Tak, KR
Chulgon Tak, Changwon-Si KR
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20130346300 | NETWORK SYSTEM AND METHOD FOR CONTROLLING SAME - The present invention relates to a network system and a control method thereof. The network system includes: a commercial electric appliance comprising a cost system for an operation thereof; and a control device communicably connected to the commercial electric appliance, wherein the control device comprises a display unit configured to remotely monitor operation information of the commercial electric appliance. | 12-26-2013 |
20140087660 | MOBILE TERMINAL, HOME APPLIANCE AND METHOD FOR OPERATING THE SAME - A mobile terminal, a home appliance and a method for operating the same are disclosed. The mobile terminal includes a display configured to display a predetermined screen, a near field communication (NFC) module configured to transmit or receive information related to the screen to or from a home appliance by tagging to the home appliance, and a controller configured to control display of the information received from the home appliance on the display. Accordingly, it is possible to transmit information between the home appliance and the mobile terminal via NFC. | 03-27-2014 |
20140087661 | HOME APPLIANCE USING TERMINAL AND OPERATING METHOD THEREOF - A home appliance using a mobile terminal is provided. The home appliance includes an input unit through which certain commands are input; a control unit controlling an operation of a driving unit of the home appliance according to the input through the input unit; and a near field communication (NFC) module connected to the mobile terminal to be able to communicate, wherein the NFC module comprises a memory unit that stores production information or state information on the home appliance, and if the NFC module is tagged to the mobile terminal, the NFC module transmits information from the memory unit to the mobile terminal. | 03-27-2014 |
Hee-Jae Tak, Gyeonggi-Do KR
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20150291563 | 4,5-DIHYDRO-1H-PYRAZOLE DERIVATIVE OR SALTS THEREOF, AND PHARMACEUTICAL COMPOSITION COMPRISING SAME - The present invention provides a 4,5-dihydro-1H-pyrazole derivative or its pharmaceutically acceptable salt, a process for the preparation thereof, and a pharmaceutical composition comprising the same. The 4,5-dihydro-1H-pyrazole derivative or its pharmaceutically acceptable salt effectively increases the LXR transcriptional activity, and therefore can be usefully applied for preventing or treating a dysfunction in cholesterol metabolism, such as cholesterol gallstone, hyperlipidemia, or coronary atherosclerosis. | 10-15-2015 |
Jung Mi Tak, Icheon-Si Gyeonggi-Do KR
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20150117121 | SEMICONDUCTOR MEMORY APPARATUS AND DATA STORAGE AND POWER CONSUMPTION - A semiconductor memory apparatus includes a write driver configured to transfer input data to a data storage region. The semiconductor memory apparatus may also include a sense amplifier configured to sense and amplify the data stored in the data storage region and output output data. Further, the semiconductor memory apparatus may also include an enable signal generation block configured to generate a write driver enable signal and a sense amplifier enable signal according to a comparison result of the input data and the output data. | 04-30-2015 |
20150179231 | SEMICONDUCTOR MEMORY APPARATUS - A semiconductor memory apparatus may include a program voltage generation block configured to generate a program voltage in response to program codes; a precharge voltage generation block configured to generate a precharge voltage in response to the program codes and addresses; and a main bit line configured to be applied with the program voltage and the precharge voltage. | 06-25-2015 |
Jung Mi Tak, Icheon-Si KR
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20130322191 | SEMICONDUCTOR DEVICE CAPABLE OF BLOCK PROTECTION - A semiconductor device includes: a memory cell array comprising a plurality of blocks each comprising a memory cell arranged at an intersection between a word line and a bit line; and a block state information storing unit configured to store state information of the respective blocks. The block state information storing unit stores lock state information to partially limit access to each of the blocks in response to a power-up signal. | 12-05-2013 |
Jung Mi Tak, Pohang KR
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20120137046 | BLOCK CONTROL DEVICE OF SEMICONDUCTOR MEMORY AND METHOD FOR CONTROLLING THE SAME - A block control device for a semiconductor memory and a method for controlling the same are disclosed, which relate to a technology for controlling a block operation state of a Low Power Double-Data-Rate 2 (LPDDR2) non-volatile memory device. A block control device for use in a semiconductor memory includes a block address comparator configured to compare a first block address with a last block address, and output a same pulse or unequal pulse according to the comparison result, a block address driver configured to output a lock state control signal for driving a block address in response to the same pulse, a block address counter configured to count block addresses from the first block address to the last block address in response to the unequal pulse, and generate a block data activation pulse, and a block address register configured to store a lock state of a corresponding block in response to the lock state control signal and the block data activation pulse. | 05-31-2012 |
Koo Hyun Tak, Gyonggi-Do KR
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20140230363 | DOME COVER SUPPORTER - A dome cover supporter is capable of improving durability of a product and extending a life span thereof by preventing roof panels from protruding upwardly by supporting a dome cover used in a storage tank, achieving resistance against a load by decreasing surface roughness, and extending a life span by preventing gaskets from being exposed to ultraviolet rays. The dome cover supporter includes a supporter including supporter main body formed in a vertical direction, a base formed in lower portion of the supporter main body to support the supporter main body against the ground, and horizontal extending pieces bent in an upper portion of the supporter main body to be extended; and a fixing member fastened to an upper portion of the supporter to maintain a seal by fixing and pressing roof panels. | 08-21-2014 |
Kyung-Sean Tak, Gyeonggi-Do KR
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20160096788 | LIQUID CRYSTAL COMPOSITION HAVING A NEGATIVE LIQUID CRYSTAL MODE - Provided is a liquid crystal composition including an additive of the following chemical formula: | 04-07-2016 |
Kyungseon Tak, Gwangyang-Si KR
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20130114030 | LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display includes a first substrate, a second substrate, and a liquid crystal layer disposed between the first substrate and the second substrate. The first substrate includes a first base substrate, a pixel electrode disposed on the first base substrate and including a plurality of branch portions, and a first alignment layer disposed on the pixel electrode. The second substrate includes a second base substrate, a common electrode disposed on the second base substrate, and a second alignment layer disposed on the common electrode. | 05-09-2013 |
Kyungseon Tak, Hwaseong-Si KR
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20150070625 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display panel includes a first substrate, a second substrate that faces the first substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. The liquid crystal layer includes liquid crystal molecules that have negative dielectric anisotropy and a nematic-isotropic phase transition temperature (Tni) of about 110° C. or more. | 03-12-2015 |
20150153617 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A liquid crystal display device including a first substrate, a first alignment layer provided on the first substrate, a second substrate facing the first substrate, a second alignment layer provided on the second substrate, and a liquid crystal layer provided between the first substrate and the second substrate and including liquid crystal molecules. Each of the first alignment layer and the second alignment layer includes a main alignment layer and an alignment forming layer provided on the main alignment layer. The alignment forming layer is obtained by polymerizing two or more reactive mesogens having light absorption peaks in different wavelengths from each other. | 06-04-2015 |
20150198847 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device including a first substrate, a second substrate facing the first substrate, and a liquid crystal layer provided between the first substrate and the second substrate. The liquid crystal layer has a value of rotation viscosity (γl)/bending modulus of elasticity (K33) of about 6.0 to about 6.4 mPa*s/pN. | 07-16-2015 |
Kyung Seon Tak, Hwaseong-Si KR
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20150103299 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes: a first substrate, a plurality of pixel electrodes disposed on the first substrate and including a first subpixel electrode and a second subpixel electrode including a cross stem and a plurality of minute branches extending from the cross stem; a second substrate facing the first substrate; a first alignment layer disposed on the first substrate and the pixel electrode; a second alignment layer disposed on an inner surface of the second substrate; and a liquid crystal layer injected between the first substrate and the second substrate and including a prepolymer, a reaction initiator, and a polymerization reactor, of which a content of the reaction initiator is higher than a content of the polymerization reactor. | 04-16-2015 |
20150267118 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE SAME - A liquid crystal composition includes: a first category compound and a second category compound. The first category compound includes a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2, where each R is independently an alkyl group having a carbon number of 1 to 7, and each R may be the same or different. | 09-24-2015 |
Kyung Seon Tak, Hwaseong-Si, Gyeonggi-Do KR
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20150267116 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY COMPRISING THE SAME - A liquid crystal composition includes a first compound expressed by following Chemical Formula 1 and about 0.001 wt % to about 0.05 wt % of a second compound expressed by following Chemical Formula 2, | 09-24-2015 |
Mun Bae Tak, Daegu KR
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20140062098 | TWO STEP LINK HOOD LATCH APPARATUS FOR VEHICLE - A two step link hood latch apparatus for a vehicle allows a hood to be opened only with an operation of a release handle inside a vehicle. The apparatus includes a claw, the pawl, a pivot, and a link. The claw is disposed at a base plate to be rotatable, restrains a hood striker through a stop groove, and is restrained to a pawl through first and second stop ends in first step and second step lock states. The pawl is disposed at the base plate to be rotatable, and restrains the rotation of the claw in steps by using the stop protrusion. The pivot is disposed at the base plate to be rotatable in a hinge structure, and transmits a pulling force generated from the release handle. The link connects the pivot and the pawl and rotates the pawl in linkage with the pivot. | 03-06-2014 |
Nam-Kyun Tak, Buchen-Si KR
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20090022003 | MEMORY CELL STRUCTURES, MEMORY ARRAYS, MEMORY DEVICES, MEMORY CONTROLLERS, AND MEMORY SYSTEMS, AND METHODS OF MANUFACTURING AND OPERATING THE SAME - Example embodiments are directed to memory cell structures, memory arrays, memory devices, memory controllers, and memory systems using bipolar junction transistor (BJT) operation. | 01-22-2009 |
20110221001 | Memory cell structures, memory arrays, memory devices, memory controllers, and memory systems, and methods of manufacturing and operating the same - Example embodiments are directed to memory cell structures, memory arrays, memory devices, memory controllers, and memory systems using bipolar junction transistor (BJT) operation. | 09-15-2011 |
Nam-Kyun Tak, Bucheon-Si KR
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20090278194 | Capacitorless one-transistor semiconductor memory device having improved data retention abilities and operation characteristics - A capacitorless one transistor (1T) semiconductor device whose data storage abilities are increased and leakage current is reduced is provided. The capacitor-less 1T semiconductor device includes a buried insulating layer formed on a substrate, an active region formed on the buried insulating layer and including a source region, a drain region and a floating body formed between the source region and the drain region, and a gate pattern formed on the floating body, wherein the floating body includes a main floating body having the same top surface height as one of the source region and the drain region, and a first upper floating body formed between the main floating body and the gate pattern. | 11-12-2009 |
20100090280 | Transistors, semiconductor memory cells having a transistor and methods of forming the same - Transistors, semiconductor memory cells having a transistor and methods of forming the same are provided, the transistors may include a semiconductor substrate having a first semiconductor region. A gate pattern may be disposed on the first semiconductor region. Spacer patterns may each be disposed on a sidewall of the gate pattern. Second semiconductor regions and a third semiconductor regions may be disposed in the semiconductor substrate. The second semiconductor regions may be disposed under the spacer patterns. The third semiconductor regions may be disposed adjacent to the second semiconductor regions. The first semiconductor region may have a higher impurity ion concentration than the second semiconductor regions. | 04-15-2010 |
20100149886 | Semiconductor memory device and method for operating the same - In example embodiments, the semiconductor memory device, and the method for operating the semiconductor memory device, includes a memory cell array having a plurality of memory cells each formed of a transistor having a floating body. The transistors are coupled between a plurality of word lines, a plurality of source lines and a plurality of bit lines. Additionally, the memory cell array includes a controller configured to read data from at least one of the memory cells and restore data to the memory cell storing a first data state through a bit operation of the memory cell. The controller restores data to the memory cell by applying a first source-line control voltage to a selected source line and applying a first word-line control voltage to a selected word line in a first period of a read operation. Also, the controller is configured to restore data to the memory cell, which is storing a second data state, by applying a second source-line control voltage to the selected source line and applying a second word-line control voltage to the selected word line in a second period of the read operation. | 06-17-2010 |
20100149898 | Antifuses and program circuits having the same - Antifuses and program circuits having the same. The antifuses are embodied as a transistor. When a first power supply voltage is applied to a source, a first program voltage for causing impact ionization is applied to a gate and drain, and a second program voltage for causing channel initiated secondary electron/channel initiated secondary hole (CHISEL/CHISHL) is applied to a well, a dielectric material may be ruptured between the gate adjacent to the drain and the well so that an antifuse may be programmed. | 06-17-2010 |
20110042746 | SINGLE TRANSISTOR MEMORY DEVICE HAVING SOURCE AND DRAIN INSULATING REGIONS AND METHOD OF FABRICATING THE SAME - A single transistor floating-body dynamic random access memory (DRAM) device includes a floating body located on a semiconductor substrate and a gate electrode located on the floating body, the floating body including an excess carrier storage region. The DRAM device further includes source and drain regions respectively located at both sides of the gate electrode, and leakage shielding patterns located between the floating body and the source and drain regions. Each of the source and drain regions contact the floating body, which may be positioned between the source and drain regions. The floating body may also laterally extend under the leakage shielding patterns, which may be arranged at outer sides of the gate electrode. | 02-24-2011 |
Sang Yong Tak, Ansan-Si KR
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20120289108 | OXETANE-CYCLIC EPOXY COMPOUND, METHOD OF PREPARING THE SAME, AND COMPOSITE SHEET FOR DISPLAY SUBSTRATE INCLUDING THE SAME - An oxetane-cyclic epoxy compound represented by Formula 1: | 11-15-2012 |
20140142248 | COMPOSITE SHEET AND DISPLAY SUBSTRATE USING SAME - A composite sheet of the present invention comprises an oxetane-epoxy-based compound, represented by chemical formula 1, as a binder. | 05-22-2014 |
20140187111 | COMPOSITE SHEET AND DISPLAY SUBSTRATE USING SAME - A composite sheet of the present invention comprises an oxetane-(meth)acrylate compound, represented by chemical formula I, as a binder. | 07-03-2014 |
Sang-Yong Tak, Busan KR
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20120041102 | NOVEL EPOXY RESIN AND EPOXY RESIN COMPOSITION COMPRISING THE SAME - The present invention relates to a novel epoxy resin having improved heat-resistance, thermal expansion properties and processability, and to a thermosetting resin composition comprising the same. To this end, the present invention provides an epoxy resin of Chemical Formula 1 as disclosed in the Description, an epoxy resin composition comprising the same, and a packaging, substrate and transistor formed thereof. When a composition that contains an epoxy resin with a specific side functional group according to the present invention and/or an epoxy resin with a specific core structure is cured, a filler forms a strong chemical bond with the epoxy resin, thereby maximizing filling effects of the filler for the epoxy resin. Moreover, with the specific core structure, heat resistance and heat expansion properties of a cured product are substantially improved (CTE is reduced), and enhanced glass transition properties, strength and processability are demonstrated. | 02-16-2012 |
20140179836 | EPOXY COMPOUND HAVING ALKOXYSILYL GROUP, METHOD OF PREPARING THE SAME, COMPOSITION AND CURED PRODUCT COMPRISING THE SAME, AND USES THEREOF - Disclosed are an epoxy compound having an alkoxysilyl group, a composite of which exhibits good heat resistant properties and/or a cured product of which exhibits good flame retardant properties, a method of preparing the same, a composition comprising the same, and a cured product and a use of the composition. An alkoxysilylated epoxy compound comprising at least one of Chemical Formula S1 substituent and at least two epoxy groups in a core, a method of preparing the epoxy compound by an allylation, a claisen rearrangement, an epoxidation and an alkoxysilylation, an epoxy composition comprising the epoxy compound, and a cured product and a use of the composition are provided. The composite of the disclosed exhibits improved chemical bonding, good heat resistant properties, a low CTE, a high glass transition temperature or Tg-less The cured product of the composition exhibits good flame retardant properties. | 06-26-2014 |
20140308527 | ISOCYANURATE EPOXY COMPOUND HAVING ALKOXYSILYL GROUP, METHOD OF PREPARING SAME, COMPOSITION INCLUDING SAME, CURED PRODUCT OF THE COMPOSITION, AND USE OF THE COMPOSITION - Disclosed are an alkoxysilylated isocyanurate epoxy compound, a composite of which exhibiting low CTE and high glass transition temperature or Tg-less and/or a cured product of which exhibiting good flame retardant property, a method of preparing the same, a composition including the same, a cured product formed of the composition, and a use of the composition. An isocyanurate epoxy compound having an alkoxysilyl group and an epoxy group in a core; a method of manufacturing the epoxy compound by the epoxidation and alkoxysilylation of a starting material; an epoxy composition including the epoxy compound; and a cured product and a use thereof, are provided. A composite of the epoxy composition has improved bonding efficiency between alkoxysilyl group and filler and between alkoxysilyl groups, and has good heat resistance, low CTE, and high glass transition temperature or Tg-less. A cured product formed of the epoxy composition has good flame retardant property. | 10-16-2014 |
20150051316 | EPOXY COMPOUND HAVING ALKOXYSILYL GROUP, COMPOSITION AND HARDENED MATERIAL COMPRISING SAME, USE FOR SAME, AND PRODUCTION METHOD FOR EPOXY COMPOUND HAVING ALKOXYSILYL GROUP - The present invention relates to an alkoxysilylated epoxy compound, a composite exhibiting good heat resistance properties, low CTE and high glass transition temperature and not requiring a coupling agent, a composition including the same, a cured product formed of the composition, a use of the cured product, and a method of preparing the epoxy compound having alkoxysilyl group. An epoxy compound having an epoxy group and an alkoxysilyl group, a composition including the epoxy compound, a curing agent, a filler and/or a reaction catalyst, a cured product of the composition, and a use of the composition including an electronic part are provided. In a composite and/or cured product, the epoxy composition exhibits improved heat resistance properties, decreased CTE, and increased glass transition temperature or Tg-less. The cured product exhibits good flame retardant properties by the introduction of the alkoxysilyl group. | 02-19-2015 |
20150105493 | EPOXY COMPOUND HAVING ALKOXY SILYL GROUP, COMPOSITION COMPRISING SAME, CURED PRODUCT, USE THEREOF AND METHOD FOR PREPARING EPOXY COMPOUND HAVING ALKOXY SILYL GROUP - The present invention relates to an alkoxysilylated epoxy compound, a composite of which exhibits good heat resistance properties, low CTE and high glass transition temperature and not requiring a coupling agent, a composition including the same, a cured product formed of the composition, a use of the cured product, and a method of preparing the epoxy compound having alkoxysilyl group. An epoxy compound having an epoxy group and an alkoxysilyl group, a composition including the epoxy compound, a curing agent, a filler and/or a reaction catalyst, a cured product of the composition, and a use of the composition including an electronic part are provided. In a composite and/or cured product, the epoxy composition forms chemical bonds and exhibits improved heat resistance properties, decreased CTE, and increased glass transition temperature or Tg less. The cured product exhibits good flame retardant property by the introduction of the alkoxysilyl group. | 04-16-2015 |
20150148452 | COMPOSITION AND CURED ARTICLE COMPRISING INORGANIC PARTICLES AND EPOXY COMPOUND HAVING ALKOXYSILYL GROUP, USE FOR SAME, AND PRODUCTION METHOD FOR EPOXY COMPOUND HAVING ALKOXYSILYL GROUP - There is provided a composition including an alkoxysilylated epoxy compound, a composition of which exhibits good heat resistance properties, low CTE and high glass transition temperature or Tg-less and not requiring a separate coupling agent, and inorganic particles, a cured product formed of the composition, and a use of the cured product. An epoxy composition including an alkoxysilylated epoxy compound and inorganic particles, an epoxy composition including an epoxy compound, inorganic particles and a curing agent, a cured product of the composition, and a use of the composition are provided. Since chemical bonds may be formed between the alkoxysilyl group and the inorganic particles and between the alkoxysilyl groups, a composition of the composition including the alkoxysilylated epoxy compound and the inorganic particles exhibits improved heat resistance properties, decreased CTE, and increased glass transition temperature or Tg less. | 05-28-2015 |
20150203626 | NOVOLAC-BASED EPOXY COMPOUND, PRODUCTION METHOD FOR SAME, COMPOSITION AND CURED ARTICLE COMPRISING SAME, AND USE FOR SAME - A novolac epoxy compound having an alkoxysilyl group of which composite has low CTE and increase of glass transition temperature, and requiring no coupling agent, a production method thereof, an epoxy composition including the same and a cured article thereof, are provided. A novolac epoxy compound having an alkoxysilyl group of Formulae I-1 to I-4, a production method of the novolac epoxy compound having an alkoxysilyl group by the epoxidation, alkenylation and alkoxysilylation of a novolac epoxy compound, a production method of the novolac epoxy compound having an alkoxysilyl group by the epoxidation and alkoxysilylation of a novolac epoxy compound, an epoxy composition including the novolac epoxy compound having an alkoxysilyl group, and a cured article, are provided. The cured article, i.e., the composite of the epoxy composition has improved chemical bonding efficiency due to alkoxysilyl groups. Low CTE and high glass transition temperature are exhibited | 07-23-2015 |
20150247033 | EPOXY COMPOUND HAVING ALKOXYSILYL GROUP, METHOD FOR PREPARING THE SAME, COMPOSITION INCLUDING THE SAME, CURED PRODUCT MADE FROM THE COMPOSITION, AND USE OF THE COMPOSITION - Provided are an alkoxysilylated epoxy compound, a composite of which exhibits good heat resistance properties, particularly low CTE and increased glass transition temperature, and a cured product thereof exhibits good flame retardancy and composition of which does not require additional silane coupling agent, a method for preparing the same and a composition and a cured product including the same. An alkoxysilylated epoxy compound including at least one alkoxysilyl group and at least two epoxy groups, a method for preparing the same by epoxide ring-opening reaction of starting material and alkoxysilylation, an epoxy composition including the epoxy compound, and a cured product and a use of the composition are provided. Since chemical bonds may be formed between alkoxysilyl group and filler and between alkoxysilyl groups, chemical bonding efficiency of the composite may be improved. Thus, the composite exhibits good heat resistance properties and the cured product exhibits good flame retardancy. | 09-03-2015 |
20150361211 | EPOXY COMPOUND HAVING ALKOXYSILYL GROUP, METHOD OF PREPARING THE SAME, COMPOSITION AND CURED PRODUCT COMPRISING THE SAME, AND USE THEREOF - Provided are alkoxysilylated epoxy compounds, a composite of which exhibits good heat resistance properties, low CTE and increased glass transition temperature, and a cured product thereof exhibits good flame retardancy without requiring separate coupling agent, a method for preparing the same and a composition and a cured product including the same. An alkoxysilylated epoxy compound including an epoxy group and at least one alkoxysilyl group of an S1 substituent selected from Formulae S11 to S15 or an S2 substituent selected from Formulae S21 to S25; a method for preparing the same by epoxy ring-opening reaction of starting material and alkoxysilylation, an epoxy composition including the epoxy compound, and a cured product and a use of the composition, are provided. Since chemical bonds may be formed between alkoxysilyl group and filler and between alkoxysilyl groups, chemical bonding efficiency of the composite may be improved. | 12-17-2015 |
Seung Hyock Tak, Suwon-Si KR
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20100133857 | Apparatus for Locking Table of Seat Back - An apparatus for locking a table of a seat back to selectively secure the table in multiple stages, may include a base, a shaft coupled to the base and the table, an actuating arm fastened to the shaft and rotatable with the shaft, the actuating arm having actuating gear teeth, a locking arm rotatably provided on the base, wherein the locking arm includes locking gear teeth and the locking gear teeth is selectively engaged with the actuating gear teeth by the actuating arm such that when the actuating arm is rotated in a forward direction, the actuating gear teeth is engaged with the locking gear teeth or pass over the locking gear teeth according to rotational degree of the actuating arm, and a locking arm holding unit co-axially coupled with the actuating arm to the base and selectively activated by the actuating arm. | 06-03-2010 |
Soo-Young Tak, Suwon-Si KR
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20110171882 | CHEMICAL-MECHANICAL POLISHING APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES - A chemical-mechanical polishing (CMP) apparatus for manufacturing a semiconductor device. The apparatus includes: a spin chuck for supporting and rotating a semiconductor wafer; a polisher comprising a polishing pad for planarizing a surface of the semiconductor wafer, the polisher moving along the surface of the semiconductor wafer by a polishing arm; and a polisher supporting device for supporting the polisher and maintaining the polisher in a horizontal state, while polishing an edge part of the surface of the semiconductor wafer, in order to improve polishing uniformity of a center part and the edge part of the semiconductor wafer. Accordingly, polishing uniformity of the center part and edge part of the semiconductor wafer may be improved, and a height of the polisher supporting device may be optimized according to a polishing degree. Also, the polisher may be easily supported, wear and tear of the support head may be minimized, and the support head may function as a conditioner. | 07-14-2011 |
20110217910 | CHEMICAL MECHANICAL POLISHING APPARATUS - A chemical mechanical polishing apparatus includes a platen having a first region configured to support a wafer, and a second region disposed outside the first region. The chemical mechanical polishing apparatus further includes a polishing pad disposed on the platen, a pad head to which the polishing pad is attached, a slurry supply configured to supply a slurry onto the wafer, and an injection port disposing on the second region of the platen. The injection port is configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer. | 09-08-2011 |
20110217911 | POLISHING PAD FOR CHEMICAL MECHANICAL POLISHING PROCESS AND CHEMICAL MECHANICAL POLISHING APPARATUS INCLUDING THE SAME - A chemical mechanical polishing apparatus includes a platen configured to support and rotate a wafer, and a polishing pad facing the platen. The polishing pad includes a body having a groove with a rotational symmetric pattern. | 09-08-2011 |
Sung Jun Tak, Cheongju-Si KR
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20100060393 | ELECTROMAGNETIC LINEAR ACTUATOR - An electromagnetic linear actuator is disclosed that is capable of providing a large driving force adequately used for a high-voltage circuit breaker due to simplified structure and reduced manufacturing cost, the actuator comprising: stators each facing the other about an axle; a mover disposed with a moving core and a moving coil wrapping the moving core to magnetize the moving core during conduction, and capable of linearly and axially moving an interior of the stator; and permanent magnets, one facing the other, and fixedly mounted on both inner walls of the stator for providing a Lorentz force and reluctance force to the moving coil for movement when a current flows in the moving coil of the mover, and for providing a holding force to the mover for holding a position when the electric conduction to the moving coil of the mover is interrupted. | 03-11-2010 |
20120199456 | SPRING ACTUATOR FOR CIRCUIT BREAKER - Disclosed is a spring actuator for a circuit breaker, the spring actuator comprises a spring configured to provide an elastic energy serving to perform a circuit opening operation or a circuit closing operation of a circuit breaker; a spring housing providing a space to compress or extend the spring; a movable supporting plate linearly movable in the spring housing; a linearly-movable shaft linearly-movable having a first position for charging an elastic energy by compressing the spring, and having a second position for releasing the spring; a driving mechanism configured to provide a rotatory power for linearly-moving the linearly-movable shaft; one rigid link configured to convert the rotatory power provided from the driving mechanism to a linear power and to transmit the linear power to the linearly-movable shaft; and a latch mechanism having a position for latching the spring such that the spring maintains a charged state. | 08-09-2012 |
Sung Jun Tak, Cheongju KR
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20130168216 | THREE-POSITION ACTUATOR FOR SWITCHGEAR - An actuator according to the present disclosure comprises: a disconnecting switch drive shaft; a first drive gear axially coupled to the drive shaft; a first follower gear in engagement with the first drive gear; a first drive disc having a first drive roller; a first rotary shaft axially supporting the first follower gear and the first drive disc; an earthing switch drive shaft; a second drive gear axially coupled to the earthing switch drive shaft; a second follower gear in engagement with the second drive gear; a second drive disc having a second drive roller; a second rotary shaft; a zeneva disc having a pair of groove portions which the first drive roller or the second drive roller is inserted into or separated from; and a main shaft for switching the disconnecting switch or the earthing switch in accordance with the rotation of the zeneva disc. | 07-04-2013 |
Sung Jun Tak, Chungcheongbuk-Do KR
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20100230388 | ELECTRODE FOR VACUUM INTERRUPTER - Disclosed is an electrode for a vacuum interrupter, capable of reducing damage of contacts due to heat concentration to the center of the contacts, by reducing magnetic flux concentration to the center of the electrode, and capable of rapidly extinguishing an arc by diffusing the arc by forming a wide range of magnetic flux. | 09-16-2010 |
Sung Woo Tak, Busan KR
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20100045439 | Method for optimization in RFID location recognition system using blueprint - A method for optimization in an RFID location recognition system is developed to use in a blueprint in which an optimum location for installing an RFID reader is determined for using a blueprint so as to improve location recognition. The method includes the steps of inputting a blueprint and dividing a location recognition unit space from the blueprint; establishing a building interior space analysis model and an interior radio propagation space analysis model and deriving a building spatial significance and a radio propagation spatial significance; analyzing correlation between a building space and a radio propagation space and deriving a correlation coefficient; and defining an objective function for determining a location of a RFID reader based on the building spatial significance, the radio propagation spatial significance, and the correlation coefficient between the building space and the radio propagation space and performing optimization. | 02-25-2010 |
Woo-Nam Tak, Busan KR
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20120092647 | OPTICAL SENSING FRAME AND DISPLAY DEVICE THEREWITH - The present invention relates to display devices, and more particularly to an optical sensing frame in which an infrared sensor module is fastened to a case top with a bracket to secure an assembly margin and prevent the infrared sensor module from mismatching with a liquid crystal display module by relative movement; and a display device therewith, the optical sensing frame includes a case top having a frame shaped upper side, and sides bent and extended from four sides of the upper side perpendicular thereto, first to third brackets fastened to an inside of the upper side of the case top at three corners thereof respectively, and an infrared sensor module placed in each of the first to third brackets. | 04-19-2012 |
Yongsug Tak, Incheon KR
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20130022529 | TECHNIQUE FOR MANUFACTURING PLATINUM-MANGANESE DIOXIDE/CARBON COMPLEX FOR USE IN POSITIVE ELECTRODE OF LITHIUM-AIR BATTERY - Disclosed is a method for preparing a platinum-manganese dioxide/carbon complex for a positive-electrode material of a lithium-air battery. More specifically, a manganese dioxide/carbon complex is prepared by dispersing carbon in a manganese dioxide precursor solution and applying microwaves, filtering and drying to the resulting solution. Next a platinum-manganese dioxide/carbon complex is prepared by dispersing the manganese dioxide/carbon complex in ethylene glycol, adding a platinum precursor and applying microwaves to the resulting solution. The platinum-manganese dioxide/carbon complex synthesized according to the present invention exhibits lower overvoltage and higher current density in oxygen reduction and oxidation reactions as compared to either a manganese dioxide/carbon complex or a platinum/carbon complex. | 01-24-2013 |
20130029233 | METHOD FOR PREPARING MnO2/CARBON COMPOSITE, MNO2/CARBON COMPOSITE PREPARED BY THE METHOD, AND LITHIUM-AIR SECONDARY BATTERY INCLUDING THE COMPOSITE - Disclosed is a method for preparing an MnO | 01-31-2013 |
Yong-Suk Tak, Seongnam-Si KR
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20120299072 | SEMICONDUCTOR DEVICE HAVING METAL PLUG AND METHOD OF FORMING THE SAME - Provided is a semiconductor device including first, second and third source/drain regions. A first conductive plug in contact with the first source/drain regions, having a first width and a first height, and including a first material is provided. An interlayer insulating layer covering the first conductive plug and the substrate is disposed. A second conductive plug vertically penetrating the interlayer insulating layer to be in contact with the second source/drain regions, having a second width and a second height, and including a second material is provided. A third conductive plug vertically penetrating the interlayer insulating layer to be in contact with the third source/drain regions, having a third width and a third height, and including a third material is disposed. The second material includes a noble metal, a noble metal oxide or a perovskite-based conductive oxide. | 11-29-2012 |
Yong-Suk Tak, Hwasung-City KR
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20140138794 | SEMICONDUCTOR DEVICE HAVING SUPPORTER AND METHOD OF FORMING THE SAME - A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %. | 05-22-2014 |
Yoonheung Tak, Goyang-Si KR
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20130026505 | LARGE AREA ORGANIC LIGHT EMITTING DIODE DISPLAY - The invention relates to a large area organic light emitting diode display having a uniformed luminescence throughout the display area. The invention suggests an organic light emitting diode display comprising a thin film transistor substrate including a thin film transistor, a driving current line to supply an electric signal to the thin film transistor, a driving line contact hole to expose some portions of the driving current line, and an organic light emitting diode connected to the thin film transistor; a cap including a cap substrate and an auxiliary electrode disposed on a surface of the cap substrate with an area that is at least ⅓ of an area of the cap substrate; a conductive sealing material to electrically connect the auxiliary electrode and the driving current line through the driving line contact hole; and an organic adhesive joining the thin film transistor substrate and the cap. | 01-31-2013 |
20140084256 | ORGANIC LIGHT EMITTING DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode device and a method for manufacturing the same are disclosed. The organic light emitting diode device including a substrate, stacks disposed between a first electrode and a second electrode on the substrate, wherein the stacks including a first stack having a first blue layer and a second stack disposed on the first stack and having a second blue layer, and a first emission layer is formed at a partial region of the first stack, and a second emission layer is formed at a partial region of the second stack. | 03-27-2014 |
20140132488 | DISPLAY DEVICE HAVING BENT NON-DISPLAY AREA FOR REDUCED BEZEL WIDTH - The present disclosure relates to a display panel having a structure in which the left and right lateral side bezel areas are bent downward to reduce the width of bezel area visible to a user. The display device includes a transparent cover plate and a flexible display layer secured to the transparent cover plate. The transparent cover includes a flat portion. The flexible display layer includes a display area and a non-display area. The display area includes an upper flat area extending along a first plane below the flat portion of the transparent cover plate. The non-display area extends from at least an edge of the display area and at least part of the non-display area extends along a second plane for connection to receive a signal for displaying an image on the flexible display layer. A signal line between a signal source and the non-display area transmit the signal from the signal source to the non-display area. | 05-15-2014 |
20150034923 | WHITE ORGANIC LIGHT EMITTING DIODE DEVICE - Provided is a white organic light emitting diode device, including first and second electrodes facing each other above a substrate, first and second charge generation layers formed between the first electrode and the second electrode, a first stack disposed between the first electrode and the first charge generation layer and including a first light emitting layer, a second stack disposed between the first charge generation layer and the second charge generation layer and including a second light emitting layer, and a third stack disposed between the second charge generation layer and the second electrode and including a third light emitting layer, wherein two of the first to third light emitting layers emit a blue light and the rest light emitting layer emits a yellow-green light. | 02-05-2015 |
Yoonheung Tak, Yongin-Si KR
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20120313137 | ORGANIC LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting device and a method for manufacturing that same are discussed, which can reduce thickness and weight of the device as well as the manufacturing cost. The organic light emitting device includes according to an embodiment an organic light emitting diode (OLED) formed on a glass substrate; an adhesive layer formed to cover the OLED; and a metal foil formed on the adhesive layer to seal the OLED and bonded to the glass substrate, wherein the metal foil is formed of an alloy having the same or substantially the same thermal expansion coefficient as that of the glass substrate. | 12-13-2012 |
Yoon Heung Tak, Kyongsangbuk-Do KR
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20090146983 | CIRCUIT AND METHOD FOR DRIVING SELF LIGHT-EMITTING DISPLAY DEVICE - Disclosed is a circuit for driving a self light-emitting display device which itself emits light when an electric or other energy is inputted thereto and a method thereof. According to the circuit and method, the self light-emitting display device can be driven more stably and with a higher efficiency by adjusting the number of used bits and luminance of respective color components in accordance with a luminance change of an external light and keeping a constant contrast ratio irrespective of the adjustment of the bit numbers. | 06-11-2009 |
Yoon Heung Tak, Gumi-City KR
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20110020488 | APPARATUS FOR FABRICATING ELECTROLUMINESCENT DISPLAY DEVICE - The apparatus for fabricating an organic electroluminescent device which can distribute stress applied to the mask uniformly to form precise and reliable light emitting layers is disclosed. The apparatus for fabricating an electroluminescent device according to the present invention comprises a plurality of grippers disposed in a zigzag state at a periphery of a mask for clamping the mask, a plurality of jaws formed on each gripper and contacting with the mask, and power supplying units for supplying power to the grippers to stretch the mask. Each of the grippers is divided into a connecting section connected to the power supplying unit and a head section integrated into the connecting section, and a plurality of jaws are formed on the head section of each gripper, and odd (or even)-numbered grippers disposed at each side of the mask are disposed in a more forward position than even (or odd)-numbered grippers. Accordingly, the head section of each even (or odd)-numbered gripper is placed between the connection sections of two adjacent odd (or even)-numbered grippers. The head sections of even-numbered grippers and the head sections of odd-numbered grippers are arranged alternatively in two different imaginary lines. Also, the jaws are arranged in a line on the head section of each gripper or are arranged in a zigzag state on the head section of each gripper. At this time, the jaws are arranged by equal distance from each other. | 01-27-2011 |
Yoon-Heung Tak, Gyeonggi-Do KR
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20130015450 | Organic Light Emitting Display DeviceAANM Kim; Shin-HanAACI Gyeonggi-DoAACO KRAAGP Kim; Shin-Han Gyeonggi-Do KRAANM Ahn; Byung-ChulAACI SeoulAACO KRAAGP Ahn; Byung-Chul Seoul KRAANM Tak; Yoon-HeungAACI Gyeonggi-DoAACO KRAAGP Tak; Yoon-Heung Gyeonggi-Do KRAANM Han; Chang-WookAACI SeoulAACO KRAAGP Han; Chang-Wook Seoul KRAANM Kim; Do-HyungAACI SeoulAACO KRAAGP Kim; Do-Hyung Seoul KRAANM Lee; Jae-ManAACI SeoulAACO KRAAGP Lee; Jae-Man Seoul KRAANM Choi; Hong-SeokAACI SeoulAACO KRAAGP Choi; Hong-Seok Seoul KRAANM Bae; Sung-JoonAACI Gyeonggi-DoAACO KRAAGP Bae; Sung-Joon Gyeonggi-Do KRAANM Joung; Seung-RyongAACI Gyeonggi-DoAACO KRAAGP Joung; Seung-Ryong Gyeonggi-Do KR - An organic light emitting display device is provided to avoid color change due to a viewing direction. The organic light emitting display includes a light compensation layer having a refractive index different than that of an insulating layer. The organic light emitting display may be disposed at the side to which light emitted from an organic light emitting layer is entered to change the path and phase of light, thereby coinciding cavity peak phases for each wavelength of white light emitted from an organic light emitting unit. | 01-17-2013 |
20130105773 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE | 05-02-2013 |
20130161595 | Organic Light Emitting Display Device and Method of Manufacturing the Same - Provided are a method of manufacturing an organic light emitting display device and an organic light emitting display device manufactured by the method. The method includes calculating a peak-luminance current density for each of a red sub-pixel, a blue sub-pixel, a green sub-pixel, and a white sub-pixel, calculating an average use current density for each of the red sub-pixel, blue sub-pixel, green sub-pixel, and white sub-pixel; determining a size of each sub-pixel with the peak-luminance current density and the average use current density, and forming the sub-pixels with the determined sizes of the respective sub-pixels. The present invention sets the size of each sub-pixel in consideration of a peak-luminance current density and an average use current density, thus easily achieving the peak luminance and enhancing the color-coordinate life. | 06-27-2013 |
20130175512 | Organic Light Emitting Display Device - Disclosed is an organic light emitting display device. The organic light emitting display device includes a substrate, a thin film transistor formed on the substrate, a first electrode formed on the thin film transistor, an organic emission layer, and a second electrode formed on the organic emission layer. The organic emission layer includes a first stack that includes a first emission layer formed on the first electrode to emit first color light, a second stack that includes a second emission layer formed on the first electrode to emit second color light, and a charge generation layer formed between the first and second stacks. | 07-11-2013 |
20140087312 | METHOD FOR MANUFACTURING OF ORGANIC LIGHT EMITTING DISPLAY DEVICE - Disclosed is a method of manufacturing an organic light emitting display device. The method include forming a driving thin film transistor and passivation layer on a substrate, forming a bank layer at a boundary portion between adjacent sub-pixels, on the passivation layer, laminating a first photoresist film on the bank layer, forming a first photoresist pattern by irradiating IR light on the first photoresist film in an area except a first sub-pixel, depositing a first organic emission layer in the first sub-pixel area exposed by the first photoresist pattern, removing the first photoresist pattern, laminating a second photoresist film on the bank layer, forming a second photoresist pattern by irradiating IR light on the second photoresist film in an area except a second sub-pixel, depositing a second organic emission layer in the second sub-pixel area exposed by the second photoresist pattern, and removing the second photoresist pattern. | 03-27-2014 |
20150060834 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - An organic electroluminescent display device is disclosed which includes: a lower substrate including a first substrate defined into red, green and blue sub-pixel regions, first and second switching elements formed in the red and green sub-pixel regions, first and second anodes each connected to the first and second switching elements, and a first organic light emission layer entirely formed on the first substrate provided with the first and second anodes; and an upper substrate including a second substrate, red and green color filter layers formed on the second substrate corresponding to the red and green sub-pixel regions, a third switching element formed on the second substrate corresponding to the blue sub-pixel region, a third anode connected to the third switching element, and a second organic light emission layer entirely formed on the second substrate provided with the red and green color filter layers and the third anode. | 03-05-2015 |
20150069369 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - An organic electroluminescent display device is disclosed which includes a lower substrate including a first substrate defined into red, green and blue sub-pixel regions, first and second switching elements formed in the red and green sub-pixel regions, first and second anodes each connected to the first and second switching elements, and a first organic light emission layer entirely formed on the first substrate provided with the first and second anodes; and an upper substrate including a second substrate, red and green color filter layers formed on the second substrate corresponding to the red and green sub-pixel regions, a third switching element formed on the second substrate corresponding to the blue sub-pixel region, a third anode connected to the third switching element, and a second organic light emission layer entirely formed on the second substrate provided with the red and green color filter layers and the third anode. | 03-12-2015 |
Yoon-Heung Tak, Goyang-Si KR
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20130153867 | ORGANIC LIGHT EMITTING DEVICE - Discussed is an organic light emitting device that exhibits improved efficiency and driving voltage by applying a novel material facilitating charge generation to a charge generation layer. The charge generation layer contains a compound represented by the following formulae: | 06-20-2013 |
20140117322 | ORGANIC LIGHT EMITTING DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display panel includes a light emitting diode array substrate and an encapsulation substrate adhered to the light emitting array diode substrate by an adhesive film. The light emitting array diode substrate includes a driving thin film transistor formed on a substrate, an organic light emitting diode including a first electrode connected to the driving thin film transistor, an organic emission layer formed on the first electrode, and a second electrode formed on the organic emission layer, and first and second passivation layers formed on the second electrode. In this regard, the first passivation layer is formed of an organic compound having at least one of the structural formulae described in Formula 1 below: | 05-01-2014 |
Yoon-Heung Tak, Goyang-Si, Gyeonggi-Do KR
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20140183499 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device with enhanced luminous efficiency and color viewing angle and a method of manufacturing the same are disclosed. The method includes forming a first electrode of each of red, green, blue and white sub-pixels on a substrate, forming a white organic common layer on the first electrodes, and forming a second electrode on the white organic common layer, wherein the first electrodes each includes multiple transparent conductive layers and is formed such that a thickness of the first electrode of each of two sub-pixels among the red, green, blue and white sub-pixels is greater than a thickness of the first electrode of each of the other two sub-pixels, and at least two layers excluding the lowermost layer among the multiple transparent conductive layers of each first electrode are formed to cover opposite sides of the lowermost layer. | 07-03-2014 |
Yoon-Heung Tak, Gyeongsangbuk-Do KR
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20100127615 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD AND APPARATUS OF MANUFACTURING THE SAME - A an organic electroluminescent display device includes an array substrate including a driving thin film transistor in a pixel region on a first substrate; an opposing substrate including an organic electroluminescent diode in the pixel region on a second substrate; an adhesive layer filling a space between the array substrate and the opposing substrate; and a connection spacer to electrically connect the organic electroluminescent diode with the driving thin film transistor. | 05-27-2010 |
Yoon Sung Tak, Gyeonggi-Do KR
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20150189259 | STEREOPSIS IMAGE DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - A stereopsis image display device is provided that prevents 3D crosstalk from being generated and enables a lenticular film to be freely bent. The stereopsis image display device comprises a plurality of data lines arranged in a first direction; a plurality of gate lines arranged in a second direction; a plurality of sub pixels defined by crossing between the plurality of gate lines and the plurality of data lines; and a lenticular film provided on the plurality of sub pixels, wherein the plurality of sub pixels are provided in a horizontal 2-domain structure. | 07-02-2015 |
Yoo Sung Tak, Gyeonggi-Do KR
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20160119577 | DIGITAL-IMAGE TRANSMISSION APPARATUS WHICH PERFORMS COMMUNICATION, SELF-DIAGNOSIS, AND CONTROL - Provided is a digital-image transmission apparatus including a transmitting unit connected to a host device and a receiving unit connected to a display device. The transmitting unit includes a host-side additional-communication control unit that controls additional communication for digital image transmission. The host-side additional-5 communication control unit performs communication with an external device to diagnose an operation state of the transmitting unit, transmit a diagnosis result to the external device, and control an operation of the transmitting unit. | 04-28-2016 |
Young Jae Tak, Yongin-Si KR
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20130135293 | THREE DIMENSIONAL IMAGE DISPLAY DEVICE - A three dimensional image display device includes a liquid crystal display panel assembly which includes a first pixel and a second pixel disposed adjacent to each other in a vertical direction. The first pixel comprises a first subpixel and a second subpixel disposed adjacent to each other in the vertical direction, and the second pixel includes a third subpixel and a fourth subpixel which are disposed adjacent to each other in the vertical direction. The first subpixel and the third subpixel, or the second subpixel and the fourth subpixel display black in a three dimensional (3D) display mode and display a normal image in a two dimensional (2D) display mode. | 05-30-2013 |
20130229400 | THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor display panel capable of minimizing a bezel and a manufacturing method thereof are provided. The thin film transistor display panel includes: a substrate; a plurality of gate lines and data lines that cross each other on the substrate; a thin film transistor connected to the gate line and the data line; a pixel electrode connected to the thin film transistor; and a plurality of gate voltage supply lines arranged in a parallel direction with the data lines and connected to the plurality of gate lines, respectively, in which one pixel area is defined by two adjacent gate lines and two adjacent data lines, two pixel electrodes are formed in one pixel area, and the gate voltage supply lines pass between the two pixel electrodes formed in the same pixel area. | 09-05-2013 |
20130241905 | STEREOSCOPIC DISPLAY DEVICE - A stereoscopic display device is disclosed. The stereoscopy display device includes pixels arranged in rows and columns. The pixels are divided into pixel groups, each including a plurality of adjacent rows. Interference prevention patterns may be located between the pixel groups. Phase delay layers are disposed on the interference prevention patterns and have different phases. At least one storage electrode line may extend between the pixels in a direction of the rows. The stereoscopic display device prevents interference between left and right-eye images and has high luminance. | 09-19-2013 |
Young-Jo Tak, Pohang-Si KR
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20130139966 | JIG FOR USE IN ETCHING AND CHEMICAL LIFT-OFF APPARATUS INCLUDING THE SAME - A jig for use in etching supports an etching target while an etching process is performed and surrounds a remaining region of the etching target except for a portion of the etching target, so as to expose the portion of the etching target. Accordingly, a stable support of the etching target during the etching process may be provided, and thus an etching of an undesired region may be prevented, and a stable production yield may be accomplished. | 06-06-2013 |
Young-Jo Tak, Hwaseong-Si KR
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20110037098 | Substrate structures and methods of manufacturing the same - Substrate structures and methods of manufacturing the substrate structures. A substrate structure is manufactured by forming a protrusion area of a substrate under a buffer layer, and forming a semiconductor layer on the buffer layer, thereby separating the substrate from the buffer layer except in an area where the protrusion is formed. The semiconductor layer on the buffer layer not contacting the substrate has freestanding characteristics, and dislocation or cracks may be reduced and/or prevented. | 02-17-2011 |
20110121330 | Gallium nitride light emitting devices and methods of manufacturing the same - A gallium nitride (GaN) light emitting device and a method of manufacturing the same are provided, the method including sequentially forming a buffer layer and a first nitride layer on a silicon substrate, and forming a plurality of patterns by dry etching the first nitride layer. Each pattern includes a pair of sidewalls facing each other. A reflective layer is deposited on the first nitride layer so that one sidewall of the pair is exposed by the reflective layer. An n-type nitride layer that covers the first nitride layer is formed by horizontally growing an n-type nitride from the exposed sidewall, and a GaN-based light emitting structure layer is formed on the n-type nitride layer. | 05-26-2011 |
20110127489 | Light emitting device and method of manufacturing the same - Example embodiments relate to a light emitting device and a method of fabricating the light emitting device. The light emitting device may include an n-type clad layer including a plurality of nitride semiconductor layers, at least one interlayer disposed between the plurality of nitride semiconductor layers, a via hole in which a first electrode is formed, a p-type clad layer, and an active layer between the n-type clad layer and the p-type clad layer. | 06-02-2011 |
20110127554 | Light emitting device and method of manufacturing the same - A light emitting device may include a substrate, an n-type clad layer, an active layer, and a p-type clad layer. A concave-convex pattern having a plurality of grooves and a mesa between each of the plurality of grooves may be formed on the substrate, and a reflective layer may be formed on the surfaces of the plurality of grooves or the mesa between each of the plurality of grooves. Therefore, light generated in the active layer may be reflected by the reflective layer, and extracted to an external location. | 06-02-2011 |
20110266522 | Semiconductor device - A semiconductor device may reduce a dislocation density and tensile stress by forming a plurality of interlayers between neighboring clad layers. The semiconductor device may include a plurality of clad layers on a substrate and a plurality of interlayers between neighboring clad layers. | 11-03-2011 |
20110272712 | Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same - Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer. | 11-10-2011 |
20110291120 | Light Emitting Devices Using Connection Structures And Methods Of Manufacturing The Same - Example embodiments of the present invention relate to a light emitting device having a connection structure and a method of manufacturing the light emitting device. The method of manufacturing may include forming a light emitting region and electrode layers on a substrate in which a plurality of cell regions and a bridge for partially connecting the cell regions are disposed, thereby providing a light emitting device that controls stress with relative ease and integrates electrical connections between the cell regions. | 12-01-2011 |
20120007143 | SUBSTRATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A substrate structure and method of manufacturing the same are disclosed. The substrate structure may includes a substrate on which a plurality of protrusions are formed on one surface thereof and a plurality of buffer layers formed according to a predetermined pattern and formed spaced apart from each other on the plurality of protrusions. | 01-12-2012 |
20120074385 | Semiconductor Devices And Methods of Manufacturing The Same - A semiconductor device includes a substrate, a buffer layer on the substrate, and a plurality of nitride semiconductor layers on the buffer layer. The semiconductor device further includes at least one masking layer and at least one inter layer between the plurality of nitride semiconductor layers. The at least one inter layer is on the at least one masking layer. | 03-29-2012 |
20120153261 | Semiconductor Device And Method Of Manufacturing The Same - Example embodiments relate to a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device may include a pre-seeding layer and a nucleation layer. The pre-seeding layer may include a first material for pre-seeding and a second material for masking so as to reduce tensile stress. | 06-21-2012 |
20120175662 | VERTICAL LIGHT EMITTING DEVICE - According to an example embodiment, a vertical light emitting device (LED) includes a semiconductor layer including an active layer configured to emitting light, a first electrode on a first side of the semiconductor layer, and a second electrode on a second side of the semiconductor layer opposite to the first electrode. At least one of the first and second electrodes includes a metal electrode pattern and a transparent electrode pattern. The transparent electrode pattern is in a region between segment electrodes of the metal electrode pattern. The transparent electrode pattern is electrically connected to the metal electrode pattern. | 07-12-2012 |
20120187374 | Semiconductor Device - According to example embodiments, a semiconductor device includes a first layer and second layer. The first layer includes a nitride semiconductor doped with a first type dopant. The second layer is below the first layer and includes a high concentration layer. The high concentration layer includes the nitride semiconductor doped with the first type dopant and has a doping concentration higher than a doping concentration of the first layer. | 07-26-2012 |
20130309794 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light emitting device may include a substrate, an n-type clad layer, an active layer, and a p-type clad layer. A concave-convex pattern having a plurality of grooves and a mesa between each of the plurality of grooves may be formed on the substrate, and a reflective layer may be formed on the surfaces of the plurality of grooves or the mesa between each of the plurality of grooves. Therefore, light generated in the active layer may be reflected by the reflective layer, and extracted to an external location. | 11-21-2013 |
20130328054 | GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A gallium nitride based semiconductor device includes a silicon-based layer doped simultaneously with boron (B) and germanium (Ge) at a relatively high concentration, a buffer layer on the silicon-based layer, and a nitride stack on the buffer layer. A doping concentration of boron (B) and germanium (Ge) may be higher than 1×10 | 12-12-2013 |
20130334495 | SUPERLATTICE STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A superlattice structure, and a semiconductor device including the same, include a plurality of pairs of layers are in a pattern repeated at least two times, in which a first layer and a second layer constitute a pair, the first layer is formed of Al | 12-19-2013 |
20130334496 | SEMICONDUCTOR DEVICE, SUPERLATTICE LAYER USED IN THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a silicon substrate; a nitride nucleation layer disposed on the silicon substrate; at least one superlattice layer disposed on the nitride nucleation layer; and at least one gallium nitride-based semiconductor layer disposed on the superlattice layer. The at least one superlattice layer includes a stack of complex layers, each complex layer including a first layer and a second layer such that each of the complex layers has a plurality of nitride semiconductor layers having different compositions, at least one of the plurality of nitride semiconductor layers having a different thickness based on a location of the at least one nitride semiconductor layer within the stack, and at least one stress control layer having a thickness greater than a critical thickness for pseudomorphic growth. | 12-19-2013 |
20140001438 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME | 01-02-2014 |
20140014990 | LIGHT-EMITTING DEVICE PACKAGES AND METHODS OF MANUFACTURING THE SAME - Lights-emitting device (LED) packages, and methods of manufacturing the same, include at least one light-emitting structure. The at least one light-emitting structure includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer that are sequentially stacked, at least one first metal layer connected to the first compound semiconductor layer, a second metal layer connected to the second compound semiconductor layer, a substrate having a conductive bonding layer on a first surface of the substrate, and a bonding metal layer configured for eutectic bonding between the at least one first metal layer and the conductive bonding layer. | 01-16-2014 |
20140042391 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTORING THE SAME - A semiconductor device includes a first coalescent layer, a second coalescent layer, a nitride stacked structure on the second coalescent layer, and a third layer between the first and second coalescent layers. The first coalescent layer includes a plurality of formations that are partially merged, and the third layer is disposed on the formations to allow a first type of stress to be generated in an area which includes the first coalescent layer and a second type of stress to be generated in an area which includes the second coalescent layer. | 02-13-2014 |
20140042492 | SEMICONDUCTOR BUFFER STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE USING THE SEMICONDUCTOR BUFFER STRUCTURE - A semiconductor buffer structure may include a silicon substrate and a buffer layer that is formed on the silicon substrate. The buffer layer may include a first layer, a second layer formed on the first layer, and a third layer formed on the second layer. The first layer may include Al | 02-13-2014 |
20140045284 | SEMICONDUCTOR BUFFER STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING SEMICONDUCTOR BUFFER STRUCTURE - A method of manufacturing a semiconductor device includes forming a silicon substrate, forming a buffer layer on the silicon substrate, and forming a nitride semiconductor layer on the buffer layer. The buffer layer includes a first layer, a second layer, and a third layer. The first layer includes Al | 02-13-2014 |
20140057381 | VERTICAL LIGHT-EMITTING DEVICES HAVING PATTERNED EMITTING UNIT AND METHODS OF MANUFACTURING THE SAME - Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer. | 02-27-2014 |
20140113437 | SUBSTRATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A substrate structure and method of manufacturing the same are disclosed. The substrate structure may includes a substrate on which a plurality of protrusions are formed on one surface thereof and a plurality of buffer layers formed according to a predetermined pattern and formed spaced apart from each other on the plurality of protrusions. | 04-24-2014 |
20140353677 | LOW-DEFECT SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a second growth condition different from the first growth condition. | 12-04-2014 |
20150060762 | SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING HOLE INJECTION LAYER - According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type. | 03-05-2015 |
20150079769 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a first coalescent layer, a second coalescent layer, a nitride stacked structure on the second coalescent layer, and a third layer between the first and second coalescent layers. The first coalescent layer includes a plurality of formations that are partially merged, and the third layer is disposed on the formations to allow a first type of stress to be generated in an area which includes the first coalescent layer and a second type of stress to be generated in an area which includes the second coalescent layer. | 03-19-2015 |
20150111369 | SEMICONDUCTOR BUFFER STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTOR BUFFER STRUCTURE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE USING THE SEMICONDUCTOR BUFFER STRUCTURE - A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer. | 04-23-2015 |
20150118800 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - A semiconductor device includes a substrate, a buffer layer on the substrate, and a plurality of nitride semiconductor layers on the buffer layer. The semiconductor device further includes at least one masking layer and at least one inter layer between the plurality of nitride semiconductor layers. The at least one inter layer is on the at least one masking layer. | 04-30-2015 |
20150123140 | SEMIPOLAR NITRIDE SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME - Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7≦k≦13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0. | 05-07-2015 |