Patent application number | Description | Published |
20090269646 | ELECTROLYTE MEMBRANE, PRODUCTION METHOD THEREOF, AND FUEL CELL - An electrolyte membrane with high durability is provided. The electrolyte membrane includes a porous film containing a nitrogen-containing heterocyclic ring or a cyano group, and a proton conductive component existing in pores of the porous film, wherein the proton conductive component includes a polymer compound containing at least a nitrogen-containing heterocyclic ring, a cyano group, and an acidic group in one molecule. | 10-29-2009 |
20100028751 | FUEL CARTRIDGE AND FUEL CELL - A fuel cell including a fuel cartridge with a fuel storage portion and a fuel feed opening and a fuel cell body with an output terminal and a power generation portion. The fuel cell comprises a wiring portion for electrically connecting the output terminal and power generation portion of the fuel cell body with each other when the fuel cartridge is mounted to the fuel cell body to place a fuel in a state in which the fuel is feedable from the fuel cartridge to the fuel cell body and for electrically disconnecting the output terminal and power generation portion of the fuel cell body when the fuel cartridge is removed from the fuel cell body. | 02-04-2010 |
20110065949 | COMPOUND FOR SOLID POLYMER ELECTROLYTE MEMBRANE - An unsaturated compound including a urethane bond in a main chain and a sulfonic acid group, a phosphoric acid group, an alkylsulfonic acid group, or an alkylphosphoric acid group on a benzene ring in a side chain is provided. In addition, a solid polymer electrolyte membrane containing a compound prepared by polymerizing the above-mentioned compound and an electrolyte membrane-electrode assembly including diffusion layers adhered on both surfaces of the electrolyte membrane are provided. Furthermore, a solid polymer fuel cell using the electrolyte membrane-electrode assembly is provided. | 03-17-2011 |
20110274878 | PRECURSOR SOL OF ALUMINUM OXIDE, OPTICAL MEMBER, AND METHOD FOR PRODUCING OPTICAL MEMBER - A precursor sol of aluminum oxide contains a polycondensate formed by the hydrolysis of an aluminum alkoxide or an aluminum salt, a solvent, and an organic aluminum compound having a specific structure. An optical member is produced by a process including a step of immersing an aluminum oxide film in a hot water with a temperature of 60° C. to 100° C. to form a textured structure made of aluminum oxide crystals, the aluminum oxide film being formed by feeding the precursor sol of aluminum oxide onto a base. A method for producing an optical member includes a step of immersing an aluminum oxide film in a hot water with a temperature of 60° C. to 100° C. to form a textured structure made of aluminum oxide crystals, the aluminum oxide film being formed by feeding the precursor sol of aluminum oxide onto a base. | 11-10-2011 |
20130258480 | PRECURSOR SOL OF ALUMINUM OXIDE AND METHOD FOR MANUFACTURING THE SAME, METHOD FOR MANUFACTURING OPTICAL MEMBER, OPTICAL MEMBER, AND OPTICAL SYSTEM - A precursor sol of aluminum oxide includes particles containing a hydrolysate and/or a condensate of an aluminum compound, a solvent, and an organo aluminum compound. When a pulsed-NMR T | 10-03-2013 |
20140044919 | OPTICAL MEMBER AND METHOD FOR MANUFACTURING OPTICAL MEMBER - An optical member includes a base material and an antireflective layer on the base material wherein the antireflective layer includes a plurality of fine protrusions on a surface thereof and a support layer for supporting the protrusions, and the support layer contains boron in an amount of 7×10 | 02-13-2014 |
20140044921 | PRECURSOR SOL OF ALUMINUM OXIDE, OPTICAL MEMBER, AND METHOD FOR PRODUCING OPTICAL MEMBER - A precursor sol of aluminum oxide contains a polycondensate formed by the hydrolysis of an aluminum alkoxide or an aluminum salt, a solvent, and an organic aluminum compound having a specific structure. An optical member is produced by a process including a step of immersing an aluminum oxide film in a hot water with a temperature of 60° C. to 100° C. to form a textured structure made of aluminum oxide crystals, the aluminum oxide film being formed by feeding the precursor sol of aluminum oxide onto a base. A method for producing an optical member includes a step of immersing an aluminum oxide film in a hot water with a temperature of 60° C. to 100° C. to form a textured structure made of aluminum oxide crystals, the aluminum oxide film being formed by feeding the precursor sol of aluminum oxide onto a base. | 02-13-2014 |
Patent application number | Description | Published |
20080243978 | RANDOM NUMBER GENERATOR - A random number generator includes an amplifier to amplify a difference between a noise signal and a reference signal to generate an amplified signal, a plurality of binarization circuits configured to binarize the amplified signal by using different inherent threshold values to obtain a plurality of binarized signals, and an exclusive OR circuit to perform an exclusive OR operation on the a plurality of binarized signals to generate random number sequence. | 10-02-2008 |
20080298117 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A semiconductor integrated circuit device, has a first variable resistor element and a second variable resistor element whose resistances are changed complementarily depending on a current; and a current path switching circuit that supplies said current from a power supply by switching between current paths according to whether a normal operation mode or a read mode is input externally, wherein said power supply is turned off and then turned on again in said normal operation mode, and in this state, data corresponding to the relationship between the magnitudes of the resistances of said first variable resistor element and said second variable resistor element is read in said read mode. | 12-04-2008 |
20090108896 | Semiconductor Integrated Circuit Apparatus - It is made possible to provide a flip-flop circuit capable of implementing the error correction function with a small area increase as far as possible and a pipeline system using such a flip-flop circuit. A flip-flop circuit includes: a flip-flop configured to operate based on a rising edge or a falling edge of a first clock signal; a decision circuit configured to compare an input of the flip-flop with an output thereof and output a request signal when the input of the flip-flop is different from the output thereof; and a control circuit configured to receive a second clock signal from outside and generate the first clock signal and a confirmation signal. When the request signal is sent from the decision circuit after the flip-flop has been activated, the control circuit inverts the first clock signal, sends the confirmation to the decision circuit, and makes the decision circuit cancel the request signal. | 04-30-2009 |
20090217222 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes: a plurality of processor elements each including a test circuit which tests whether there is a failure in the processor element and outputs a result of the test; a plurality of switch boxes provided so as to be respectively associated with processor elements, each of the switch boxes configured to have a table to store information of another processor element and transmit information of a corresponding processor element to the other processor element based on information stored in the table; a plurality of identification circuits provided so as to be respectively associated with processor elements, each of the identification circuits configured to identify a defective processor element on the basis of the result of the test and output location information of the defective processor element; and a transmission circuit configured to transmit the location information of the defective processor element output from the identification circuit to the switch boxes. | 08-27-2009 |
20100073991 | STORAGE APPARATUS - According to one embodiment, a storage apparatus includes: a first inverter; a second inverter; a first storage element having a first state and a second state; and a second storage element having a third state and a fourth state, wherein the first storage element is brought into the first state when a current flows from the first storage element to the first storage element and is brought into the second state when the current flows from the first storage element to the first storage element, wherein the second storage element is brought into the fourth state when a current flows from the second storage element to the second storage element and is brought into the third state when the current flows from the second storage element to the second storage element. | 03-25-2010 |
20100080054 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND ITS READING METHOD - A reading method includes: selecting the memory cell; performing a read operation on the selected memory cell to supply the read voltage, amplifying a first voltage read out from the selected memory element, outputting a second voltage obtained by amplifying the first voltage, and storing the second voltage as a first read state; performing a write operation on the selected memory cell to supply one of the first and second write voltages, regarding a third voltage appearing on the second line during the write operation as a second read state, comparing the first read state with the second read state, and deciding a state stored in the memory element before the read operation, as a read logic state on the basis of a result of the comparison; and writing the decided read logic state into the memory element if a logic state written in the write operation is different from the decided read logic state. | 04-01-2010 |
20110216573 | SEMICONDUCTOR INTEGRATED CIRCUIT - According to one embodiment, a semiconductor integrated circuit includes first and second inverters, a first transistor which has a gate connected to a word line, a source connected to a first bit line, and a drain connected to an input terminal of the second inverter, a second transistor which has a gate connected to the word line, a source connected to a second bit line, and a drain connected to an input terminal of the first inverter, a first variable resistive element which has a first terminal connected to the drain of the first transistor, and a second terminal connected to an output terminal of the first inverter, and a second variable resistive element which has a first terminal connected to the drain of the second transistor, and a second terminal connected to an output terminal of the second inverter. | 09-08-2011 |
20110309881 | THREE-DIMENSIONAL SEMICONDUCTOR INTEGRATED CIRCUIT - According to one embodiment, a three-dimensional semiconductor integrated circuit includes first, second and third chips which are stacked, and a common conductor which connects the first, second and third chips from one another. The first chip includes a first multi-leveling circuit, the second chip includes a second multi-leveling circuit, and the third chip includes a decoding circuit. The first multi-leveling circuit includes a first inverter to which binary first data is input and which outputs one of first and second potentials and a first capacitor which is connected between an output terminal of the first inverter and the common conductor. The second multi-leveling circuit includes a second inverter to which binary second data is input and which outputs one of third and fourth potentials and a second capacitor which is connected between an output terminal of the second inverter and the common conductor. | 12-22-2011 |
20120074467 | SWITCH ARRAY - According to one embodiment, a switch array includes first and second switches provided in a switch unit. The first switch includes first and second memory cell transistors and a first pass transistor. A second switch includes third and fourth memory cell transistors and a second pass transistor. The first and second memory cell transistor is provided in a first active region. The first pass transistor is provided in a second active region in the substrate. The third and fourth memory cell transistor is provided in the first active region. The second pass transistor is provided in the second active region adjacent to the first pass transistor in the channel length direction. The first and second active regions are adjacent to each other in a channel width direction. | 03-29-2012 |
20120142145 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - According to one embodiment, a semiconductor device manufacturing method includes producing a first substrate with an electrode, producing a second substrate with a through hole, stacking the second substrate on the first substrate, with an insulating layer intervening between the first substrate and the second substrate, making a hole reaching the electrode in the insulating layer under the through hole by etching the insulating layer with the second substrate as a mask, and filling the through hole and the hole with conductive substance. | 06-07-2012 |
20120235705 | NONVOLATILE CONFIGURATION MEMORY - According to one embodiment, a memory includes a first P-channel FET having a gate connected to a second output node, a source applied to a first potential, and a drain connected to the first output node, a second P-channel FET having a gate connected to a first output node, a source applied to the first potential, and a drain connected to the second output node, a first N-channel FET having a control gate connected to a first word line, a source applied to a second potential lower than the first potential, a drain connected to the first output node, and a threshold changed by data in a storage layer, and a second N-channel FET having a control gate connected to a second word line, a source applied to the second potential, a drain connected to the second output node, and a threshold changed by data in a storage layer. | 09-20-2012 |
20130027093 | PLL - One embodiment provides a phase-locked loop (PLL), in which a sequencer controls a loop filter such that, when a signal indicating turning-off of a power supply of the PLL is input thereto, or when a signal indicating turning-on of the power supply of the PLL is input thereto, a resistance value of a first resistance change device in the loop filter is a first resistance value, and that, after the PLL is stabilized, the resistance value of the first resistance change device is a second resistance value which is higher than the first resistance value. | 01-31-2013 |
20130028011 | MAGNETORESISTIVE DEVICE AND MAGNETIC MEMORY - A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices. | 01-31-2013 |
20130028012 | SEMICONDUCTOR INTEGRATED CIRCUIT AND PROCESSOR - In one embodiment, there is provided a semiconductor integrated circuit that includes: a first inverter; a second inverter; a first transistor, wherein one end of the first transistor is connected to a first bit line and the other end of the first transistor is connected to a first input terminal of the first inverter; a first element group including second transistors, wherein one end of the first element group is connected to a first output terminal of the first inverter and the other end of the first element group is connected to a second bit line; and a second element group including third transistors and a magnetoresistive element whose magnetic resistance is varied. The second element group is disposed between the second output terminal of the second inverter and a first terminal or disposed between the first transistor and the first terminal. | 01-31-2013 |
20130031397 | INFORMATION PROCESSING APPARATUS - One embodiment provides an information processing apparatus including a processor; memory blocks; an internal voltage generator connected to the memory blocks; an input/output circuit connected to the memory blocks; switches each installed corresponding to the internal voltage generator, the input/output circuit, and the memory blocks, and configured to switch ON/OFF of the connection with a power source; a data register configured to store a data set that controls the ON/OFF of the switches; and a data management circuit configured to set the data set in the data register, wherein when a clock signal input to the processor is turned to OFF, the data management circuit generates a first type of the data set, which switches ON the switch connected to the internal voltage generator and switches OFF the switches connected to the memory blocks, and sets the first type of the data set in the data register. | 01-31-2013 |
20130055189 | METHOD FOR IMPLEMENTING CIRCUIT DESIGN FOR INTEGRATED CIRCUIT AND COMPUTER READABLE MEDIUM - In one embodiment, a method for implementing a circuit design for an integrated circuit includes: (a) obtaining a first wiring to satisfy a given operating frequency; (b) calculating a maximum bypass wiring length based on the given operating frequency and a critical path of the first wiring; (c) obtaining a second wiring by bypassing the first wiring using wires other than wires of the first wiring in a first wiring group, wherein wiring of the integrated circuit is categorized into a plurality of wiring groups, and the first wiring is included in the first wiring group of the categorized wiring groups; and (d) replacing the first wiring with the second wiring, if a difference between the second wiring and the first wiring is not larger than the maximum bypass wiring length, and not replacing the first wiring if said difference is larger than the maximum bypass wiring length. | 02-28-2013 |
20130268795 | CACHE SYSTEM AND INFORMATION-PROCESSING DEVICE - According to one embodiment, a cache system includes a tag memory includes a volatile memory device, the tag memory includes ways and storing a tag for each line, a data memory includes a nonvolatile memory device including sense amplifiers for reading data, the data memory includes ways and storing data for each line, a comparison circuit configured to compare a tag included in an address supplied from an external with a tag read from the tag memory, and a controller configured to turn off a power of a sense amplifier for a way which is not accessed based on a comparison result of the comparison circuit. | 10-10-2013 |
20130301345 | MAGNETIC RANDOM ACCESS MEMORY AND MEMORY SYSTEM - According to one embodiment, a magnetic random access memory includes a write circuit to write s-bit (s is a natural number equal to 2 or greater) write data to magnetoresistive elements, and a read circuit to read s-bit read data from the magnetoresistive elements. The control circuit is configured to select one of first and second modes based on a mode selection signal, read the read data by the read circuit and write one of the write data and inversion data of the write data to the magnetoresistive elements by the write circuit based on the read data and the write data if free space of the buffer memory is equal to a fixed value or more when the second mode is selected. | 11-14-2013 |
20130322161 | MAGNETIC RANDOM ACCESS MEMORY - According to one embodiment, a magnetic random access memory includes a write circuit to write complementary data to first and second magnetoresistive elements, and a read circuit to read the complementary data from the first and second magnetoresistive elements. The control circuit is configured to change the first and second bit lines to a floating state after setting the first and second bit lines to a first potential, and change a potential of the first bit line in the floating state to a first value in accordance with a resistance value of the first magnetoresistive element and a potential of the second bit line in the floating state to a second value in accordance with a resistance value of the second magnetoresistive element by setting the common source line to a second potential higher than the first potential. | 12-05-2013 |
20140104920 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a processor chip, and a memory chip stacked on the processor chip with bumps and including a memory cell unit and a memory logic unit. The bumps are arranged on the memory logic unit. An address and data are transferred between the processor chip and the memory chip by use of shared bumps of the bumps. | 04-17-2014 |
20140281189 | PROCESSOR SYSTEM HAVING VARIABLE CAPACITY MEMORY - According to one embodiment, a processor system includes a variable capacity memory. The memory includes a memory cell array including basic units, each of the basic units including one cell transistor and one variable resistance element, a mode selector switching between first and second modes, a read/write of one bit executed in 2 | 09-18-2014 |
20140293685 | MAGNETIC MEMORY - A magnetic memory according to an embodiment includes: a plurality of memory cells, each memory cell including a first MTJ element and a first selection unit; a pair of a first and second bit lines provided to each column of the memory cells; a word line provided to each row of the memory cells; an equalizer circuit provided to each column of the memory cells, and to connect between the first and second bit lines; and a control circuit that sets the first and second bit lines connected to a selected memory cell to be a first and second potentials to conduct a write operation, and after the write operation, transmits a control signal to the equalizer circuit between the first and second bit lines to activate the equalizer circuit to equalize potentials of the first bit line and the second bit line, thereby bringing into floating states. | 10-02-2014 |
20140339616 | NON-VOLATILE MEMORY, WRITING METHOD FOR THE SAME, AND READING METHOD FOR THE SAME - A non-volatile memory of an embodiment includes a plurality of memory cells, each of the memory cells including a plurality of transistors including a first to fourth transistors, a first non-volatile element, a second non-volatile element, a first node, and a second node, the first and second transistors being connected in series with the first non-volatile element, the third and fourth transistors being connected in series with the second non-volatile element, the first node being disposed between the first and second transistors, the second node being disposed between the third and fourth transistors, gates of the first and third transistors being connected to one of first wiring lines, a gate of the second transistor being connected to the second node, a gate of the fourth transistor being connected to the first node, the first transistor being connected between one of second wiring lines and the first node. | 11-20-2014 |
20140379975 | PROCESSOR - According to one embodiment, a processor includes a core controlling processing data, a cache data area storing the processing data as cache data in a nonvolatile manner, a first tag area storing a tag data of the cache data in a volatile manner, a second tag area storing the tag data in a nonvolatile manner, a tag controller controlling the tag data. The tag controller determines whether the processing data is stored in the cache data area by acquiring the tag data from one of the first and second tag areas. | 12-25-2014 |