Ming-Jhe
Ming-Jhe Hu, Tainan County TW
Patent application number | Description | Published |
---|---|---|
20100258808 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - A thin film transistor and a manufacturing method thereof are provided. A bottom gate, a gate insulating layer and an amorphous semiconductor layer are formed on a substrate. The amorphous semiconductor layer has an uneven upper surface. A laser annealing process is performed on the amorphous semiconductor layer through the uneven upper layer to transform the amorphous semiconductor layer into a polycrystalline semiconductor layer having a smaller-crystallizing-section and a greater-crystallizing-section. Another gate insulating layer, an upper gate and patterned photoresist layer are formed on the polycrystalline semiconductor layer. Patterns of the upper gate and the bottom gate are defined by the same photo-mask. A source/drain is formed in the polycrystalline semiconductor layer. An etching process with etching selectivity is performed on the upper gate and the patterned photoresist layer to make a length of the upper gate shorter than that of the bottom gate. | 10-14-2010 |
Ming-Jhe Li, Ji'An Township TW
Patent application number | Description | Published |
---|---|---|
20140107351 | Fullerene-Containing Hemicarceplexes and a Method of Purifying Fullerenes by Using the Same - Fullerene⊙CTV complexes, comprising fullerene⊙CTV hemicarceplexes, formed by various cyclotriveratrylene (CTV)-based molecular cages and various fullerene guests are disclosed. A method of direct isolating at least a fullerene from fullerene mixtures by using the above fullerene CTV hemicarceplexes but without using crystallization or HPLC is also disclosed. | 04-17-2014 |
Ming-Jhe Li, Hualien County TW
Patent application number | Description | Published |
---|---|---|
20140187800 | FULLERENE-CONTAINING HEMICARCEPLEXES AND A METHOD OF PURIFYING FULLERENES BY USING THE SAME - Fullerene⊙CTV complexes, comprising fullerene⊙CTV hemicarceplexes, formed by various cyclotriveratrylene (CTV)-based molecular cages and various fullerene guests are disclosed. A method of direct isolating at least a fullerene from fullerene mixtures by using the above fullerene CTV hemicarceplexes but without using crystallization or HPLC is also disclosed. | 07-03-2014 |
Ming-Jhe Lin, Taipei TW
Patent application number | Description | Published |
---|---|---|
20110018113 | Method for packaging micromachined devices - A method for packaging micromachined devices fabricated by MEMS and semiconductor process is disclosed in this invention. The method employed etching technique to etch a trench surrounding the micromachined components on each chip of the first wafer down to the bottom interconnection metal layer. The said trench can accommodate the solder of flip-chip packaging. On each chip of the second wafer, or called as the second chip, a surrounding copper pillar wall corresponding to the trench on the first chip is deposited. By wafer-level packaging, the trench on the first chip is aligned to the pillar wall, and then bonded together with elevated temperature. The face-to-face chamber formed between two chips can allow the movement of the micromachined structures. Further, the signal or power connections between two chips can be established by providing several discrete pillar bumps. | 01-27-2011 |
20110115035 | General strength and sensitivity enhancement method for micromachined device - This invention disclosed a method to strengthen structure and enhance sensitivity for CMOS-MEMS micro-machined devices which include micro-motion sensor, micro-actuator and RF switch. The steps of the said method contain defining deposited region by metal and passivation layer, forming a cavity for depositing metal structure by lithography process, depositing metal structure on the top metal layer of micromachined structure by Electroless plating, polishing process and etching process. The method aims at strengthening structures and minimizing CMOS-MEMS device size. Furthermore, this method can also be applied to inertia sensors such as accelerometer or gyroscope, which can enhance sensitivity and capacitive value, and deal with curl issues for suspended CMOS-MEMS devices. | 05-19-2011 |
Ming-Jhe Wu, Yuchih Township TW
Patent application number | Description | Published |
---|---|---|
20090289435 | Composite Bicycle Frame - A composite bicycle frame includes a plurality of tubes. The tubes includes a seat tube, a main tube and chain stays. The main tube is made of metallic materials. The seat tube and the chain stays are made of resin fiber materials. | 11-26-2009 |