Patent application number | Description | Published |
20130232017 | DEVICE, SYSTEM, AND METHOD OF ELECTRONIC PAYMENT - The present invention includes device, system, and method of electronic payment. An operator server may transmit, to a smartphone or other portable wireless device of a patron, a unique time-sensitive and location-based code. The unique code may be used to create an ad-hoc linkage or association between the smartphone of the consumer, and a purchase tab of that patron at an establishment or merchant store. The patron may then utilize his smartphone in order to autonomously close his purchase tab at the establishment, and in order to perform remote electronic payment for the purchase tab to the establishment, without requiring involvement or assistant from waiters or establishment personnel. | 09-05-2013 |
20140244409 | SYSTEM, DEVICE, AND METHOD OF ELECTRONIC PAYMENT - A system and method allow a customer to perform self-checkout at a real-world non-virtual store or restaurant or other business establishment that the customer is visiting. The customer pre-defines an electronic payment method. The customer visits the business establishment, and the system generates a unique user-specific code that is a function of the time, the location, and the specific customer. The code is displayed on the mobile device of the customer, which is then shown to an employee of the business establishment, which then enters the unique code into a Point of Sale terminal; thereby generating an association between an ongoing open tab of the customer, and the mobile device of the customer. The customer is able to perform self checkout of the open tab, without requiring action on behalf of the business establishment. | 08-28-2014 |
Patent application number | Description | Published |
20090039343 | Transistor - An electrolyte-gated field effect transistor is disclosed, the transistor comprising an electrolyte including a polymeric ionic liquid analogue. In a preferred embodiment, the transistor further comprises a source electrode, a drain electrode disposed so as to be separated from the source electrode, forming a gap between the source and drain electrodes, a semiconductor layer bridging the gap between the source and drain electrodes and thus forming a transistor channel, and a gate electrode positioned so as to be separated from the source electrode, the drain electrode and the semiconductor layer. In this embodiment, the electrolyte is disposed so as to contact at least a part of both the gate electrode and the semiconductor layer. | 02-12-2009 |
20090040587 | Electrochemical thin-film transistor - An electrochemical transistor comprising an electrolyte is disclosed. The electrolyte includes an ionic liquid. In a preferred embodiment, the transistor further comprises a source electrode, a drain electrode separated from the source electrode so as to form a gap between the source and drain electrodes, a semiconductor layer bridging the gap between the source and drain electrodes to form a transistor channel, and a gate electrode separated from the source electrode, the drain electrode and the semiconductor layer. In this embodiment, the electrolyte is disposed so as to contact at least a part of both the semiconductor layer and the gate electrode. | 02-12-2009 |
20090042346 | Electrolyte pattern and method for manufacturing an electrolyte pattern - A method for manufacturing a gel electrolyte pattern is disclosed, the method comprising depositing an electrolyte precursor by inkjet printing onto a gelling agent layer. A gel electrolyte pattern is also disclosed, the gel electrolyte pattern comprising either a mixture of a gelling agent and an electrolyte precursor or the products of a chemical reaction between a gelling agent and an electrolyte precursor. | 02-12-2009 |
Patent application number | Description | Published |
20130264559 | Hole Injection Layers - The present invention provides a process for the preparation of a device comprising a transition metal oxide doped interface between an anode and a semiconducting hole transport layer, comprising the steps of depositing a solution comprising a precursor for a metal oxide layer on said anode, drying and optionally annealing the deposited solution to form a solid layer precursor, depositing a solution of said semiconducting hole transport layer material onto the solid layer, and optionally annealing thermally the resulting product to give the desired device having transition metal oxide at the interface between said anode and said semiconducting hole transport layer; together with a device obtainable by the process according to the invention. | 10-10-2013 |
20130302998 | Adhesion Layer for Solution-Processed Transition Metal Oxides on Inert Metal Contacts - An ammonium thio-transition metal complex is used as an adhesion promoter for immobilizing temperature-stable transition metal oxide layers on an inert metal surface. The ammonium thio-transition metal complex comprises a transition metal selected from molybdenum, tungsten and vanadium, and is preferably ammonium tetrathiomolybdate. A precursor of the transition metal oxide is deposited on the inert metal surface by a solution-based process. The precursor is a dispersion or a dissolution of the transition metal oxide, a transition metal oxide hydrate, an ammonium salt of an acidic transition metal oxide hydrate or phosphoric acid-transition metal oxide complex in water or a phosphoric acid-transition metal oxide complex dissolved in a polar organic solvent. | 11-14-2013 |
20140077194 | COMPOUND - The present invention relates to a compound of general formula (I) which can transport holes in an organic optoelectronic device, and to blends and solutions comprising the compound of general formula (I): | 03-20-2014 |
Patent application number | Description | Published |
20090090907 | Electrochemical device - An electrochemical device is provided, comprising a source contact connected to a first antenna pad, a drain contact connected to a second antenna pad, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and the at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and the gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to the gate electrode(s). | 04-09-2009 |
20100230731 | Circuitry and method - An electrochemical transistor device is provided, comprising a source contact, a drain contact, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and said at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and said gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to said gate electrode(s). | 09-16-2010 |
20110186829 | Surface Treated Substrates for Top Gate Organic Thin Film Transistors - A method of forming a top gate transistor comprising the steps of providing a substrate carrying source and drain electrodes defining a channel region therebetween; treating at least part of the surface of the channel region to reduce its polarity; and depositing a semiconductor layer in the channel. | 08-04-2011 |
20110186830 | Method of Making Organic Thin Film Transistors Using a Laser Induced Thermal Transfer Printing Process - The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ. | 08-04-2011 |
20120037915 | Method of Making an Organic Thin Film Transistor - A method of forming an organic thin film transistor the method comprising:
| 02-16-2012 |
20120187548 | Surface Modification - A method of modifying a fluorinated polymer surface comprising the steps of depositing a first layer on at least a portion of the fluorinated polymer surface, the first layer comprising a first polymer, the first polymer being a substantially perfluorinated aromatic polymer; and depositing a second layer on at least a portion of the first layer, the second layer comprising a second polymer, the second polymer being an aromatic polymer having a lower degree of fluorination than said first polymer, whereby the second layer provides a surface on to which a substance having a lower degree of fluorination than the first polymer, e.g. a non-fluorinated substance is depositable. | 07-26-2012 |
20130168662 | Method of Forming a Semiconductor Device - Method for producing a semiconductor device such as an organic thin film transistor, and a device produced by the method, the method including the steps of forming conducting electrodes over a substrate, treating a surface of the electrodes with an arene substituted with an electron-withdrawing group to form an electrode contact layer over the electrodes, and forming an organic semiconductor layer over the substrate and electrodes, in which the substrate and electrodes are baked before the organic semiconductor layer is formed so as to reduce contaminants on the electrode contact layer and thereby promote improved crystal nucleation on a surface of the electrode. | 07-04-2013 |
20140077189 | ORGANIC LIGHT EMITTING DEVICE AND METHOD - An organic light-emitting device comprises an anode; a hole injection layer in contact with the anode; a light-emitting layer over the hole injection layer; and a cathode over the light-emitting layer, wherein the hole injection layer comprises an organic semiconductor material doped with a partially fluorinated fullerene such as C | 03-20-2014 |
20140138660 | PROCESS FOR CONTROLLING THE ACCEPTOR STRENGTH OF SOLUTION-PROCESSED TRANSITION METAL OXIDES FOR OLED APPLICATIONS - The present invention provides a process for the adjustment of the electron acceptor strength of a transition metal oxide (TMO) to the HOMO of a semiconducting hole transport layer material (HTL material) in a device comprising an anode, a layer of said TMO deposited on said anode and a layer of said HTL material deposited on said TMO layer, comprising: depositing a solution comprising a precursor for said TMO on said anode, wherein the precursor solution has a pH selected so that the acceptor strength of the TMO for which the solution is a precursor is adjusted to the HOMO of said HTL material; drying the deposited solution to form a solid layer precursor layer; depositing a solution of said HTL material onto said solid layer precursor layer; and annealing thermally the resulting product to give the desired device having TMO at the interface between said anode and said HTL. | 05-22-2014 |
20140217389 | SURFACE MODIFICATION - A method of modifying a fluorinated polymer surface comprising the steps of depositing a first layer on at least a portion of the fluorinated polymer surface, the first layer comprising a first polymer, the first polymer being a substantially perfluorinated aromatic polymer; and depositing a second layer on at least a portion of the first layer, the second layer comprising a second polymer, the second polymer being an aromatic polymer having a lower degree of fluorination than said first polymer, whereby the second layer provides a surface on to which a substance having a lower degree of fluorination than the first polymer, e.g. a non-fluorinated substance is depositable. | 08-07-2014 |
20140299869 | Organic Electronic Device And Method Of Manufacture - A method of forming an organic electronic device comprising the steps of: forming a surface modification layer comprising a partially fluorinated fullerene on at least part of a surface of at least one electrode of the device by depositing a solution comprising the partially fluorinated fullerene and at least one solvent onto the electrode surface; and forming an organic semiconductor layer comprising at least one organic semiconductor on the surface modification layer. The partially fluorinated fullerene is a partially fluorinated Buckminster fullerene, optionally a partially fluorinated C | 10-09-2014 |