Patent application number | Description | Published |
20110031534 | PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER - There are provided a Si | 02-10-2011 |
20110039071 | METHOD OF MANUFACTURING A Si(1-v-w-x)CwAlxNv SUBSTRATE, METHOD OF MANUFACTURING AN EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv SUBSTRATE, AND EPITAXIAL WAFER - There are provided a method for manufacturing a Si | 02-17-2011 |
20110042788 | PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER | 02-24-2011 |
20110104438 | AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENT - A method of producing an Al | 05-05-2011 |
20110109973 | AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL LENS - A method of producing an Al | 05-12-2011 |
20110110840 | METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRIDE CRYSTAL - A method for producing a group III-nitride crystal having a large thickness and high quality and a group III-nitride crystal are provided. A method for producing a group III-nitride crystal | 05-12-2011 |
20130089457 | COMPOSITE MATERIAL, PART FOR CONTINUOUS CASTING, CONTINUOUS CASTING NOZZLE, CONTINUOUS CASTING METHOD, CAST MATERIAL, AND MAGNESIUM ALLOY CAST COIL MATERIAL - Provided is a composite material suitable for forming a part for continuous casting capable of producing cast materials of excellent surface quality for a long period of time and with which a molten metal is inhibited from flowing into a gap between a nozzle and a moving mold. | 04-11-2013 |
20130105858 | PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER | 05-02-2013 |
Patent application number | Description | Published |
20100143748 | Method for Growing Aluminum Nitride Crystal, Process for Producing Aluminum Nitride Crystal, and Aluminum Nitride Crystal - Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer. | 06-10-2010 |
20100209622 | Thin Film of Aluminum Nitride and Process for Producing the Thin Film of Aluminum Nitride - Flat, thin AlN membranes and methods of their manufacture are made available. | 08-19-2010 |
20110042684 | Method of Growing AlN Crystals, and AlN Laminate - Affords an AlN crystal growth method, and an AlN laminate, wherein AlN of favorable crystalline quality is grown. The AlN crystal growth method is provided with the following steps. To begin with, a source material ( | 02-24-2011 |
20110076453 | AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission Body - Affords an Al | 03-31-2011 |
20110171462 | Nitride Semiconductor Crystal Manufacturing Apparatus, Nitride Semiconductor Crystal Manufacturing Method, and Nitride Semiconductor Crystal - Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available. | 07-14-2011 |
20110265709 | Nitride Semiconductor Crystal Manufacturing Method, Nitride Semiconductor Crystal, and Nitride Semiconductor Crystal Manufacturing Apparatus - Nitride semiconductor crystal manufacturing method according to which the following steps are carried out. To begin with, a crucible ( | 11-03-2011 |
20120128997 | COIL MATERIAL AND METHOD FOR MANUFACTURING THE SAME - A coil material capable of contributing to an improvement of the productivity of a high-strength magnesium alloy sheet and a method for manufacturing the coil material are provided. Regarding the method for manufacturing a coil material through coiling of a sheet material formed from a metal into the shape of a cylinder, so as to produce the coil material, the sheet material is a cast material of a magnesium alloy discharged from a continuous casting machine and the thickness t (mm) thereof is 7 mm or less. The sheet material | 05-24-2012 |