Patent application number | Description | Published |
20100330472 | ELECTROPHOTOGRAPHIC PHOTORECEPTOR, IMAGE FORMING APPARATUS AND PROCESS CARTRIDGE - There is provided an electrophotographic photoreceptor including a conductive substrate; an intermediate layer; a photosensitive layer; and a surface layer, in this order, the surface layer including two or more charge transporting materials each including a reactive substituent and respectively having mutually different ionization potentials, in an amount of 90% by weight or more relative to the total solid content of the surface layer, and the content ratio X of each of the two or more charge transporting materials satisfying the following Formula (1). X(n) represents a content ratio (weight %) of a charge transporting material that has the n | 12-30-2010 |
20130101929 | ELECTROPHOTOGRAPHIC PHOTORECEPTOR, PROCESS CARTRIDGE, AND IMAGE FORMING APPARATUS - Provided is an electrophotographic photoreceptor including a conductive substrate and a photosensitive layer provided on the conductive substrate, wherein an uppermost surface layer thereof is constituted with a cured film of a composition that contains at least two kinds of reactive charge transporting materials selected from a first reactive charge transporting material having an —OH group as a reactive functional group and a second reactive charge transporting material having an —OCH | 04-25-2013 |
20140045110 | ELECTROPHOTOGRAPHIC PHOTORECEPTOR, PROCESS CARTRIDGE, AND IMAGE FORMING APPARATUS - An electrophotographic photoreceptor includes a cylindrical conductive substrate that is formed of a metal or an alloy and has an average area of crystal grains of 100 μm | 02-13-2014 |
Patent application number | Description | Published |
20080211000 | Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof - A semiconductor device with integrated MIS field-effect transistors includes a first transistor containing a first gate electrode having a composition represented by MAx and a second transistor containing a second gate electrode having a composition represented by MAy, wherein M is at least one metal element selected from the group consisting of W, Mo, Ni, Pt, Ta, Pd, Co and Ti; A is silicon and/or germanium; 009-04-2008 | |
20100020497 | SUBSTRATE STRUCTURE - It is intended to provide a substrate structure ensuring a shielding property and a heat discharge property of a resin part that collectively covers a plurality of electronic components and capable of downsizing, thinning, and a reduction in number of components. The substrate structure | 01-28-2010 |
20110031553 | Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof - A semiconductor device with integrated MIS field-effect transistors includes a first transistor including a first gate electrode having a composition represented by MAx, and a second transistor including a second gate electrode having a composition represented by MAy, in which M includes at least one metal element selected from the group consisting of W, Mo, Ni, Pt, Ta, Pd, Co, and Ti, A includes at least one of silicon and germanium, and 002-10-2011 | |
20110175172 | MANUFACTURING A SEMICONDUCTOR DEVICE - There is provided a semiconductor device including: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate; a work function control layer formed on the gate insulating film; a first silicide layer formed on the work function control layer; a polysilicon gate electrode formed on the first silicide layer; and a source region and a drain region formed on opposite sides of a region under the polysilicon gate electrode in the semiconductor substrate. | 07-21-2011 |
20110241087 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A gate insulating film is formed on a substrate. Next, a gate electrode film is formed on the gate insulating film. A mask film is formed on a portion of the gate electrode film. The gate electrode film is selectively removed by etching using the mask film as a mask. A gate sidewall film is formed so as to be in contact with the lateral surfaces of the mask film and the gate electrode film. The mask film is formed of a laminated film in which at least a first film, a second film and a third film are laminated in this order. The second film has a higher etching selectivity ratio than that of the third film with respect to the gate sidewall film. The third film has a higher etching selectivity ratio than that of the second film with respect to the gate electrode film. | 10-06-2011 |
20110241097 | Semiconductor device and manufacturing method thereof - Device isolation regions for isolating a device forming region are formed over a substrate. Subsequently, a gate insulation film is formed over the device forming region. Then, a lower gate electrode film comprised of a metal nitride film is formed over the gate insulation film. Further, a heat treatment is performed to the lower gate electrode film and then an upper gate electrode film is formed over the lower gate electrode film. | 10-06-2011 |
20120193728 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device includes a semiconductor substrate, a first gate insulating film, a silicon-containing second gate insulating film, and a first gate electrode. The first gate insulating film is formed on the semiconductor substrate and made of a material having a dielectric constant higher than a dielectric constant of silicon oxide or silicon oxynitride. The silicon-containing second gate insulating film is formed on the first gate insulating film. The first gate electrode is formed on the silicon-containing second gate insulating film and includes a metal nitride layer. The first gate insulating film, the silicon-containing second gate insulating film and the metal nitride layer form part of the pMOSFET. | 08-02-2012 |
20130009234 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a substrate, a first gate insulation film formed over a first device forming region disposed in the substrate, a second gate insulation film formed over a second device forming region disposed in the substrate, a lower gate electrode film formed over the first gate insulation film and over the second gate insulation film and comprising a metal nitride film; a mask film formed over the lower gate electrode film situated over the second gate insulation film, and an upper gate electrode film formed over the lower gate electrode film and over the mask film. | 01-10-2013 |
Patent application number | Description | Published |
20100200193 | COOLING DEVICE AND CONSTRUCTION MACHINE OR WORKING MACHINE EQUIPPED WITH THE SAME - A cooling device includes: a cooling fan; a shroud provided at an outer circumferential side of the cooling fan; and a ring having an inner circumferential wall and an outer circumferential wall. The inner circumferential wall is provided on the shroud and adjacent to an outer circumference of the cooling fan. The outer circumferential wall surrounds the inner circumferential wall, and an air-flow-direction downstream side end of the outer circumferential wall is positioned at a further downstream position in an air flow direction than an air-flow-direction downstream side end of the inner circumferential wall. An air-flow-direction downstream side end of an outer circumferential edge of the cooling fan is positioned at a further downstream position in the air flow direction than the air-flow-direction downstream side end of the inner circumferential wall. | 08-12-2010 |
20100200194 | COOLING DEVICE AND CONSTRUCTION MACHINE OR WORKING MACHINE EQUIPPED WITH THE SAME - A cooling device includes: a cooling fan; a shroud provided at an outer circumferential side of the cooling fan; an inner circumferential wall provided on the shroud and adjacent to the outer circumference of the cooling fan; and an outer circumferential wall provided to surround the inner circumferential wall. An air-flow-direction downstream side end of the outer circumferential wall is positioned at a further downstream position in an air flow direction than an air-flow-direction downstream side end of the inner circumferential wall. An air-flow-direction downstream side end of the cooling fan is positioned at a further downstream position than the air-flow-direction downstream side end of the inner circumferential wall. A ratio between a length of the outer circumferential wall and a length of the inner circumferential wall in the air flow direction is 1.07 or more and 1.81 or less, and a width between the outer circumferential wall and the inner circumferential wall is 15 mm or more and 55 mm or less. | 08-12-2010 |
20100206525 | COOLING DEVICE AND CONSTRUCTION MACHINE OR WORKING MACHINE EQUIPPED WITH THE SAME - A cooling device includes: a cooling fan; a shroud provided at an outer circumferential side of the cooling fan; an inner circumferential wall provided on the shroud and adjacent to the outer circumference of the cooling fan so as to surround the cooling fan; an outer circumferential wall provided to surround the inner circumferential wall. An air-flow-direction downstream side end of the outer circumferential wall is positioned at a further downstream position in an air flow direction than an air-flow-direction downstream side end of the inner circumferential wall. The cooling fan is rotatable within a space provided on a radially inner side of the inner circumferential wall. The air-flow-direction downstream side end of the outer circumferential wall is provided at a further upstream position in the air flow direction than an air-flow-direction downstream side end of the cooling fan. | 08-19-2010 |
20100206526 | COOLING DEVICE AND CONSTRUCTION MACHINE OR WORKING MACHINE EQUIPPED WITH THE SAME - A cooling device includes: a cooling fan; a shroud provided at an outer circumferential side of the cooling fan; an inner circumferential wall provided on the shroud and adjacent to the outer circumference of the cooling fan; and an outer circumferential wall provided to surround the inner circumferential wall. An air-flow-direction downstream side end of an outer circumferential edge of the cooling fan is positioned at a further downstream position in an air flow direction than an air-flow-direction downstream side end of the inner circumferential wall. An angle between: an line connecting the air-flow-direction downstream side end of the inner circumferential wall to the air-flow-direction downstream side end of the outer circumferential wall in cross section along the air flow direction of the inner circumferential wall and the outer circumferential wall; and a line orthogonal to the air flow direction, is 9 degrees or more and 45 degrees or less. | 08-19-2010 |