Patent application number | Description | Published |
20090321501 | METHOD OF FABRICATING WIRE ON WIRE STITCH BONDING IN A SEMICONDUCTOR DEVICE - A low profile semiconductor package is disclosed including at least first and second stacked semiconductor die mounted to a substrate. The first semiconductor die may be electrically coupled to the substrate with a plurality of stitches in a forward ball bonding process. The second semiconductor die may in turn be electrically coupled to the first semiconductor die using a second set of stitches bonded between the die bond pads of the first and second semiconductor die. The second set of stitches may each include a lead end having a stitch ball that is bonded to the bond pads of the second semiconductor die. The tail end of each stitch in the second set of stitches may be wedge bonded directly to lead end of a stitch in the first set of stitches. | 12-31-2009 |
20090321952 | WIRE ON WIRE STITCH BONDING IN A SEMICONDUCTOR DEVICE - A low profile semiconductor package is disclosed including at least first and second stacked semiconductor die mounted to a substrate. The first semiconductor die may be electrically coupled to the substrate with a plurality of stitches in a forward ball bonding process. The second semiconductor die may in turn be electrically coupled to the first semiconductor die using a second set of stitches bonded between the die bond pads of the first and second semiconductor die. The second set of stitches may each include a lead end having a stitch ball that is bonded to the bond pads of the second semiconductor die. The tail end of each stitch in the second set of stitches may be wedge bonded directly to lead end of a stitch in the first set of stitches. | 12-31-2009 |
20100033054 | PATTERNED DIELECTRIC ELASTOMER ACTUATOR AND METHOD OF FABRICATING THE SAME - A patterned dielectric elastomer actuator is disclosed which includes a series of thin parallel elastomer filaments, separated by certain distances sandwiched between a pair of rigid electrodes. The elastomer filaments and air acts as a patterned dielectric layer. The elastomer filaments can compress laterally from a circular cross-section to an elliptical shape when a voltage is applied between the rigid electrodes. The elastomer filaments can touch laterally, which implies no further squeezing in order to provide a minimal secure distance between the rigid electrodes. The dielectric elastomer actuator can be fabricated utilizing a reel-to-reel fabrication process with the thin elastomer filaments fabricated ahead of time, by extrusion techniques and cured completely before storing on reels. | 02-11-2010 |
20100316601 | BICYCLO-SUBSTITUTED PYRAZOLON AZO DERIVATIVES, PREPARATION PROCESS AND PHARMACEUTICAL USE THEREOF - The bicyclo-substituted pyrazolon-azo derivatives of formula (I) or pharmaceutical acceptable salts, hydrates or solvates thereof, methods for their preparation, pharmaceutical compositions containing the same and their use as a therapeutic agent, especially as thrombopoietin (TPO) mimetics and their use as agonists of thrombopoietin receptor are disclosed. The definition of substituents in formula (I) are the same as defined in the description. | 12-16-2010 |
20110084377 | SYSTEM FOR SEPARATING A DICED SEMICONDUCTOR DIE FROM A DIE ATTACH TAPE - A system is disclosed for ejecting a semiconductor die from a tape to which the die is affixed during the wafer dicing process. In embodiments, the system includes an ejector tool including a support table, ejector pins and a pick-up arm. The support table is connected to a vacuum source for creating a negative pressure at an interface between the tape and support table. The support table further includes an aperture with one or more chamfered sidewalls. The vacuum source is connected to the aperture so that, upon placement of the tape on the support table with a die centered over the aperture, the vacuum source pulls a portion of the tape around the edges of the semiconductor die away from the die and into the space created by the chamfered edges. | 04-14-2011 |
20110105921 | MONITORING AN INTERVAL WITHIN THE CARDIAC CYCLE - Aspects of this disclosure describe measuring intervals within a cardiac cycle to, for example, determine whether a patient is a candidate for cardiac therapy initiation or modification. The intervals may be measured in response to a trigger identifying a physiological event. The intervals and an identification of the physiological event may be stored. A physician or clinician may determine whether the patient is a candidate for cardiac therapy modification based on the measured intervals. | 05-05-2011 |
20110142725 | AIR PURIFICATION APPARATUS AND METHOD OF FORMING THE SAME - A photocatalytic air purification apparatus and method of fabricating the same. The apparatus may be configured to include a light source surrounded by one or more porous plate substrates. An inner and outer surface of each plate substrate may be coated with a photocatalyst material. The light source may be placed in a direction parallel to the direction of an air flow and in optical proximity to the plate substrates in order to activate the photocatalyst coating. The photocatalyst coating associated with the plate substrates may be activated by absorbing light with a wavelength shorter than a cut-off activation wavelength from the light source in order to capture and decompose organic components and airborne pollutants in the air by the activated photocatalyst. | 06-16-2011 |
20110142944 | ANDROGRAPHIS EXTRACT FORMULATIONS - A pharmaceutical formulation containing 50-90% by weight a powdered extract of Andrographis paniculata and 5-50% by weight a powdered blocking agent. The formulation may further contain a pore-forming agent, a filler, a lubricant, or a glidant. Also described are a method for preparing this pharmaceutical formulation and a method for treating inflammatory disease, immunological disease, or respiratory disease with it. | 06-16-2011 |
20110218109 | CLATHRATE COMPOUNDS - A clathrate compound of formula (I): M | 09-08-2011 |
20110301491 | METHOD AND APPARATUS FOR DETECTING CHANGE IN INTRATHORACIC ELECTRICAL IMPEDANCE - A method and apparatus for detection of changes in impedance a patient that includes generating measured impedances, generating an adaptive baseline trend of the measured impedances corresponding to a first time period, generating a short term trend of the measured impedances corresponding to a second time period less than the first time period, determining changes in relative position of the short term trend and the baseline trend, the determined changes in relative position corresponding to determining intersecting of the baseline trend by the short term trend, determining differences between the baseline trend and calculated period average impedances, and accumulating, in response to determining no intersecting of the baseline trend by the short term trend, the determined differences between the baseline trend and the calculated period average impedances. | 12-08-2011 |
20120123175 | PROCESSES FOR INCREASING THE YIELD OF ETHYLENE AND PROPYLENE - A process for increasing the yield of ethylene and propylene, comprising: | 05-17-2012 |
20120145332 | SYSTEM FOR SEPARATING A DICED SEMICONDUCTOR DIE FROM A DIE ATTACH TAPE - A system is disclosed for ejecting a semiconductor die from a tape to which the die is affixed during the wafer dicing process. In embodiments, the system includes an ejector tool including a support table, ejector pins and a pick-up arm. The support table is connected to a vacuum source for creating a negative pressure at an interface between the tape and support table. The support table further includes an aperture with one or more chamfered sidewalls. The vacuum source is connected to the aperture so that, upon placement of the tape on the support table with a die centered over the aperture, the vacuum source pulls a portion of the tape around the edges of the semiconductor die away from the die and into the space created by the chamfered edges. | 06-14-2012 |
20120216396 | NON-UNIFORM VACUUM PROFILE DIE ATTACH TIP - A system is disclosed for separating a semiconductor die from a tape to which the die is affixed during the wafer dicing process. The system includes a pick-up arm for positioning a vacuum tip over a semiconductor die to be removed. The vacuum tip includes a non-uniform array of vacuum holes to grip the semiconductor wafer. | 08-30-2012 |
20130034470 | LED ACTIVATED PHOTOCATALYST AIR FILTER - The present disclosure provides devices and methods for making a light emitting diode (LED) activated photocatalyst air filter. One or more embodiments include a filter material that includes a photocatalyst, and a frame that includes an array of a number of LEDs positioned on the frame to project a wavelength of light directed toward the filter material, wherein the array of LEDs is positioned a distance from the filter material. | 02-07-2013 |
20130123507 | BICYCLO-SUBSTITUTED PYRAZOLON AZO DERIVATIVES, PREPARATION PROCESS AND PHARMACEUTICAL USE THEREOF - The bicyclo-substituted pyrazolon-azo derivatives of formula (I) or pharmaceutical acceptable salts, hydrates or solvates thereof, methods for their preparation, pharmaceutical compositions containing the same and their use as a therapeutic agent, especially as thrombopoietin (TPO) mimetics and their use as agonists of thrombopoietin receptor are disclosed. The definition of substituents in formula (I) are the same as defined in the description. | 05-16-2013 |
20130237792 | Method and Apparatus for Detecting Change in Intrathoracic Electrical Impedance - A method and apparatus for detection of changes in impedance a patient that includes generating measured impedances, generating an adaptive baseline trend of the measured impedances corresponding to a first time period, generating a short term trend of the measured impedances corresponding to a second time period less than the first time period, determining changes in relative position of the short term trend and the baseline trend, the determined changes in relative position corresponding to determining intersecting of the baseline trend by the short term trend, determining differences between the baseline trend and calculated period average impedances, and accumulating, in response to determining no intersecting of the baseline trend by the short term trend, the determined differences between the baseline trend and the calculated period average impedances. | 09-12-2013 |
20140001376 | END OF SERVICE LIFE INDICATOR FOR ORGANIC VAPOR RESPIRATOR FILTER CARTRIDGE | 01-02-2014 |
20150090575 | SAFETY MECHANISM FOR MEDICAL TREATMENT DEVICE AND ASSOCIATED METHODS - A safety mechanism for medical treatment devices includes a switch actuator that depresses a power activation switch after movement in a first direction followed movement in a second direction. The safety mechanism thus prevents accidental or unintentional delivery of power to a heating segment of the medical treatment device. | 04-02-2015 |
20150094704 | Medical Treatment Devices Having Adjustable Length and/or Diameter - The present embodiments enable the length and/or diameter of the heating segment of a medical treatment device to be adjusted on the fly during a treatment procedure, without a need to interrupt the procedure, thus allowing a single catheter to be used at different locations in a hollow anatomical structure. | 04-02-2015 |
20150094705 | MEDICAL TREATMENT DEVICES HAVING ADJUSTABLE LENGTH AND/OR DIAMETER - The present embodiments enable the length and/or diameter of the heating segment of a medical treatment device to be adjusted on the fly during a treatment procedure, without a need to interrupt the procedure, thus allowing a single catheter to be used at different locations in a hollow anatomical structure. | 04-02-2015 |
20150094706 | MEDICAL TREATMENT DEVICES HAVING ADJUSTABLE LENGTH AND/OR DIAMETER - The present embodiments enable the length and/or diameter of the heating segment of a medical treatment device to be adjusted on the fly during a treatment procedure, without a need to interrupt the procedure, thus allowing a single catheter to be used at different locations in a hollow anatomical structure. | 04-02-2015 |
20150094707 | CABLE MANAGEMENT SYSTEM FOR MEDICAL TREATMENT DEVICE - An enclosure of a power source for medical treatment devices includes a handle portion extending from a first surface of the enclosure. The handle portion includes a standoff extending away from the first surface, and a flange extending transversely from the standoff and defining a plane that is generally parallel to the first surface. Together, the first surface, the standoff, and the flange define an open annular space. A power cable may be wound about the standoff to at least partially occupy the open annular space. One or more notches in the flange are configured to seat the power cable to secure its loose end(s). In this manner, the power cable can be safely stored to reduce the risks that the power cable may become damaged, may interfere with other devices in the treatment area, or may be misplaced. | 04-02-2015 |
20150155247 | BRIDGE STRUCTURE FOR EMBEDDING SEMICONDUCTOR DIE - A semiconductor device, and a method of its manufacture, are disclosed. The semiconductor device includes a semiconductor die, such as a controller die, mounted on a surface of a substrate. A bridge structure is also mounted to the substrate, with the semiconductor die fitting within a trench formed in a bottom surface of the bridge structure. The bridge structure may be formed from a semiconductor wafer into either a dummy bridge structure functioning as a mechanical spacer layer, or an IC bridge structure functioning as both a mechanical spacer layer and an integrated circuit semiconductor die. Memory die may also be mounted atop the bridge structure. | 06-04-2015 |
20150187421 | SPACER LAYER FOR EMBEDDING SEMICONDUCTOR DIE - A semiconductor device, and a method of its manufacture, are disclosed. The semiconductor device includes a semiconductor die, such as a controller die, mounted on a surface of a substrate. A spacer layer is also mounted to the substrate, with the semiconductor die fitting within an aperture or a notch formed through first and second major opposed surfaces of the spacer layer. Additional semiconductor die, such as flash memory die, may be mounted atop the spacer layer. | 07-02-2015 |
20150221624 | SEMICONDUCTOR DEVICE INCLUDING INDEPENDENT FILM LAYER FOR EMBEDDING AND/OR SPACING SEMICONDUCTOR DIE - A semiconductor package including a plurality of stacked semiconductor die, and methods of forming the semiconductor package, are disclosed. In order to ease wirebonding requirements on the controller die, the controller die may be mounted directly to the substrate in a flip chip arrangement requiring no wire bonds or footprint outside of the controller die. Thereafter, a spacer layer may be affixed to the substrate around the controller die to provide a level surface on which to mount one or more flash memory die. The spacer layer may be provided in a variety of different configurations. | 08-06-2015 |
20150337416 | HIGH-FORMABILITY AND SUPER-STRENGTH COLD-ROLLED STEEL SHEET AND MANUFACTURING METHOD THEREOF - A high-formability and super-strength cold-rolled steel sheet and a manufacturing method thereof. The weight percentage of its components is: C 0.15-0.25%, Si 1.00-2.00%, Mn 1.50-3.00%, P≦0.015%, S≦0.012%, Al 0.03-0.06%, N≦0.008%, and the rest are Fe and inevitable impurities. The manufacturing method comprises the following steps: 1) smelting and casting; 2) heating to 117˜1230° C. and performing thermal insulation; 3) performing hot rolling, the finish rolling temperature being 880+30° C., and coiling at 550˜650° C.; and 4) performing acid washing, cold rolling, and annealing, the cold rolling reduction being 40-60%, annealing at 860-920° C., and performing slow cooling to 690-750° C. with the cooling rate of 3˜10° C./s; performing rapid cooling at 240˜320° C., with the cooling speed ≧50° C./s, then heating to 360˜460° C., and performing thermal insulation for 100˜500 s to cool to the room temperature at last. Finally, a high-formability, low-rebound property and super-strength cold-rolled steel sheet with the yield strength of 600˜900 MPa, the tensile strength of 980˜1150 MPa, the elongation of 17˜25% is obtained. | 11-26-2015 |
20160033735 | Device For Fixing Wires - A device is provided and includes a first catch plate and a retention ring. The first catch plate includes a plurality of first catch plate gripping slots spaced apart from each other and disposed about a circumference thereof. Each of the plurality of first catch plate griping slots include a wire receiving opening extending through a thickness of the first catch plate. The retention ring is removably secured to a periphery of the first catch plate. | 02-04-2016 |
Patent application number | Description | Published |
20080261403 | METHOD FOR OBTAINING HIGH-QUALITY BOUNDARY FOR SEMICONDUCTOR DEVICES FABRICATED ON A PARTITIONED SUBSTRATE - One embodiment of the present invention provides a process for obtaining high-quality boundaries for individual multilayer structures which are fabricated on a trench-partitioned substrate. During operation, the process receives a trench-partitioned substrate wherein the substrate surface is partitioned into arrays of isolated deposition platforms which are separated by arrays of trenches. The process then forms a multilayer structure, which comprises a first doped layer, an active layer, and a second doped layer, on one of the deposition platforms. Next, the process removes sidewalls of the multilayer structure. | 10-23-2008 |
20080265265 | InGaAlN LIGHT-EMITTING DEVICE CONTAINING CARBON-BASED SUBSTRATE AND METHOD FOR MAKING THE SAME - One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity. | 10-30-2008 |
20080315212 | METHOD FOR FABRICATING A P-TYPE SEMICONDUCTOR STRUCTURE - One embodiment of the present invention provides a method for fabricating a group III-V p-type nitride structure. The method comprises growing a first layer of p-type group III-V material with a first acceptor density in a first growing environment. The method further comprises growing a second layer of p-type group III-V material, which is thicker than the first layer and which has a second acceptor density, on top of the first layer in a second growing environment. In addition, the method comprises growing a third layer of p-type group III-V material, which is thinner than the second layer and which has a third acceptor density, on top of the second layer in a third growing environment. | 12-25-2008 |
20100176404 | METHOD FOR FABRICATING HIGH-POWER LIGHT-EMITTING DIODE ARRAYS - One embodiment of the present invention provides a method for fabricating a high-power light-emitting diode (LED). The method includes etching grooves on a growth substrate, thereby forming mesas on the growth substrate. The method further includes fabricating indium gallium aluminum nitride (InGaAlN)-based LED multilayer structures on the mesas on the growth substrate, wherein a respective mesa supports a separate LED structure. In addition, the method includes bonding the multilayer structures to a conductive substrate. The method also includes removing the growth substrate. Furthermore, the method includes depositing a passivation layer and an electrode layer above the InGaAlN multilayer structures, wherein the passivation layer covers the sidewalls and bottom of the grooves. Moreover, the method includes creating conductive paths which couple a predetermined number of adjacent individual LEDs, thereby allowing the LEDs to share a common power supply and be powered simultaneously to form a high-power LED array. | 07-15-2010 |
20110049540 | METHOD FOR FABRICATING ROBUST LIGHT-EMITTING DIODES - One embodiment of the present invention provides a method for fabricating light-emitting diodes (LEDs). The method includes fabricating an InGaAlN-based multilayer LED structure on a conductive substrate. The method further includes etching grooves of a predetermined pattern through the active region of the multilayer LED structure. The grooves separate a light-emitting region from non-light-emitting regions. In addition, the method includes depositing electrode material on the light-emitting and non-light-emitting regions, thereby creating an electrode. Furthermore, the method includes depositing a passivation layer covering the light-emitting and non-light-emitting regions. Moreover, the method includes removing the passivation layer on the electrode to allow the non-light-emitting regions which are covered with the electrode material and the passivation layer to be higher than the light-emitting region and the electrode, thereby protecting the light-emitting region from contact with test equipment. | 03-03-2011 |
20110281422 | METHOD FOR OBTAINING HIGH-QUALITY BOUNDARY FOR SEMICONDUCTOR DEVICES FABRICATED ON A PARTITIONED SUBSTRATE - One embodiment of the present invention provides a process for obtaining high-quality boundaries for individual multilayer structures which are fabricated on a trench-partitioned substrate. During operation, the process receives a trench-partitioned substrate wherein the substrate surface is partitioned into arrays of isolated deposition platforms which are separated by arrays of trenches. The process then forms a multilayer structure, which comprises a first doped layer, an active layer, and a second doped layer, on one of the deposition platforms. Next, the process removes sidewalls of the multilayer structure. | 11-17-2011 |
20120295422 | METHOD FOR FABRICATING InGaN-BASED MULTI-QUANTUM WELL LAYERS - A method for fabricating quantum wells by using indium gallium nitride (InGaN) semiconductor material includes fabricating a potential well on a layered group III-V nitride structure at a first predetermined temperature in a reactor chamber by injecting into the reactor chamber an In precursor gas and a Ga precursor gas. The method further includes, subsequent to the fabrication of the potential well, terminating the Ga precursor gas, maintaining a flow of the In precursor gas, and increasing the temperature in the reactor chamber to a second predetermined temperature while adjusting the In precursor gas flow rate from a first to a second flow rate. In addition, the method includes annealing and stabilizing the potential well at the second predetermined temperature while maintaining the second flow rate. The method also includes fabricating a potential barrier above the potential well at the second predetermined temperature while resuming the Ga precursor gas. | 11-22-2012 |
Patent application number | Description | Published |
20100207096 | METHOD FOR FABRICATING HIGHLY REFLECTIVE OHMIC CONTACT IN LIGHT-EMITTING DEVICES - One embodiment of the present invention provides a method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer. | 08-19-2010 |
20100219394 | METHOD FOR FABRICATING A LOW-RESISTIVITY OHMIC CONTACT TO A P-TYPE III-V NITRIDE SEMICONDUCTOR MATERIAL AT LOW TEMPERATURE - One embodiment of the present invention provides a method for fabricating a group III-V nitride structure with an ohmic-contact layer. The method involves fabricating a group III-V nitride structure with a p-type layer. The method further involves depositing an ohmic-contact layer on the p-type layer without first annealing the p-type layer. The method also involves subsequently annealing the p-type layer and the ohmic-contact layer in an annealing chamber at a predetermined temperature for a predetermined period of time, thereby reducing the resistivity of the p-type layer and the ohmic contact in a single annealing process. | 09-02-2010 |
20110001120 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION - A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and the horizontal surface of the second doped layer. | 01-06-2011 |
20110006319 | GALLIUM NITRIDE LIGHT-EMITTING DEVICE WITH ULTRA-HIGH REVERSE BREAKDOWN VOLTAGE - One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an active layer; and a p-type GaN-based semiconductor layer (p-type layer). The n-type layer is epitaxially grown by using ammonia gas (NH | 01-13-2011 |
20110031472 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A HIGHLY REFLECTIVE OHMIC-ELECTRODE - A semiconductor light-emitting device includes a multilayer semiconductor structure on a conductive substrate. The multilayer semiconductor structure includes a first doped semiconductor layer situated above the conductive substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and/or an MQW active layer situated between the first and second doped semiconductor layers. The device also includes a reflective ohmic-contact metal layer between the first doped semiconductor layer and the conductive substrate, which includes Ag, and at least one of: Ni, Ru, Rh, Pd, Au, Os, Ir, and Pt; plus at least one of: Zn, Mg Be, and Cd; and a number of: W, Cu, Fe, Ti, Ta, and Cr. The device further includes a bonding layer between the reflective ohmic-contact metal layer and the conductive substrate, a first electrode coupled to the conductive substrate, and a second electrode coupled to the second doped semiconductor layer. | 02-10-2011 |
20110147705 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH SILICONE PROTECTIVE LAYER - One embodiment of the present invention provides a semiconductor light-emitting device which includes: a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, a multi-quantum-well (MQW) active layer situated between the first and the second doped semiconductor layers. The device further includes a first electrode coupled to the first doped semiconductor layer, a second electrode coupled to the second doped semiconductor layer, and a silicone protective layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode. | 06-23-2011 |
Patent application number | Description | Published |
20110027278 | REGULATORY T CELL MEDIATOR PROTEINS AND USES THEREOF - The present invention relates to novel regulatory T cell proteins. One protein, designated PD-L3, resembles members of the PD-L1 family, and co-stimulates αCD3 proliferation of T cells in vitro. A second, TNF-like, protein has also been identified as being upregulated upon αCD3/αGITR stimulation. This protein has been designated T | 02-03-2011 |
20120301484 | REGULATORY T CELL MEDIATOR PROTEINS AND USES THEREOF - The present invention relates to novel regulatory T cell proteins. One protein, designated PD-L3, resembles members of the PD-L1 family, and co-stimulates αCD3 proliferation of T cells in vitro. A second, TNF-like, protein has also been identified as being upregulated upon αCD3/αGITR stimulation. This protein has been designated T | 11-29-2012 |
20140037634 | REGULATORY T CELL MEDIATOR PROTEINS AND USES THEREOF - The present invention relates to novel regulatory T cell proteins. One protein, designated PD-L3, resembles members of the PD-L1 family, and co-stimulates αCD3 proliferation of T cells in vitro. A second, TNF-like, protein has also been identified as being upregulated upon αCD3/αGITR stimulation. This protein has been designated T | 02-06-2014 |
20150231215 | VISTA Antagonist and Methods of Use - The present invention is directed to a peptide, multimer, conjugate, analog, derivative or mimetic thereof that inhibits the activity of VISTA. The invention further contemplates therapeutic use of the VISTA antagonist peptide, multimer, conjugate, derivative or mimetic thereof, including treating or preventing cancer, bacterial infections, viral infections, parasitic infections and fungal infections, as well as research uses of the antagonist. | 08-20-2015 |
20160083472 | VISTA Antagonist and Methods of Use - The present invention is directed to synergic or additive therapies comprising the administration of a VISTA antagonist and a PD-1, PD-L1 or POD-L3 antagonist; or the combination of a VISTA agonist and a -1, PD-L1 or POD-L3 agonist which combinations respectively elicit an additive or synergistic effect at promoting T cell immunity or inhibiting T cell immunity, i.e., CD4, CD8 or Th1 immunity. The agonists and antagonists may be in the same or separate compositions and may be administered together or separately administered in either order. | 03-24-2016 |
Patent application number | Description | Published |
20090046541 | ELECTRONIC DEVICE WITH AN ALARM CLOCK FUNCTION AND METHOD OF CONTROLLING THE FUNCTION - An electronic device with an alarm clock function includes a storage unit storing a plurality of questions, corresponding answers, a preset number and a count number; a managing unit for performing or disabling an alarm clock function; a random selection module for generating and outputting a random question; a comparison module for receiving inputs and determining whether the input matches the corresponding answer; a recording module for adding 1 to the count number when the input matches the corresponding answer; and a number confirming module for comparing the count number with the preset number, disabling the alarm clock function when the count number is equal to the preset number, and informing the random selection module to re-generate a random question when the count number is not equal to the preset number. A method of disabling alarm clock function is also provided. | 02-19-2009 |
20090064016 | DISPLAYING DEVICE WITH USER-DEFINED DISPLAY REGIONS AND METHOD THEREOF - A displaying device includes an input unit, a region defining unit, a content allocating unit, an obtaining unit, a display controlling unit and a display unit. The region defining unit defines regions by incorporating one or more unit regions in each of the regions according to users' selections and generates region defining information. The content allocating unit allocates contents for the regions according to the users' selections and generates content allocating information. The obtaining unit obtains the region defining information, the content allocating information, and contents according to the content allocating information, and then transmits the information and contents to the display controlling unit. The display controlling unit splits a display area of the display unit into the regions defined by the region defining unit and displays the contents in the regions correspondingly according to the content allocating information. Related methods are also provided. | 03-05-2009 |
20090064034 | IMAGE DISPLAYING DEVICE AND METHOD FOR DISPLAYING IMAGES AND RELATED INFORMATION - An image displaying device for displaying images and related information is provided. The image displaying device includes a display unit, a storage and a central controller. The storage stores at least an image file and at least a related information file associated with the image files. The central controller includes a display controller which is configured for dividing the display unit into a first region and a second region and displaying an image defined by the image file in the first region and related information recorded by the related information file in the second region. A related method is also provided. | 03-05-2009 |
20090086585 | ELECTRONIC DEVICE WITH AN ALARM CLOCK FUNCTION AND METHOD OF CONTROLLING THE FUNCTION - An electronic device with an alarm clock function includes a storage unit storing an alarm time, audio files and related information; an audio playing module for randomly playing an audio file via an audio output unit which matches the alarm time; an option generating module for generating and outputting preset number options, at least one of them containing the related information of the playing audio file; a comparison module for receiving inputs and determining whether the input matches the related information of the playing audio file; a managing unit for disabling the alarm clock function when the input matches the related information. A method of controlling the alarm clock function is also provided. | 04-02-2009 |
20140045271 | Potentiometric Titration Method for Measuring Concentration of Acid Mixture of Aluminum Etchant - The present invention provides a potentiometric titration method for measuring concentration of acid mixture of aluminum etchant, which prepares identified potassium hydroxide-ethanol solution or sodium hydroxide-ethanol solution as a titrant and uses a monohydric alcohol and a diol as an anhydrous medium for the acid mixture of aluminum etchant to carry out titration of the acid mixture of aluminum etchant so as to realize measurement of concentration of each acid contained in the acid mixture of aluminum etchant through a one-stage process of potentiometric titration thereby reducing the complication of operation of inspection and uncertainty of inspection result and achieving the purposes of carrying out inspections with high precision and high performance. The method can efficiently and accurately measure the concentrations of nitric acid, phosphoric acid, and acetic acid contained in the acid mixture of aluminum etchant. | 02-13-2014 |
20140326279 | CLEANING EQUIPMENT OF SAMPLE BOTTLE FOR CHRIMATOGRAPHY ANALYSIS AND CLEANING METHOD THEREOF - A cleaning equipment of sample bottle for chromatography analysis comprising: a base; a support frame vertically fixed to the base; a horizontal column having two ends, wherein one of the ends is disposed at the support frame through an adjustment knob; a rotary drive device fixed to the other end of the horizontal columns; a rotation disk which can rotate through driving of the rotary drive device, and a side edge of the rotation disk provides with multiple placing holes for receiving and fixing sample bottles; a cleaning agent recycling tank disposed below the rotation disk, wherein a side wall of it provides with an ejector pipe connected with a water pump; and a control unit for controlling on/off and rotation speed of the rotary drive device, and on/off of the water pump. The invention also provides a cleaning method of sample bottle for chromatography analysis. | 11-06-2014 |
20150327323 | DISCONTINUOUS RECEPTION (DRX) MODE PROCESSING METHOD, USER EQUIPMENT, AND BASE STATION - A discontinuous reception mode (DRX) processing method, a user equipment, and a base station are provided. The method comprises: a user equipment (UE), in a DRX mode, detecting whether an event requiring to keep or enter an active time occurs; when the event is detected, the UE sending indication information of exiting the DRX mode and keeping or entering the active time to a base station; and the UE exiting the DRX mode and keeping or entering the active time, and receiving data sent by the base station. The foregoing technical solution avoids the problems of a service delay or handover interruption in the DRX mode. | 11-12-2015 |
Patent application number | Description | Published |
20080210951 | Method For Fabricating High-Quality Semiconductor Light-Emitting Devices On Silicon Substrates - One embodiment of the present invention provides a semiconductor light-emitting device which includes: (1) a silicon (Si) substrate; (2) a silver (Ag) transition layer which is formed on a surface of the Si substrate, wherein the Ag transition layer covers the Si substrate surface; and (3) an InGaAlN, ZnMgCdO, or ZnBeCdO-based semiconductor light-emitting structure which is fabricated on the Ag-coated Si substrate. Note that the Ag transition layer prevents the Si substrate surface from forming an amorphous overcoat with reactant gases used for growing the semiconductor light-emitting structure. | 09-04-2008 |
20080224154 | Semiconductor Light-Emitting Device With Metal Support Substrate - One embodiment of the present invention provides a semiconductor light-emitting device which includes a multi-layer structure. The multilayer structure comprises a first doped layer, an active layer, and a second doped layer. The semiconductor light-emitting device further includes a first Ohmic-contact layer configured to form a conductive path to the first doped layer, a second Ohmic-contact layer configured to form a conductive path to the second doped layer, and a support substrate comprising not less than 15% chromium (Cr) measured in weight percentage. | 09-18-2008 |
20080230792 | Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface - One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers. | 09-25-2008 |
20080230799 | Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface - One embodiment of the present invention provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a substrate, a p-type doped InGaAIN layer, an n-type doped InGaAIN layer, and an active layer situated between the p-type doped and n-type doped InGaAIN layers. The semiconductor light-emitting device further includes an n-side Ohmic-contact layer coupled to an N-polar surface of the n-type doped InGaAIN layer. The Ohmic-contact layer comprises at least one of Au, Ni, and Pt, and at least one of group IV elements. | 09-25-2008 |
20080248633 | Method for Manufacturing Indium Gallium Aluminium Nitride Thin Film on Silicon Substrate - The method for manufacturing the indium gallium aluminium nitride (InGaAlN) thin film on silicon substrate, which comprises the following steps: introducing magnesium metal for processing online region mask film, that is, or forming one magnesium mask film layer or metal transition layer; then forming one metal transition layer or magnesium mask layer, finally forming one layer of indium gallium aluminium nitride semiconductor layer; or firstly forming one layer of metal transition layer on silicon substrate and then forming the first indium gallium aluminium nitride semiconductor layer, magnesium mask layer and second indium gallium aluminium nitride semiconductor layer in this order. This invention can reduce the dislocation density of indium gallium aluminium nitride materials and improve crystal quality. | 10-09-2008 |
20090026473 | InGaAlN LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - There is provided an InGaAlN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively. | 01-29-2009 |
20090050927 | METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A SILICON SUBSTRATE - There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate. | 02-26-2009 |
Patent application number | Description | Published |
20080303751 | IMAGE DISPLAYING APPARATUS AND METHOD FOR DISPLAYING IMAGES AND ADDITIONAL INFORMATION - An image displaying apparatus for displaying images and additional information is provided. The image displaying apparatus includes a display unit; an image data obtaining unit for obtaining image data of an image from a storage; an additional information obtaining unit for obtaining additional information; a display controller for displaying the image and additional information on the display unit in two display modes. In a first display mode, the additional information is semi-transparent or outlined as it overlaps the image, and in a second display mode, the additional information is highlighted and overlaps the image. The image displaying apparatus further includes a mode switching unit for signaling the display controller to switch between the first display mode and the second display mode. A related method is also provided. | 12-11-2008 |
20080306629 | ROBOT APPARATUS AND OUTPUT CONTROL METHOD THEREOF - The present invention relates to a robot apparatus and an output control method adapted for the robot apparatus. The method includes steps of: receiving radio frequency (RF) signals of identification (ID) codes from several wireless communication devices within a predetermined area and time period; sensing people and obtaining the number of people within the predetermined area and time period; comparing current ID codes and the number of people in the predetermined area with what were determined previously, generating an update signal when the comparison is not equal; replacing the previous data with the current data; acquiring output data based on the associated output found in the output table; and performing an output based on the output data. | 12-11-2008 |
20080306901 | FILE PROCESSING DEVICE AND METHOD - A file processing device and a method are provided. The method includes: providing a storage unit for storing a connection date when an exterior storage device is connected to a file processing device; retrieving a last connection date of the exterior storage device; selecting the exterior storage device for files or file folders whose date information is later than the last connection date; and copying and saving the selected files or file folder to the file processing device. | 12-11-2008 |
20080306940 | IMAGE DISPLAY DEVICE AND METHOD - An image display device is provided. The device includes a display screen, a storage unit, and a processing unit. The storage unit stores images and selection interface information. The selection interface information includes a plurality of catalogues each of which collects one or more images. The processing unit includes a selection interface display module, a selection control module, and an image search module. The selection interface display module controls the display screen to display a selection interface that provides the catalogues for selection according to the selection interface information. The selection control module generates a selection signal in response to a selection operation on the selection interface. The selection signal indicates which catalogue on the selection interface is selected. The image search module searches the storage unit for the images according to the selection signal. An image display method is also provided. | 12-11-2008 |
20120092136 | Radio frequency identification system and tag counting ending method for anti-collision thereof - The present invention provides a radio frequency identification (RFID) system and a tag counting ending method for anti-collision thereof. The RFID system comprises a reader-writer and tags. The tag counting ending method comprises: in the counting process, when the reader-writer does not receive a response signal from a tag and the value of a register is not greater than a pre-determined counting ending register threshold value, the reader-writer transmits a Finish command to each of the tags and waits for responses; after receiving the Finish command, the tag determines whether the tag itself is counted successfully, if so, makes no response; if not, sets the counter of tag itself as 0 and transmits a response signal to the reader-writer; if the reader-writer receives the response signal, then determines that counting is not finished and continues to count the tag which makes response; if the reader-writer does not receive the response signal, then determines that counting is finished. | 04-19-2012 |
20120219124 | METHOD AND APPARATUS FOR MONITORING POWER CONSUMPTION VALUE OF DSL SUBSCRIBER BOARD - A method and an apparatus for monitoring a power consumption value of a DSL subscriber board in real time are provided. The method includes: monitoring a working state of each subscriber port on the DSL subscriber board, the number of subscriber ports in each working state, and an output power of each LD subunit in an LD unit on the DSL subscriber board; and calculating a power consumption value of the DSL subscriber board in real time according to a monitoring result and preset electrical parameters of each functional unit. | 08-30-2012 |
20120294438 | METHOD AND APPARATUS FOR IMPROVING POWER OUTPUT EFFICIENCY OF LINE DRIVER - A method and an apparatus for improving power output efficiency of a line driver are disclosed. The method includes: obtaining a current working parameter of an xDSL subscriber board, where the current working parameter includes at least one of a working mode configured on a subscriber port of the xDSL subscriber board and current output power of the subscriber port; and determining, according to the current working parameter, a control signal for a line driver in the xDSL subscriber board and outputting the control signal. | 11-22-2012 |
20140016552 | METHOD AND APPARATUS FOR COLLECTING CHARGING INFORMATION OF A DATA SERVICE - The present invention discloses a charging method for collecting charging information of data service and an apparatus thereof. The method comprises: receiving service data from a gateway service node; determining a protocol type of the received service data according to an IP port number of the service data; classifying the received service data according to the protocol type of the service data; distributing the classified service data to a plurality of protocol processing modules; at each of the plurality of protocol processing modules, extracting charging information of the classified service data, wherein the charging information comprises the protocol type of the service data; sending the charging information to a charging system for charging by a charging mode; and transmitting the respective classified service data transparently to a packet switched domain network. This invention can accurately collect the charging information of service data of various classes. | 01-16-2014 |
20140071921 | METHODS AND DEVICES FOR TRANSMITTING DATA - The present disclosure provides a method and device for transmitting data. The method comprises: a first user equipment receives downlink data sent from a base station through downlink resources of a special subframe; the first user equipment acquires a position of uplink resources corresponding to the first user equipment in guard period resources of the special subframe, wherein the position of the uplink resources corresponding to the first user equipment in the guard period resources of the special subframe is staggered from a position of downlink resources corresponding to a second user equipment in the special subframe, and a round-trip time of the second user equipment is greater than a round-trip time of the first user equipment; and the first user equipment sends uplink data to the base station through the uplink resources corresponding to the first user equipment in the guard period resources of the special subframe. | 03-13-2014 |
20140092880 | METHODS AND DEVICES FOR TRANSMITTING DATA - Embodiments of the present disclosure provide a method and a device for transmitting data. The method includes: a user equipment receives downlink data sent from a base station through downlink resources of a special subframe; the user equipment determines its corresponding guard period level, the guard period level corresponds to a round-trip time of the user equipment and indicates a length of an orthogonal frequency division multiplexing (OFDM) symbol in a guard period corresponding to the user equipment in the special subframe; the user equipment determines, according to its corresponding guard period level, a position of uplink resources corresponding to the user equipment in guard period resources of the special subframe; and the user equipment sends uplink data to the base station through the uplink resources corresponding to the user equipment in the guard period resources of the special subframe. | 04-03-2014 |
20140269593 | RESOURCE SCHEDULING METHOD AND APPARATUS - Embodiments of the present invention provide a resource scheduling method and apparatus and a terminal. The method includes: pre-dividing a resource block RB into a plurality of sub-RBs; and scheduling a UE by using a resource scheduling indication during data transmission to perform data receiving or sending in a position of a corresponding sub-RB. The resource block RB is pre-divided into a plurality of sub-RBs by applying the present invention; and during data transmission, the UE is scheduled by using the resource scheduling indication to perform data receiving or sending in the position of the corresponding sub-RB, thereby improving resource utilization efficiency during transmission of a small data service and improving transmission efficiency of small data. | 09-18-2014 |
20140292778 | GRAPHIC PROCESSING METHOD, SYSTEM AND SERVER - The present disclosure discloses a graphic processing method, a system and a server, the graphic processing method includes: analyzing a graphic processing template to generate a graphic configuration link when receiving the graphic processing template by a server; receiving at least one graphic information to be processed and processing the at least one graphic information to generate a graphic file by the server according to the graphic configuration link; and sending, by the server, the graphic file to a client device for displaying. The present disclosure can enhance the efficiency of the graphic processing and make the results of the graphic processing more unification and standardization, and reduce the costs of the graphic processing and improve intelligence of the graphic processing. | 10-02-2014 |
20150071233 | METHOD AND DEVICE FOR ALLOCATING WLAN CHANNEL RESOURCES AND WIRELESS LOCAL AREA NETWORK COMMUNICATION SYSTEM - The present invention provides a method and device for allocating WLAN channel resources and a wireless local area network communication system. The method includes: obtaining subcarrier allocation information, where the subcarrier allocation information is used to identify a subcarrier or a subcarrier group used to bear data, where channel quality of a subchannel where the subcarrier or the subcarrier group is located is greater than or equal to a judgment threshold; and sending data on the subcarrier according to the subcarrier allocation information. The present invention reduces a waste of transmit power of a station, and can increase a modulation order because no restriction is imposed by pull-down of a subchannel with very poor channel quality. | 03-12-2015 |
20150087306 | METHOD AND APPARATUS FOR ACCELERATING CAMP AND REGISTRATION PROCESS DURING TERMINAL STARTUP - Provided are a method and apparatus for accelerating a camp and registration process during terminal startup. In the method, during startup, an operation of selecting network camp and an operation of initializing a card are simultaneously performed; and according to network information obtained after initializing the card, it is determined to continue camping and registering, or to reselect a network on which to camp and then register, or to directly perform registration on the network on which the terminal has already camped. The disclosure can accelerate a camp and registration process during terminal startup, and reduce the time needed from startup to normal service operation, so that a terminal can support an emergency call or a regular service as soon as possible, thereby increasing the satisfaction of a user when using the terminal | 03-26-2015 |
20150229441 | METHOD AND DEVICE FOR INTERLEAVING PROCESSING IN A WLAN SYSTEM - The present invention provides a method and a device for interleaving processing in a WLAN system, and relates to the field of communications technologies. The method includes: obtaining, by a WLAN device, a predetermined number of identifiers of valid positions from any sub-interleaving processing contained in an interleaving processing; determining valid input positions of the interleaving processing according to the identifiers of the valid positions; transmitting data bits to be transmitted in the valid input positions, and transmitting bit 0 and/or bit 1 or no data bit in other non-valid input positions of the interleaving processing other than the valid input positions; modulating data bits transmitted in interleaving processing output positions to obtain modulation signals and mapping the modulation signals onto the corresponding data sub-carriers respectively. The present invention can be applied in interleaving processing of data bits to be transmitted. | 08-13-2015 |
20150276584 | COLORIMETER MEASUREMENT METHOD AND COLORIMETER FOR IMPLEMENTING THE METHOD - The present application relates to a colorimeter measurement method and a colorimeter for implementing the method. The method includes the following steps: placing a measured sample on a sample platform; shooting a current image of the sample; determining an intersection angle θ between the sample and a moving direction of the sample platform; adjusting a position of a scanning light spot of a colorimeter according to the angle θ, so that the sample coincides with the moving direction of the sample platform; using the colorimeter to scan the measured sample. By implementing the colorimeter measurement method and the colorimeter of the present application, the sample can be placed optionally when it is measured. Specially, when a design value of a measured sample is approximately equal to a size of the measuring light spot, much time can be saved and manpower waste is avoided. | 10-01-2015 |
20150358951 | METHODS AND DEVICES FOR TRANSMITTING DATA - The present disclosure provides a system for transmitting data. The system comprises: a base station and a first user equipment, the first user equipment receives downlink data sent from a base station through downlink resources of a special subframe; acquires a position of uplink resources corresponding to the first user equipment in guard period resources of the special subframe, wherein the position of the uplink resources corresponding to the first user equipment in the guard period resources of the special subframe is staggered from a position of downlink resources corresponding to a second user equipment in the special subframe, and a round-trip time of the second user equipment is greater than a round-trip time of the first user equipment; and sends uplink data to the base station through the uplink resources corresponding to the first user equipment in the guard period resources of the special subframe. | 12-10-2015 |
20150373697 | METHOD AND DEVICE FOR TRANSMITTING DATA - Embodiments of the present disclosure provide a method and a device for transmitting data. The method includes: a user equipment receives downlink data sent from a base station through downlink resources of a special subframe; the user equipment determines its corresponding guard period level, the guard period level corresponds to a round-trip time of the user equipment and indicates a length of an orthogonal frequency division multiplexing (OFDM) symbol in a guard period corresponding to the user equipment in the special subframe; the user equipment determines, according to its corresponding guard period level, a position of uplink resources corresponding to the user equipment in guard period resources of the special subframe; and the user equipment sends uplink data to the base station through the uplink resources corresponding to the user equipment in the guard period resources of the special subframe. | 12-24-2015 |
Patent application number | Description | Published |
20110133158 | METHOD FOR FABRICATING INGAN-BASED MULTI-QUANTUM WELL LAYERS - A method for fabricating quantum wells by using indium gallium nitride (InGaN) semiconductor material includes fabricating a potential well on a layered group III-V nitride structure at a first predetermined temperature in a reactor chamber by injecting into the reactor chamber an In precursor gas and a Ga precursor gas. The method further includes, subsequent to the fabrication of the potential well, terminating the Ga precursor gas, maintaining a flow of the In precursor gas, and increasing the temperature in the reactor chamber to a second predetermined temperature while adjusting the In precursor gas flow rate from a first to a second flow rate. In addition, the method includes annealing and stabilizing the potential well at the second predetermined temperature while maintaining the second flow rate. The method also includes fabricating a potential barrier above the potential well at the second predetermined temperature while resuming the Ga precursor gas. | 06-09-2011 |
20110133159 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION IN P-TYPE LAYER - A semiconductor light-emitting device includes a substrate, a first doped semiconductor layer, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped semiconductor layer, wherein part of the first doped semiconductor layer is passivated, and wherein the passivated portion of the first doped semiconductor layer substantially insulates the first electrode from the edges of the first doped semiconductor layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped semiconductor layer and a passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode. | 06-09-2011 |
20110140080 | METHOD FOR FABRICATING InGaAIN LIGHT-EMITTING DIODES WITH A METAL SUBSTRATE - One embodiment of the present invention provides a method for fabricating light-emitting diodes. The method includes etching grooves on a growth substrate, thereby creating mesas on the growth substrate. The method further includes fabricating on each of the mesas an indium gallium aluminum nitride (InGaAlN) multilayer structure which contains a p-type layer, a multi-quantum-well layer, and an n-type layer. In addition, the method includes depositing one or more metal substrate layers on top of the InGaAlN multilayer structure. Moreover, the method includes removing the growth substrate. Furthermore, the method includes creating electrodes on both sides of the InGaAlN multilayer structure, thereby resulting in a vertical-electrode configuration. | 06-16-2011 |
20110140081 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION - A method for fabricating a semiconductor light-emitting device includes fabricating a multilayer semiconductor structure on a first substrate, wherein the multilayer semiconductor structure comprises a first doped semiconductor layer, an MQW active layer, a second doped semiconductor layer, and a first passivation layer. The method further involves patterning and etching part of the first passivation layer to expose the first doped semiconductor layer. A first electrode is then formed, which is coupled to the first doped semiconductor layer. Next, the multilayer structure is bonded to a second substrate; and the first substrate is removed. A second electrode is formed, which is coupled to the second doped semiconductor layer. Further, a second passivation layer is formed, which substantially covers the sidewalls of multilayer structure and part of the surface of the second doped semiconductor layer which is not covered by the second electrode. | 06-16-2011 |
20110143467 | METHOD FOR FABRICATING INGAAIN LIGHT EMITTING DEVICE ON A COMBINED SUBSTRATE - One embodiment of the present invention provides a method for fabricating an InGaAlN light-emitting semiconductor structure. During the fabrication process, at least one single-crystal sacrificial layer is deposited on the surface of a base substrate to form a combined substrate, wherein the single-crystal sacrificial layer is lattice-matched with InGaAlN, and wherein the single crystal layer forms a sacrificial layer. Next, the InGaAlN light-emitting semiconductor structure is fabricated on the combined substrate. The InGaAlN structure fabricated on the combined substrate is then transferred to a support substrate, thereby facilitating a vertical electrode configuration. Transferring the InGaAlN structure involves etching the single-crystal sacrificial layer with a chemical etchant. Furthermore, the InGaAlN and the base substrate are resistant to the chemical etchant. The base substrate can be reused after the InGaAlN structure is transferred. | 06-16-2011 |
20110147704 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION LAYER - A light-emitting device and method for the fabrication thereof. The device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) situated between the first and the second doped semiconductor layer. The device also includes a first electrode coupled to the first doped semiconductor layer and a second electrode coupled to the second doped semiconductor layer. The device further includes a first passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and the part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode. The first passivation layer is formed through an oxidation technique. The device further includes a second passivation layer overlaying the first passivation layer. | 06-23-2011 |
20110253972 | LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILM - A method for fabricating a semiconductor light-emitting device based on a strain adjustable multilayer semiconductor film is disclosed. The method includes epitaxially growing a multilayer semiconductor film on a growth substrate, wherein the multilayer semiconductor film comprises a first doped semiconductor layer, a second doped semiconductor layer, and a multi-quantum-wells (MQW) active layer; forming an ohmic-contact metal layer on the first doped semiconductor layer; depositing a metal substrate on top of the ohmic-contact metal layer, wherein the density and/or material composition of the metal substrate is adjustable along the vertical direction, thereby causing the strain in the multilayer semiconductor film to be adjustable; etching off the growth substrate; and forming an ohmic-electrode coupled to the second doped semiconductor layer. | 10-20-2011 |
20110298005 | METHOD FOR FABRICATING AN N-TYPE SEMICONDUCTOR MATERIAL USING SILANE AS A PRECURSOR - A method for fabricating a group III-V n-type nitride structure comprises fabricating a growth Si substrate and then depositing a group III-V n-type layer above the Si substrate using silane gas (SiH | 12-08-2011 |
20120037883 | SEMICONDUCTOR LIGHT-EMITTING DEVICES FOR GENERATING ARBITRARY COLOR - A light-emitting device includes a conductive substrate ( | 02-16-2012 |