Patent application number | Description | Published |
20110059839 | TRANSLUCENT POLYCRYSTALLINE SINTERED BODY, METHOD FOR PRODUCING THE SAME, AND ARC TUBE FOR HIGH-INTENSITY DISCHARGE LAMP - A translucent polycrystalline sintered body is mainly composed of an alumina, is suitable for the manufacture of an arc tube for a high-intensity discharge lamp, and has an average grain diameter of 35 to 70 μm, preferably 50 to 60 μm. In a case where the sintered body is in a 0.5-mm-thick flat plate shape, the in-line transmittance of the sintered body is 30% or more, preferably 50% or more. In this case, the ratio between maximum and minimum in-line transmittance values is 2:1 to 1:1 in the visible region of 360 to 830 nm. The bending strength of the sintered body is 250 MPa or more, preferably 300 MPa or more. | 03-10-2011 |
20110114352 | CERAMIC TUBE FOR HIGH-INTENSITY DISCHARGE LAMP AND METHOD OF PRODUCING THE SAME - The present invention relates to a ceramic tube for a high-intensity discharge lamp, comprising a hollow member and a plug member. The hollow member contains a substantially cylindrical body and a closure for closing one end of the body, and the plug member is inserted into an insertion opening formed at the other end of the body. Before the insertion of the plug member, the insertion opening has a tapered portion with a diameter decreasing in the direction from the open end to the inside at least in an area into which the plug member is inserted. After the insertion of the plug member, an outer wall of the plug member is bonded to an inner wall of the insertion opening. | 05-19-2011 |
20120133279 | ARC TUBE AND METHOD OF MANUFACTURING SAME - An arc tube includes a light emitting body for light therein and a ceramic tube having a first capillary and a second capillary integral with respective opposite sides of the light emitting body. A first electrode is inserted and sealed in the first capillary, and a second electrode is inserted and sealed in the second capillary. The first electrode is sealed in the first capillary by shrink fitting. | 05-31-2012 |
20120267412 | METHOD OF PRODUCING CERAMIC SUBSTRATES - A ceramic base plate is divided into a plurality of substrate regions | 10-25-2012 |
20140191373 | Composite Wafer and Method for Manufacturing the Same - A composite wafer | 07-10-2014 |
20150102707 | Composite Substrate - A composite substrate | 04-16-2015 |
20150132540 | Handle Substrates of Composite Substrates for Semiconductors - A composite substrate for a semiconductor includes a handle substrate | 05-14-2015 |
20150179504 | Handle Substrates of Composite Substrates for Semiconductors - A handle substrate | 06-25-2015 |
20150232389 | Handle Substrates of Composite Substrates for Semiconductors - A handle substrate | 08-20-2015 |
20150353428 | Insulating Substrates Including Through Holes - It is provided an insulating substrate including through holes | 12-10-2015 |
20150357221 | Handle Substrate and Composite Wafer for Semiconductor Device - In a handle substrate for a composite wafer for a semiconductor, particles from the wafer with a notch formed therein are reduced. The handle substrate | 12-10-2015 |
20150364548 | Handle Substrates of Composite Substrates for Semiconductors, and Composite Substrates for Semiconductors - A handle substrate of a composite substrate for a semiconductor is provided. The handle substrate is composed of polycrystalline alumina. The handle substrate includes an outer peripheral edge part with an average grain size of 20 to 55 μm and a central part with an average grain size of 10 to 50 μm. The average grain size of the outer peripheral edge part is 1.1 times or more and 3.0 times or less of that of the central part of the handle substrate. | 12-17-2015 |
20150376066 | Handle Substrates of Composite Substrates for Semiconductors - A handle substrate is composed of a translucent alumina sintered body containing a sintering aid including at least magnesium. A concentration of magnesium at a bonding face of the handle substrate to a donor substrate is half or less of an average concentration of magnesium of the handle substrate. | 12-31-2015 |
20150380290 | COMPOSITE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A composite substrate | 12-31-2015 |
20160005643 | Handle Substrate, Composite Substrate for Semiconductor, and Semiconductor Circuit Board and Method for Manufacturing the Same - It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina. A purity of alumina of the translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of the translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of the translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm. | 01-07-2016 |
20160007461 | Insulating Substrates Including Through Holes - It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 μm, and a diameter of the through hole is 20 to 100 μm. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 μm in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 μm. | 01-07-2016 |
20160046528 | Handle Substrates for Composite Substrates for Semiconductors - An alumina purity of translucent polycrystalline alumina forming a handle substrate is 99.9 percent or higher, and a porosity of the polycrystalline alumina is 0.01% or more and 0.1% or less. A number of pores, each having a size of 0.5 μm or larger and included in a surface region on a side of a bonding face of the handle substrate is 0.5 times or less of a number of pores, each having a size of 0.1 μm or larger and 0.3 μm or smaller and contained in the surface region. | 02-18-2016 |