Patent application number | Description | Published |
20130256751 | METHODS OF PRODUCING FREE-STANDING SEMICONDUCTORS USING SACRIFICIAL BUFFER LAYERS AND RECYCLABLE SUBSTRATES - A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials. | 10-03-2013 |
20130333751 | COINCIDENT SITE LATTICE-MATCHED GROWTH OF SEMICONDUCTORS ON SUSTRATES USING COMPLIANT BUFFER LAYERS - A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects. | 12-19-2013 |
Patent application number | Description | Published |
20090045074 | APPARATUS AND METHOD FOR REMOVAL OF IONS FROM A POROUS ELECTRODE THAT IS PART OF A DEIONIZATION SYSTEM - An electrode for use in a deionization apparatus includes a conductive material that is in a granular form and is arranged in a layer that is defined by a first face and a second face. The electrode includes a substrate that is disposed against the first face, and a first member that is disposed against the second face and is formed to permit a fluid to pass through the first member and into contact with the granular conductive material to permit absorption of ions by the granular conductive material. | 02-19-2009 |
20090212262 | ELECTRODE FOR USE IN A DEIONIZATION APPARATUS AND METHOD OF MAKING THE SAME - An electrode for use in a deionization apparatus is provided and is formed of (1) at least one polymerization monomer selected from the group consisting of phenol, furfural alcohol, dihydroxy benzenes; trihydroxy benzenes; dihydroxy naphthalenes and trihydroxy naphthalenes and mixtures thereof; (2) a crosslinker; and (3) a catalyst; or reaction products thereof, together in a carbonized form that is free of a carbon fiber reinforcing agent. | 08-27-2009 |
20100059378 | APPARATUS AND METHOD FOR REMOVAL OF IONS FROM A POROUS ELECTRODE THAT IS PART OF A DEIONIZATION SYSTEM - A method and system for treating a fluid includes an electrode with an outer housing having openings in a side wall thereof, a granular conductive material encapsulated within the outer housing, and an electrical terminal located at least partially within the outer housing and in electrical communication with the granular conductive material, wherein the openings are configured to permit ions in a fluid to be treated to pass there through so as to come into contact with the granular conductive material. The system includes a treatment tank and electrodes within the tank being charged to differing polarities by a voltage source. The method includes applying a first polarity to at least one electrode, oppositely charging one or more of other spaced apart electrodes, and flowing the fluid within the space so as to treat the fluid. | 03-11-2010 |
20130056366 | APPARATUS AND METHOD FOR REMOVAL OF IONS FROM A POROUS ELECTRODE THAT IS PART OF A DEIONIZATION SYSTEM - A method and system for treating a fluid includes an electrode with an outer housing having openings in a side wall thereof, a granular conductive material encapsulated within the outer housing, and an electrical terminal located at least partially within the outer housing and in electrical communication with the granular conductive material, wherein the openings are configured to permit ions in a fluid to be treated to pass there through so as to come into contact with the granular conductive material. The system includes a treatment tank and electrodes within the tank being charged to differing polarities by a voltage source. The method includes applying a first polarity to at least one electrode, oppositely charging one or more of other spaced apart electrodes, and flowing the fluid within the space so as to treat the fluid. | 03-07-2013 |