Patent application number | Description | Published |
20100072418 | Polishing slurry - A polishing slurry used for chemical mechanical polishing of a barrier layer and an interlayer dielectric film in manufacturing a semiconductor integrated circuit includes two colloidal silicas which have association degrees differing from each other by at least 0.5 and primary particle sizes differing from each other by 5.0 nm or less, an anticorrosive, and an oxidizer. The polishing slurry is used in the barrier metal CMP and is capable of achieving a good polishing rate on the interlayer dielectric film while simultaneously reducing scratching which is a defect on the polished surface. | 03-25-2010 |
20110076852 | CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE - A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition. | 03-31-2011 |
20140073140 | Etching Composition - This disclosure relates to an etching composition containing about 60% to about 95% of at least one sulfonic acid; about 0.005% to about 0.04% of chloride anion; about 0.03% to about 0.27% of bromide anion; about 0.1% to about 20% of nitrate or nitrosyl ion; and about 3% to about 37% of water. | 03-13-2014 |
20140120734 | Novel Etching Composition - This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water. | 05-01-2014 |
Patent application number | Description | Published |
20100194553 | HYBRID VEHICLE - An energy gauge includes a first section indicating a remaining amount of fuel, a second section indicating a remaining amount of stored electric power and a baseline. The first section and the second section extend to the right and left with respect to the baseline. A sub-section indicating the remaining amount of fuel and a sub-section indicating the remaining amount of stored electric power are displayed continuously and integrally across the baseline, commonly starting from the baseline. The first section and the second section are arranged at the right and left sides, respectively, with respect to the baseline in correspondence with the positions at which a fuel inlet and a charging inlet are disposed. | 08-05-2010 |
20110254378 | NON CONTACT POWER TRANSFER DEVICE AND VEHICLE EQUIPPED THEREWITH - A non contact electric power transfer device includes: a self resonant coil; an induction coil capable of transmitting and receiving electric power to and from an induction coil capable of the self resonance coil through electromagnetic induction; and a bobbin that has at least one of the self resonant coil and the induction coil attached thereto, and has an accommodation chamber defined therein and capable of accommodating a device therein. | 10-20-2011 |
20110300753 | PLUG CONVERSION ADAPTOR - A conversion adaptor enables utilization of a standardized charge cable used when a power storage device mounted on an electrically-powered vehicle is charged by a power source provided outside of the vehicle as a universal cable for transmitting electric power to electric loads having different plug shapes that are respectively standardized from one region to another. Conversion adaptor includes a primary side connector unit configured to be connectable to a connector of charge cable, a secondary side connector unit configured so as to have a plug of an electric load, such as a home electric appliance, connected thereto, and a manipulating unit for manipulating a CCID of charge cable so that relays are switched off when connector of charge cable is connected to first connector unit. | 12-08-2011 |
20120091958 | VEHICLE, CHARGING CABLE, AND CHARGING SYSTEM FOR VEHICLE - In a charging system for a vehicle for charging a power storage device, including the vehicle having the power storage device, and a charging cable for transmitting electric power supplied from an external power supply outside of the vehicle to the power storage device, charging information about charging performed by a charging device is set based on a signal generated by operation of an operation switch provided on a charging connector. This configuration can improve operability during charging. | 04-19-2012 |
20120133326 | CHARGING SYSTEM - A charging system includes a locking device locking a connector provided at the end of a cable in the state where the connector is connected to an inlet provided in a vehicle; a release button for releasing locking by the locking device; a switch generating a signal indicating that the connector and the inlet are connected; a horn; and an ECU. In response to the operation of the release button, the switch stops generation of the signal. The ECU controls charging of a power storage device and detects whether the signal is issued or not. In the case where the ECU detects that generation of the signal is stopped during charging of the power storage device, the ECU causes the horn to issue an alarm. | 05-31-2012 |
Patent application number | Description | Published |
20110237480 | CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE - A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10. | 09-29-2011 |
20110281436 | CLEANING COMPOSITION, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND CLEANING METHOD - Provided are a cleaning composition which is capable of inhibiting the metal of a semiconductor substrate from corrosion, and has an excellent removability of plasma etching residues and/or ashing residues on the semiconductor substrate, a method for producing a semiconductor device, and a cleaning method using the cleaning composition. The cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate, and a preparation method and a cleaning method for a semiconductor device, using the cleaning composition, wherein the cleaning composition includes (Component a) water; (Component b) an amine compound; (Component c) hydroxylamine and/or a salt thereof; (Component d) a quaternary ammonium compound; (Component e) an organic acid; and (Component f) a water-soluble organic solvent; and has a pH of 6 to 9. | 11-17-2011 |
20130244443 | METHOD OF PRODUCING A SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID - A method for manufacturing a semiconductor substrate product having: providing an etching liquid containing water, a hydrofluoric acid compound and an organic solvent, and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer. | 09-19-2013 |
20130244444 | METHOD OF PRODUCING A SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID - A method of producing a semiconductor substrate product, having the steps of: providing an etching liquid containing water, a hydrofluoric acid compound, and a water-soluble polymer; and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer. | 09-19-2013 |
20140001145 | METHOD OF FORMING A CAPACITOR STRUCTURE, AND A SILICON ETCHING LIQUID USED IN THIS METHOD | 01-02-2014 |
20140135246 | CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE - A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10. | 05-15-2014 |
20140308819 | METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT, AND ETCHING METHOD TO BE USED THEREIN - A method of producing a semiconductor substrate product, the method containing: a step of preparing an aqueous solution containing 7% by mass or more and 25% by mass or less of a quaternary alkyl ammonium hydroxide; a step of preparing a semiconductor substrate having a silicon film comprising a polycrystalline silicon film or an amorphous silicon film; and a step of heating the aqueous solution at 80° C. or higher and applying the resultant aqueous solution onto the semiconductor substrate to etch at least a part of the silicon film. | 10-16-2014 |
20140332713 | ETCHING METHOD AND ETCHING LIQUID USED THEREIN - An etching method having the step of: applying an etching liquid to a substrate, the etching liquid containing: a fluorine ion, a nitrogen-containing compound having at least 2 of nitrogen-containing structural units, and water, the etching liquid having a pH of being adjusted to 5 or less; and etching a titanium compound in the substrate. | 11-13-2014 |