Narishige, JP
Kazuki Narishige, Miyagi JP
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20150037982 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber. | 02-05-2015 |
20150056816 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND COMPUTER-READABLE STORAGE MEDIUM - A semiconductor device manufacturing method for etching a substrate having a multilayer film formed by alternately stacking a first film and a second film, and a photoresist layer to form a step-shaped structure is provided. The step-shaped structure is formed by repeatedly performing a first step of plasma-etching the first film by using the photoresist layer as a mask, a second step of exposing the photoresist layer formed on the substrate to a plasma generated from a processing gas containing argon gas and hydrogen gas by applying a high frequency power to a lower electrode while applying a negative DC voltage to an upper electrode, a third step of trimming the photoresist layer, and a fourth step of plasma-etching the second film. | 02-26-2015 |
Kazuki Narishige, Nirasaki-Shi JP
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20090045165 | Semiconductor device manufacturing method and storage medium - An object of the present invention is to obtain a favorable etching shape in etching an organic film formed on a substrate. | 02-19-2009 |
20130023120 | METHOD OF FORMING MASK PATTERN AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of forming a mask pattern includes a first pattern forming step of etching an anti-reflection coating film by using as a mask a first line portion made up of a photo resist film formed on the anti-reflection film to form a pattern including a second line portion made up of the photo resist film and the anti-reflection film; an irradiation step of irradiating the photo resist film with electrons; a silicon oxide film forming step to cover the second line portion isotropically; and an etch back step of etching back the silicon oxide film such that the silicon oxide film is removed from the top of the second line portion as sidewalls of the second line portion. The method further includes a second pattern forming step of ashing the second line portion to form a mask pattern including a third line portion made up of the silicon oxide film and remains. | 01-24-2013 |
Kazuki Narishige, Nirasaki JP
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20120225561 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND COMPUTER-READABLE STORAGE MEDIUM - There is provided a semiconductor device manufacturing method for forming a step-shaped structure in a substrate by etching the substrate having thereon a multilayer film and a photoresist film on the multilayer film and serving as an etching mask. The multilayer film is formed by alternately layering a first film having a first permittivity and a second film having a second permittivity different from the first permittivity. The method includes a first process for plasma-etching the first film by using the photoresist film as a mask; a second process for exposing the photoresist film to hydrogen-containing plasma; a third process for trimming the photoresist film; and a fourth process for etching the second film by using the trimmed photoresist film and the plasma-etched first film as a mask. The step-shaped structure is formed in the multilayer film by repeatedly performing the first process to the fourth process in this sequence. | 09-06-2012 |
Kazuki Narishige, Nirasaki-City JP
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20090242515 | PLASMA PROCESSING APPARATUS AND PLASMA ETCHING METHOD - A plasma processing apparatus includes an inner upper electrode provided to face a lower electrode mounting thereon a substrate, an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode and electrically isolated from the inner upper electrode in a vacuum evacuable processing chamber and a processing gas supply unit for supplying a processing gas into a processing space between the inner and the outer upper electrode and the lower electrode. A radio frequency (RF) power supply unit is also provide to apply a RF power to the lower electrode or the inner and the outer upper electrode to generate a plasma of the processing gas by RF discharge. A first and a second DC power supply unit are provided to apply a first and a second variable DC voltage to the inner upper electrode, respectively. | 10-01-2009 |
20110059616 | METHOD FOR PROCESSING A TARGET OBJECT - A method for processing a target object includes arranging a first electrode and a second electrode for supporting the target object in parallel to each other in a processing chamber and processing the target object supported by the second electrode by using a plasma of a processing gas supplied into the processing chamber, the plasma being generated between the first electrode and the second electrode by applying a high frequency power between the first electrode and the second electrode. The target object includes an organic film and a photoresist layer formed on the organic film. The processing gas contains H | 03-10-2011 |
20120244709 | PLASMA ETCHING METHOD AND STORAGE MEDIUM - Disclosed is a plasma etching method capable of carrying out an etching process while preventing an etching shape defect such as a bowing from occurring. The plasma etching method includes etching an organic film formed on the substrate to a middle depth using an inorganic film as a mask by generating plasma between an upper electrode a surface of which is formed with a silicon containing material and a lower electrode where a substrate to be processed is placed thereon in a processing chamber; forming a protective film including the silicon containing material of the upper electrode on a side wall of an etching region formed from the etching process by applying a negative DC voltage on the upper electrode while generating the plasma; and continuing the etching process using the plasma thereby etching the organic film to a predetermined depth. | 09-27-2012 |
Naoaki Narishige, Tokyo JP
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20080280748 | Dielectric Ceramic-Forming Composition and Dielectric Ceramic Material - A dielectric ceramic-forming composition capable of being sintered at a temperature lower than that in the known art and to be formed into a dielectric ceramic material having a high dielectric constant; and a dielectric ceramic material obtained from the dielectric ceramic-forming composition are provided. | 11-13-2008 |
20100144947 | INORGANIC FILLER AND COMPOSITE DIELECTRIC MATERIAL USING THE SAME - It is an object of the present invention to provide an inorganic filler, which effectively suppresses elution of A-site metals such as Ba, Ca, Sr, and Mg from a perovskite-type composite oxide and which can be particularly preferably used as an inorganic filler for a composite dielectric body. The inorganic filler of the present invention is characterized in that it comprises a perovskite-type composite oxide that has been coated by hydrolyzing a titanate coupling agent in a solvent. The pH of the inorganic filler is preferably 8.5 or less when it is dispersed in water, and the aforementioned solvent is preferably water. | 06-10-2010 |
20100168307 | MODIFIED PEROVSKITE COMPLEX OXIDE, METHOD FOR PRODUCING THE SAME AND COMPOSITE DIELECTRIC MATERIAL - It is an object of the present invention to provide: a modified perovskite-type composite oxide, which effectively suppresses elution of A-site metals from a perovskite-type composite oxide, and which can be particularly preferably used as an inorganic filler for a composite dielectric body; a method for producing the same; and a composite dielectric material using the same. The modified perovskite-type composite oxide of the present invention is produced by primarily coating the particle surface of a perovskite-type composite oxide with silica and then secondarily coating it with a coupling agent, characterized in that the layer primarily coated with silica is produced by performing a heat treatment at 800° C. to 1200° C. on hydrolyzed silica obtained by the hydrolysis of tetraalkoxysilane. | 07-01-2010 |
Naoaki Narishige, Chiba JP
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20090117385 | EXTERNAL ADDITIVE FOR TONER AND METHOD FOR PRODUCING THE SAME - When being blended in a toner, a barium titanate external additive for toner enhances, in particular, the toner fluidity, electrical properties, and other relevant performance; concurrently achieves high image density and reduced background fog in a printer using the toner; and further reduces image defects, such as void, fading, and the like. An industrially advantageous producing method of the barium titanate external additive for toner is also provided. The external additive for toner of the present invention includes spherical barium titanate having a specific gravity of 5.6 g/ml or less. | 05-07-2009 |
20090134356 | EXTERNAL ADDITIVE FOR TONER AND METHOD FOR PRODUCING THE SAME - When being blended particularly in a color toner, a barium titanate external additive for toner enhances the toner fluidity, electrical properties, and other relevant performance; concurrently achieves high image density and reduced background fog in a color printer using the toner; and further retains high image quality even under a high-temperature high-humidity environment and a low-temperature low-humidity environment. An industrially advantageous producing method of the barium titanate external additive for toner is also provided. The external additive for toner of the present invention includes spherical barium titanate having undergone coating treatment with a hydrophobicizing agent. | 05-28-2009 |
Soshi Narishige, Hitachi JP
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20090102473 | EDDY CURRENT TESTING METHOD AND EDDY CURRENT TESTING APPARATUS - The present invention provides an eddy current testing method and an eddy current testing apparatus that can reduce detection noise to increase the SN ratio thus improving the defect detection accuracy. | 04-23-2009 |
Tasuke Narishige, Nagoya-Shi JP
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20140290568 | NOZZLE AND HONEYCOMB FILTER PRODUCTION APPARATUS USING THE SAME - A nozzle is mounted on an end of an ejector for ejecting an aerosol on an ejection side in a honeycomb filter production apparatus. The nozzle is formed into a shape having a longitudinal direction. A single introduction port is formed at an end surface of the nozzle on one side in the longitudinal direction, and a plurality of discharge ports are formed at an end surface of the nozzle on the other side in the longitudinal direction. A single introduction passage extends linearly from the single introduction port in the longitudinal direction. A plurality of discharge passages are each branched from an end portion of the introduction passage on a side opposite to the introduction port and extend to corresponding one of the discharge ports in a direction tilted from the longitudinal direction. | 10-02-2014 |