Patent application number | Description | Published |
20080211328 | Machine Tool and Method For Operating a Machine Tool - The invention relates to a machine tool comprising an electric motor ( | 09-04-2008 |
20090140154 | VIBRATION DOSIMETER AND METHOD FOR DETERMINING THE DAILY VIBRATION EXPOSURE - The invention relates to a vibration dosimeter ( | 06-04-2009 |
20090294144 | Hand-held power tool - A hand-held power tool has a main element; a main handle fastened to the main element, the main handle being supported such that the main handle is movable relative to the main element, the main element including a tool fitting that defines a tool axis and the center of gravity that defines a normal direction oriented perpendicular to the tool axis and pointing toward the center of gravity, the main element being moved out of a stationary position toward the main handle so that a portion of at least 10% by weight of the main element is guided with a movement component in the normal direction along a trajectory. | 12-03-2009 |
20100043562 | VIBRATION DOSIMETER FOR DETERMINING VIBRATIONAL LOADING - A vibration dosimeter ( | 02-25-2010 |
20100147542 | TOOL LIFTING - The invention relates to a tool receptacle ( | 06-17-2010 |
20100294525 | HAND TOOL MACHINE - The invention relates to a hand tool machine, particularly a drill and/or chisel hammer, having a striking unit comprising at least one hammer and one striking element, and having a damping device for the striking element for damping a B-strike of the striking element against a striking unit. The invention proposes that the damping device have at least one axial overlap region with the hammer in at least one operating mode. | 11-25-2010 |
20110073339 | HAMMER DRILL AND/OR CHISEL HAMMER - The invention is based on a hammer drill and/or chisel hammer, having an impact mechanism unit, an impact mechanism housing and at least one damping unit. The invention proposes that the damping unit is arranged on the impact mechanism housing along a main extension direction of the impact mechanism unit. | 03-31-2011 |
Patent application number | Description | Published |
20090115074 | Method of Processing a Contact Pad, Method of Manufacturing a Contact Pad, and Integrated Circuit Element - In a method of processing a contact pad, a passivation layer stack including at least one passivation layer is formed on at least an upper surface of a contact pad region. A first portion of the passivation layer stack is removed from above the contact pad region, wherein a second portion of the passivation layer remains on the contact pad region and covers the contact pad region. An adhesion layer is formed on the passivation layer stack. The adhesion layer is patterned, wherein the adhesion layer is removed from above the contact pad region. Furthermore, the second portion of the passivation layer stack is removed. | 05-07-2009 |
20110031625 | Method of Processing a Contact Pad, Method of Manufacturing a Contact Pad, and Integrated Circuit Element - An integrated circuit includes a substrate. A surface region of the substrate includes a contact pad region. A passivation layer stack includes at least one passivation layer. The passivation layer stack is formed over the surface region and adjacent to the contact pad region. An upper portion of the passivation layer stack is removed in, in a portion of the passivation layer stack proximate the contact pad region. | 02-10-2011 |
20120119735 | XMR SENSORS WITH HIGH SHAPE ANISOTROPY - Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer. | 05-17-2012 |
20120181874 | Semiconductor Device and Method of Manufacture Thereof - A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip. | 07-19-2012 |
20130065075 | MAGNETORESISTIVE SPIN VALVE LAYER SYSTEMS - Embodiments relate to magnetoresistive (MR) sensors, sensor elements and structures, and methods. In particular, embodiments relate to MR, such as giant MR (GMR) or tunneling MR (TMR), spin valve layer systems and related sensors having improved stability. Embodiments include at least one of a multi-layer pinned layer or a multi-layer reference layer, making the stack more stable and therefore suitable for use at higher temperatures and magnetic fields than conventional systems and sensors. | 03-14-2013 |
20130328166 | Semiconductor Device and Method of Manufacture Thereof - A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip. | 12-12-2013 |
20140159220 | Semiconductor Device and Method of Manufacture Thereof - A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip. | 06-12-2014 |
Patent application number | Description | Published |
20100199368 | BCL-2-MODIFYING FACTOR (BMF) SEQUENCES AND THEIR USE IN MODULATING APOPTOSIS - The present invention relates generally to novel molecules capable of, inter alia, modulating apoptosis in mammalian cells and to genetic sequences encoding same. More particularly, the present invention relates to a novel member of the Bcl-2 family of proteins, referred to herein as “Bmf”, and to genetic sequences encoding same and to regulatory sequences such as a promoter sequence directing expression of Bmf. Bmf comprises a BH3 domain which facilitates interaction to pro-survival Bcl-2 family members thereby triggering apoptosis. Bmf is regarded, therefore, as a BH3-only molecule. The molecules of the present invention are useful, for example, in therapy, diagnosis, antibody generation and as a screening tool for therapeutic agents capable of modulating physiological cell death or survival and/or modulating cell cycle entry. The present invention further contemplates genetically modified animals in which one or both alleles of Bmf are mutated or partially or wholly deleted alone or in combination with a mutation in one or both alleles of another Bcl-2-type molecule such as but not limited to Bim. The genetically modified animals are useful inter alia in screening for agents which ameliorate the symptoms of diseases caused by defects in apoptosis or which specifically promote apoptosis of target cells. | 08-05-2010 |
20110256152 | Methods Of Treating And Preventing Glucose Toxicity - The present invention relates to a method for treating and/or preventing a disease associated with glucose toxicity in a subject which may comprise administering to the subject a compound that reduces the level of Bim, PUMA and/or Bax activity in a cell of the subject. Furthermore, provided is a method for culturing cells susceptible to exposure to high concentrations of glucose, which may comprise delivering to the cells, or progenitor cells thereof, a compound that reduces the level of Bim, PUMA and/or Bax activity in the cells. | 10-20-2011 |
20140072567 | Methods Of Treating And Preventing Glucose Toxicity - The present invention relates to a method for treating and/or preventing a disease associated with glucose toxicity in a subject which may comprise administering to the subject a compound that reduces the level of Bim, PUMA and/or Bax activity in a cell of the subject. Furthermore, provided is a method for culturing cells susceptible to exposure to high concentrations of glucose, which may comprise delivering to the cells, or progenitor cells thereof, a compound that reduces the level of Bim, PUMA and/or Bax activity in the cells. | 03-13-2014 |
Patent application number | Description | Published |
20090166906 | Device and process for compression particles - The present invention concerns a device ( | 07-02-2009 |
20130116116 | PROCESS FOR PRODUCING A REFORMING CATALYST AND THE REFORMING OF METHANE - The present invention relates to a process for producing a catalyst for the reforming of hydrocarbons, preferably methane, in the presence of CO | 05-09-2013 |
20130116351 | PROCESS FOR PRODUCING A METHANATION CATALYST AND A PROCESS FOR THE METHANATION OF SYNTHESIS GAS - The present invention relates to a process for producing a catalyst for carrying out methanation reactions. The production of the catalyst is based on contacting of a hydrotalcite-comprising starting material with a fusible metal salt. The compounds brought into contact with one another are intimately mixed, thermally treated so that the metal salt fraction melts and subsequently subjected to a low-temperature calcination step and a high-temperature calcination step. The metal salt melt comprises at least one metal selected from the group consisting of K, La, Fe, Co, Ni, Cu and Ce, preferably Ni. The metal salt melt more preferably comprises/contains nickel nitrate hexahydrate. The hydrotalcite-comprising starting material is preferably hydrotalcite or a hydrotalcite-like compound as starting material, and the hydrotalcite-comprising starting material preferably comprises magnesium and aluminum as metal species. | 05-09-2013 |
20130172177 | SINTERING-STABLE HETEROGENEOUS CATALYSTS - A catalyst comprising (i) a support, (ii) metal particles and (iii) a shell which is arranged between the metal particles, wherein the shell (iii) comprises silicon oxide. | 07-04-2013 |
20130210619 | HEXAALUMINATE-COMPRISING CATALYST FOR THE REFORMING OF HYDROCARBONS AND A REFORMING PROCESS - A hexaaluminate-containing catalyst for reforming hydrocarbons. The catalyst consists of a hexaaluminate-containing phase, which consists of cobalt and at least one further element from the group consisting of La, Ba, and Sr, and an oxidic secondary phase. To prepare the catalyst, an aluminum source is brought into contact with a cobalt-containing metal salt solution, dried, and calcined. The metal salt solution additionally contains the at least one further element. The reforming of methane and carbon dioxide is great economic interest since synthesis gas produced during this process can form a raw material for the preparation of basic chemicals. In addition, the use of carbon dioxide as a starting material is important in the chemical syntheses in order to bind carbon dioxide obtained as waste product in numerous processes by a chemical route and thereby avoid emission into the atmosphere. | 08-15-2013 |
20140191449 | HEXAALUMINATE-COMPRISING CATALYST FOR THE REFORMING OF HYDROCARBONS AND A REFORMING PROCESS - A hexaaluminate-containing catalyst containing a hexaaluminate-containing phase which includes cobalt and at least one further element of La, Ba or Sr. The catalyst contains 2 to 15 mol % Co, 70 to 90 mol % Al, and 2 to 25 mol % of the further element of La, Ba or Sr. In addition to the hexaaluminate-containing phase, the catalyst can include 0 to 50% by weight of an oxidic secondary phase. The process of preparing the catalyst includes contacting an aluminum oxide source with cobalt species and at least with an element from the group of La, Ba and Sr. The molded and dried material is preferably calcined at a temperature greater than or equal to 800° C. In the reforming process for reacting hydrocarbons in the presence of CO | 07-10-2014 |