comprising a porous substrate with a catalyst layer thereon is provided. The porous catalyst structure can be prepared by a process comprising depositing a metallic layer onto the surface of a porous, metallic substrate by electroplating, and optionally oxidizing the metallic layer into the metal oxide layer. Any conductive porous metallic substrate can be used as the substrate of the subject invention, and the metallic layer may comprise any suitable metal(s) and/or metal oxide(s) with desired catalytic function(s). | 01-08-2009 |
20110064631 | HYDROGEN GENERATOR AND THE APPLICATION OF THE SAME - A hydrogen generator essentially composed of a first medium is provided, comprising: a reforming zone, a preheating zone and a heat source. The reforming zone is used for containing a reforming catalyst so as to perform a steam reforming reaction of a hydrogen-producing raw material to generate hydrogen; and the heat source provides heat to the preheating zone and reforming zone, so that the hydrogen-producing raw material is firstly preheated in the preheating zone and then performs the steam reforming reaction in the reforming zone. The reforming zone and preheating zone are divided with a shortest interval of at least about 0.5 mm with the first medium, wherein the first medium has a thermal conductivity (K) of at least about 60 W/m-K. | 03-17-2011 |
Chia-Yeh Lee, San Jose, CA US
Patent application number | Description | Published |
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20150145803 | REDUCING TOUCH SENSOR PANEL POWER CONSUMPTION - Reducing power consumption in a touch screen. In some examples, a first level of touch accuracy can be determined, and a first portion of the touch screen can be operated in a first mode corresponding to the first level of touch accuracy. In some examples, a second level of touch accuracy can be determined, and a second portion of the touch screen can be operated in a second mode corresponding to the second level of touch accuracy. The first and/or second levels of touch accuracy can be determined based on an application running on a device including the touch screen and/or a user interface displayed on the touch screen. In some examples, in the first and/or second modes, the respective portions of the touch screen can transition between a touch sensing phase and a display phase at different transition frequencies and/or can sense touch at different ratios of touch sensors. | 05-28-2015 |