Helly
Christian Helly, Longuenesse FR
Patent application number | Description | Published |
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20100203266 | COATED CARDBOARD WITH MARKING ELEMENT AND METHOD OF MARKING SAID CARDBOARD - Coating cardboard, for producing packaging, formed of a (natural-) fibre-based support layer covered on at least one of its faces by a pigment layer, includes a fluorescent compound disposed discontinuously on the surface of the support layer, between the support layer and the pigment layer, the compound being invisible to natural light and visible under UV irradiation through the pigment layer, and constituting a marking element of the cardboard, without altering the printability properties of the outer face of the pigment layer. In the method of marking a coated cardboard, the marking element is applied according to a discontinuous surface, by an aqueous solution or dispersion containing the fluorescent compound, to the surface of the face of the support layer which is intended to be covered subsequently by the pigment layer, by for example flexographic printing or spraying. The marking element may serve as a distinctive sign or security sign. | 08-12-2010 |
Partick Helly, Valley Center, CA US
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20110041872 | RAPID SUPPLY OF FLUORINE SOURCE GAS TO REMOTE PLASMA FOR CHAMBER CLEANING - A system and method for performing rapid chamber cleaning is described. The use of F | 02-24-2011 |
Patrick J. Helly, Valley Center, CA US
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20090220374 | METHOD AND APPARATUS FOR USING SOLUTION PRECURSORS FOR ATOMIC LAYER DEPOSITION - A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth. | 09-03-2009 |
20100036144 | METHODS FOR ATOMIC LAYER DEPOSITION - Improved methods for performing atomic layer deposition (ALD) are described. These improved methods provide more complete saturation of the surface reactive sites and provides more complete monolayer surface coverage at each half-cycle of the ALD process. In one embodiment, operating parameters are fixed for a given solvent based precursor. In another embodiment, one operating parameter, e.g. chamber pressure is altered during the precursor deposition to assure full surface saturation. | 02-11-2010 |
20100151261 | METHODS AND APPARATUS FOR THE VAPORIZATION AND DELIVERY OF SOLUTION PRECURSORS FOR ATOMIC LAYER DEPOSITION - Improved apparatus and methods for atomic layer deposition (ALD) are described—In particular, improved methods and apparatus for the vaporization and delivery of solution ALD precursors are provided. The present invention is particularly useful for processing lower volatile metal, metal oxide, metal nitride and other thin film precursors. The present invention uses total vaporization chambers and room temperature valve systems to generate true ALD vapor pulses while increasing utilization efficiency of the solution precursors. | 06-17-2010 |
20120294753 | METHOD AND APPARATUS FOR USING SOLUTION BASED PRECURSORS FOR ATOMIC LAYER DEPOSITION - A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth. | 11-22-2012 |
20120295038 | METHOD AND APPARATUS FOR USING SOLUTION BASED PRECURSORS FOR ATOMIC LAYER DEPOSITION - A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth. | 11-22-2012 |