Patent application number | Description | Published |
20110030149 | CONTROL METHOD OF A LAUNDRY MACHINE - A laundry machine and a control method thereof are provided in which laundering ability may be improved while also improving efficiency and noise/vibration. The laundry machine employs a plurality of drum motions by varying drum rotational speed, drum rotational direction, and drum starting and stopping point, to provide different motion of laundry items in the drum. | 02-10-2011 |
20110047716 | CONTROL METHOD OF A LAUNDRY MACHINE - A laundry machine and a control method thereof are provided in which laundering ability may be improved while also improving efficiency and noise/vibration. The laundry machine employs a plurality of drum motions by varying drum rotational speed, drum rotational direction, and drum starting and stopping point, to provide different motion of laundry items in the drum. | 03-03-2011 |
20110047717 | CONTROL METHOD OF A LAUNDRY MACHINE - A laundry machine and a control method thereof are provided in which laundering ability may be improved while also improving efficiency and noise/vibration. The laundry machine employs a plurality of drum motions by varying drum rotational speed, drum rotational direction, and drum starting and stopping point, to provide different motion of laundry items in the drum. | 03-03-2011 |
20110056249 | LAUNDRY MACHINE - A laundry machine and a control method thereof are provided in which laundering ability may be improved while also improving efficiency and noise/vibration. The laundry machine employs a plurality of drum motions by varying drum rotational speed, drum rotational direction, and drum starting and stopping point, to provide different motion of laundry items in the drum. | 03-10-2011 |
20120151689 | CONTROL METHOD OF LAUNDRY MACHINE - A control method of a laundry machine is disclosed. The control method of a laundry machine comprising a circulating step configured to circulate water inside the tub to re-supply the water to the tub, the circulating step implemented in a heating step. | 06-21-2012 |
20120180534 | CONTROL METHOD OF A LAUNDRY MACHINE - A laundry machine and a control method thereof are provided in which laundering ability may be improved while also improving efficiency and noise/vibration. The laundry machine employs a plurality of drum motions by varying drum rotational speed, drum rotational direction, and drum starting and stopping point, to provide different motion of laundry items in the drum. | 07-19-2012 |
Patent application number | Description | Published |
20090061590 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device capable of eliminating additional processes for forming an alignment key, thereby shortening the manufacturing process and lowering the manufacturing costs. The method includes forming an insulating layer including wiring regions and an alignment key region over a substrate; forming a first trench and a second trench on the wiring regions and alignment key region of the insulating layer, respectively; laminating a metal layer over the insulating layer including the first trench and second trench, the metal layer completely filling the first trench and partially filling in the second trench and having a height difference between the wiring region and alignment key region; forming a damascene metal wiring in the first trench and forming an alignment mark layer in the second trench by polishing the metal layer; and forming an MIM capacitor over the entire surface of the insulating layer including the metal wiring and alignment mark layer using the alignment mark layer as an alignment key. Since it is not necessary to perform a process for repeatedly forming the alignment key during manufacturing an MIM capacitor, a process for aligning the serial masks is not necessary. Therefore, the manufacturing process can be simplified and the manufacturing cost can be reduced. | 03-05-2009 |
20090061619 | METHOD OF FABRICATING METAL LINE - A method of fabricating a metal line of a semiconductor device that prevents formation of serrations in a metal line to thereby increase operational reliability of a semiconductor device. The method includes forming a lower metal line in a semiconductor substrate; and then forming a first nitride layer as an etching stop layer over the semiconductor substrate including the lower metal line; and then forming a first insulating layer over the first nitride layer; and then forming a second nitride layer over the first insulating layer; and then forming a contact hole partially exposing the uppermost surface of the lower metal line by performing a first etching process; and then simultaneously forming a second insulating layer over the second nitride layer and a void in the contact hole; and then forming a trench corresponding spatially to the contact hole and partially exposing the uppermost surface of the lower metal line by performing a second etching process. | 03-05-2009 |
20090127441 | Image Sensor and Method for Manufacturing Thereof - An image sensor according to an embodiment can comprise a metal line layer formed on a semiconductor substrate including a light receiving device; a first microlens formed on the metal line layer; a color filter array formed on the first microlens; and a second microlens formed on the color filter array. An oxide layer pattern can be disposed between the metal line layer and the first microlens. A blocking layer can be arranged in the oxide layer pattern in regions between adjacent first microlenses. | 05-21-2009 |
20100173442 | Image sensor and method for manufacturing the same - An image sensor and a method for manufacturing the same are provided. In the method, a photoresist is formed on a substrate including a photodiode region and a gate electrode opposite to the photodiode region on the basis of the gate electrode. An oxide layer is formed to a specific thickness on both the photodiode region and a part of the gate electrode. The photoresist is removed from the substrate and cleaned. A first oxide film is formed on the substrate, the gate electrode, and the oxide layer remaining on the photodiode region. A nitride film is formed on the first oxide film. And a second oxide film is formed on the nitride film. Blank etching is performed on the first oxide film, the nitride film, and the second oxide film to form a spacer at the side of the gate electrode. | 07-08-2010 |