Park, Icheon
Changkyun Park, Icheon KR
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20130215161 | LIQUID CRYSTAL DISPLAY AND LOCAL DIMMING CONTROL METHOD THEREOF - A liquid crystal display includes a liquid crystal display panel, a backlight unit including a plurality of light sources, the backlight unit providing light to a back surface of the liquid crystal display panel, a backlight driving circuit that individually drives a plurality of previously determined blocks each including the light sources based on a dimming value of each of the blocks, and a local dimming control circuit that calculates a pixel gain value compensating for a luminance reduction resulting from the dimming value of each block and corrects the pixel gain value based on a grayscale saturation level of each block. | 08-22-2013 |
Hae-Chan Park, Icheon KR
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20150039785 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - An electronic device includes a semiconductor memory. The semiconductor memory includes an odd-numbered layer structure disposed over a substrate and including a plurality of first lines which extend in a first direction; an even-numbered layer structure disposed over the substrate and including a plurality of second lines which extend in a second direction crossing the first direction; and resistance variable layers interposed between the first lines, between the second lines, and between the first lines and the second lines, wherein the odd-numbered layer structure and the even-numbered layer structure are alternately stacked over the substrate. | 02-05-2015 |
20150132944 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - An electronic device includes a semiconductor memory circuit. The semiconductor memory circuit includes a plurality of first conductive lines which includes an anti-oxidation layer on both sides of each first conductive line, an inter-layer dielectric layer suitable for gap-filling a space between the first conductive lines, a material layer formed over the first conductive lines and the inter-layer dielectric layer and including oxygen vacancies, and a plurality of second conductive lines formed over the material layer to intersect with the first conductive lines. A first portion of the material layer where the first conductive lines and the second conductive lines overlap each other has a lower oxygen content than a second portion of the material layer where the inter-layer dielectric layer and the second conductive lines overlap each other. | 05-14-2015 |
Jinchul Park, Icheon KR
Kang Tae Park, Icheon KR
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20110031626 | METAL WIRING OF SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF - The present invention relates to a metal wiring of a semiconductor device and a method for the same, and is directed to disclose a technique forming an additional conductive layer within the metal line, which acts as an etching barrier to increase the etching margin and to improve the RC characteristics between the metal lines, which can prevent the Cu migration. | 02-10-2011 |
Sung Hye Park, Icheon KR
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20150236154 | ANTI-FUSE AND METHOD FOR FORMING THE SAME - An anti-fuse includes a first gate structure disposed in a semiconductor substrate and a second gate structure that is spaced apart from the first gate structure by a distance and disposed in the semiconductor substrate. The first and second gate structures have different depths from each other in the semiconductor substrate. | 08-20-2015 |
Wan Choon Park, Icheon KR
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20150123278 | SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING THE SAME, MEMORY CARDS INCLUDING THE SAME AND ELECTRONIC SYSTEMS INCLUDING THE SAME - Semiconductor devices are provided. The semiconductor device includes a through electrode penetrating a substrate such that an end portion of the through electrode protrudes from a surface of the substrate, a passivation layer covering the surface of the substrate and defining a plug hole that exposes the end portion of the through electrode, and a barrier plug filling the plug hole. Related methods, related memory cards and related electronic systems are also provided. | 05-07-2015 |
20150279798 | SEMICONDUCTOR DEVICES HAVING THROUGH ELECTRODES, METHODS OF MANUFACTURING THE SAME, AND SEMICONDUCTOR PACKAGES INCLUDING THE SAME - A semiconductor device includes a semiconductor layer having a first surface and a second surface, a through electrode penetrating the semiconductor layer and having a protruding portion that protrudes over the second surface of the semiconductor layer, a front-side bump disposed on the first surface of the semiconductor layer and electrically coupled to the through electrode, a passivation pattern including a first insulation pattern that surrounds a sidewall of the protruding portion of the through electrode and extends onto the second surface of the semiconductor layer and a second insulation pattern that covers the first insulation pattern and has an etch selectivity with respect to the first insulation pattern, and a back-side bump covering an end surface of the protruding portion of the through electrode and extending onto the passivation pattern. | 10-01-2015 |