Patent application number | Description | Published |
20110006277 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer and being capable of reversibly changing between a first state having a first resistance and a second state having a second resistance higher than the first resistance by a current supplied via the first layer and the second layer. The recording layer includes a first compound layer and an insulating layer. The first compound layer contains a first compound. The first compound includes a first cation element and a second cation element of a type different from the first cation element. The insulating layer contains a third compound, and the third compound includes an element selected from group 1 to 4 elements and group 12 to 17 elements in the periodic table. | 01-13-2011 |
20110026294 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first and second layers and is capable of reversibly transitioning between a first state and a second state with a resistance higher than in the first state. One of the first and second layers includes a resistivity distribution layer perpendicular to a stacking direction of the first and second layers, and the recording layer. The resistivity distribution layer includes a low and a high resistivity portion. Resistivity of the high resistivity portion is higher than resistivity of the low resistivity portion. The low resistivity portion contains a transition element identical to a transition element contained in the high resistivity portion. | 02-03-2011 |
20110031459 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer and being capable of reversibly changing between a first state having a first resistance and a second state having a second resistance higher than the first resistance. The recording layer includes a first compound layer and a second compound layer. The first compound layer contains a first compound. The first compound includes a first cation element and a second cation element of a type different from the first cation element. The second compound layer contains a second compound. The second compound includes a transition element having a d-orbital partially filled with electron, and the second compound includes a void site capable of storing at least one of the first cation element and the second cation element. | 02-10-2011 |
20110068319 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a stacked body. The stacked body includes a first layer, a second layer and a recording layer provided between the first layer and the second layer. The recording layer includes a phase-change material and a crystal nucleus. The phase-change material is capable of reversely changing between a crystal state and an amorphous state by a current supplied via the first layer and the second layer. The crystal nucleus is provided in contact with the phase-change material and includes a crystal nucleus material having a crystal structure identical to a crystal structure of the crystal state of the phase-change material, and a crystal nucleus coating provided on a surface of the crystal nucleus material and having a composition different from a composition of the crystal nucleus material. | 03-24-2011 |
20110069525 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile memory device includes a memory cell. The memory cell is connected to a first interconnection and a second interconnection and includes a plurality of layers. The plurality of layers includes a memory layer and a carbon nanotube-containing layer which is in contact with the memory layer and contains a plurality of carbon nanotubes. | 03-24-2011 |
20110205781 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a non-volatile semiconductor memory device includes: a first line; a second line intersecting with the first line; and a memory cell arranged at a position where the second line intersects with the first line, wherein, the memory cell includes: a variable resistance element; and a negative resistance element connected in series to the variable resistance element. | 08-25-2011 |
20110216576 | INFORMATION RECORDING/REPRODUCING DEVICE - According to one embodiment, an information recording/reproducing device includes a recording layer and a driver section. The recording layer has a first layer including a first compound. The first compound includes a mixed crystal of a first oxide containing a first metallic element and a second oxide. The second oxide has a crystal structure being same as the first oxide and contains a second metallic element different from the first metallic element. The driver section is configured to produce state change in the recording layer to record information by at least one of application of voltage to the recording layer and passage of current to the recording layer. Composition ratio of an element having a smaller ionic radius of the first and second metallic elements is not less than percolation threshold of a lattice formed of ions of the first and second metallic elements based on the crystal structure. | 09-08-2011 |
20110216582 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a recording layer and a driving unit. The recording layer includes a first layer containing a first compound. The first compound includes a first positive ion element. The first positive ion element is made of a transition metal element and serves as a first positive ion. The second positive ion element serves as a second positive ion. The driving unit is configured to generate a phase change in the recording layer and to record information by at least one of application of a voltage and application of a current to the recording layer. The coordination number of the first positive ion element at a position of a second coordination of the second positive ion element is 80% or more and less than 100% of the coordination number when the first compound is assumed to be a perfect crystal. | 09-08-2011 |
20110303888 | NONVOLATILE MEMORY DEVICE - According to one embodiment, a nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The memory cell includes a plurality of layers. The plurality of layers includes a carbon-containing memory layer sandwiched between a first electrode film and a second electrode film and a carbon-containing barrier layer provided at least one of between the first electrode film and the memory layer and between the second electrode film and the memory layer. The barrier layer has lower electrical resistivity than the memory layer. | 12-15-2011 |
20120273743 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes: a first interconnect; a second interconnect at a position opposing the first interconnect; and a variable resistance layer between the first interconnect and the second interconnect, the variable resistance layer being capable of reversibly changing between a first state and a second state by a voltage applied via the first interconnect and the second interconnect or a current supplied via the first interconnect and the second interconnect, the first state having a first resistivity, the second state having a second resistivity higher than the first resistivity. Wherein the variable resistance layer has a compound of carbon and silicon as a main component and including hydrogen. | 11-01-2012 |
Patent application number | Description | Published |
20080225681 | OPTICAL RECORDING MEDIUM - According to an aspect of the present invention, there is provided an optical recording medium including a first substrate, a first adjusting layer, an organic recording layer, a second adjusting layer and a second substrate, sequentially stacked in the mentioned order. The first and second substrates have a refractive index of n | 09-18-2008 |
20090141615 | OPTICAL RECORDING MEDIUM - According to one embodiment, an optical recording medium according to one embodiment of the invention is an optical recording medium to be processed using a light beam having a wavelength λ and a lens having a numerical aperture NA, which includes one of a track and a pit array, and in which a width TP of the track or pit satisfies a condition 0.480≦TP×NA/λ<1.026. | 06-04-2009 |
20090196142 | INFORMATION RECORDING MEDIUM, INFORMATION RECORDING METHOD, AND INFORMATION RECORDING AND REPRODUCING APPARATUS - According to one embodiment, in an information recording medium for which a phase change material is used and in which information is recorded on, reproduced from, and erased from a recording layer by light irradiation, a recrystallization width WR at a periphery of an amorphous recording mark formed on the recording layer by light irradiation, and a recording mark width WA and a track pitch TP satisfy 1.008-06-2009 | |
20100181546 | NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory using carbon related films as variable resistance films includes bottom electrodes formed above a substrate, buffer layers formed on the bottom electrodes and each formed of a film containing nitrogen and containing carbon as a main component, variable resistance films formed on the buffer layers and each formed of a film containing carbon as a main component and the electrical resistivity thereof being changed according to application of voltage or supply of current, and top electrodes formed on the variable resistance films. | 07-22-2010 |
20100237319 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - This nonvolatile semiconductor memory device comprises a memory cell array including memory cells arranged therein. Each of the memory cells is located at respective intersections between first wirings and second wirings and includes a variable resistance element. The variable resistance element comprises a thin film including carbon (C). The thin film includes a side surface along a direction of a current flowing in the memory cell. The side surface includes carbon nitride (CN | 09-23-2010 |
20100327253 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a variable resistance layer includes a mixture of a first compound and a second compound. The first compound includes carbon (C) as well as at least one element selected from a group of elements G | 12-30-2010 |
20110062407 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a recording layer which includes a typical element and a transition element, and stores a state of a first electric resistivity and a state of a second electric resistivity different from the first electric resistivity by a movement of the typical element, and an electrode layer which is disposed at one end of the recording layer to apply a voltage or a current to the recording layer. The recording layer includes a first region which is in contact with the electrode layer and the electrode layer includes a second region which is in contact with the recording layer. The first and second regions are opposite to each other. And the first and second regions include the typical element, and a concentration of the typical element in the first region is higher than that in the second region. | 03-17-2011 |
20120061732 | INFORMATION RECORDING/REPRODUCING DEVICE - According to one embodiment, an information recording/reproducing device including a semiconductor substrate, a first interconnect layer on the semiconductor substrate, a first memory cell array layer on the first interconnect layer, and a second interconnect layer on the first memory cell array layer. The first memory cell array layer comprises an insulating layer having an alignment mark, and a stacked layer structure on the insulating layer and including a storage layer and an electrode layer. All of the layers in the stacked layer structure comprises a material with a permeability of visible light of 1% or more. | 03-15-2012 |
20130248965 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, there is provided a nonvolatile semiconductor memory device including a substrate, a laminated film which has a configuration where first insulating layers and first electrode layers are alternately laminated in a first direction vertical to the substrate, a second insulating layer formed on an inner wall of a first through hole pierced in the first insulating layers and the first electrode layers along the first direction, an intermediate layer formed on a surface of the second insulating layer, a third insulating layer formed on a surface of the intermediate layer, and a pillar-like first semiconductor region which is formed on a surface of the third insulating layer and extends along the first direction. | 09-26-2013 |
20130250670 | MAGNETORESISTIVE ELEMENT AND WRITING METHOD OF MAGNETIC MEMORY - According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, a non-magnetic layer formed between the first magnetic layer and the second magnetic layer, a charge storage layer having a first surface and a second surface different from the first surface, the first surface facing the second magnetic layer, a first insulating layer formed between the second magnetic layer and the first surface of the charge storage layer, and a second insulating layer formed on the second surface of the charge storage layer. | 09-26-2013 |
20140063924 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD OF THE SAME - According to one embodiment, a nonvolatile semiconductor memory device comprises a semiconductor substrate, and a memory cell which is arranged on the semiconductor substrate and comprises a variable resistance element. The variable resistance element comprises a laminated structure including a phase-change element which has at least two different crystalline resistance states by varying a crystalline state, and a magnetoresistive element which has at least two different magnetization resistance states by varying a magnetization state, and applies or does not apply a magnetic field to the phase-change element in accordance with the magnetization state. | 03-06-2014 |
20140241050 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell which stores data with two or more levels. The memory cell includes a structure includes a first electrode layer, a first semiconductor layer, a phase change film, an electrical insulating layer, a second semiconductor layer, and a second electrode layer arranged in order thereof, and the first semiconductor layer and the second semiconductor layer have carrier polarities different from each other. | 08-28-2014 |
20140254276 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device comprises memory cells each which stores data with two or more levels. Each of the memory cells includes a semiconductor layer, a first insulating layer on the semiconductor layer, a charge storage layer on the first insulating layer, a second insulating layer on the charge storage layer, and a control gate electrode on the second insulating layer, and the second insulating layer includes a ferroelectric layer. | 09-11-2014 |