Chang-Liao
Kuei-Shu Chang-Liao, Hsinchu City TW
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20110018049 | Charge trapping device and method for manufacturing the same - The present invention relates to a charge trapping device and a method for manufacturing the same. The charge trapping device includes: a substrate having a first surface and an opposite second surface; a tunneling insulating layer, disposed on the first surface of the substrate; a charge trapping layer, disposed on the tunneling insulating layer and including a first dielectric layer and a second dielectric layer, in which the first dielectric layer is connected to the tunneling insulating layer, the second dielectric layer is disposed over the first dielectric layer, and a conduction band offset between the first dielectric layer and the substrate is larger than that between the second dielectric layer and the substrate; and a blocking insulating layer, disposed on the charge trapping layer and connected to the second dielectric layer. Accordingly, the charge trapping device of the present invention has excellent programming, and erasing and charge retention properties. | 01-27-2011 |
20140217492 | CHARGE-TRAP TYPE FLASH MEMORY DEVICE HAVING LOW-HIGH-LOW ENERGY BAND STRUCTURE AS TRAPPING LAYER - A charge-trap type flash memory device having a low-high-low energy band as a trapping layer embeds Al | 08-07-2014 |
Kuei-Shu Chang-Liao, Hsin-Chu TW
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20140246758 | NITROGEN-CONTAINING OXIDE FILM AND METHOD OF FORMING THE SAME - A method of forming a nitrogen-containing oxide film is disclosed. The method comprises (a) exposing a substrate to a first gas pulse having one of an oxygen-containing gas and a metal-containing gas; (b) exposing the substrate to a second gas pulse having the other of the oxygen-containing gas and the metal-containing gas to form an oxide film over the substrate; and (c) exposing the oxide film to a third gas pulse having a nitrogen-containing plasma to form a nitrogen-containing oxide film, wherein the nitrogen-containing oxide film has a nitrogen concentration between about 0.1 and about 3 atomic percent (at %). | 09-04-2014 |
Kuei-Shu Chang-Liao, Hsinchu TW
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20140311569 | SOLAR CELL WITH OMNIDIRECTIONAL ANTI-REFLECTION STRUCTURE AND METHOD FOR FABRICATING THE SAME - A solar cell with an omnidirectional anti-reflection structure comprises a solar cell substrate, a transparent electric-conduction layer formed on one surface of the solar cell substrate, a plurality of microspheres formed on the transparent electric-conduction layer, and a dielectric layer. The microspheres have a diameter of 0.1-100 μm. The dielectric layer is formed among the microspheres, and covers the surface of the transparent electric-conduction layer without the microspheres and has a thickness smaller than the diameter of the microspheres. Thus, the above-mentioned structure can enhance the absorption of the short-wavelength spectrum and increase the short-circuit current. Further, the structure with the microspheres is adaptable to the omnidirectional light absorption at various incident angles. | 10-23-2014 |