Patent application number | Description | Published |
20080298021 | Notebook computer with hybrid diamond heat spreader - Embodiments of a device are described. This device includes an integrated circuit and a heat spreader coupled to the integrated circuit. This heat spreader includes a first layer of an allotrope of carbon. Note that the allotrope of carbon has an approximately face-centered-cubic crystal structure. Furthermore, the allotrope of carbon has a thermal conductivity greater than a first pre-determined value and a specific heat greater than a second pre-determined value. | 12-04-2008 |
20120162095 | INTERNAL OPTICAL COATING FOR ELECTRONIC DEVICE DISPLAY - An internal optical coating includes multiple layers of different materials and thicknesses and is disposed between a transparent display cover and a visual display unit for an electronic device display. The optical coating transmits most visible light, reflects most non-visible light and substantially absorbs blackbody radiation generated from within the electronic device. The multiple layers comprise two or more materials having alternating low and high indices of refraction, and can include 36 or more layers, each having a thickness ranging from 10 to 400 nanometers. The arrangement and thicknesses of the layers are designed based upon the thickness and optical properties of the transparent display cover. The internal optical coating can also be specially formulated to replace a typical internal anti-reflective coating proximate the visual display unit. | 06-28-2012 |
20120162751 | OPTICAL COATING FOR ELECTRONIC DEVICE DISPLAY - An optical coating includes multiple layers of different materials and thicknesses and is disposed proximate a transparent display cover for an electronic device display. The optical coating transmits most visible light, reflects most non-visible light and substantially absorbs blackbody radiation generated from within the electronic device. The optical coating can be readily removable from the electronic device display either alone or in combination with a removable transparent display cover. The multiple layers comprise two or more materials having alternating low and high indices of refraction, and can include 36 or more layers, each having a thickness ranging from 10 to 400 nanometers. The arrangement and thicknesses of the layers are designed based upon the thickness and optical properties of the transparent display cover. | 06-28-2012 |
20120224951 | COMPACT FAN ASSEMBLY WITH THRUST BEARING - A fan assembly for a computing device is disclosed. The device can include an impeller having a number of blades and a motor for turning the blades. The motor can turn the blades via a magnetic interaction between the impeller and the motor. A thrust bearing can be used to control a position of the impeller relative to the motor. In particular, the impeller can be configured to rotate around an axis and the thrust bearing can be used to control movement of the impeller in a direction aligned with the axis. In one embodiment, the impeller can be configured to generate aerodynamic forces, such as lift, and the parameters associated with the thrust bearing can be selected to counteract the aerodynamic forces so that the impeller remains within a desired positional range relative to the motor. | 09-06-2012 |
20130319638 | THERMAL ARCHITECTURE - The described embodiment relates generally to the field of thermal management. More specifically an apparatus for cooling a unibody computing device with obscured inlet and outlet vents is disclosed. Inlet vents are arranged on a bottom surface of the unibody computing device and then exhaust air is vented out from a rear surface of the computing device. The rear vents can be obscured by a stand designed to support the weight of the computing device. By venting exhaust air to either side of the support stand exhaust air can be prevented from being drawn back into the inlet vents, thereby avoiding an overheating condition. | 12-05-2013 |
20130327507 | OPTIMIZED VENT WALLS IN ELECTRONIC DEVICES - The disclosed embodiments related to a component for use in a portable electronic device. The component includes a wall of the portable electronic device, containing an intake zone that includes a set of intake vents directed at a first angle toward one or more heat-generating components of the portable electronic device. The wall also includes an exhaust zone containing a set of exhaust vents directed at a second angle out of the portable electronic device. | 12-12-2013 |
20130329357 | GASKETS FOR THERMAL DUCTING AROUND HEAT PIPES - The disclosed embodiments provide a component for a portable electronic device. The component includes a gasket containing a rigid portion disposed around a bottom of a heat pipe, wherein the rigid portion forms a duct between a fan and an exhaust vent of the electronic device. The gasket also includes a first flexible portion bonded to the rigid portion, wherein the first flexible portion comprises a flap that is open during assembly of the heat pipe in the electronic device and closed over the heat pipe and the rigid portion to seal the duct around the heat pipe after the assembly. | 12-12-2013 |
20140003083 | THERMAL MITIGATION OF FLAT-PANEL DISPLAYS | 01-02-2014 |
20140085911 | THERMAL BLOCKER FOR MOBILE DEVICE SKIN HOT SPOT MANAGEMENT - The described embodiments relate generally to thermal management and more particularly to a method and apparatus for providing thermal insulation from relatively small heat sources in small form factor electronic devices. An insulator layer can be placed between a small heat source and an exterior surface of the device, such as a cover glass layer. In one embodiment, a graphite layer can also be included between the cover glass layer and the insulator layer to spread any transmitted heat across the cover glass layer. | 03-27-2014 |
20140185219 | COOLING ELECTRONIC DEVICES USING FLOW SENSORS - An electronic device can be provided with a housing having at least one wall defining a cavity and a flow sensor at least partially contained within the cavity. The flow sensor may be configured to detect a flow characteristic related to the flow of a fluid through a first portion of the cavity. The electronic device may also include a processor configured to alter a performance characteristic of the electronic device based on the detected flow characteristic. | 07-03-2014 |
20140362519 | COMPUTER SYSTEM - A desktop computing system having at least a central core surrounded by housing having a shape that defines a volume in which the central core resides is described. The housing includes a first opening and a second opening axially displaced from the first opening. The first opening having a size and shape in accordance with an amount of airflow used as a heat transfer medium for cooling internal components, the second opening defined by a lip that engages a portion of the airflow in such a way that at least some of the heat transferred to the air flow from the internal components is passed to the housing. | 12-11-2014 |
20140362522 | COMPUTER THERMAL SYSTEM - The present application describes various embodiments regarding systems and methods for providing efficient heat rejection for a lightweight and durable compact computing system having a small form factor. The compact computing system can take the form of a desktop computer. The desktop computer can include a monolithic top case having an integrated support system formed therein, the integrated support system providing structural support that distributes applied loads through the top case preventing warping and bowing. A mixed flow fan is utilized to efficiently pull cooling air through the compact computing system. | 12-11-2014 |
20140362523 | COMPUTER THERMAL MANAGEMENT - The present application describes various embodiments regarding systems and methods for providing efficient heat rejection for a lightweight and durable compact computing system having a small form factor. The compact computing system can take the form of a desktop computer. The desktop computer can include a monolithic top case having an integrated support system formed therein, the integrated support system providing structural support that distributes applied loads through the top case preventing warping and bowing. A mixed flow fan is utilized to efficiently pull cooling air through the compact computing system. | 12-11-2014 |
Patent application number | Description | Published |
20080259486 | METHODS FOR ENABLING FUNCTIONALITY IN MULTI-MODAL DATA STORAGE SYSTEMS - A method for enabling different modes on a multi-modal data storage system such as a tape-based data storage system includes enabling a data storage system to operate in at least one of two modes, a first of the modes being different than a second of the modes. In one embodiment, the data storage system has all physical components required to operate in the first and second modes. An ability to operate in at least one of the modes is not allowed prior to enabling the data storage system to operate in the at least one of the modes. | 10-23-2008 |
20090133468 | WEAR GAUGE AND METHOD OF USE - A wear gauge is provided for simulating the wear of a magnetic recording component at its interface with a magnetic storage medium comprising a wear gauge block having a wear surface that substantially approximates the geometrical dimensions and contour of the working surface of the magnetic recording component, wherein the wear surface has a coating of transparent material. A test method comprises mounting the wear gauge in a test fixture, positioning a tape and adjusting the over wrap angle at edges of the wear surface, choosing the desired tape tension, speed and runtime, and running the tape, preferably unidirectionally, in operational contact with the wear surface for the desired runtime. The wear surface is inspected under white light illumination to observe and record locations of interferometric color changes on the wear surface. The color changes are correlated to thickness changes of the transparent coating on the wear surface. | 05-28-2009 |
20090135528 | MAGNETIC READER WITH PIGGYBACKED FENCE - A magnetic head comprises a plurality of elements selected from a group consisting of readers and writers. A servo sensor is positioned towards the elements, the servo sensor being adapted for sensing a first servo track of a magnetic medium. A fence is positioned towards the servo sensor and aligned therewith in a tape travel direction. A magnetic head in another embodiment includes a substrate and a reader positioned above the substrate, the reader having a sensor and shields sandwiching the sensor. A fence is positioned towards the reader on an opposite side thereof from the substrate, the fence being aligned with the reader in a travel direction of a magnetic medium passing thereby. | 05-28-2009 |
20100118435 | MAGNETIC HEAD WITH PLANAR OUTRIGGER - A magnetic head according to one embodiment includes a substrate having a tape bearing surface; a plurality of elements coupled to the substrate and positioned towards the first tape bearing surface, the elements being selected from a group consisting of readers, writers, and combinations thereof; and an outrigger held in a fixed position relative to the substrate, the outrigger having a tape bearing surface; wherein the outrigger tape bearing surface and the substrate tape bearing surface lie along planes, the planes being offset from one another. | 05-13-2010 |
20110059336 | MAGNETIC HEAD WITH TEXTURED SURFACES - A method according to one embodiment includes contacting an oxidant with an AlTiC portion of a magnetic head for recessing TiC grains of the AlTiC portion. A method according to another embodiment includes contacting a peroxide with an AlTiC portion of a magnetic head for recessing TiC grains of the AlTiC portion from a media bearing surface of the AlTiC portion. A magnetic head according to yet another embodiment includes an AlTiC portion having a media bearing surface; and a thin film portion coupled to the AlTiC portion, wherein TiC grains of the AlTiC portion are recessed from the media bearing surface. | 03-10-2011 |
Patent application number | Description | Published |
20110034035 | STRESS MANAGEMENT FOR TENSILE FILMS - The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves the formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer. | 02-10-2011 |
20110034039 | FORMATION OF SILICON OXIDE USING NON-CARBON FLOWABLE CVD PROCESSES - A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-and-nitrogen containing precursor with a radical precursor, and depositing a silicon-and-nitrogen containing layer on a substrate. The silicon-and-nitrogen containing layer is then converted to the silicon oxide layer. | 02-10-2011 |
20110081782 | POST-PLANARIZATION DENSIFICATION - Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma. | 04-07-2011 |
20110111137 | CURING NON-CARBON FLOWABLE CVD FILMS - A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-containing precursor with a radical-nitrogen-and/or-hydrogen precursor, and depositing a silicon-nitrogen-and-hydrogen-containing layer on a substrate. The conversion of the silicon-nitrogen-and-hydrogen-containing layer to a silicon-and-oxygen-containing layer is then initiated by a low temperature anneal (a “cure”) in an ozone-containing atmosphere. The conversion of the silicon-and-nitrogen film to silicon oxide in the ozone-containing atmosphere may be incomplete and augmented by a higher temperature anneal in an oxygen-containing environment. | 05-12-2011 |
20110159703 | DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO - Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H | 06-30-2011 |
20110165781 | FLOWABLE DIELECTRIC USING OXIDE LINER - Methods of forming silicon oxide layers are described. The methods include mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing a hydrogen-and-nitrogen-containing precursor into the plasma. Prior to depositing the silicon-and-nitrogen-containing layer, a silicon oxide liner layer is formed to improve adhesion, smoothness and flowability of the silicon-and-nitrogen-containing layer. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film. Methods also include forming a silicon oxide liner layer before applying a spin-on silicon-containing material. | 07-07-2011 |
20110212620 | POST-PLANARIZATION DENSIFICATION - Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma. | 09-01-2011 |
20110217851 | CONFORMAL LAYERS BY RADICAL-COMPONENT CVD - Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., a silicon-nitrogen-hydrogen (Si—N—H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. The carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with the radical-nitrogen precursor. Because the silicon-and-nitrogen film is formed without carbon, the conversion of the film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows the optical properties of the conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer has been found to improve the wetting properties and allows flowable films to more completely fill the trench. | 09-08-2011 |
20120085733 | SELF ALIGNED TRIPLE PATTERNING - Embodiments of the present invention pertain to methods of forming features on a substrate using a self-aligned triple patterning (SATP) process. A stack of layers is patterned near the optical resolution of a photolithography system using a high-resolution photomask. The heterogeneous stacks are selectively etched to undercut a hard mask layer beneath overlying cores. A dielectric layer, which is flowable during formation, is deposited and fills the undercut regions as well as the regions between the heterogeneous stacks. The dielectric layer is anisotropically etched and a conformal spacer is deposited on and between the cores. The spacer is anisotropically etched to leave two spacers between each core. The cores are stripped and the spacers are used together with the remaining hard mask features to pattern the substrate at triple the density of the original pattern. | 04-12-2012 |
20120142192 | OXIDE-RICH LINER LAYER FOR FLOWABLE CVD GAPFILL - The formation of a gap-filling silicon oxide layer with reduced volume fraction of voids is described. The deposition involves the formation of an oxygen-rich less-flowable liner layer before an oxygen-poor more-flowable gapfill layer. However, the liner layer is deposited within the same chamber as the gapfill layer. The liner layer and the gapfill layer may both be formed by combining a radical component with an unexcited silicon-containing precursor (i.e. not directly excited by application of plasma power). The liner layer has more oxygen content than the gapfill layer and deposits more conformally. The deposition rate of the gapfill layer may be increased by the presence of the liner layer. The gapfill layer may contain silicon, oxygen and nitrogen and be converted at elevated temperature to contain more oxygen and less nitrogen. The presence of the gapfill liner provides a source of oxygen underneath the gapfill layer to augment the gas phase oxygen introduced during the conversion. | 06-07-2012 |
20120177846 | RADICAL STEAM CVD - Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment. | 07-12-2012 |
20120238108 | TWO-STAGE OZONE CURE FOR DIELECTRIC FILMS - A method of forming a silicon oxide layer is described. The method increases the oxygen content of a dielectric layer by curing the layer in a two-step ozone cure. The first step involves exposing the dielectric layer to ozone while the second step involves exposing the dielectric layer to ozone excited by a local plasma. This sequence can reduce or eliminate the need for a subsequent anneal following the cure step. The two-step ozone cures may be applied to silicon-and-nitrogen-containing film to convert the films to silicon oxide. | 09-20-2012 |
20120269989 | LOW TEMPERATURE SILICON OXIDE CONVERSION - A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The polysilazane film is converted to silicon oxide by exposing the polysilazane film to humidity at low substrate temperature. The polysilazane film may also be dipped in a liquid having both oxygen and hydrogen, such as water, hydrogen peroxide and or ammonium hydroxide. These conversion techniques may be used separately or in a sequential combination. Conversion techniques described herein hasten conversion, produce manufacturing-worthy films and remove the requirement of a high temperature oxidation treatment. An ozone treatment may precede the conversion technique(s). | 10-25-2012 |
20130084711 | REMOTE PLASMA BURN-IN - Methods of treating the interior of a plasma region are described. The methods include a preventative maintenance procedure or the start-up of a new substrate processing chamber having a remote plasma system. A new interior surface is exposed within the remote plasma system. The (new) interior surfaces are then treated by sequential steps of (1) forming a remote plasma from hydrogen-containing precursor within the remote plasma system and then (2) exposing the interior surfaces to water vapor. Steps (1)-(2) are repeated at least ten times to complete the burn-in process. Following the treatment of the interior surfaces, a substrate may be transferred into a substrate processing chamber. A dielectric film may then be formed on the substrate by flowing one precursor through the remote plasma source and combining the plasma effluents with a second precursor flowing directly to the substrate processing region. | 04-04-2013 |
20130149462 | SURFACE TREATMENT AND DEPOSITION FOR REDUCED OUTGASSING - A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region. | 06-13-2013 |
20130288485 | DENSIFICATION FOR FLOWABLE FILMS - A method of forming a dielectric layer is described. The method first deposits an initially-flowable layer on a substrate. The initially-flowable layer is then densified by exposing the substrate to a high-density plasma (HDP). Essentially no additional material is deposited on the initially-flowable layer, in embodiments, but the impact of the accelerated ionic species serves to condense the layer and increase the etch tolerance of the processed layer. | 10-31-2013 |
20130309870 | METHODS OF REDUCING SUBSTRATE DISLOCATION DURING GAPFILL PROCESSING - Methods of reducing dislocation in a semiconductor substrate between asymmetrical trenches are described. The methods may include etching a plurality of trenches on a semiconductor substrate and may include two adjacent trenches of unequal width separated by an unetched portion of the substrate. The methods may include forming a layer of dielectric material on the substrate. The dielectric material may form a layer in the trenches located adjacent to each other of substantially equivalent height on both sides of the unetched portion of the substrate separating the two trenches. The methods may include densifying the layer of dielectric material so that the densified dielectric within the two trenches of unequal width exerts a substantially similar stress on the unetched portion of the substrate that separates them. | 11-21-2013 |
20140073144 | LOW COST FLOWABLE DIELECTRIC FILMS - A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N | 03-13-2014 |
20140213070 | LOW SHRINKAGE DIELECTRIC FILMS - Methods of forming a dielectric layer on a substrate are described, and may include introducing a first precursor into a remote plasma region fluidly coupled with a substrate processing region of a substrate processing chamber A plasma may be formed in the remote plasma region to produce plasma effluents. The plasma effluents may be directed into the substrate processing region. A silicon-containing precursor may be introduced into the substrate processing region, and the silicon-containing precursor may include at least one silicon-silicon bond. The plasma effluents and silicon-containing precursor may be reacted in the processing region to form a silicon-based dielectric layer that is initially flowable when formed on the substrate. | 07-31-2014 |
20140329027 | LOW TEMPERATURE FLOWABLE CURING FOR STRESS ACCOMMODATION - Methods of forming gapfill silicon-containing layers are described. The methods may include providing or forming a silicon-and-hydrogen-containing layer on a patterned substrate. The methods include non-thermally treating the silicon-and-hydrogen-containing layer at low substrate temperature to increase the concentration of Si—Si bonds while the silicon-and-hydrogen-containing layer remains soft. The flaccid layer is able to adjust to the departure of hydrogen from the film and retain a high density without developing a stress. Film qualify is further improved by then inserting O between Si—Si bonds to expand the film in the trenches thereby converting the silicon-and-hydrogen-containing layer to a silicon-and-oxygen-containing layer. | 11-06-2014 |
Patent application number | Description | Published |
20130093338 | DRIVING CIRCUITS FOR LIGHT EMITTING ELEMENTS - A circuit for driving light emitting elements, such as LEDs, includes a first transistor having a source coupled to ground through a first resistive element, and a second transistor having a gate electrically coupled to a gate of the first transistor, a source electrically coupled to ground, and a drain for electrical connection to a first group of light emitting elements. The circuit also includes circuitry to provide a predetermined voltage at the source of the first transistor, circuitry to compensate for a difference in respective gate-source voltages of the first and second transistors, and circuitry to compensate for a difference in respective drain-source voltages of the first and second transistors. In some implementations, the circuit can achieve relatively low power consumption. | 04-18-2013 |
20130093339 | DRIVING CIRCUITS FOR LIGHT EMITTING ELEMENTS - A circuit for driving light emitting elements, such as LEDs, includes .a first transistor having a source coupled to ground through a first resistive element, and a second transistor having a gate electrically coupled to a gate of the first transistor, a source electrically coupled to ground, and a drain for electrical connection to a first group of light emitting elements. The circuit also includes circuitry to provide a predetermined voltage at the source of the first transistor, circuitry to compensate for a difference in respective gate-source voltages of the first and second transistors, and circuitry to compensate for a difference in respective drain-source voltages of the first and second. transistors. In some implementations, the circuit can achieve relatively low power consumption. | 04-18-2013 |
20140160802 | FAULT PROTECTION AND CORRECTION OF LINE AND LOAD FAULTS - A fault protection and correction circuit for the control of a power converter is disclosed. An example circuit generates a waveform that drives a switch on or off and controls the power converter. The controller circuit in addition to power factor correction (PFC) circuitry includes a first and a second shut down mode modules, both of them cause the switching to stop. The circuit includes a module for receiving fault events. When a fault occurs, the controller enters the second shut down mode. The controller stays in the second shut down mode if the required current for this mode can be provided by the outside circuitry. Otherwise, the controller enters the first shut down mode that requires less current and subsequently restarts the controller. By modifying the outside circuitry the controller can respond differently to fault events. | 06-12-2014 |
Patent application number | Description | Published |
20130346513 | MIGRATING A CHAT MESSAGE SERVICE PROVIDED BY A CHAT SERVER TO A NEW CHAT SERVER - Migrating a chat messaging service provided for a chat user is disclosed. At a second chat server from a first chat server, static information associated with a chat user is received. The static information is received before the chat user is indicated as being associated with a migration state. At the second chat server from the first chat server, dynamic information associated with the chat user is received. At least a portion of the dynamic information is received after the chat user is indicated as being associated with the migration state. After the chat user is no longer indicated as being associated with the migration state, a chat message for the chat user is received at the second chat server. | 12-26-2013 |
20130346587 | METHODS AND SYSTEMS FOR ADAPTIVE CAPACITY MANAGEMENT - Techniques to adaptively manage service requests within a multi-server system. In one embodiment, a service request and a service rule associated with the service request are received. Data about operating parameters of at least one server in a multi-server system are also received as part of a feedback loop. A response to the service request based on the service rule and the operating parameters is determined. Execution of the service request may be modified according to a tiered service rule based on the at least one server reaching a capacity threshold. The modification includes omitting an action in execution of the service request. | 12-26-2013 |
20140068198 | STATISTICAL CACHE PROMOTION - Storing data in a cache is disclosed. It is determined that a data record is not stored in a cache. A random value is generated using a threshold value. It is determined whether to store the data record in the cache based at least in part on the generated random value. | 03-06-2014 |
20140164700 | SYSTEM AND METHOD OF DETECTING CACHE INCONSISTENCIES - A system and method of detecting cache inconsistencies among distributed data centers is described. Key-based sampling captures a complete history of a key for comparing cache values across data centers. In one phase of a cache inconsistency detection algorithm, a log of operations performed on a sampled key is compared in reverse chronological order for inconsistent cache values. In another phase, a log of operations performed on a candidate key having inconsistent cache values as identified in the previous phase is evaluated in near real time in forward chronological order for inconsistent cache values. In a confirmation phase, a real time comparison of actual cache values stored in the data centers is performed on the candidate keys identified by both the previous phases as having inconsistent cache values. An alert is issued that identifies the data centers in which the inconsistent cache values were reported. | 06-12-2014 |
20140280206 | SOCIAL CACHE - Various embodiments relating to a social cache replacement policy are described. The techniques of the present invention disclosed utilize social network properties to guide a cache replacement policy executed by a social networking platform system. In one embodiment, a method is provided for determining a queue location to cache a data item based on a popularity score computed from social network properties. In one embodiment, a method is provided for computing the popularity score by incorporating a user's social network properties and the user's friends' social network properties. In embodiments, the popularity score may be computed using a plurality of social network properties, which may include social network properties associated with (i) the user, (ii) the consumer(s), and/or (iii) the data item(s). In embodiments, a plurality of popularity scores are maintained in a user-score database, where the plurality of popularity scores are periodically updated using historical data. | 09-18-2014 |
20150081974 | STATISTICAL CACHE PROMOTION - Storing data in a cache is disclosed. It is determined that a data record is not stored in a cache. A random value is generated using a threshold value. It is determined whether to store the data record in the cache based at least in part on the generated random value. | 03-19-2015 |