Patent application number | Description | Published |
20080201476 | Persistence Of Inter-Application Communication Patterns And Behavior Under User Control - An end-user or administrator is allowed to couple portlets in a portal through user interface events taking place on the portal display itself. When the portal is displayed, if the user actuates a control corresponding to a property in a portlet, a menu of actions that can be performed with that data by other portlets is provided to the user. In addition to this “conventional” manner, an alternative manner of actuating the component is provided to the user such that if the user actuates the control in this alternative manner, the user is provided the option of making the chosen action “persistent,” so that the next time the control is actuated by the user, or the associated property is otherwise produced, the chosen action is performed automatically, without requiring the user to choose an action. | 08-21-2008 |
20080263090 | Enabling Interactive Integration of Network-Accessible Applications in a Content Aggregation Framework - Enabling network-accessible applications to be integrated into content aggregation frameworks (such as portals) and to become dynamically interactive through proxying components (such as proxying portlets), thereby providing run-time cooperation and data sharing. | 10-23-2008 |
20080301641 | Management of Heterogeneous Software Artifacts Through a Common Representation - A method for managing a configuration of heterogeneous software artifacts through a common central configuration representation includes adding a plurality of software artifacts from an initial software solution to a heterogeneous configuration tool. Using this heterogeneous configuration tool, artifact-level configuration parameters are extracted out of selected software artifacts by the heterogeneous configuration tool. The extracted artifact-level configuration parameters are then presented in a single representation. A subset of the presented extracted artifact-level configuration parameters is mapped to a set of solution-level parameters, which are then exposed in a subsequent software solution. Thereafter, parameters for one or more of the solution-level parameters, which are used by the subsequent software solution, are exposed. These parameters for the subsequent software solution are then mapped back to the artifact-level configuration parameters of the subsequent software solution. | 12-04-2008 |
20080320467 | Generically Managing the Configuration of Heterogeneous Software Artifacts - A method for managing a configuration of heterogeneous software artifacts uses a common central configuration representation. An artifact of an unknown type, from an initial software solution, is submitted to a solution configuration tool. The solution configuration tool sends a request to a solution architect for locations of configuration files within the artifact. For each artifact whose configuration file locations have been requested from the solution architect, the solution configuration tool determines if each corresponding configuration file is a property file or an Extensible Markup Language (XML) file. If the corresponding configuration file is an XML file, then the solution architect provides a first and second xPath for locating the names and values of the configuration parameters in the XML configuration file. The configuration file and configuration parameter locator information is then stored in a configuration locator file. Information in the configuration locator file is used to introspect configuration parameters from the artifacts and store these generically in a central configuration file. Solution-level parameters are then defined and mapped to artifact-level parameters for use in configuring subsequent software solutions instantiated from the initial software solution. | 12-25-2008 |
20120136916 | Enabling Interactive Integration of Network-Accessible Applications in a Content Aggregation Framework - Enabling network-accessible applications to be integrated into content aggregation frameworks (such as portals) and to become dynamically interactive through proxying components (such as proxying portlets), thereby providing run-time cooperation and data sharing. | 05-31-2012 |
Patent application number | Description | Published |
20110256920 | GAMING DEVICE HAVING SEQUENTIAL ACTIVATIONS OF A GAME AND REPLAY OF PREVIOUS ACTIVATIONS OF THE GAME - A gaming device including a plurality of reels with a plurality of symbols on each of the reels. At least one and preferably a plurality of the symbols on the primary reels are designated as tracking or back symbols. A tracking symbol is a symbol that, when generated on a reel, causes the gaming device to flag the outcome of the current and all tracking spins in a memory storage device. A back symbol is a symbol that, when generated on a reel, causes the gaming device to retrieve the flagged outcomes of each flagged spin and to re-display the outcomes in a sequential manner and to provide the awards associated with the outcomes to the player. An additional embodiment of the invention automatically flags all spins of the gaming device for retrieval and display upon the generation of a back or bonus symbol. The gaming device determines if an award is associated with one or more of the symbols generated on the reels and provides any determined award to the player. | 10-20-2011 |
20110263315 | GAMING DEVICE HAVING SEQUENTIAL ACTIVATIONS OF A GAME AND REPLAY OF PREVIOUS ACTIVATIONS OF THE GAME - A gaming device including a plurality of reels with a plurality of symbols on each of the reels. At least one and preferably a plurality of the symbols on the primary reels are designated as tracking or back symbols. A tracking symbol is a symbol that, when generated on a reel, causes the gaming device to flag the outcome of the current and all tracking spins in a memory storage device. A back symbol is a symbol that, when generated on a reel, causes the gaming device to retrieve the flagged outcomes of each flagged spin and to re-display the outcomes in a sequential manner and to provide the awards associated with the outcomes to the player. An additional embodiment of the invention automatically flags all spins of the gaming device for retrieval and display upon the generation of a back or bonus symbol. The gaming device determines if an award is associated with one or more of the symbols generated on the reels and provides any determined award to the player. | 10-27-2011 |
20130040721 | GAMING DEVICE HAVING SEQUENTIAL ACTIVATIONS OF A GAME AND REPLAY OF PREVIOUS ACTIVATIONS OF THE GAME - A gaming device including a plurality of reels with a plurality of symbols on each of the reels. At least one of the symbols on the primary reels are designated as tracking or back symbols. A tracking symbol is a symbol that, when generated on a reel, causes the gaming device to flag the outcome of the current and all tracking spins. A back symbol is a symbol that, when generated on a reel, causes the gaming device to retrieve the flagged outcomes of each flagged spin and to re-display the outcomes in a sequential manner and to provide the awards associated with the outcomes to the player. | 02-14-2013 |
20140045575 | GAMING DEVICE HAVING SEQUENTIAL ACTIVATIONS OF A GAME AND REPLAY OF PREVIOUS ACTIVATIONS OF THE GAME - A gaming device including a plurality of reels with a plurality of symbols on each of the reels. At least one and preferably a plurality of the symbols on the primary reels are designated as tracking or back symbols. A tracking symbol is a symbol that, when generated on a reel, causes the gaming device to flag the outcome of the current and all tracking spins in a memory storage device. A back symbol is a symbol that, when generated on a reel, causes the gaming device to retrieve the flagged outcomes of each flagged spin and to re-display the outcomes in a sequential manner and to provide the awards associated with the outcomes to the player. An additional embodiment of the invention automatically flags all spins of the gaming device for retrieval and display upon the generation of a back or bonus symbol. The gaming device determines if an award is associated with one or more of the symbols generated on the reels and provides any determined award to the player. | 02-13-2014 |
Patent application number | Description | Published |
20100158512 | Centrally Managed, Self-Survivable Wavelength Division Multiplexed Passive Optical Network - A centrally-managed, colorless, bi-directional wavelength division multiplexed passive optical network (WDM-PON) architecture. The WDM-PON architecture is self-survivable, and can protect network failures in, for example, distribution/feeder fiber, remote node and laser failure. The WDM-PON architecture requires only N-wavelength channels for N optical network units. | 06-24-2010 |
20100278538 | MILLIMETER WAVE WIRELESS COMMUNICATION SYSTEM - A wireless communication system adapted to transmit data between two locations, for example between a plurality of processors and memory. Digitally coded millimeter waves can be used to transfer data between antenna arrays. A global optical clock can provide network coherence, frequency self-tracking, and a local oscillator signal for data digital symbol coding/decoding and symbol up-down conversion to/from the millimeter wavelength carrier. | 11-04-2010 |
20110206383 | SYSTEMS AND METHODS FOR PROVIDING AN OPTICAL INFORMATION TRANSMISSION SYSTEM - The present invention describes systems and methods of providing optical information transmission systems. An exemplary embodiment of the present invention includes a precoder configured to differentially encode a binary data signal, a duobinary encoder configured to encode the differentially encoded binary data signal as a three-level duobinary signal, an electrical-to-optical conversion unit configured to convert the three-level duobinary signal into a two-level optical signal, and an optical upconversion unit configured to modulate the two-level optical signal onto a higher frequency optical carrier signal and transmit the modulated higher frequency optical carrier signal onto an optical transmission medium. | 08-25-2011 |
Patent application number | Description | Published |
20110242816 | LIGHTWEIGHT HEAT SINKS AND LED LAMPS EMPLOYING SAME - A heat sink comprises a heat sink body, which in some embodiments is a plastic heat sink body, and a thermally conductive layer disposed over the heat sink body. In some embodiments the thermally conductive layer comprises a copper layer. A light emitting diode (LED)-based lamp comprises the aforementioned heat sink and an LED module including one or more LED devices in which the LED module is secured with and in thermal communication with the heat sink. Some such LED-based lamps may have an A-line bulb configuration or an MR or PAR configuration. Disclosed method embodiments comprise forming a heat sink body and disposing a thermally conductive layer on the heat sink body. The forming may comprise molding the heat sink body, which may be plastic. In some method embodiments the heat sink body includes fins and the disposing includes disposing the thermally conductive layer over the fins. | 10-06-2011 |
20110242817 | LIGHTWEIGHT HEAT SINKS AND LED LAMPS EMPLOYING SAME - A heat sink includes a thermally conductive layer comprising at least one of fullerenes and nanotubes disposed in a polymeric host. The thermally conductive layer may be disposed on a heat sink body, which may be thermally insulating and/or plastic, and may include surface area enhancing heat radiating structures, such as fins, with the thermally conductive layer being disposed over at least the surface area enhancing heat radiating structures. A light emitting diode (LED)-based lamp embodiment includes the heat sink and an LED module including one or more LED devices secured with and in thermal communication with the heat sink. A method embodiment includes forming the heat sink body and disposing the thermally conductive layer on the heat sink body. The disposing may comprise spray coating. An external energy field may be applied during spray coating to impart a non-random orientation to nanotubes in the polymeric host. | 10-06-2011 |
20120080699 | LIGHTWEIGHT HEAT SINKS AND LED LAMPS EMPLOYING SAME - A heat sink comprises a heat sink body, a reflective layer disposed over the heat sink body that has reflectivity greater than 90% for light in the visible spectrum, and a light transmissive protective layer disposed over the reflective layer that is light transmissive for light in the visible spectrum. The heat sink body may comprise a structural heat sink body and a thermally conductive layer disposed over the structural heat sink body where the thermally conductive layer has higher thermal conductivity than the structural heat sink body and the reflective layer is disposed over the thermally conductive layer. A light emitting diode (LED)-based lamp comprises the aforesaid heat sink and an LED module secured with and in thermal communication with the heat sink. The LED-based lamp may have an A-line bulb configuration, or may comprise a directional lamp in which the heat sink defines a hollow light-collecting reflector. | 04-05-2012 |
20120182737 | LED LIGHT ENGINE/HEAT SINK ASSEMBLY - According to a first embodiment, a light emitting diode (LED) light engine is described. The light emitting diode includes one or more LED devices disposed on a front side of an LED light engine substrate. A heat sink having a mating receptacle for the LED light engine is also provided. The LED light engine substrate and the mating receptacle of the heat sink define a tapered fitting by which the LED light engine is retained in the mating receptacle of the heat sink. | 07-19-2012 |
20130279174 | METHODS FOR TAILORING THE PROPERTIES OF A REFLECTIVE COATING - Methods are provided for forming a reflective coating by applying a precursor material onto the substrate; soft curing the precursor material at a first curing energy level; and thereafter, hard curing the precursor material at a second curing energy level having a higher amount of energy than the first curing energy level to form the reflective coating. Other methods are provided for forming a reflective coating a surface of a plastic substrate by heating the surface of the plastic substrate to a deposition temperature, applying a polymeric resin onto the heated surface, and crosslinking the polymeric resin to form the reflective coating. The polymeric resin can include a cross-linkable powder, a cross-linker, and a pigment, with the deposition temperature being about 10° C. or greater than the melting point of the cross-linkable binder. Lighting apparatus formed from such methods are also provided. | 10-24-2013 |
Patent application number | Description | Published |
20110127899 | OXIDE MULTILAYERS FOR HIGH TEMPERATURE APPLICATIONS AND LAMPS - Disclosed herein are optical interference multilayer coatings employing a high refractive index material comprising a NbTaZr oxide. Such coatings provide enhanced retention of favorable optical and physical properties at high temperatures. Also disclosed herein are lamps comprising a light-transmissive envelope, at least a portion of the surface of the light-transmissive envelope being provided with the optical interference multilayer coating noted above. Such coatings, when used on lamps, may advantageously offer improved energy efficiencies for such lamps. | 06-02-2011 |
20110148272 | HIGH EFFICIENCY GLASS HALOGEN LAMP WITH INTERFERENCE COATING - The disclosure provides a light-transmissive glass halogen filament tube with a filament light source having a coil concentricity ratio of not greater than 20% disposed therein, the filament tube having a multi-layer optical interference coating deposited on the outer surface thereof that transmits visible radiation from about 400-750 nm and reflects infra red radiation from about 800-2500 nm back to the filament for re-absorption, the coated filament tube exhibiting an LPW gain of at least 26%. | 06-23-2011 |
20130021794 | LIGHTING APPARATUS WITH A LIGHT SOURCE COMPRISING LIGHT EMITTING DIODES - Embodiments of a lighting apparatus with a light source using one or more light emitting diodes (LEDs) to generate light. In one embodiment, the lighting apparatus comprises a light diffusing assembly that generates an optical intensity profile consistent with incandescent lamps. The light diffusing assembly comprises an envelope and a reflector element having frusto-conical member and an aperture element disposed therein. The lighting apparatus can also comprise a heat dissipating assembly with a plurality of heat dissipating elements disposed annularly about the envelope. In one example, the heat dissipating elements are spaced apart from the envelope to promote convective heat dissipation. | 01-24-2013 |
20140070690 | LIGHTING APPARATUS WITH A LIGHT SOURCE COMPRISING LIGHT EMITTING DIODES - Embodiments of a lighting apparatus with a light source using one or more light emitting diodes (LEDs) to generate light. In one embodiment, the lighting apparatus comprises a light diffusing assembly that generates an optical intensity profile consistent with incandescent lamps. The light diffusing assembly comprises an envelope and a reflector element having frusto-conical member and an aperture element disposed therein. The lighting apparatus can also comprise a heat dissipating assembly with a plurality of heat dissipating elements disposed radially about the envelope. In one example, the heat dissipating elements are spaced apart from the envelope to promote convective heat dissipation. | 03-13-2014 |
20140264418 | COLOR STABLE RED-EMITTING PHOSPHORS - A process for synthesizing a color stable Mn | 09-18-2014 |
20140268655 | COLOR STABLE RED-EMITTING PHOSPHORS - A color stable Mn4+ doped phosphor of formula I, | 09-18-2014 |
20140327026 | COLOR STABLE RED-EMITTING PHOSPHORS - A process for synthesizing a color stable Mn | 11-06-2014 |
Patent application number | Description | Published |
20120126347 | PACKAGES AND METHODS FOR PACKAGING - Packaged integrated devices and methods of forming the same are provided. In one embodiment, a packaged integrated device includes a package substrate, a package lid, and an integrated circuit or microelectromechanical systems (MEMS) device. The package lid is mounted to a first surface of the package substrate using an epoxy, and the package lid and the package substrate define a package interior. The package lid includes an interior coating suited to good adhesion with the epoxy, and an exterior coating suited to RF shielding, where the materials of the interior and exterior coatings are different. In one example, the interior lid coating is nickel whereas the exterior lid coating is tin. | 05-24-2012 |
20140332947 | PACKAGES AND METHODS FOR PACKAGING - Packaged integrated devices and methods of forming the same are provided. In one embodiment, a packaged integrated device includes a package substrate, a package lid, and an integrated circuit or microelectromechanical systems (MEMS) device. The package lid is mounted to a first surface of the package substrate using an epoxy, and the package lid and the package substrate define a package interior. The package lid includes an interior coating suited to good adhesion with the epoxy, and an exterior coating suited to RF shielding, where the materials of the interior and exterior coatings are different. In one example, the interior lid coating is nickel whereas the exterior lid coating is tin. | 11-13-2014 |
Patent application number | Description | Published |
20110178163 | MIR-182 IN THE DIAGNOSIS AND TREATMENT OF CANCER - The present disclosure provides methods of determining the levels of BRCA1 in a cell, altering the levels of BRCA1 in a cell, determining the likelihood of developing cancer, and determining the prognosis of a patient with cancer using miR-182 and analogs thereof. Importantly, the invention also provides methods of determining whether a patient should be treated with PARP inhibitors, improving PARP therapy in cancer, as well as methods for selecting and improving genotoxic therapies. Also featured are methods of treating patients with cancers based on the expression levels of miR-182. The invention also features compositions comprising miR-182 and analogs thereof, antagomirs of mIR-182 and analogs thereof, in combination with PARP inhibitors and genotoxic agents. | 07-21-2011 |
20120059043 | THERAPEUTIC AND DIAGNOSTIC STRATEGIES - The present invention encompasses the finding that microRNAs (miRNAs) regulate certain key proteins involved in DNA repair. In some embodiments, a miRNA suppresses levels and/or activity of one or more DNA repair proteins. In some such embodiments, such suppression renders cells hypersensitive to certain DNA damage agents (e.g., γ-irradiation and genotoxic drugs, among others). The present invention provides various reagents and methods associated with these findings including, among other things, strategies for treating cell proliferative disorders, certain diagnostic systems, etc. | 03-08-2012 |
Patent application number | Description | Published |
20120009220 | Low Antigen-dose Immunization for Maximizing T-helper Cell 1 (Th1) Immunity Against a Pathogen - Disclosed are compositions, kits, and methods for inducing an immune response against disease. The dosage of antigen contained or utilized in the presently disclosed compositions, kits, and methods is substantially lower than dosages conventionally used in the field. The compositions, kits, and methods may be utilized to induce a cell-mediated response, such as a T-helper cell response, and/or a humoral response against a pathogen or a disease. In some embodiments, the compositions, kits, and methods may be utilized to induce preferentially a Th1 response versus other types of immune responses such as a Th2 response. | 01-12-2012 |
20120328644 | Low Antigen-dose Immunization for Maximizing T-helper Cell 1 (Th1) Immunity Against a Pathogen - Disclosed are compositions, kits, and methods for inducing an immune response against disease. The dosage of antigen contained or utilized in the presently disclosed compositions, kits, and methods is substantially lower than dosages conventionally used in the field. The compositions, kits, and methods may be utilized to induce a cell-mediated response, such as a T-helper cell response, and/or a humoral response against a pathogen or a disease. In some embodiments, the compositions, kits, and methods may be utilized to induce preferentially a Th1 response versus other types of immune responses such as a Th2 response. | 12-27-2012 |
Patent application number | Description | Published |
20130320798 | SYSTEM AND METHOD FOR REDUCING COGGING TORQUE IN AN INTERIOR PERMANENT MAGNET MOTOR - An interior permanent magnet motor comprises a rotor assembly disposed within a stator assembly. The rotor assembly is configured for rotating about a central axis relatively to the stator assembly. The rotor assembly defines a plurality of magnet pockets within the rotor assembly along a radially outboard surface of the rotor assembly. Each magnet pocket is substantially rectangular in cross-sectional shape and is configured to facilitate insertion of a permanent magnet into, and retention of the permanent magnet within, the magnet pocket. The rotor assembly further defines at least one rotor notch disposed between each magnet pocket and the radially outboard surface. | 12-05-2013 |
20140260683 | NON-CONTACTING TORQUE SENSOR WITH INJECTION MOLDED MAGNETS - A non-contacting torque sensor comprises a magnetic flux generating rotor and a magnetic flux detecting probe. The magnetic flux generating rotor is disposed axially between a first stator and a second stator and has a radially outboard surface and plurality of N pole magnets and S pole magnets alternatingly disposed proximate the radially outboard surface. Each stator has a plurality of stator teeth, with each one of said plurality of stator teeth corresponding to a unique one of said plurality of N pole magnets and S pole magnets. The magnetic flux detecting probe is disposed at a distance from the radially outboard surface and configured for detecting variations in magnetic flux produced by the magnetic flux generating rotor to detect a change of a relative twist between the magnetic flux generating rotor and the first stator and second stator. The N pole magnets and S pole magnets are injection molded. | 09-18-2014 |
20140265707 | INTERIOR PERMANENT MAGNET MOTOR WITH SHIFTED ROTOR LAMINATIONS - A rotor comprises a first rotor lamination and a second rotor lamination. The first rotor lamination and the second rotor lamination are configured for defining, when joined into rotor assembly, a central axis of rotation and a plurality of interior magnet pockets disposed symmetrically about the central axis of rotation, each pocket of the plurality of interior magnet pockets is configured for housing and retaining a permanent magnet. A method of forming a rotor comprises forming a first rotor lamination and a second rotor lamination, rotating the second rotor lamination about an axis of symmetry of the second rotor lamination; and mating the first rotor lamination to the second rotor lamination such that a first notch of the first rotor lamination is disposed adjacent to the first notch of the second rotor lamination. | 09-18-2014 |
20140265961 | MOTOR CONTROL SYSTEM TO COMPENSATE FOR TORQUE RIPPLE - A motor control system is provided. The motor control system includes a motor having plurality of motor harmonics, and a torque ripple compensation controller in communication with the motor. The torque ripple compensation controller is configured to determine a harmonic ripple current for a corresponding one of the plurality of motor harmonics. The harmonic ripple current is based on a reference q-axis current and a reference d-axis current. The torque ripple compensation controller is configured to add the harmonic ripple current for each of the plurality of motor harmonics together to determine the ripple compensating current. | 09-18-2014 |
20150022044 | SYSTEM AND METHOD FOR REDUCING TORQUE RIPPLE IN AN INTERIOR PERMANENT MAGNET MOTOR - An interior permanent magnet motor comprises a rotor assembly disposed within a stator assembly. The rotor assembly is configured for rotating about a central axis relatively to the stator assembly. The rotor assembly defines a plurality of magnet pockets within the rotor assembly along a radially outboard surface of the rotor assembly. Each magnet pocket is substantially rectangular in cross-sectional shape, and each magnet pocket is configured to facilitate insertion of a plurality of permanent magnets into and retention of the plurality of permanent magnets within, the magnet pocket. The rotor assembly further comprises a plurality of permanent magnet segments disposed in each magnet pocket. | 01-22-2015 |
Patent application number | Description | Published |
20110073964 | SEMICONDUCTOR DEVICE WITH OXYGEN-DIFFUSION BARRIER LAYER AND METHOD FOR FABRICATING SAME - Methods and apparatus are provided for fabricating a transistor. The transistor comprises a gate stack overlying a semiconductor material. The gate stack comprises a deposited oxide layer overlying the semiconductor material, an oxygen-diffusion barrier layer overlying the deposited oxide layer, a high-k dielectric layer overlying the oxygen-diffusion barrier layer, and an oxygen-gettering conductive layer overlying the high-k dielectric layer. The oxygen-diffusion barrier layer prevents diffusion of oxygen from the deposited oxide layer to the oxygen-gettering conductive layer. | 03-31-2011 |
20120104515 | TRANSISTORS AND SEMICONDUCTOR DEVICES WITH OXYGEN-DIFFUSION BARRIER LAYERS - Embodiments of transistors comprise a gate stack overlying a semiconductor material. The gate stack comprises a deposited oxide layer overlying the semiconductor material, an oxygen-diffusion barrier layer overlying the deposited oxide layer, a high-k dielectric layer overlying the oxygen-diffusion barrier layer, and a conductive material (e.g., an oxygen-gettering conductive material) overlying the high-k dielectric layer. When the conductive material is an oxygen-gettering conductive material, the oxygen-diffusion barrier layer prevents diffusion of oxygen from the deposited oxide layer to the oxygen-gettering conductive material. | 05-03-2012 |
20130126986 | GERMANIUM OXIDE FREE ATOMIC LAYER DEPOSITION OF SILICON OXIDE AND HIGH-K GATE DIELECTRIC ON GERMANIUM CONTAINING CHANNEL FOR CMOS DEVICES - A semiconductor device including a germanium containing substrate including a gate structure on a channel region of the semiconductor substrate. The gate structure may include a silicon oxide layer that is in direct contact with an upper surface of the germanium containing substrate, at least one high-k gate dielectric layer in direct contact with the silicon oxide layer, and at least one gate conductor in direct contact with the high-k gate dielectric layer. The interface between the silicon oxide layer and the upper surface of the germanium containing substrate is substantially free of germanium oxide. A source region and a drain region may be present on opposing sides of the channel region. | 05-23-2013 |
20140061819 | GERMANIUM OXIDE FREE ATOMIC LAYER DEPOSITION OF SILICON OXIDE AND HIGH-K GATE DIELECTRIC ON GERMANIUM CONTAINING CHANNEL FOR CMOS DEVICES - A semiconductor device including a germanium containing substrate including a gate structure on a channel region of the semiconductor substrate. The gate structure may include a silicon oxide layer that is in direct contact with an upper surface of the germanium containing substrate, at least one high-k gate dielectric layer in direct contact with the silicon oxide layer, and at least one gate conductor in direct contact with the high-k gate dielectric layer. The interface between the silicon oxide layer and the upper surface of the germanium containing substrate is substantially free of germanium oxide. A source region and a drain region may be present on opposing sides of the channel region. | 03-06-2014 |
20140106550 | ION IMPLANTATION TUNING TO ACHIEVE SIMULTANEOUS MULTIPLE IMPLANT ENERGIES - A method of ion implantation is disclosed. A beam of ions is accelerated to a first energy level. The beam of ions is decelerated from the first energy level to produce a contamination beam of ions via an ion collision process. The ions of the contamination beam are implanted in a substrate to obtain a selected dopant profile in the substrate. | 04-17-2014 |
20140117409 | METHOD AND STRUCTURE FOR BODY CONTACTED FET WITH REDUCED BODY RESISTANCE AND SOURCE TO DRAIN CONTACT LEAKAGE - A semiconductor device and method of making same. The device includes a substrate comprising a semiconductor layer on an insulating layer, the semiconductor layer including a semiconductor body having a body contact region and an abutting switching region; a bridged gate over the semiconductor body, the bridged gate having a bridge gate portion and an abutting gate portion, the bridge gate portion comprising a multilayer first gate stack and the gate portion comprising a multilayer second gate stack comprising the gate dielectric layer on the semiconductor body; first and second source/drains formed in the switching region on opposite sides of the channel; and wherein a first work function difference between the bridge portion and the body contact region is different from a second work function difference between the gate portion and the channel region. | 05-01-2014 |
20140191325 | Fin-Shaped Field Effect Transistor (FINFET) Structures Having Multiple Threshold Voltages (Vt) and Method of Forming - Various embodiments include fin-shaped field effect transistor (finFET) structures that enhance work function and threshold voltage (Vt) control, along with methods of forming such structures. The finFET structures can include a p-type field effect transistor (PFET) and an n-type field effect transistor (NFET). In some embodiments, the PFET has fins separated by a first distance and the NFET has fins separated by a second distance, where the first distance and the second distance are distinct from one another. In some embodiments, the PFET or the NFET include fins that are separated from one another by non-uniform distances. In some embodiments, the PFET or the NFET include adjacent fins that are separated by distinct distances at their source and drain regions. | 07-10-2014 |
Patent application number | Description | Published |
20100166746 | HIGH POTENCY RECOMBINANT ANTIBODIES, METHODS FOR PRODUCING THEM AND USE IN CANCER THERAPY - The present invention contemplates improved recombinant anti-tumor antibodies having faster Kon and faster Koff rates, resulting in a uniform tumor penetrance, as compared to the same recombinant anti-tumor antibody without said faster Kon and faster Koff rates, and methods of improving the same. | 07-01-2010 |
20100292441 | Antibodies that specifically bind to GMAD - The present invention relates to antibodies and related molecules that immunospecifically bind to GMAD. Such antibodies have uses, for example, in the prevention and treatment of both insulin- and non insulin-dependent diabetes mellitus (i.e. Type I and Type II diabetes) and other related disorders. The invention also relates to nucleic acid molecules encoding anti-GMAD antibodies, vectors and host cells containing these nucleic acids, and methods for producing the same. The present invention relates to methods and compositions for preventing, detecting, diagnosing, treating or ameliorating a disease or disorder, especially diabetes and other related disorders, comprising administering to an animal, preferably a human, an effective amount of one or more antibodies or fragments or variants thereof, or related molecules, that immunospecifically bind to GMAD. | 11-18-2010 |
20140072577 | ANTIBODIES THAT SPECIFICALLY BIND STAPHYLOCOCCUS AUREUS ALPHA TOXIN AND METHODS OF USE - Herein provided are compositions, methods of manufacture and methods of use pertaining to anti-alpha toxin antibodies and fragments. | 03-13-2014 |
20150023966 | COMBINATION THERAPIES USING ANTI-PSEUDOMONAS PSL AND PCRV BINDING MOLECULES - This disclosure relates to combination therapies comprising anti- | 01-22-2015 |
Patent application number | Description | Published |
20090130111 | Method of Identifying Membrane Ig Specific Antibodies and Use Thereof for Targeting Immunoglobulin-Producing Precursor Cells - The present invention relates to the discovery of antibodies that bind to novel epitopes present on membrane-anchored immunoglobulins and which bind to these novel epitopes on the surface of B cells and plasma cells. In addition, the antibodies of the present invention can mediate ADCC and can be useful to deplete those B cells and plasma cells expressing the novel epitopes of the invention. The antibodies of the present invention can be useful for the treatment of B cell-mediated diseases and diseases caused by monoclonal expansion of B cells. Accordingly the present invention also provides compositions and methods for the prevention, management, treatment or amelioration of B cell-mediated diseases and diseases caused by monoclonal expansion of B cells. | 05-21-2009 |
20120141463 | Method Of Identifying Membrane Ig Specific Antibodies And Use Thereof For Targeting Immunoglobulin-Producing Precursor Cells - The present invention relates to the discovery of antibodies that bind to novel epitopes present on membrane-anchored immunoglobulins and which bind to these novel epitopes on the surface of B cells and plasma cells. In addition, the antibodies of the present invention can mediate ADCC and can be useful to deplete those B cells and plasma cells expressing the novel epitopes of the invention. The antibodies of the present invention can be useful for the treatment of B cell-mediated diseases and diseases caused by monoclonal expansion of B cells. Accordingly the present invention also provides compositions and methods for the prevention, management, treatment or amelioration of B cell-mediated diseases and diseases caused by monoclonal expansion of B cells. | 06-07-2012 |
20140348839 | MODIFIED POLYPEPTIDES FOR BISPECIFIC ANTIBODY SCAFFOLDS - The technology relates in part to engineered antibodies. In particular, multispecific engineered antibodies. Such antibodies can be utilized for diagnostic and therapeutic applications in some aspects. | 11-27-2014 |
20140363429 | BINDING MOLECULES SPECIFIC FOR HER3 AND USES THEREOF - The present invention relates to antibodies and antigen binding fragments thereof that bind the extracellular domain of the HER3 receptor and inhibit various HER3 receptor related functions via ligand-dependent and/or ligand-independent mechanisms. Also provided are compositions with increased half-life. In addition, the invention provides compositions and methods for diagnosing and treating diseases associated with HER3 mediated signal transduction. | 12-11-2014 |
Patent application number | Description | Published |
20120129199 | COMPOSITIONS, KITS AND METHODS FOR IN VITRO ANTIGEN PRESENTATION, ASSESSING VACCINE EFFICACY, AND ASSESSING IMMUNOTOXICITY OF BIOLOGICS AND DRUGS - Nanoparticle-based compositions, assays, kits, methods and platforms for delivering an antigen (peptides, proteins) or a nucleic acid encoding an antigen to professional APCs (PAPCs) result in the generation of autologous APCs that present a natural peptide repertoire of the antigen for use in assessing the efficacy of a vaccine (e.g., a cytotoxic T lymphocyte (CTL) response to a particular antigen) or other therapy or intervention (cell-based therapy, adjuvant therapy, etc.). The compositions, kits, assays and methods also can be used for delivering a drug or biologic or portion thereof to APCs for assessing the immunogenicity of drugs and biologics. The composition, kits, assays and methods involve the combined use of MHC targeting, universal DR binding peptides (e.g., PADRE, HA) with charged (e.g., positively-charged) highly branched polymeric dendrimers (e.g., PAMAM and other dendrimers) as vehicles for the targeted delivery of nucleic acids, peptides, biologics, drugs, or polypeptides to APCs, giving rise to a new nanoparticle-based method for assessing the immune response (CTL response) to a vaccination or other therapy or intervention, or for assessing the immunogenicity of a biologic or drug. Targeted delivery of nucleic acids, peptides, biologics, drugs, or polypeptides to APCs for effective expression and processing generates more physiologically relevant target antigens for evaluation of cell-mediated immune responses to vaccination, for example, and provides a low-cost approach for rapid generation of reagents and development of assay systems for more accurate profiling of immunological responses to infection, immunization, and other therapies or interventions. Immunoevaluation kits using targeted nanoparticle-based antigen delivery are described herein. | 05-24-2012 |
Patent application number | Description | Published |
20120153390 | TRANSISTORS WITH ISOLATION REGIONS - A transistor device is described that includes a source, a gate, a drain, a semiconductor material which includes a gate region between the source and the drain, a plurality of channel access regions in the semiconductor material on either side of the gate, a channel in the semiconductor material having an effective width in the gate region and in the channel access regions, and an isolation region in the gate region. The isolation region serves to reduce the effective width of the channel in the gate region without substantially reducing the effective width of the channel in the access regions. Alternatively, the isolation region can be configured to collect holes that are generated in the transistor device. The isolation region may simultaneously achieve both of these functions. | 06-21-2012 |
20120319127 | CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER - A current aperture vertical electron transistor (CAVET) with ammonia (NH | 12-20-2012 |
20130056744 | Semiconductor Devices with Guard Rings - Semiconductor devices with guard rings are described. The semiconductor devices may be, e.g., transistors and diodes designed for high-voltage applications. A guard ring is a floating electrode formed of electrically conducting material above a semiconductor material layer. A portion of an insulating layer is between at least a portion of the guard ring and the semiconductor material layer. A guard ring may be located, for example, on a transistor between a gate and a drain electrode. A semiconductor device may have one or more guard rings. | 03-07-2013 |
20130088280 | HIGH POWER SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INCREASED RELIABILITY - An electronic component includes a depletion-mode transistor, an enhancement-mode transistor, and a resistor. The depletion-mode transistor has a higher breakdown voltage than the enhancement-mode transistor. A first terminal of the resistor is electrically connected to a source of the enhancement-mode transistor, and a second terminal of the resistor and a source of the depletion-mode transistor are each electrically connected to a drain of the enhancement-mode transistor. A gate of the depletion-mode transistor can be electrically connected to a source of the enhancement-mode transistor. | 04-11-2013 |
20130264578 | N-POLAR III-NITRIDE TRANSISTORS - An N-polar III-N transistor includes a III-N buffer layer, a first III-N barrier layer, and a III-N channel layer, the III-N channel layer having a gate region and a plurality of access regions on opposite sides of the gate region. The compositional difference between the first III-N barrier layer and the III-N channel layer causes a conductive channel to be induced in the access regions of the III-N channel layer. The transistor also includes a source, a gate, a drain, and a second III-N barrier layer between the gate and the III-N channel layer. The second III-N barrier layer has an N-face proximal to the gate and a group-III face opposite the N-face, and has a larger bandgap than the III-N channel layer. The lattice constant of the first III-N barrier layer is within 0.5% of the lattice constant of the buffer layer. | 10-10-2013 |
20140001557 | SEMICONDUCTOR DEVICES WITH INTEGRATED HOLE COLLECTORS | 01-02-2014 |
20140015066 | SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INTEGRATED CURRENT LIMITERS - An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, and a gate electrode of the high-voltage depletion-mode transistor is electrically coupled to the source electrode of the low-voltage enhancement-mode transistor. The on-resistance of the enhancement-mode transistor is less than the on-resistance of the depletion-mode transistor, and the maximum current level of the enhancement-mode transistor is smaller than the maximum current level of the depletion-mode transistor. | 01-16-2014 |
20140094010 | METHOD OF FORMING ELECTRONIC COMPONENTS WITH INCREASED RELIABILITY - An electronic component includes a depletion-mode transistor, an enhancement-mode transistor, and a resistor. The depletion-mode transistor has a higher breakdown voltage than the enhancement-mode transistor. A first terminal of the resistor is electrically connected to a source of the enhancement-mode transistor, and a second terminal of the resistor and a source of the depletion-mode transistor are each electrically connected to a drain of the enhancement-mode transistor. A gate of the depletion-mode transistor can be electrically connected to a source of the enhancement-mode transistor. | 04-03-2014 |
20140231823 | ELECTRODES FOR SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - A III-N semiconductor HEMT device includes an electrode-defining layer on a III-N material structure. The electrode-defining layer has a recess with a first sidewall proximal to the drain and a second sidewall proximal to the source, each sidewall comprising a plurality of steps. A portion of the recess distal from the III-N material structure has a larger width than a portion of the recess proximal to the III-N material structure. An electrode is in the recess, the electrode including an extending portion over the first sidewall. A portion of the electrode-defining layer is between the extending portion and the III-N material structure. The first sidewall forms a first effective angle relative to the surface of the III-N material structure and the second sidewall forms a second effective angle relative to the surface of the III-N material structure, the second effective angle being larger than the first effective angle. | 08-21-2014 |
20140231929 | TRANSISTORS WITH ISOLATION REGIONS - A transistor device is described that includes a source, a gate, a drain, a semiconductor material which includes a gate region between the source and the drain, a plurality of channel access regions in the semiconductor material on either side of the gate, a channel in the semiconductor material having an effective width in the gate region and in the channel access regions, and an isolation region in the gate region. The isolation region serves to reduce the effective width of the channel in the gate region without substantially reducing the effective width of the channel in the access regions. Alternatively, the isolation region can be configured to collect holes that are generated in the transistor device. The isolation region may simultaneously achieve both of these functions. | 08-21-2014 |
20140299940 | SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INTEGRATED CURRENT LIMITERS - An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, and a gate electrode of the high-voltage depletion-mode transistor is electrically coupled to the source electrode of the low-voltage enhancement-mode transistor. The on-resistance of the enhancement-mode transistor is less than the on-resistance of the depletion-mode transistor, and the maximum current level of the enhancement-mode transistor is smaller than the maximum current level of the depletion-mode transistor. | 10-09-2014 |
20140377930 | METHOD OF FORMING ELECTRONIC COMPONENTS WITH INCREASED RELIABILITY - An electronic component includes a depletion-mode transistor, an enhancement-mode transistor, and a resistor. The depletion-mode transistor has a higher breakdown voltage than the enhancement-mode transistor. A first terminal of the resistor is electrically connected to a source of the enhancement-mode transistor, and a second terminal of the resistor and a source of the depletion-mode transistor are each electrically connected to a drain of the enhancement-mode transistor. A gate of the depletion-mode transistor can be electrically connected to a source of the enhancement-mode transistor. | 12-25-2014 |
20150021552 | III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER - A transistor includes a III-N layer structure comprising a III-N channel layer between a III-N barrier layer and a p-type III-N layer. The transistor further includes a source, a drain, and a gate between the source and the drain, the gate being over the III-N layer structure. The p-type III-N layer includes a first portion that is at least partially in a device access region between the gate and the drain, and the first portion of the p-type III-N layer is electrically connected to the source and electrically isolated from the drain. When the transistor is biased in the off state, the p-type layer can cause channel charge in the device access region to deplete as the drain voltage increases, thereby leading to higher breakdown voltages. | 01-22-2015 |
20150054117 | SEMICONDUCTOR DEVICES WITH GUARD RINGS - Semiconductor devices with guard rings are described. The semiconductor devices may be, e.g., transistors and diodes designed for high-voltage applications. A guard ring is a floating electrode formed of electrically conducting material above a semiconductor material layer. A portion of an insulating layer is between at least a portion of the guard ring and the semiconductor material layer. A guard ring may be located, for example, on a transistor between a gate and a drain electrode. A semiconductor device may have one or more guard rings. | 02-26-2015 |
Patent application number | Description | Published |
20110046115 | Mirtazapine Solid Dosage Forms - A non-effervescent, solid dosage form containing mirtazapine, which is used to form mirtazapine pharmaceutical tablets. The dosage form contains mirtazapine, a hydrophilic component, and at least one lubricant. In some embodiments, the dosage forms contain a salivating agent. Processes for producing mirtazapine orally disintegrating tablets are also provided. | 02-24-2011 |
20110136771 | Orally Disintegrating Solid Dosage Forms Comprising Progestin and Methods of Making and Use Thereof - The present invention is directed to non-effervescent, orally disintegrating solid pharmaceutical dosage forms comprising progestin and methods of making and using the dosage forms to treat conditions in females in need thereof. | 06-09-2011 |
20110212155 | Flexible, Compressed Intravaginal Rings, Methods of Making and Using the Same, and Apparatus for Making the Same - The present invention is directed to flexible, compressed intravaginal rings comprising a substantially homogeneous compressed mixture comprising a polymethacrylate, a plasticizer, and an active agent, and methods of making and using the same, and apparatus for making the same. | 09-01-2011 |
20120207798 | Solid Oral Dosage Form Attached to a Handle - The present invention relates to a method of attaching a handle to a solid oral dosage form by use of high frequency mechanical vibrations. The present invention also relates to a method of attaching a handle to a solid oral dosage form, the method comprising: (a) placing a handle in contact with a solid oral dosage form, wherein an area of contact between the handle and the solid oral dosage form forms a joint interface; (b) applying high frequency mechanical vibrations to the joint interface until the solid oral dosage form at the joint interface reaches a molten state; and (c) cooling the joint interface in a molten state to allow solidification, thereby attaching the handle to the solid oral dosage form. | 08-16-2012 |
20140142076 | ORAL TRANSMUCOSAL DRUG DELIVERY SYSTEM - This invention relates to dosage forms for the delivery of drugs across the oral mucosa having improved transmucosal permeability. More specifically, the invention relates to an oral transmucosal dosage form comprising a primary vehicle comprising a crystallization inhibition agent (CIA) system and a drug, and a secondary vehicle. It also relates to methods of designing and making this dosage form, methods of administering this dosage form and methods of packaging the dosage forms. | 05-22-2014 |