Glushkov
Debis Alexandrovich Glushkov, Witten DE
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20110249243 | OPTICAL ELEMENT FOR A LITHOGRAPHIC APPARATUS, LITHOGRAPHIC APPARATUS COMPRISING SUCH OPTICAL ELEMENT AND METHOD FOR MAKING THE OPTICAL ELEMENT - A lithographic apparatus includes an optical element that includes an oriented carbon nanotube sheet. The optical element has an element thickness in the range of about 20-500 nm and has a transmission for EUV radiation having a wavelength in the range of about 1-20 nm of at least about 20% under perpendicular irradiation with the EUV radiation. | 10-13-2011 |
Denis Glushkov, Alfter DE
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20110043777 | TARGET MATERIAL, A SOURCE, AN EUV LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD USING THE SAME - A target material is configured to be used in a source constructed and arranged to generate a radiation beam having a wavelength in an extreme ultraviolet range. The target material includes a Gd-based composition configured to modify a melting temperature of Gd. | 02-24-2011 |
Denis Glushkov, Witten DE
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20100002211 | LITHOGRAPHIC APPARATUS - A discharge produced plasma radiation source includes a laser beam pulse generator configured to provide a laser beam pulse to trigger a pinch in a plasma of the discharge produced plasma radiation source. The laser beam pulse generator is arranged to provide a laser beam pulse having an energy greater than an optimum laser beam pulse energy that corresponds to a maximum output of a given wavelength of radiation for a given discharge energy. | 01-07-2010 |
20120147350 | SPECTRAL PURITY FILTER, LITHOGRAPHIC APPARATUS, AND METHOD FOR MANUFACTURING A SPECTRAL PURITY FILTER - A transmissive spectral purity filter configured to transmit extreme ultraviolet radiation includes a filter part having a plurality of apertures to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. The apertures may be manufactured in semiconductor material such as silicon by an anisotropic etching process. The semiconductor material is provided with a hydrogen-resistant layer, such as silicon nitride Si | 06-14-2012 |
Denis Alexandrovich Glushkov, Alfter DE
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20100328639 | SPECTRAL PURITY FILTER, LITHOGRAPHIC APPARATUS, AND METHOD FOR MANUFACTURING A SPECTRAL PURITY FILTER - A transmissive spectral purity filter is configured to transmit extreme ultraviolet radiation. The spectral purity filter includes a filter part having a plurality of apertures to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. The apertures may be manufactured in carrier material such as silicon by an anisotropic etching process and topped with a reflective layer such as Mo metal, Ru metal, TiN or RuO. A diffusion barrier layer such as silicon nitride Si | 12-30-2010 |
20110080573 | MULTILAYER MIRROR AND LITHOGRAPHIC APPARATUS - A multilayer mirror is constructed and arranged to reflect radiation haying a wavelength in the range of 2-8 nm. The multilayer mirror has alternating layers selected from the group consisting of: Cr and Sc layers, Cr and C layers, C and B | 04-07-2011 |
20110226735 | IMPRINT LITHOGRAPHY - An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium. | 09-22-2011 |
20130015373 | EUV Radiation Source and EUV Radiation Generation Method - An EUV radiation source comprising a fuel supply ( | 01-17-2013 |
20140198306 | MULTILAYER MIRROR, METHOD OF PRODUCING A MULTILAYER MIRROR AND LITHOGRAPHIC APPARATUS - A multilayer mirror for use in device lithography is configured to reflect and/or pattern radiation having a wavelength in the range of about 6.4 nm to about 7.2 nm. The multilayer mirror has a plurality of alternating layers of materials. The plurality of alternating layers of materials include first layers of materials and second layers of materials. The second layers have a higher refractive index for the radiation than the first layers. The materials of the first layers and the materials of the second layers are mutually chemically unreactive at an interface therebetween at temperatures less than 300° C. This may allow the mirrors to have a narrow boundary region of intermingled materials from alternating layers between the layers, for example of 0.5 nm or less in width, which may improve sharpness of the boundary region and improve reflectivity. | 07-17-2014 |
Denis Alexandrovich Glushkov, Witten DE
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20100141909 | RADIATION SYSTEM AND LITHOGRAPHIC APPARATUS - A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight. | 06-10-2010 |
20110292366 | MULTILAYER MIRROR AND LITHOGRAPHIC APPARATUS - A multilayer mirror to reflect radiation having a wavelength in the range of 2-8 nm has alternating layers. The alternating layers include a first layer and a second layer. The first and second layers are selected from the group consisting of: U and B | 12-01-2011 |